Abstract: An exhaust gas dry treatment device comprises an adsorption tower having: a box-shaped tower body; a plurality of reaction chambers have moving beds therein; a plurality of vertical partition plates which sequentially close between the end parts of the plurality of reaction chambers and between the end parts of the reaction chambers and the inner wall of the tower; an exhaust gas supply port allowing the inside of an inlet side wind box space which is formed in the tower body between the front tower wall and the reaction chamber end part to communicate with the inside of an exhaust gas supply duct; and an exhaust gas discharge port allowing the inside of an outlet side wind box space which is formed in the tower body between the rear tower wall and the reaction chamber end part to communicate with the inside of an exhaust gas discharge duct.

Abstract: A system is disclosed that facilitates creation of a web-based user interface which obtains user profile information from a database, gathers information from one or more users regarding product characteristics, correlates the user responses, performs statistical analysis of the user responses and presents the statistical analysis in a user comprehendible manner. The system also stores statistical ratings in a database correlated to a particular product or service. Ratings are provided to a user from the database based on a particular product or service, and the database can be queried to retrieve one or more user profiles that have rated a product of interest to the current use.

Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

Abstract: A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.

Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

Abstract: An exhaust-gas treating apparatus, which includes an adsorption tower for removing various harmful substances in an exhaust gas using an adsorbent, a regeneration tower for releasing adsorbed substances from the adsorbent, a first transfer passage for transferring the adsorbent from the adsorption tower to the regeneration tower, a second transfer passage for transferring the adsorbent from the regeneration tower to the adsorption tower, a lock hopper connected to one end of the regeneration tower on a higher differential pressure side of a first differential pressure between an inside of the regeneration tower and an inside of the first transfer passage and a second differential pressure between the inside of the regeneration tower and an inside of the second transfer passage to thereby secure gas-tightness, a sealing unit connected to the other end of the regeneration tower on a lower differential pressure side to thereby secure gas-tightness, and an adjusting unit for maintaining the differential pressure

Abstract: A region selecting means sequentially selects a plurality of partial regions, into which a range to be imaged of a subject is divided. A light irradiation detecting section detects light which is irradiated onto the subject from a laser light source. A signal obtaining section samples acoustic signals detected by probe elements corresponding to the selected partial region, and stores the acoustic signals in an element data memory. An image constructing section constructs a tomographic image of the subject based on the data read out from the element data memory. A synchronization correction processing section obtains the differences in the timings at which the light irradiation detecting section has detected irradiation of light, and corrects the temporal axes of the sampled data in the element data memory based on the obtained timing differences.

Abstract: A regeneration tower including a regeneration tower main body having a long trunk, and desorbed gas discharge passages through which a desorbed gas is discharged. The regeneration tower main body is configured so that a heating unit that heats an adsorbent, a separation part that separates desorbable substances as a desorbed gas from the heated adsorbent, and a cooling unit that cools the adsorbent from which the desorbable substances have been desorbed by heating are communicatively disposed in one direction and the heating unit and the cooling unit have approximately the same sectional outer diameter.

Abstract: A plasma etching apparatus capable of performing processing with excellent in-plane uniformity on an object to be processed having a large diameter is provided.

Abstract: An objective is to provide a road image including no features such as trees and tunnels hiding or covering a road surface. A mobile measuring apparatus 200 installed in a vehicle may acquire a distance and orientation point cloud 291, a camera image 292, GPS observation information 293, a gyro measurement value 294, and an odometer measurement value 295, while moving in a target area. The position and attitude localizing apparatus 300 may localize the position and attitude of the vehicle based on the GPS observation information 293, the gyro measurement value 294 and the odometer measurement value 295. The point cloud generating apparatus 400 may generate a point cloud 491 based on the camera image 292, the distance and orientation point cloud 291, and a position and attitude localized value 391.

Abstract: A solenoid actuator (1) comprises a case (9) made of a magnetic material and housing a coil (12) wound on a bobbin (11), and a pressure tube (17) made of a non-magnetic material and fitted into a hollow portion of the bobbin (11). A base (2) and a sleeve (3) made of a magnetic material are disposed in the pressure tube (17). A plunger (4) provided in an operation chamber (74, 75) formed in the base (2) and the sleeve (3) strokes according to energization of the coil (12) to axially drive a shaft (5) fixed to the plunger (4). The pressure tube (17) ensures that magnetic flux is transferred between the case (9) and the sleeve (3) while preventing pressure variation in the operation chamber (74, 75) from being transmitted to the bobbin (11), thereby achieving a high response and a pressure tightness in the solenoid actuator (1).

Abstract: A gas injection head 200 is provided above a substantial center of a substrate W. Nitrogen gas introduced from a gas feed port 291 is injected from a slit-shaped injection port 293 via an internal buffer space BF. In this way, a radial gas flow substantially isotropic in a horizontal direction while having an injection direction restricted in a vertical direction is generated above the substrate. Thus, dust D, mist M and the like around the substrate are blown off in outward directions and do not adhere to the substrate W. The gas injection head 200 can be made smaller than the diameter of the substrate W and needs to be neither retracted from the substrate surface nor rotated, wherefore an apparatus can be miniaturized.

Abstract: Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10?1 or lower.

Abstract: Disclosed is a container having a novel structure for storing contact lenses by which biofilm formation can be prevented at a high cost efficiency and from which lenses can be easily taken out. A container for storing contact lenses wherein the inner face of a dish-shaped storage chamber in a case is entirely made of a radius of curvature which is a smooth face with no irregularity and shows a continuous change, the inner face entirely comprises a smooth face with a surface roughness of 60 nm or less, and the solution capacity of the dish-shaped storage chamber is set to 3.8 mL or more.

Abstract: Electron-emissive drive units of electron-emissive elements capable of being arranged with a smaller pitch. FET and emitter array units exist in matrix element areas partitioned by a control wiring and data wiring. An exemplary unit is composed of four emitter arrays. The control wiring and data wiring are driven by first and second drive circuits, respectively. Corresponding arrays between units are connected by selection wiring and driven by a third drive circuit. The third drive circuit drives each unit of data wiring every time the drive circuit sequentially drives the four units of control wiring, and the emitter array drive circuit drives each emitter array selection wiring every time the drive circuit sequentially drives the three units of data wiring. Electrons can be emitted in units of arrays smaller than the unit.

Abstract: A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified number

Abstract: A cooling gas is discharged from a cooling gas discharge nozzle toward a local section of a front surface of a substrate on which a liquid film is formed. And then the cooling gas discharge nozzle moves from a rotational center position of the substrate toward an edge position of the substrate along a moving trajectory while the substrate is rotated. As a result, of the surface region of the front surface of the substrate, an area where the liquid film has been frozen (frozen area) expands toward the periphery edge from the center of the front surface of the substrate. It is therefore possible to form a frozen film all over the front surface of the substrate while suppressing deterioration of the durability of the substrate peripheral members since a section receiving supply of the cooling gas is limited to a local area on the front surface of the substrate.

Abstract: A part of the opening of the nozzle insertion hole located in the liquid discharging direction relative to the nozzle inserted in the nozzle insertion hole is enlarged in the liquid discharging direction. Therefore, the droplets which have migrated to the nozzle insertion hole adheres to the internal surface in the liquid discharging direction relative to the nozzle, that is, to the slanted part via the enlarged part. Moreover, the slanted part is provided slanted from the central portion of the nozzle insertion hole toward the enlarged part and separated away from the central portion of the substrate top surface. Hence, the adhering droplets flow in the liquid discharging direction along the slanted part to be discharged from the opening of the nozzle insertion hole.

Abstract: Described herein are systems and methods to utilize factual information based on stored blood glucose data to allow greater insight into the management of diabetes of a user.

Abstract: The present invention relates to A lock hopper (11) provided with air-tight hoppers (A3, B3) arranged side by side with entrance valves (A1, B1) arranged above the air-tight hoppers (A3, B3) and exit valves (A4, B4) arranged below the air-tight hoppers (A3, B3). The lock hopper (11) performs control which alternately repeats the following states: a state in which granular substances in an upper system are placed in one of the hoppers and gas is supplied into the other hopper to discharge granular substances from the inside of the other hopper to a lower system and a state in which the granular substances in the upper system are placed in the other hopper and gas is supplied to said hopper to discharge granular substances from the inside of said hopper to the lower system.