Abstract: A display device according to an exemplary embodiment of the present invention includes: a plurality of pixels including switching elements; a plurality of pairs of first and second gate lines connected to the switching elements and separated from each other, transmitting a gate-on voltage for turning on the switching elements; and a plurality of data lines connected to the switching elements, transmitting data signals, wherein each pair of first and second gate lines is disposed between two adjacent pixel rows and is connected to one of the pixel rows.

Abstract: In an array substrate and a display apparatus, a pixel part has a plurality of gate lines, a plurality of data lines, and a plurality of pixels electrically connected to the gate and data lines. A driving circuit drives the pixel part electrically connected to a first end of the gate lines. An inspection circuit is electrically connected to a second end of the gate lines, and inspects the pixel part in response to an inspection signal externally provided. Thus, positions and causes for defects of the pixel part may be accurately detected, thereby improving inspecting efficiency.

Abstract: In an array substrate and a display apparatus, a pixel part has a plurality of gate lines, a plurality of data lines, and a plurality of pixels electrically connected to the gate and data lines. A driving circuit drives the pixel part electrically connected to a first end of the gate lines. An inspection circuit is electrically connected to a second end of the gate lines, and inspects the pixel part in response to an inspection signal externally provided. Thus, positions and causes for defects of the pixel part may be accurately detected, thereby improving inspecting efficiency.

Abstract: A thin film transistor array panel is provided, which includes: a display cell array circuit including a plurality of gate lines, a plurality of data lines, a plurality of thin film transistors, and a plurality of pixel electrodes; a gate driving circuit supplying gate signals to the gate lines; and a signal line connected to the gate driving circuit and including first and second line segments separated from each other and a connection member connected to the first and second line segments through at least a contact hole exposing at least one of the first and the second line segments.

Abstract: A thin film transistor and a liquid crystal display, in which a gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.

Abstract: Disclosed is a liquid crystal display device including a first substrate, a second substrate, and a liquid crystal layer interposed there between. The first substrate is provided with gate lines and data lines thereon. The gate lines and data lines cross with each other and are insulated from each other. Pixel electrodes are stacked on the gate lines and data lines. Each pixel electrode includes first and second sub-pixel electrodes spaced apart from each other and a connection electrode, which connects the first sub-pixel electrode to the second sub-pixel electrode. The second substrate is provided with a common electrode thereon. The common electrode includes a first domain divider formed on the center of the first sub-pixel electrode and a second domain divider formed on the center of the second sub-pixel electrode.

Abstract: First, a conductive material of aluminum-based material is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode. A gate insulating layer is formed by depositing nitride silicon in the range of more than 300° C. for 5 minutes, and a semiconductor layer an ohmic contact layer are sequentially formed. Next, a conductor layer of a metal such as Cr is deposited and patterned to form a data wire include a data line intersecting the gate line, a source electrode, a drain electrode and a data pad. Then, a passivation layer is deposited and patterned to form contact holes exposing the drain electrode, the gate pad and the data pad. Next, indium zinc oxide is deposited and patterned to form a pixel electrode, a redundant gate pad and a redundant data pad respectively connected to the drain electrode, the gate pad and the data pad.

Abstract: Disclosed is a liquid crystal display device including a first substrate, a second substrate, and a liquid crystal layer interposed there between. The first substrate is provided with gate lines and data lines thereon. The gate lines and data lines cross with each other and are insulated from each other. Pixel electrodes are stacked on the gate lines and data lines. Each pixel electrode includes first and second sub-pixel electrodes spaced apart from each other and a connection electrode, which connects the first sub-pixel electrode to the second sub-pixel electrode. The second substrate is provided with a common electrode thereon. The common electrode includes a first domain divider formed on the center of the first sub-pixel electrode and a second domain divider formed on the center of the second sub-pixel electrode.

Abstract: The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.

Abstract: A gate driving circuit and a display device having the same, a pull-up unit pulls up a current gate signal by using a first clock signal during a first period of one frame. A pull-up driver coupled to the pull-up unit receives a carry signal from one of the previous stages to turn on the pull-up unit. A pull-up unit receives a gate signal from one of the next stages, discharges the current gate signal to an off voltage level, and turns off the pull-up unit. A holder holds the current gate signal at the voltage level. An inverter turns on/off the holder in response to a first clock signal. A ripple preventer has a source and a gate coupled in common to an output terminal of the pull-up unit and a drain coupled to an input terminal of the inverter, and includes a ripple preventing diode for preventing a ripple from being applied to the inverter.

Abstract: A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask.

Abstract: A display substrate includes a first metal pattern formed on a substrate and includes a data line to which a pixel voltage is applied, an insulating layer formed on the substrate on which the first metal pattern is formed, an active pattern formed on the insulating layer, a second metal pattern formed on the insulating layer and including a gate line and a storage line, the gate line crossing the data line, a scanning signal applied to the gate line, a protective layer formed on the substrate on which the second metal pattern is formed, and a pixel electrode formed on the protective layer. A method for manufacturing the display substrate, and a display apparatus including the display substrate are further provided.

Abstract: The display device includes a display panel which includes a plurality of pixels, a gate driver which sequentially applies gate-on voltages to the plurality of pixels for a first period and a data driver which generates data voltages for at least two pixels of the plurality of pixels for the first period, and supplies the data voltages to the two pixels of the plurality of pixels, respectively, wherein an application order of the data voltages applied to the at least two pixels of the plurality of pixels is reversed in two adjacent frames.

Abstract: An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern having at least one block. Grains are formed in each of the at least one block that are extended in a plurality of directions. The pixel electrode is electrically connected to the switching element. Therefore, current mobility and design margin of the switching element are improved.

Abstract: A display panel includes a plurality of gate lines, a plurality of data lines and a plurality of pixel groups. The gate lines extend in a first direction and sequentially receive gate signals, and the data lines extend in a second direction that is substantially perpendicular to the first direction and receive data signals. Each pixel group includes first, second and third vertical pixels that extend in the second direction and are sequentially arranged in the first direction. The first to third vertical pixels are arranged horizontally and are electrically connected to three consecutive gate lines to receive gate signals, and are connected to two or fewer data lines to receive the data signals.

Abstract: An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern having at least one block. Grains are formed in each of the at least one block that are extended in a plurality of directions. The pixel electrode is electrically connected to the switching element. Therefore, current mobility and design margin of the switching element are improved.

Abstract: A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another.

Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.

Abstract: A wire for a liquid crystal display has a dual-layered structure comprising a first layer made of molybdenum or molybdenum alloy, and a second layer made of molybdenum nitride or molybdenum alloy nitride. To manufacture the wire, a layer made of either a molybdenum or a molybdenum alloy, and another layer one of either a molybdenum nitride or molybdenum alloy nitride by using reactive sputtering method are deposited in sequence, and then patterned simultaneously. The target for reactive sputtering is made of either molybdenum or molybdenum alloy, and the molybdenum alloy comprises one selected from the group consisting of tungsten, chromium, zirconium, and nickel of the content ratio of 0.1 to less than 20 atm % of. The reactive gas mixture for reactive sputtering includes an argon gas and inflow amount of the nitrogen gas is at least 50% of argon gas, to minimize the etch rate of the molybdenum nitride layer or the molybdenum alloy nitride layer for ITO etchant.

Abstract: A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector; and an absorber for absorbing the laser beam reflected by the reflector.