Abstract: In an array substrate and a display apparatus, a gate line receives a gate pulse during a present 1H period and a data line receives a pixel voltage having a polarity inverted at every frame. When a thin film transistor is turned on in response to the gate pulse during the present 1H period, a pixel electrode receives the pixel voltage through the thin film transistor during the present 1H period.

Abstract: A display apparatus has a pixel including a main pixel connected to a main gate line and a data line, and a sub-pixel connected to a sub-gate line and the data line. A main gate driver outputs a main gate pulse to the main gate line during a time period 1H. A sub-gate driver receives the main gate pulse and outputs a sub-gate pulse to the sub-gate line during a first portion of time period 1H. The data driver applies a sub-pixel voltage to the data line during the first portion of time period 1H and applies the main pixel voltage to the data line during a second portion of time period 1H.

Abstract: The present invention relates to a module and method for detecting a defect of a thin film transistor (TFT) substrate, which can detect disconnection of a gate line of the TFT substrate having gate drivers provided with a dual structure in which the gate drivers are provided at both sides of the gate lines. There is provided a module and method for detecting a defect of a TFT substrate, wherein gate lines are separated into two portions by cutting a central region of the gate lines, gate power is supplied to the gate lines of which central portions are cut through gate drivers provided at both sides of the gate lines, and a signal of a negative voltage level is supplied to data lines, so that disconnection of the gate lines can be detected.

Abstract: A mask for crystallization of amorphous silicon to polysilicon is provided. The mask includes a plurality of slit patterns for defining regions to be illuminated. The plurality of slit patterns are formed along a longitudinal first direction and the mask moves along a longitudinal second direction. The first longitudinal direction is substantially perpendicular to the second longitudinal direction. Each of the split patterns is deviated apart by substantially a same distance from another. Thus, the polysilicon using the mask are grown to be isotropic with respect to the horizontal and vertical directions.

Abstract: Disclosed is a liquid crystal display device including a first substrate, a second substrate, and a liquid crystal layer interposed there between. The first substrate is provided with gate lines and data lines thereon. The gate lines and data lines cross with each other and are insulated from each other. Pixel electrodes are stacked on the gate lines and data lines. Each pixel electrode includes first and second sub-pixel electrodes spaced apart from each other and a connection electrode, which connects the first sub-pixel electrode to the second sub-pixel electrode. The second substrate is provided with a common electrode thereon. The common electrode includes a first domain divider formed on the center of the first sub-pixel electrode and a second domain divider formed on the center of the second sub-pixel electrode.

Abstract: A gate driver comprises a shift register that has a plurality of stages connected together and outputs a gate signal comprising a first pulse and a second pulse to a gate line. A stage includes a holding part, a pre-charging part, a pull-up part, and a pull-down part. The holding part discharges an output terminal to an off-voltage in response to a first clock signal. The pre-charging part turns off the holding part and outputs the first clock signal as the first pulse to the output terminal in response to an output signal of a previous stage. The pull-up part outputs a second clock signal as the second pulse to the output terminal in response to the output signal of the previous stage. The pull-down part discharges the first output terminal to the off-voltage in response to an output signal of a next stage.

Abstract: First, a conductive material of aluminum-based material is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode. A gate insulating layer is formed by depositing nitride silicon in the range of more than 300° C. for 5 minutes, and a semiconductor layer an ohmic contact layer are sequentially formed. Next, a conductor layer of a metal such as Cr is deposited and patterned to form a data wire include a data line intersecting the gate line, a source electrode, a drain electrode and a data pad. Then, a passivation layer is deposited and patterned to form contact holes exposing the drain electrode, the gate pad and the data pad. Next, indium zinc oxide is deposited and patterned to form a pixel electrode, a redundant gate pad and a redundant data pad respectively connected to the drain electrode, the gate pad and the data pad.

Abstract: The present invention provides a liquid crystal display (“LCD”), a method of manufacturing the same, and a method of repairing the same capable of obtaining a wide viewing angle and improving a success ratio of repair. The LCD includes a gate line, a first data line intersecting the gate line, a thin film transistor (“TFT”) connected with the gate line and the first data line, a pixel electrode connected with the TFT, a first conductive pattern partially overlapping with a first end of the pixel electrode, a second conductive pattern partially overlapping with a second end of the pixel electrode, and a storage capacitor, wherein at least one of the first conductive pattern and the second conductive pattern partially overlaps with the first data line adjacent to the first end of the pixel electrode and a second data line adjacent to the second end of the pixel electrode, respectively.

Abstract: A gate driving circuit includes stages connected in series. In a stage, a pull-up part pulls up a present gate signal to a level of a first clock signal, and a pull-down part receives a next gate signal from a next stage to discharge the present gate signal to an off-voltage. A pull-up driving part turns on or turns off the pull-up part and the carry part. A holding part holds the present gate signal at the off-voltage and a present inverter turns on or turns off the holding part in response to the first clock signal. A ripple preventing capacitor is connected between a present node and an output terminal of a previous stage's inverter to prevent a ripple at the present Q-node in response to an output signal from the previous inverter.

Abstract: A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector, and an absorber for absorbing the laser beam reflected by the reflector.

Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.

Abstract: First, a conductive material of aluminum-based material is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode. A gate insulating layer is formed by depositing nitride silicon in the range of more than 300° C. for 5 minutes, and a semiconductor layer and an ohmic contact layer are sequentially formed. Next, a conductor layer of a metal such as Cr is deposited and patterned to form a data wire include a data line intersecting the gate line, a source electrode, a drain electrode and a data pad. Then, a passivation layer is deposited and patterned to form contact holes exposing the drain electrode, the gate pad and the data pad. Next, indium zinc oxide is deposited and patterned to form a pixel electrode, a redundant gate pad and a redundant data pad respectively connected to the drain electrode, the gate pad and the data pad.

Abstract: A liquid crystal display device comprises at least two insulating layers formed on a first conductive layer, a second conductive layer formed between the at least two insulating layers, a first contact hole penetrating an upper insulating layer of the at least two insulating layers on the second conductive layer, a second contact hole penetrating the at least two insulating layers and exposing a portion of the first conductive layer, and a contact part comprising a bridge electrode formed of a third conductive layer for connecting the first and second conductive layers through the first and second contact holes. The second contact hole comprises an internal hole penetrating the at least two insulating layers and an external hole surrounding the internal hole forming in the upper insulating layers.

Abstract: A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while baring the same width, a third slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, and a fourth slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width. The slit patterns arranged at the first to fourth slit regions are sequentially enlarged in width in the horizontal direction in multiple proportion to the width d of the slit pattern at the first slit region. The centers of the slit patterns arranged at the first to fourth slit regions in the horizontal direction are placed at the same line.

Abstract: A manufacturing method of a thin film transistor. An amorphous silicon thin film is formed on an insulating substrate, and is crystallized by a lateral solidification process with illumination of laser beams into the amorphous silicon thin film to form a polysilicon thin film. Next, protrusion portions protruding from the surface of the polysilicon thin film are removed by plasma dry-etching using a gas mixture including Cl2, SF6 and Ar at the ratio of 3:1:2 to smooth the surface of the polysilicon thin film, and the semiconductor layer is formed by patterning the polysilicon thin film. A gate insulating film covering the semiconductor layer is formed and a gate electrode is formed on the gate insulating film opposite the semiconductor layer.

Abstract: A crystallization mask for laser illumination for converting amorphous silicon into polysilicon is provided, which includes: a plurality of transmissive areas having a plurality of first slits for adjusting energy of the laser illumination passing through the mask; and an opaque area.

Abstract: A wire for a liquid crystal display has a dual-layered structure comprising a first layer made of molybdenum or molybdenum alloy, and a second layer made of molybdenum nitride or molybdenum alloy nitride. To manufacture the wire, a layer made of either a molybdenum or a molybdenum alloy, and another layer one of either a molybdenum nitride or molybdenum alloy nitride by using reactive sputtering method are deposited in sequence, and then patterned simultaneously. The target for reactive sputtering is made of either molybdenum or molybdenum alloy, and the molybdenum alloy comprises one selected from the group consisting of tungsten, chromium, zirconium, and nickel of the content ratio of 0.1 to less than 20 atm % of. The reactive gas mixture for reactive sputtering includes an argon gas and inflow amount of the nitrogen gas is at least 50% of argon gas, to minimize the etch rate of the molybdenum nitride layer or the molybdenum alloy nitride layer for ITO etchant.

Abstract: The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs uniform without increasing the size of the driving circuit. A thin film transistor according to the present invention includes a semiconductor pattern a thin film of poly-crystalline silicon containing grown grains on the insulating substrate. The semiconductor pattern includes a channel region and source and drain regions opposite with respect to the channel region. A gate insulating layer covers the semiconductor pattern. On the gate insulating layer, a gate electrode including at least one portion extending in a direction crossing the growing direction of the grains and overlapping the channel region is formed.

Abstract: A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a third slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, and a fourth slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width. The slit patterns arranged at the first to fourth slit regions are sequentially enlarged in width in the horizontal direction in multiple proportion to the width d of the slit pattern at the first slit region. The centers of the slit patterns arranged at the first to fourth slit regions in the horizontal direction are placed at the same line.

Abstract: An array substrate includes a base substrate, a plurality of gate lines, a plurality of data lines and a pixel matrix. The plurality of gate lines and the plurality of data lines define pixel areas. The pixel matrix is formed on each pixel area, and includes a plurality of pixel columns and pixel rows. Each pixel column has a first pixel group and a second pixel group. The first pixel group is electrically connected to a first gate line adjacent to the pixel column. The second pixel group is electrically connected to a second gate line adjacent to the pixel column. Each pixel row is electrically connected to one data line adjacent to the pixel column.