Abstract: Disclosed herein are silicon-on-insulator (SOI) switches and associated control circuits having level shifters configured to provide increased voltages (positive and/or negative) to the switches. The disclosed level shifters can be configured to provide increased voltages and can be used with high-linearity switches and/or can improve the linearity of switches. The improved switch performance can improve front end module performance for applications such as carrier aggregation (CA) and multiple input multiple output (MIMO) as well as with protocols such as Long-Term Evolution Advanced (or LTE-A).

Abstract: The fabrication of field-effect transistor (FET) devices is described herein where the FET devices include one or more body contacts implemented between source, gate, drain (S/G/D) assemblies to improve the influence of a voltage applied at the body contact on the S/G/D assemblies. The FET devices can include source fingers and drain fingers interleaved with gate fingers. The source and drain fingers of a first S/G/D assembly can be electrically connected to the source and drain fingers of a second S/G/D assembly.

Abstract: Disclosed herein are switching or other active FET configurations that implement a main-auxiliary branch design. Such designs include a circuit assembly for performing a switching function that includes a branch including a main path in parallel with an auxiliary path. The circuit assembly also includes a gate bias network connected to the main path and to the auxiliary path, the main path and the auxiliary path each having different structures that are configured to improve linearity of the switching function.

Abstract: A linearization circuit reduces intermodulation distortion in an amplifier that includes a first stage and a second stage. The linearization circuit receives a first signal that includes a first frequency and a second frequency and generates a difference signal having a frequency approximately equal to the difference of the first frequency and the second frequency, generates an envelope signal based at least in part on a power level of the first signal, and adjusts a magnitude of the difference signal based on the envelope signal. When the amplifier receives the first signal at an input terminal, the first stage receives the adjusted signal, and the second stage does not receive the adjusted signal, intermodulation between the adjusted signal and the first signal cancels at least a portion of the intermodulation between the first frequency and the second frequency from the output of the amplifier.

Abstract: A linearization circuit that reduces intermodulation distortion in an amplifier output receives a first signal that includes a first frequency and a second frequency and generates a difference signal having a frequency approximately equal to the difference of the first frequency and the second frequency. The linearization circuit generates an envelope signal based at least in part on a power level of the first signal and adjusts a magnitude of the difference signal based on the envelope signal. When the amplifier receives the first signal at an input terminal and the adjusted signal at a second terminal, intermodulation between the adjusted signal and the first signal cancels at least a portion of the intermodulation products that result from the intermodulation of the first frequency and the second frequency.

Abstract: Apparatus and methods for biasing of power amplifiers are disclosed. In one embodiment, a mobile device includes a transceiver that generates a radio frequency signal and a power amplifier enable signal, a power amplifier that provides amplification to the radio frequency signal and that is biased by a bias signal, and a bias circuit that receives the power amplifier enable signal and generates the bias signal. The bias circuit includes a gain correction circuit that generates a correction current in response to activation of the power amplifier enable signal, and a primary biasing circuit that generates the bias signal based on the correction current and the power amplifier enable signal.

Abstract: Envelope tracking can be employed to reduce power consumption of a power amplifier, but envelope tracking can introduce nonlinearities to a power amplifier. These nonlinearities can manifest themselves as noise at the output of the power amplifier. Embodiments described herein provide techniques for characterizing a parameter indicative of power amplifier noise when envelope tracking is employed. Measurement of this parameter can permit power amplifier designers to decide whether to forgo envelope tracking if a power amplifier is too susceptible to such noise, redesign the power amplifier to improve compatibility with envelope tracking, or to employ distortion compensation circuitry to reduce the noise output by the power amplifier. Counterintuitively, this distortion compensation circuitry may involve increasing the power, such as the envelope tracking power supply. However, increasing the power may be a desirable trade-off for increased linearity.

Abstract: Disclosed herein are switching or other active FET configurations that implement a segmented main-auxiliary branch design. Such designs include a circuit assembly for performing a switching function that includes a branch including a plurality of main-auxiliary pairs coupled in series, wherein each main-auxiliary pair includes a main field-effect transistor (FET) in parallel with an auxiliary FET. The circuit assembly also includes a gate bias network connected to the main FETs and configured to bias the main FETs in a strong inversion region. The circuit assembly also includes an auxiliary bias network connected to the auxiliary FETs and configured to bias the auxiliary FETs in a weak inversion region.

Abstract: Disclosed herein are switching or other active FET configurations that implement a main-auxiliary branch design. Such designs include a circuit assembly for performing a switching function that includes a branch including a main path in series with an auxiliary path. The circuit assembly also includes a first gate bias network connected to the main path. The circuit assembly also includes a second gate bias network connected to the auxiliary path, the second gate bias network configured to improve linearity of the switching function.

Abstract: Disclosed herein are circuits, devices and methods that address challenges associated with power amplifier systems. A power amplifier system includes two or more fast error amplifiers coupled to corresponding power amplifiers. The fast error amplifiers are configured to generate envelope tracking signals based on a signal envelope, the envelope tracking signals modifying a DC-DC regulated voltage from a DC-DC converter to more efficiently operate the power amplifiers. By splitting the envelope tracking between two or more fast error amplifiers and amplification between corresponding two or more power amplifiers, the power, frequency or bandwidth, linearity, signal-to-noise ratio, efficiency, or the like of the power amplifier system can be improved. Wireless communications configurations with such power amplifier systems can provide uplink carrier aggregation and/or cellular signals based on standards and protocols that require increased bandwidth and/or power.

Abstract: Disclosed herein are systems and methods for reducing intermodulation distortion (IMD) in switches using distorter circuits and voltage buffers. A switch circuit can include a switch arm with a stack of field-effect transistors (FETs), a distorter arm that is configured to act as a compensation circuit to compensate for non-linearities in the switch arm, and a voltage buffer that is configured to protect the distorter arm from large voltage swings when transitioning between ON and OFF states. The gate width of the distorter arm can be orders of magnitude smaller than the gate widths of the switch FETs. The gate width of the voltage buffer FETs can be larger than the distorter arm and smaller than the switch arm. The distorter arm is configured to compensate for the non-linearity effect generated by the switch arm.

Abstract: Disclosed herein are circuits, devices and methods that address challenges associated with power amplifier systems. A power amplifier system includes two or more fast error amplifiers coupled to corresponding power amplifiers. The fast error amplifiers are configured to generate envelope tracking signals based on a signal envelope, the envelope tracking signals modifying a DC-DC regulated voltage from a DC-DC converter to more efficiently operate the power amplifiers. By splitting the envelope tracking between two or more fast error amplifiers and amplification between corresponding two or more power amplifiers, the power, frequency or bandwidth, linearity, signal-to-noise ratio, efficiency, or the like of the power amplifier system can be improved. Wireless communications configurations with such power amplifier systems can provide uplink carrier aggregation and/or cellular signals based on standards and protocols that require increased bandwidth and/or power.

Abstract: Apparatus and methods for multi-antenna communications are provided. In certain embodiments, a communication system includes an antenna array including a plurality of antenna elements, and a plurality of RF circuit channels each coupled to a corresponding one of the antenna elements. The plurality of RF circuit channels generate two or more analog baseband signals in response to the antenna array receiving a radio wave. The communication system further includes a controllable amplification and combining circuit that generates two or more amplified analog baseband signals based on amplifying each of the two or more analog baseband signals with a separately controllable gain, and that combines the two or more amplified analog baseband signals to generate a combined analog baseband signal.

Abstract: Disclosed herein are switching or other active FET configurations that implement a main-auxiliary branch design. Such designs include a circuit assembly for performing a switching function that includes a branch including a main path in parallel with an auxiliary path. The circuit assembly also includes a first gate bias network connected to the main path. The circuit assembly also includes a second gate bias network connected to the auxiliary path, the second gate bias network configured to improve linearity of the switching function.

Abstract: A power amplifier can include a carrier amplifier having first and second differential amplification cells with outputs coupled by a primary loop of a carrier transformer, and a peaking amplifier having first and second differential amplification cells with outputs coupled by a primary loop of a peaking transformer. The power amplifier can further include a combiner having a quarter-wave circuit implemented between the secondary loop of the carrier transformer and a secondary loop of the peaking transformer. The quarter-wave circuit can be configured to provide a characteristic impedance, such that the carrier and peaking amplifiers are presented with an impedance that is approximately the same as the characteristic impedance when both of the carrier and peaking amplifiers are turned on, and the carrier amplifier is presented with an impedance that is approximately twice the characteristic impedance when the carrier amplifier is turned on and the peaking amplifier is turned off.

Abstract: Embodiments described herein relate to an envelope tracking system that uses a single-bit digital signal to encode an analog envelope tracking control signal, or envelope tracking signal for brevity. In certain embodiments, the envelope tracking system can estimate or measure the amplitude of the baseband signal. The envelope tracking system can further estimate the amplitude of the envelope of the RF signal. The system can convert the amplitude of the envelope signal to a single-bit digital signal, typically at a higher, oversample rate. The single-bit digital signal can be transmitted in, for example, a low-voltage differential signaling (LVDS) format, from a transceiver to an envelope tracker. An analog-to-digital converter (ADC or A/D) can convert the single-bit digital signal back to an analog envelope signal. Moreover, a driver can increase the power of the A/D output envelope signal to produce an envelope-tracking supply voltage for a power amplifier.

Abstract: Disclosed herein are switching or other active FET configurations that implement a main-auxiliary branch design. Such designs include a circuit assembly for performing a switching function that includes a branch including a main path in parallel with an auxiliary path, both the main path and the auxiliary path having a plurality of field-effect transistors. The circuit assembly also includes a first gate bias network connected to the main path. The circuit assembly also includes a second gate bias network connected to a first subset of the plurality of FETs of the auxiliary path. The circuit assembly also includes a third gate bias network connected to a second subset of the plurality of FETs of the auxiliary path so that the third gate bias network switches on the auxiliary path when the main path is on for nonlinear cancellation, and switches off the auxiliary path when the main path is off to enable the branch to withstand maximum voltage swings.

Abstract: Disclosed herein are amplification systems that are dynamically biased based on a signal indicative of differential envelope of an input radio-frequency (RF) signal being amplified. The amplification systems include a cascode amplifier configured to amplify the RF signal to generate an output RF signal when one of the transistors of the cascode amplifier is biased by a combination of the input RF signal and a biasing signal while the other transistor of the cascode amplifier is biased by a processed differential envelope signal. The cascode amplifier also receives a combination of a processed differential envelope signal and a supply voltage to generate the output RF signal. The biasing signal can improve or enhance the linearity of amplification systems.

Abstract: Aspects of this disclosure relate to a switching circuit with enhanced linearity. The switching circuit can include a switch and an envelope generator. The switch can receive an input signal, provide an output signal, and receive an envelope signal corresponding to an envelope of the input signal. The envelope generator can generate the envelope signal so as to cause intermodulation distortion in the output signal to be reduced to cause linearity of the switch to be improved.

Abstract: Field-effect transistor (FET) devices are described herein that include one or more body contacts implemented near source, gate, drain (S/G/D) assemblies to improve the influence of a voltage applied at the body contact on the S/G/D assemblies. For example, body contacts can be implemented between S/G/D assemblies rather than on the ends of such assemblies. This can advantageously improve body contact influence on the S/G/D assemblies while maintaining a targeted size for the FET device.