Abstract: A method is described comprising conducting a first current through a switching transistor. The method also comprises conducting a second current through a pair of transistors whose conductive channels are coupled in series with respect to each other and are together coupled in parallel across the switching transistor's conductive channel. The second current is less than and proportional to the first current.

Abstract: An apparatus includes a magnetic core, a ground node, and one or more vias to provide a connection between the magnetic core and the ground potential. The magnetic core includes a first magnetic layer and a second magnetic layer. In addition, the apparatus may include a conductive pattern. The conductive pattern may be at a third layer between the first and second magnetic layers. The apparatus may be included in inductors, transformers, transmission lines, and other components using ferromagnetic cores or shields. Such components may be integrated on a chip or die.

Abstract: A method is described comprising conducting a first current through a switching transistor. The method also comprises conducting a second current through a pair of transistors whose conductive channels are coupled in series with respect to each other and are together coupled in parallel across the switching transistor's conductive channel. The second current is less than and proportional to the first current.

Abstract: Methods of manufacture of integrated circuit inductors having slotted magnetic material will be described. The methods may employ electro- or electroless plating techniques to form a layer or layers of magnetic material within the slotted magnetic material structure, and in particular those magnetic material layers adjacent to insulator layers.

Abstract: A comparator to provide an output voltage indicative of comparing an input voltage with a reference voltage, where the comparator has an asymmetric frequency response. With an asymmetric frequency response, the bandwidth of the input voltage may be greater than the bandwidth of the reference voltage. A comparator includes a differential pair of transistors coupled to a current mirror and biased by a current source, where in one embodiment, a capacitor shunts the sources of the differential pair. In a second embodiment, a capacitor couples the input voltage port to the gates of the current mirror transistors. In a third embodiment, the comparator utilizes both capacitors of the first and second embodiments.

Abstract: Some embodiments include a die having a transformer. The transformer includes windings formed from a set of lines, such that no two lines belonging to any one winding are nearest neighbors. The lines are formed within one layer on the die. Other embodiments are described.

Abstract: An apparatus includes a magnetic core, a ground node, and one or more vias to provide a connection between the magnetic core and the ground potential. The magnetic core includes a first magnetic layer and a second magnetic layer. In addition, the apparatus may include a conductive pattern. The conductive pattern may be at a third layer between the first and second magnetic layers. The apparatus may be included in inductors, transformers, transmission lines, and other components using ferromagnetic cores or shields. Such components may be integrated on a chip or die.

Abstract: Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a first layer of magnetic material and at least one via structure disposed in a first dielectric layer, forming a second dielectric layer disposed on the first magnetic layer, forming at least one conductive structure disposed in the second dielectric layer, forming a third layer of dielectric material disposed on the conductive structure, forming a second layer of magnetic material disposed in the third layer of dielectric material and in the second layer of dielectric material, wherein the first and second layers of the magnetic material are coupled to one another.

Abstract: Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a first layer of magnetic material and at least one via structure disposed in a first dielectric layer, forming a second dielectric layer disposed on the first magnetic layer, forming at least one conductive structure disposed in the second dielectric layer, forming a third layer of dielectric material disposed on the conductive structure, forming a second layer of magnetic material disposed in the third layer of dielectric material and in the second layer of dielectric material, wherein the first and second layers of the magnetic material are coupled to one another.

Abstract: A transformer integrated on a die, the transformer comprising a set of conductive lines formed on the die within one layer and interconnected among each other so that no two lines belonging to any one winding are nearest neighbors. The set of conductive lines is surrounded by a magnetic material, which may be amorphous CoZrTa, CoFeHfO, CoAlO, FeSiO, CoFeAlO, CoNbTa, CoZr, and other amorphous cobalt alloys. The transformer may be operated at frequencies higher than 10 MHz and as high as 1 GHz, with relatively low resistance and relatively high magnetic coupling between the windings.

Abstract: An apparatus includes a magnetic core, a ground node, and one or more vias to provide a connection between the magnetic core and the ground potential. The magnetic core includes a first magnetic layer and a second magnetic layer. In addition, the apparatus may include a conductive pattern. The conductive pattern may be at a third layer between the first and second magnetic layers. The apparatus may be included in inductors, transformers, transmission lines, and other components using ferromagnetic cores or shields. Such components may be integrated on a chip or die.

Abstract: An integrated circuit (IC) package is disclosed. The IC package includes a first die; and a second die bonded to the CPU die in a three dimensional packaging layout.

Abstract: An embodiment is an inductor that may include a laminated material structure to decrease eddy currents therein that may limit the operation of the inductor at high frequency. An embodiment may employ electroless plating techniques to form a layer or layers of magnetic material within the laminated material structure, and in particular those magnetic layers adjacent to insulator layers.

Abstract: An inductor and multiple inductors embedded in a substrate (e.g., IC package substrate, board substrate, and/or other substrate) is provided herein.

Abstract: A central processing unit (CPU) is disclosed. The CPU includes a CPU die; and a voltage regulator die bonded to the CPU die in a three dimensional packaging layout.

Abstract: An embodiment is a magnetic via. More specifically, an embodiment is a magnetic via that increases the inductance of, for example, an integrated inductor or transformer while mitigating eddy currents therein that may limit the operation of the inductor or transformer at high frequency.

Abstract: A central processing unit (CPU) is disclosed. The CPU includes a CPU die; and a voltage regulator die bonded to the CPU die in a three dimensional packaging layout.

Abstract: An integrated circuit (IC) package is disclosed. The IC package includes a first die; and a second die bonded to the CPU die in a three dimensional packaging layout.

Abstract: An inductor and multiple inductors embedded in a substrate (e.g., IC package substrate, board substrate, and/or other substrate) is provided herein.

Abstract: An apparatus includes a magnetic core, a ground node, and one or more vias to provide a connection between the magnetic core and the ground potential. The magnetic core includes a first magnetic layer and a second magnetic layer. In addition, the apparatus may include a conductive pattern. The conductive pattern may be at a third layer between the first and second magnetic layers. The apparatus may be included in inductors, transformers, transmission lines, and other components using ferromagnetic cores or shields. Such components may be integrated on a chip or die.