Abstract: An LED tube lamp comprises a lamp tube, a first circuit board disposed in the lamp tube having a plurality of light sources mounted thereon, and two lamp caps respectively disposed at both ends of the lamp tube and having a power supply disposed in the lamp caps. The power supply has a second circuit board with a first surface and a second surface opposite and parallel to each other. The lamp cap comprises a side wall, an end wall, and a slot with a first rib. There is a coupling structure protruded on the first rib with respect to the first surface of the second circuit board.

Abstract: Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a multi-metal complex including an extreme ultraviolet (EUV) absorption element and a bridging element. By way of example, the EUV absorption element includes a first metal type and the bridging element includes a second metal type. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.

Abstract: An LED tube lamp, comprising: a lamp tube; a first circuit board, disposed in the lamp tube, having a plurality of light sources mounted thereon; two lamp caps disposed at respective ends of the lamp tube; a power supply substantially disposed in one or both of the two lamp caps, the power supply having a second circuit board; and a connection structure having a third circuit board, the third circuit board for connecting the first circuit board to the second circuit board thereby connecting the light sources to the power supply.

Abstract: A single-poly non-volatile memory unit includes: a semiconductor substrate having a first conductivity type; first, second and third OD regions disposed on the semiconductor substrate and separated from each other by an isolation region, wherein the first OD region and the second OD region are formed in a first ion well, and the first ion well has a second conductivity type; a first memory cell disposed on the first OD region, a second memory cell disposed on the second OD region. The first memory cell and the second memory cell exhibit an asymmetric memory cell layout structure with respect to an axis. An erase gate is disposed in the third OD region.

Abstract: The sensorless position measurement system for the permanent magnet machine utilizes the preprocessing circuit to couple with the inverter for obtaining the line-to-line PWM signal supplied to the permanent magnet machine. The preprocessing circuit converts negative PWM pulses of the line-to-line PWM signal into positive PWM pulses for obtaining the converted line-to-line PWM signal. The function of the preprocessing is achieved by the differential circuit and the polarity correction circuit. The converted line-to-line PWM signal is a digital signal and captured by the capture modulator. The preprocessing circuit is substituted for the analog to digital converter. The microcontroller determines the angular position of the permanent magnet machine based on the converted line-to-line PWM signal.

Abstract: Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a plurality of contact pads over a substrate, and forming an insulating material over the plurality of contact pads and the substrate. The insulating material is patterned to form an opening over each of the plurality of contact pads, and the plurality of contact pads is cleaned. The method includes forming an under-ball metallization (UBM) structure over the plurality of contact pads and portions of the insulating material. Cleaning the plurality of contact pads recesses a top surface of each of the plurality of contact pads.

Abstract: A light-emitting device, includes a substrate structure, including a base portion having a surface and a plurality of protrusions formed on the base portion; a buffer layer covering the plurality of protrusions and the surface; and III-V compound semiconductor layers formed on the buffer layer; wherein one of the plurality of protrusions has a height not greater than 1.5 ?m; wherein the light-emitting device has a full width at half maximum (FWHM) of smaller than 250 arcsec in accordance with a (102) XRD rocking curve.

Abstract: An erasable programmable non-volatile memory includes a memory array and a sensing circuit. The memory array includes a general memory cell and a reference memory cell, which are connected with a word line. The sensing circuit includes a current comparator. The read current in the program state of the general memory cell is higher than the read current in the program state of the reference memory cell. The erase efficiency of the general memory cell is higher than the erase efficiency of the reference memory cell. When a read action is performed, the general memory cell generates a read current to the current comparator, and the reference memory cell generates a reference current to the current comparator. According to the reference current and the read current, the current comparator generates an output data signal to indicate a storage state of the general memory cell.

Abstract: A display device includes a first substrate, first signal lines, second signal lines, active elements, pixel electrodes, a second substrate, a black matrix, a first spacer, and a second spacer. The active elements are electrically connected with the first signal lines and the second signal lines. The black matrix includes first portions and second portions. The first portions overlap the first signal lines. The second portions overlap the second signal lines. The first spacer overlaps a source and a drain of one of the active elements. The second spacer overlaps a source and a drain of another one of the active elements. The shortest distance between the center of the first spacer and the center line of the closest one of the first portions is different from the shortest distance between the center of the second spacer and the center line of the closest one of the first portions.

Abstract: The present invention proposes an electrode thin film and a method for manufacturing the electrode thin film. The method includes: determining a height between a first roller and a substrate and a coating speed for the first roller coating a first metal nanowire suspension liquid onto the substrate based on a suspension property of the first metal nanowire suspension liquid; coating, by using the first roller, the first metal nanowire suspension liquid onto the substrate with the coating speed to form a wetting film on the substrate; and controlling a first temperature of the substrate heating the wetting film based on the suspension property of the first metal nanowire suspension liquid to dry the wetting film as the electrode thin film. The first temperature makes a dewetting speed of the wetting film higher than a drying speed of the wetting film.

Abstract: A computer system and computer-implemented techniques for determining crop harvest times during a growing season based upon hybrid seed properties, weather conditions, and geo-location of planted fields is provided. In an embodiment, determining crop harvest times for corn fields may be accomplished using a server computer system that receives over a digital communication network, electronic digital data representing hybrid seed properties, including seed type and relative maturity, and weather data for the specific geo-location of the agricultural field. Weather data includes temperature, humidity, and dew point for a specified period of days. Using digitally programmed equilibrium moisture content logic within the computer system to create and store, in computer memory, an equilibrium moisture content time series for the specific geo-location that is based upon weather data.

Abstract: A method includes capturing a raw image from a semiconductor wafer, assigning a measurement box in the raw image, arranging a pair of indicators in the measurement box according to graphic data system (GDS) information of the semiconductor wafer, measuring a distance between the indicators, and performing a manufacturing activity based on the measured distance.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack has a first upper portion and a first lower portion, and the first upper portion is wider than the first lower portion. The semiconductor device structure includes a spacer layer surrounding the gate stack. The spacer layer has a second upper portion and a second lower portion. The second upper portion is thinner than the second lower portion.

Abstract: A pixel array substrate including a substrate, data lines, gate lines, pixels, and transfer lines is provided. The data lines are disposed on the substrate and arranged in a first direction. The gate lines are disposed on the substrate and arranged in a second direction interlaced with the first direction. The pixels are disposed on the substrate, each of which includes an active device electrically connected to one of the data lines and one of the gate lines and a pixel electrode electrically connected to the active device. The transfer lines are arranged in the first direction and electrically connected to the gate lines, respectively. The pixels include first pixels. In a top view of the pixel array substrate, at least one of the pixel electrodes of the first pixels is partially overlapped with one of the transfer lines. A driving method of a pixel array substrate is also provided.

Abstract: A process for establishing vacuum insulation under cryogenic condition and an apparatus compatible with such process are described. When an insulation enclosure filled with high purity CO2 is evacuated to around 100 absolute Pa at ambient temperature, hard vacuum of below 1 absolute Pa may be automatically obtained within the insulation enclosure when temperature drops to around or below ?170° C. This process can be employed to provide vacuum insulation for cold box housing air separation units operated under cryogenic condition.

Abstract: A wound treatment recommendation method includes: storing a database; receiving a wound characterization record; generating a current data sequence according to the wound observation data in the wound characterization record; calculating similarity parameters of the current data sequence to each of case data sequences; regarding one of the similarity parameters with a highest restoration parameters and under a similarity threshold as the best case; selecting the questions used in the best case, excluding a plurality of existed questions in a questionnaire record, so as to establish a suggested questionnaire, and obtaining a plurality of answers of the suggested questionnaire; including all multiple reference cases within a specific range of values in each of the answers; and selecting multiple treatment cases including a nice recovery record from a plurality of treatment groups as at least one recommended treatment.

Abstract: An LED tube lamp comprises a lamp tube, a first circuit board disposed in the lamp tube having a plurality of light sources mounted thereon, and two lamp caps respectively disposed at both ends of the lamp tube and having a power supply disposed in the lamp caps. The power supply has a second circuit board with a first surface and a second surface opposite and parallel to each other. The lamp cap comprises a side wall, an end wall, and a slot with a first rib. There is a coupling structure protruded on the first rib with respect to the first surface of the second circuit board.

Abstract: A semiconductor device includes: a fin-shaped structure on the substrate; a shallow trench isolation (STI) around the fin-shaped structure; a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure; a second gate structure on the STI; and a third gate structure on the SDB structure, wherein a width of the third gate structure is greater than a width of the second gate structure.

Abstract: A display device includes a first substrate, first signal lines, second signal lines, active elements, pixel electrodes, a second substrate, a black matrix, a first spacer, and a second spacer. The active elements are electrically connected with the first signal lines and the second signal lines. The black matrix includes first portions and second portions. The first portions overlap the first signal lines. The second portions overlap the second signal lines. The first spacer overlaps a source and a drain of one of the active elements. The second spacer overlaps a source and a drain of another one of the active elements. The shortest distance between the center of the first spacer and the center line of the closest one of the first portions is different from the shortest distance between the center of the second spacer and the center line of the closest one of the first portions.

Abstract: A monitoring system applied to a shaping machine having a high speed electricity meter. The monitoring system includes a current obtaining device and an analyzing device. The current obtaining device is coupled to the high speed electricity meter to obtain a plurality of current signals from the operated shaping machine and in respond to the shaping machine executes a machining program, the current obtaining device extracts current variation data from the current signals. The machining program corresponds to a piece of the current variation data. The piece of the current variation datum comprises a maximum current and an occurring time that the maximum current being recorded. The analyzing device is configured to calculate a gap, based on the maximum currents and the occurring times corresponding to at least two successive machining programs. In respond to the gap time exceeding a predetermined threshold, the analyzing device generates a warning signal.