Abstract: An integrated circuit structure may include a capacitor having a semiconductor layer as a first plate and a gate layer as a second plate. A capacitor dielectric layer may separate the first plate and the second plate. A backside metallization may be coupled to the first plate of the capacitor. A front-side metallization may be coupled to the second plate of the capacitor. The front-side metallization may be arranged distal from the backside metallization.

Abstract: Apparatus (100) is described comprising: an antenna array (1021 . . . 102N); a plurality of units (1041 . . . 104N), each unit configured to mix a radio frequency signal from one or more of the antennas (102) with oscillating signals having phases defined by a global signal and to provide in-phase and quadrature-phase signals; a constellation rotation system configured to, for each unit, rotate a constellation point associated with the in-phase and quadrature-phase signals by a rotation angle to provide adjusted in-phase and quadrature-phase signals; signal buses (106, 107) for global in-phase and quadrature-phase signals configured to receive the adjusted in-phase and quadrature-phase signals, respectively, from a plurality of the units; a feedback system configured to, for each unit, compare one or more of the adjusted in-phase and quadrature-phase signals with one or more of the global in-phase and quadrature-phase signals to determine an error in the rotation angle.

Abstract: In a particular aspect, a device includes a substrate including a first trap rich layer region and a second trap rich layer region. The first trap rich layer region is separated from the second trap rich layer region by a portion of the substrate. The device further includes a semiconductor device layer including one or more components.

Abstract: An integrated radio frequency (RF) circuit structure may include an active device on a front-side surface of a semiconductor device layer. A backside surface opposite the front-side surface of the semiconductor device layer may be supported by a backside dielectric layer. The integrated RF circuit structure may also include a handle substrate on a front-side dielectric layer that is on a front-side of the active device and a least a portion of the front-side surface of the semiconductor device layer. The integrated RF circuit structure may further include the backside dielectric layer on the backside surface of the semiconductor device layer. The backside dielectric layer may be arranged distal from the front-side dielectric layer.

Abstract: A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.

Abstract: An integrated circuit structure may include a capacitor having a semiconductor layer as a first plate and a gate layer as a second plate. A capacitor dielectric layer may separate the first plate and the second plate. A backside metallization may be coupled to the first plate of the capacitor. A front-side metallization may be coupled to the second plate of the capacitor. The front-side metallization may be arranged distal from the backside metallization.

Abstract: A system for closing an aperture in a biological tissue includes at least one clip connected to at least one frame arm and for releasably retaining a surgical implant to the frame arm. The clip includes at least one locking structure for engaging a lock bar. A portion of the lock bar selectively engages or contacts the locking structure of the at least one clip to lock the at least one clip in a closed position by inhibiting rotation of the at least one clip when the lock bar is in a locked position. The lock bar allows the at least one clip to rotate to an open position when the lock bar is in an unlocked position. Methods for utilizing the system are also disclosed.

Abstract: A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.

Abstract: A device is provided for correlating at least one noisy analogue signal which is one of a plurality of signals obtained by a plurality of receivers. The device comprises a 1-bit quantisation element to which is supplied, in use, the noisy signal; a comparator configured to compare the quantised signal with a reference signal which is a consensus signal obtained by averaging data from the plurality of receivers; and an up/down counter that is configured to be incremented by a subset of the comparison signal.

Abstract: An integrated circuit structure may include a transistor on a front-side semiconductor layer supported by an isolation layer. The transistor is a first source/drain/body region. The integrated circuit structure may also include a raised source/drain/body region coupled to a backside of the first source/drain/body region of the transistor. The transistor is a raised source/drain/body region extending from the backside of the first source/drain/body region toward a backside dielectric layer supporting the isolation layer. The integrated circuit structure may further include a backside metallization coupled to the raised source/drain/body region.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. A structure includes a relaxed substrate including a bulk material, a strained layer directly on the relaxed substrate, where a strain of the strained layer is not induced by the relaxed substrate, and a transistor formed on the strained layer.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: A device is provided for correlating at least one noisy analog signal which is one of a plurality of signals obtained by a plurality of receivers. The device comprises a 1-bit quantization element to which the noisy signal is supplied; a comparator configured to compare the quantized signal with a reference signal which is a consensus signal obtained by averaging data from the plurality of receivers; and an up/down counter that is configured to be incremented by a subset of the comparison signal.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: Apparatus (100) is described comprising: an antenna array (1021 . . . 102N); a plurality of units (1041 . . . 104N), each unit configured to mix a radio frequency signal from one or more of the antennas (102) with oscillating signals having phases defined by a global signal and to provide in-phase and quadrature-phase signals; a constellation rotation system configured to, for each unit, rotate a constellation point associated with the in-phase and quadrature-phase signals by a rotation angle to provide adjusted in-phase and quadrature-phase signals; signal buses (106, 107) for global in-phase and quadrature-phase signals configured to receive the adjusted in-phase and quadrature-phase signals, respectively, from a plurality of the units; a feedback system configured to, for each unit, compare one or more of the adjusted in-phase and quadrature-phase signals with one or more of the global in-phase and quadrature-phase signals to determine an error in the rotation angle.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: Methods and apparatus for passivation of semiconductor interfaces by deuterium annealing are described. Harmonic improvements after deuterium annealing of a SOI semiconductor device with a trap-rich layer was demonstrated. Secondary ion mass spectroscopy after deuterium anneal shows a deuterium rich interface layer at the BOX-trap-rich layer interface of a MOSFET semiconductor device.

Abstract: A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.

Abstract: Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

Abstract: A rifle scope includes at least one optical sensor configured to capture optical data corresponding to at least one of a barrel of a firearm and an appendage coupled to the barrel. The rifle scope further includes a controller coupled to the at least one optical sensor and configured to determine an angular position of the barrel in response to capturing the optical data. The controller is configured to automatically determine an alignment of the rifle scope relative to the barrel in response to determining the angular position.