Abstract: A retail analytics platform is provided. The retail analytics platform is adapted for use in a retail store includes a speech analysis module configured to process audio files to determine a plurality of attributes. The speech analysis module comprises a voice activity detection (VAD) module, a speaker recognition module and an insights module configured to determine a plurality of performance metrics for the retail store based on the plurality of attributes.

Abstract: A quartz crystal microbalance (QCM) sensor is proposed. The QCM sensor comprises a piezoelectric substrate and at least two electrodes in contact with the substrate to induce shear deformations therein through the inverse piezoelectric effect. The substrate has a sensing surface, and, on that surface, a pattern of plasmonic nanoparticle accumulations protruding from the surface. Each accumulation of nanoparticles comprises a plurality of plasmonic nanoparticles arranged about a hump. Plasmonic hot spots are present between neighbouring accumulations of the pattern that are separated a distance that amounts to or to less than the average diameter of the accumulations of the pattern.

Abstract: Provided herein are structures and methods for detecting one or more analyte molecules present in a sample. In some embodiments, the one or more analyte molecules are detected using one or more supramolecular structures. In some embodiments, the supramolecular structures facilitate binding of a single detector molecule. In some embodiments, the stable state supramolecular structures are configured to provide a signal for analyte molecule detection and quantification. In some embodiments, the signal correlates to a DNA signal, such that detection and quantification of an analyte molecule comprises converting the presence of the analyte molecule into a DNA signal.

Abstract: Disclosed is system and method for allocating vehicles to ride requests. A ride request comprising information indicative of a pickup location and a drop location of a given ride is received. Vehicle information of a plurality of currently-available vehicles, driver information of respective drivers of the plurality of currently-available vehicles and fuel-station information of the one or more of the plurality of fuel stations is accessed. A distance to empty for each of the plurality of currently-available vehicles is predicted based on the vehicle information. One or more eligible vehicles that satisfy eligibility criteria are selected from amongst the plurality of currently-available vehicles. A vehicle from amongst the one or more eligible vehicles that is nearest to the pickup location is allocated.

Abstract: The present disclosure generally relates to assigning tasks to various user inputs, and detecting and responding to user inputs. In some embodiments, the present disclosure relates to assigning tasks to various user inputs received on a back surface of a device, and detecting and responding to user inputs on the back surface of the device.

Abstract: A centralized accounting system for invoice generation is described as a web-based portal accessible by parties of a supply chain finance relationship via one or more computer networks. The centralized system provides a computer-based, network accessible platform in which a customer and a vendor may negotiate and agree upon terms of a purchase order for products. The centralized system then approves the purchase order based on vendor and customer profile information, and sends a notification of the approved purchase order to a bank. The centralized system automatically generates a vendor invoice for the approved purchase order and submit the vendor invoice to the bank for payment according the terms of the supply chain finance relationship. The centralized system ensures that the vendor invoice is accurate for the approved purchase order. The centralized system may also automatically generate and submit a bank invoice to the customer for the approved purchase order.

Abstract: A transistor cell including a deep via that is at least partially lined with a dielectric material. The deep via may extend down to a substrate over which the transistor is disposed. The deep via may be directly connected to a terminal of the transistor, such as the source or drain, to interconnect the transistor with an interconnect metallization level disposed in the substrate under the transistor, or on at opposite side of the substrate as the transistor. Parasitic capacitance associated with the close proximity of the deep via metallization to one or more terminals of the transistor may be reduced by lining at least a portion of the deep via sidewall with dielectric material, partially necking the deep via metallization in a region adjacent to the transistor.

Abstract: A new wiring and power and communications system for an automobile that includes a plurality of devices, wherein the devices are connected to a backbone section that has an outer sheathing, a first conductor disposed within the outer sheathing, a second conductor disposed within the outer sheathing, a pair of inner sheathing members disposed within the outer sheathing and located on opposing sides of the at least one conductor, the inner sheathing members configured to electrically insulate the first conductor from the second conductor, and a shield member disposed within the outer sheathing.

Abstract: Systems and methods include providing functionality for the user device while operating in background on the user device including providing secure connectivity with a cloud-based system over a network; continuously collecting packets intercepted by the enterprise application over a time interval, wherein the collected packets are collected over the time interval; and responsive to an issue with functionality of the enterprise application, transmitting the collected packets to a back end server for troubleshooting of the issue. The time interval is a set amount of time, and each collected packet is deleted at the expiration of the time interval.

Abstract: In one embodiment, a system for managing communication connections in a virtualization environment includes a plurality of host machines implementing a virtualization environment, wherein each of the host machines includes a hypervisor, at least one user virtual machine (user VM), and a distributed file server that includes file server virtual machines (FSVMs) and associated local storage devices. Each FSVM and associated local storage device are local to a corresponding one of the host machines, and the FSVMs conduct I/O transactions with their associated local storage devices based on I/O requests received from the user VMs. Each of the user VMs on each host machine sends each of its respective I/O requests to an FSVM that is selected by one or more of the FSVMs for each I/O request based on a lookup table that maps a storage item referenced by the I/O request to the selected one of the FSVMs.

Abstract: Double gated thin film transistors are described. In an example, an integrated circuit structure includes an insulator layer above a substrate. A first gate electrode is on the insulator layer, the first gate electrode having a non-planar feature. A first gate dielectric is on and conformal with the non-planar feature of the first gate electrode. A channel material layer is on and conformal with the first gate dielectric. A second gate dielectric is on and conformal with the channel material layer. A second gate electrode is on and conformal with the second gate dielectric. A first source or drain region is coupled to the channel material layer at a first side of the first gate dielectric. A second source or drain region is coupled to the channel material layer at a second side of the first gate dielectric.

Abstract: Gate-all-around integrated circuit structures having an insulator fin on an insulator substrate, and methods of fabricating gate-all-around integrated circuit structures having an insulator fin on an insulator substrate, are described. For example, an integrated circuit structure includes an insulator fin on an insulator substrate. A vertical arrangement of horizontal semiconductor nanowires is over the insulator fin. A gate stack surrounds a channel region of the vertical arrangement of horizontal semiconductor nanowires, and the gate stack is overlying the insulator fin. A pair of epitaxial source or drain structures is at first and second ends of the vertical arrangement of horizontal semiconductor nanowires and at first and second ends of the insulator fin.

Abstract: Isolation schemes for gate-all-around (GAA) transistor devices are provided herein Integrated circuit structures including increased transistor source/drain contact area using a sacrificial source/drain layer are provided herein. In some cases, the isolation schemes include changing the semiconductor nanowires/nanoribbons in a targeted channel region between active or functional transistor devices to electrically isolate those active devices. The targeted channel region is referred to herein as a dummy channel region, as it is not used as an actual channel region for an active or functional transistor device. The semiconductor nanowires/nanoribbons in the dummy channel region can be changed by converting them to an electrical insulator and/or by adding dopant that is opposite in type relative to surrounding source/drain material (to create a p-n junction).

Abstract: Stacked finFET structures including a fin having at least a first layer of semiconductor material stacked over or under a second layer of semiconductor material. The first and second layers may include a Group IV semiconductor material layer and a Group III-V semiconductor material layer, for example. A stacked finFET may include an N-type finFET stacked over or under a P-type finFET, the two finFETs may have channel portions within the different semiconductor material layers. Channel portions of the first and second layers of semiconductor material may be coupled to separate gate electrodes that are vertically aligned. Channel portions of the first and second layers of semiconductor material may be vertically separated by subfin portions of the first and second layers. Different layers of dielectric material adjacent to the subfin portions may improve electrical isolation between the channel portions, for example as a source of fixed charge or impurity dopants.

Abstract: A distributed database maintains a table on a first plurality of partitions. A request to restore the table to a point-in-time is received. The database determines, based on log data of the partitions, a maximum version number of an operation processed by the partitions. The log data is processed to exclude, from the restoration, operations whose transactions were started after the point-in-time, by setting the version number of those operations to be greater than the maximum version number. The log data is then applied to a second plurality of partitions, where the version number of each applied operation is less than or equal to the determined maximum version number.

Abstract: A method and apparatus for estimating capacity of a system including an energy generation system, an energy storage system or both. The method and apparatus initially estimate the system capacity based on a facility location and size. The initial estimate may be adjusted through adjustment of at least one parameter. An updated capacity estimate is generated and displayed.

Abstract: Implementations are described herein for adapting existing source code snippets to new contexts. In various implementations, a command may be detected to incorporate an existing source code snippet into destination source code. An embedding may be generated based on the existing source code snippet, e.g., by processing the existing source code snippet using an encoder. The destination source code may be processed to identify one or more decoder constraints. Subject to the one or more decoder constraints, the embedding may be processed using a decoder to generate a new version of the existing source code snippet that is adapted to the destination source code.

Abstract: Systems and methods are provided for guiding movement of a tool. The system includes a tool and a manipulator. A guide handler obtains a target state for the tool and generates virtual constraints based on the target state and a current state of the tool. A constraint solver calculates a constraint force adapted to attract the tool toward the target state or repel the tool away from the target state based on the virtual constraints. A virtual simulator simulates dynamics of the tool in a virtual simulation based on the constraint force and input from one or more sensors, to output a commanded pose. The control system commands the manipulator to move the tool based on the commanded pose to thereby provide haptic feedback to the user that guides the user toward placing the tool at the target state or away from the target state.

Abstract: Methods, systems and computer program products are provided personalizing recommendations of items with associated explanations. The example embodiments described herein use contextual bandits to personalize explainable recommendations (“recsplanations”) as treatments (“Bart”). Bart learns and predicts satisfaction (e.g., click-through rate, consumption probability) for any combination of item, explanation, and context and, through logging and contextual bandit retraining, can learn from its mistakes in an online setting.

Abstract: An integrated circuit includes: a germanium-containing fin structure above a layer of insulation material; a group III-V semiconductor material containing fin structure above the layer of insulation material; a first gate structure on a portion of the germanium-containing fin structure; a second gate structure on a portion of the group III-V semiconductor material containing fin structure; a first S/D region above the layer of insulation material and laterally adjacent to the portion of the germanium-containing fin structure, the first S/D region comprising a p-type impurity and at least one of silicon or germanium; a second S/D region above the layer of insulation material and laterally adjacent to the portion of the group III-V semiconductor material containing fin structure, the second S/D region comprising an n-type impurity and a second group III-V semiconductor material; and a layer comprising germanium between the layer of insulation material and the second S/D region.