Abstract: Embodiments herein provide methods of forming a magnetic tunnel junction structure. The method includes forming a film stack that includes: a buffer layer; a seed layer disposed over the buffer layer; a first pinning layer disposed over the seed layer; a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer; a second pinning layer disposed over the SyF coupling layer; a structure blocking layer disposed over the second pinning layer; a magnetic reference layer disposed over the structure blocking layer; a tunnel barrier layer disposed over the magnetic reference layer; a magnetic storage layer disposed over the tunnel barrier layer; a capping layer disposed over the magnetic storage layer; and a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru; and forming a magnetic tunnel junction structure.

Abstract: Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.

Abstract: Methods and apparatus for simulating arcing that can occur during substrate fabrication is provided. In some embodiments, the method includes: loading a bare silicon substrate that has been pretreated with at least one of polybutylene terephthalate (PBT) or a film into a testing environment, performing a physical vapor deposition (PVD) process on the bare silicon substrate, and determining arcing occurrences on the bare silicon substrate caused during the PVD process.

Abstract: Methods and apparatus for forming a magnetic tunnel element are provided herein. A method of forming a magnetic tunnel element includes: depositing a magnetic layer atop a cobalt-chromium seed layer; and depositing a tunnel layer atop the magnetic layer to form a magnetic tunnel element, wherein the magnetic tunnel element has a TMR greater than 100. For example, a cobalt/platinum material or one or more layers thereof may be deposited directly atop a cobalt-chromium seed layer to produce improved devices.

Abstract: Embodiments of a process chamber are provided herein. In some embodiments, a process chamber includes a chamber body having an interior volume, a substrate support disposed in the interior volume, a target disposed within the interior volume and opposing the substrate support, a process shield disposed in the interior volume and having an upper portion surrounding the target and a lower portion surrounding the substrate support, the upper portion having an inner diameter that is greater than an outer diameter of the target to define a gap between the process shield and the target, and a gas inlet to provide a gas to the interior volume through the gap or across a front opening of the gap to substantially prevent particles from the interior volume from entering the gap during use.

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

Abstract: A magnesium alloy cast-rolling unit, including: a main body; a fluid supplier; an electric pushrod; a linkage mechanism; a horizontal platform; a screw; dovetail guide rails; and a bottom plate. The main body includes a base, a spring cylinder, a hydraulic adjustment cylinder, a connection portion, and a cast-rolling unit body. The connection portion includes an arc-shaped rail. The spring cylinder includes an actuation element. The actuation element includes a piston rod and a pressure strip. The piston rod includes an external thread at one end; and the pressure strip includes an internal thread corresponding to the external thread. The fluid supplier includes a head box, a corrugated pipe, a compression spring assembly including a gland cover, a connection pipe including a convex pipe joint and a concave pipe joint, a flat plate including a groove, a smelting furnace, and a horizontal operation platform.

Abstract: An apparatus for processing semiconductors that comprises a process chamber with multiple cathodes disposed in a top adapter assembly. The multiple cathodes having magnetron assemblies that comprise a shunt plate for supporting the magnetron assembly, a loop magnetic pole assembly coupled to the shunt plate with a loop magnetic pole, a linear magnetic pole, and a center magnetic pole, the linear magnetic pole extending from the loop magnetic pole into the center magnetic pole which is located at a center of the magnetron assembly, and an open loop magnetic pole arc assembly coupled to the shunt plate surrounding at least a portion of the center magnetic pole without intersecting with the linear magnetic pole. The magnetron assemblies are orientated such that an opening of the open loop magnetic pole arc assembly is oriented towards an outer wall of the shield.

Abstract: Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ a first pinning layer and a second pinning layer with a synthetic anti-ferrimagnetic layer disposed therebetween. The first pinning layer in contact with the seed layer can contain a single layer of platinum or palladium, alone or in combination with one or more bilayers of cobalt and platinum (Pt), nickel (Ni), or palladium (Pd), or combinations or alloys thereof, The first pinning layer and the second pinning layer can have a different composition or configuration such that the first pinning layer has a higher magnetic material content than the second pinning layer and/or is thicker than the second pinning layer. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.

Abstract: Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ seed layers of one or more layer of chromium (Cr), NiCr, NiFeCr, RuCr, IrCr, or CoCr, or combinations thereof. These seed layers are used in combination with one or more pinning layers, a first pinning layer in contact with the seed layer can contain a single layer of cobalt, or can contain cobalt in combination with bilayers of cobalt and platinum (Pt), iridium (Ir), nickel (Ni), or palladium (Pd), The second pinning layer can be the same composition and configuration as the first, or can be of a different composition or configuration. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.

Abstract: A method, an apparatus, and an interaction system for obtaining group information are provided. The method may include detecting a triggering operation for a group information platform in an interface of a client end of a mobile group work platform; sending a page acquisition request for the group information platform to a server end of the mobile group work platform; and displaying a function page of the group information platform based on page data returned by the server. Using the technical solutions of the present disclosure, processing of internal events of a group can be implemented on a mobile group work platform, while accesses and processing of events external to the group can also be implemented based on connections and communications between the mobile group work platform and a group information platform, thereby realizing quicker information interactions between inside and outside of the same group, and between different groups.

Abstract: Embodiments of the present disclosure are for systems and methods for fabrication of a magnetic tunnel junction stack. This fabrication can occur via methods including one or more of (1) heating the substrate after the deposition of a buffer layer on the substrate, prior to deposition of a seed layer; (2) cooling the substrate after the deposition of a second pinning layer, before deposition of a structure blocking layer; (3) heating the substrate during the deposition of a tunnel barrier layer and then cooling it after the deposition of the tunnel barrier layer is complete; (4) heating the substrate after the deposition of a magnetic storage layer on the tunnel barrier layer; and (5) cooling the substrate after the deposition of the magnetic storage layer before a first interlayer of the capping layer is deposited.

Abstract: A magnesium alloy cast-rolling unit, including: a main body; a fluid supplier; an electric pushrod; a linkage mechanism; a horizontal platform; a screw; dovetail guide rails; and a bottom plate. The main body includes a base, a spring cylinder, a hydraulic adjustment cylinder, a connection portion, and a cast-rolling unit body. The connection portion includes an arc-shaped rail. The spring cylinder includes an actuation element. The actuation element includes a piston rod and a pressure strip. The piston rod includes an external thread at one end; and the pressure strip includes an internal thread corresponding to the external thread. The fluid supplier includes a head box, a corrugated pipe, a compression spring assembly including a gland cover, a connection pipe including a convex pipe joint and a concave pipe joint, a flat plate including a groove, a smelting furnace, and a horizontal operation platform.

Abstract: Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.

Abstract: Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, a process chamber includes: a chamber body defining an interior volume; a substrate support to support a substrate within the interior volume; a plurality of cathodes coupled to the chamber body and having a corresponding plurality of targets to be sputtered onto the substrate; and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered and at least one pocket disposed in a backside of the shield to accommodate and cover at least another one of the plurality of targets not to be sputtered, wherein the shield is configured to rotate about and linearly move along a central axis of the process chamber.

Abstract: Methods for depositing a dielectric oxide layer atop one or more substrates disposed in or processed through a PVD chamber are provided herein. In some embodiments, such a method includes: sputtering source material from a target assembly onto a first substrate while the source material is at a first erosion state and while providing a first amount of RF power to the target assembly to deposit a dielectric oxide layer onto a first substrate having a desired resistance-area; and subsequently sputtering source material from the target assembly onto a second substrate while the source material is at a second erosion state and while providing a second amount of RF power to the target assembly, wherein the second amount of RF power is lower than the first amount of RF power by a predetermined amount calculated to maintain the desired resistance-area.

Abstract: A production line for recycling and processing waste materials of steel rolling, the production line including: an electromagnetic hoisting equipment; a conveying platform; a clamping-and-feeding device; a segmentation shear; a swing conveyor device; a pushing device; a rolling-type shearing machine; a chain-type conveyor track; a material guiding device; two shredding-type shearing machines; and a scrap collection device. The electromagnetic hoisting equipment is connected to the conveying platform, and is configured to hoist waste materials of steel rolling to the conveying platform; the conveying platform is connected to the clamping-and-feeding device, and is configured to convey the waste materials to the clamping-and-feeding device; the segmentation shear cooperates with the clamping-and-feeding device and is configured to segment the waste materials of steel rolling into steel plates; the pushing device is configured to push the steel plates to the rolling-type shearing machine.

Abstract: Embodiments herein provide methods of forming a magnetic tunnel junction structure. The method includes forming a film stack that includes: a buffer layer; a seed layer disposed over the buffer layer; a first pinning layer disposed over the seed layer; a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer; a second pinning layer disposed over the SyF coupling layer; a structure blocking layer disposed over the second pinning layer; a magnetic reference layer disposed over the structure blocking layer; a tunnel barrier layer disposed over the magnetic reference layer; a magnetic storage layer disposed over the tunnel barrier layer; a capping layer disposed over the magnetic storage layer; and a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru; and forming a magnetic tunnel junction structure.

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

Abstract: Embodiments herein provide film stacks utilized to form a magnetic tunnel junction (MTJ) structure on a substrate, comprising: a buffer layer; a seed layer disposed over the buffer layer; a first pinning layer disposed over the seed layer; a synthetic ferrimagnet (SyF) coupling layer disposed over the first pinning layer; a second pinning layer disposed over the SyF coupling layer; a structure blocking layer disposed over the second pinning layer; a magnetic reference layer disposed over the structure blocking layer; a tunnel barrier layer disposed over the magnetic reference layer; a magnetic storage layer disposed over the tunnel barrier layer; a capping layer disposed over the magnetic storage layer, wherein the capping layer comprises one or more layers; and a hard mask disposed over the capping layer, wherein at least one of the capping layer, the buffer layer, and the SyF coupling layer is not fabricated from Ru.