Abstract: A semiconductor package includes a chip having a first surface and a second surface; a mold configured to encapsulate the chip; a vertical conductive channel electrically connected to a pad formed on the second surface of the chip while passing through the mold; a wiring pattern electrically connected to a pad formed on the first surface of the chip and configured to perform electrical connection in the package; an optical device arranged on a surface of the semiconductor package to be electrically connected to the vertical conductive channel; and an external connection terminal configured to electrically connect the semiconductor package to the outside.

Abstract: Disclosed is an apparatus and method of processing substrate, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the process chamber, and is rotated at a predetermined direction; a chamber lid confronting with the substrate supporter, the chamber lid for covering the process chamber; and a gas distributor having a plurality of gas distribution modules for distributing gas to the substrate, wherein the plurality of gas distribution modules are connected to the chamber lid, wherein each of the gas distribution modules includes a power source electrode and a ground electrode confronting each other, a plasma discharge space is formed between the power source electrode and the ground electrode, and the plasma discharge space is not overlapped with a thin film formation region of the substrate supported by the substrate supporter.

Abstract: A method for controlling a vehicle installed with an automatic transmission, includes: a sudden stop determination step in which a controller determines whether the vehicle has stopped at a speed greater than or equal to a reference deceleration speed and whether a post-stop elapsed time is within a first reference time; a takeoff determination step in which the controller determines whether an input torque of the transmission exceeds zero within the first reference time when a shift range is in a driving range; a pressure control step in which, when the vehicle takes off, the controller elevates a line pressure of the transmission; a limitation determination step in which if a slippage extent of a turbine exceeds a reference slippage value for a second reference time, the controller limits the takeoff; and a torque reduction step in which the controller reduces a takeoff torque input of the transmission.

Abstract: Disclosed is an apparatus and method of processing substrate, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the process chamber, and is rotated at a predetermined direction; a chamber lid confronting with the substrate supporter, the chamber lid for covering the process chamber; and a gas distributor having a plurality of gas distribution modules for distributing gas to the substrate, wherein the plurality of gas distribution modules are connected to the chamber lid, wherein each of the gas distribution modules includes a power source electrode and a ground electrode confronting each other, a plasma discharge space is formed between the power source electrode and the ground electrode, and the plasma discharge space is not overlapped with a thin film formation region of the substrate supported by the substrate supporter.

Abstract: A lighting system includes a lighting unit comprising at least one lighting device, a sensing unit configured to measure at least one of atmospheric temperature and humidity, a controlling unit configured to compare the at least one of the temperature and the humidity measured by the sensor unit with set values and determine a color temperature of the lighting unit as a result of the comparison, and a driving unit configured to drive to the lighting unit to have the determined color temperature.

Abstract: According to an embodiment of the present disclosure, a solid electrolyte for a lithium battery comprises an oxide represented in the following chemical formula and a sintering aid including B2O3 or Bi2O3, wherein the chemical formula is L1+XAXB2?X(PO4)3, wherein A is one or more substances selected from the group consisting of aluminum (Al), chrome (Cr), gallium (Ga), iron (Fe), scandium (Sc), indium (In), ruthenium (Ru), yttrium (Y), and lanthanum (La), B is one or more substances selected from the group consisting of titanium (Ti), germanium (Ge), and zirconium (Zr), and X has a value from 0.1 to 0.5.

Abstract: A semiconductor package includes a chip having a first surface and a second surface; a mold configured to encapsulate the chip; a vertical conductive channel electrically connected to a pad formed on the second surface of the chip while passing through the mold; a wiring pattern electrically connected to a pad formed on the first surface of the chip and configured to perform electrical connection in the package; an optical device arranged on a surface of the semiconductor package to be electrically connected to the vertical conductive channel; and an external connection terminal configured to electrically connect the semiconductor package to the outside.

Abstract: A deposition apparatus includes: a substrate support having a main surface on which a substrate is placed; a body disposed on the main surface and including a hollow portion having an exposed upper portion; a plasma electrode unit provided at a inner circumferential surface of the body to separate the hollow portion into an upper space and a lower space; and a gas supply unit supplying process gas to the plasma electrode unit, wherein a gas exhaust channel extending from the lower space to an exhaust outlet provided at a top of the body is formed in the body.

Abstract: A system includes a power supply, a memory controller and a memory device. The memory controller is configured to receive power from the power supply, generate a memory power supply voltage for use by the memory device based on the power received from the power supply and provide the memory power supply voltage to the memory device.

Abstract: A method of manufacturing a semiconductor light-emitting device is provided. The method includes operations of forming a first conductive type semiconductor layer on a substrate; forming a V-pit in the first conductive type semiconductor layer; forming a defect decreasing structure in and over the V-pit; and forming a residual first conductive type semiconductor layer on the defect decreasing structure. By using the method, an excellent-quality semiconductor light-emitting device having a reduced crystal defect may be inexpensively manufactured.

Abstract: An apparatus for evaluating the quality of a crystal includes an optical device that measures a surface reflectance of a wafer in which a V-pit is formed; and a data processing unit that calculates a threading dislocation density by calculating a difference in surface reflectance of the wafer that is measured by the optical device.

Abstract: A lighting system includes a lighting unit comprising at least one lighting device, a sensing unit configured to measure at least one of atmospheric temperature and humidity, a controlling unit configured to compare the at least one of the temperature and the humidity measured by the sensor unit with set values and determine a color temperature of the lighting unit as a result of the comparison, and a driving unit configured to drive to the lighting unit to have the determined color temperature.

Abstract: A method for fabricating a nitride semiconductor thin film includes preparing a first nitride single crystal layer doped with an n-type impurity. A plurality of etch pits are formed in a surface of the first nitride single crystal layer by applying an etching gas thereto. A second nitride single crystal layer is grown on the first nitride single crystal layer having the etch pits formed therein.

Abstract: A semiconductor light emitting device may include: a first conductivity type semiconductor layer; an active layer disposed on the first conductivity type semiconductor layer; an electron-blocking layer disposed on the active layer; a second conductivity type semiconductor layer disposed on the electron-blocking layer; and a hole-diffusion layer disposed between the electron-blocking layer and the second conductivity type semiconductor layer. The hole-diffusion layer may include three layers having different energy band gaps and different resistance levels and at least one of the three layers may contain Al. A composition of the Al may be lower in the at least one layer than in the electron-blocking layer.

Abstract: A developing device to supply toner in a developer, including a development member which receives the developer on an outer circumferential surface thereof and supplies the toner to the image bearing member, a first regulation member including a first regulating portion that forms a first doctor gap between the outer circumferential surface of the development member and the first regulating portion, and a second regulation member disposed on an upstream side of the first regulation member in a rotational direction of the development member and includes a second regulating portion that forms a second doctor gap between the outer circumferential surface of the development member and the second regulating portion, the second doctor gaps at a central portion and both end portions in a longitudinal direction of the development member being different from each other.

Abstract: A method of fabricating a nitride semiconductor light emitting device is provided. The method includes growing a first group-III-nitride semiconductor layer on a substrate, the first group-III-nitride semiconductor layer having a top surface formed as a group-III-rich surface exhibiting a group-III-polarity and a bottom surface formed as a N-rich surface exhibiting a N-polarity. The method further includes selectively etching a N-polarity region in the top surface of the first group III nitride semiconductor layer, forming a second group III nitride semiconductor layer on the first group III nitride semiconductor layer to fill the etched N-polarity region and forming a light emitting structure including first and second conductivity type nitride semiconductor layers and an active layer on the second group III nitride semiconductor layer.

Abstract: Disclosed is an apparatus and method of processing substrate, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the process chamber, and is rotated at a predetermined direction; a chamber lid confronting with the substrate supporter, the chamber lid for covering the process chamber; and a gas distributor having a plurality of gas distribution modules for distributing gas to the substrate, wherein the plurality of gas distribution modules are connected to the chamber lid, wherein each of the gas distribution modules includes a power source electrode and a ground electrode confronting each other, a plasma discharge space is formed between the power source electrode and the ground electrode, and the plasma discharge space is not overlapped with a thin film formation region of the substrate supported by the substrate supporter.

Abstract: An apparatus for evaluating the quality of a crystal includes an optical device that measures a surface reflectance of a wafer in which a V-pit is formed; and a data processing unit that calculates a threading dislocation density by calculating a difference in surface reflectance of the wafer that is measured by the optical device.

Abstract: A method of manufacturing a semiconductor light emitting device includes forming, on a substrate, a first region of a light emitting structure and the light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A protective layer is formed on the first region in a first chamber. The substrate with the first region and the protective layer formed thereon is transferred to a second chamber. A second region is formed on the first region. The first and second regions are disposed in a direction perpendicular to the substrate. The protective layer is grown above a defective region included in the first region and removed before or while the second region is formed.

Abstract: A system includes a power supply, a memory controller and a memory device. The memory controller is configured to receive power from the power supply, generate a memory power supply voltage for use by the memory device based on the power received from the power supply and provide the memory power supply voltage to the memory device.