Abstract: A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

Abstract: A method of manufacturing a semiconductor integrated circuit device comprising forming a silicon oxide film as thin as 5 nm or less on the surfaces of p type wells and n type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about 5% of an NO gas to introduce nitrogen into the silicon oxide film so as to form a silicon oxynitride film, exposing the substrate to a nitrogen plasma atmosphere to further introduce nitrogen into the silicon oxynitride film in order to form a silicon oxynitride gate insulating film having a first peak concentration near the interface with the substrate and a second peak concentration near the surface thereof. Thereby, the concentration of nitrogen in the gate insulating film is increased without raising the concentration of nitrogen near the interface between the substrate and the gate insulating film to a higher level than required.

Abstract: Disclosed is a machine-readable medium for programming a computer that is a component of a computer network. The machine-readable medium includes a processor executable instruction for enabling a user to access over the computer network a dynamic web page with hierarchically arranged data representing information corresponding to the status of real world objects.

Abstract: Mutual diffusion of impurities in a gate electrode is suppressed near a boundary between an n-channel type MISFET and a p-channel type MISFET, which adopt a polycide's dual-gate structure. Since a gate electrode of an n-channel type MISFET and a gate electrode of a p-channel type MISFET are of mutually different conductivity types, they are separated to prevent the mutual diffusion of the impurities and are electrically connected to each other via a metallic wiring formed in the following steps. In a step before a gate electrode material is patterned to separate the gate electrodes, the mutual diffusion of the impurities before forming the gate electrodes is prevented by performing no heat treatment at a temperature of 700° C. or higher.

Abstract: After passing a position of transfer to a printing medium 10, a portion of an intermediate transfer member 1 on which an image is previously formed reaches the position of a cleaning unit 2. The cleaning unit 2 removes residual toner, whereby the intermediate transfer member 1 prepares for a next cycle of formation of images in the corresponding colors by means of the developing units 4, 5, 6, and 7. The cleaning unit 2 includes an application friction roller 21 and a bias roller 24. The application friction roller 21 has a function to weaken cohesion/firm adhesion of residual toner through application of a cleaning liquid to the intermediate transfer member 1 and a function to exfoliate and disperse the residual toner in the cleaning liquid through imposition of a shear force on the residual toner. The bias roller 24 includes a bias voltage generation mechanism 24a for applying a bias voltage between the bias roller 24 and the intermediate transfer member 1.

Abstract: A protection film is formed on a silicon oxide film 6 formed on the surface of a semiconductor substrate, a silicon oxide film is removed from a region where a thin gate-insulating film is to be formed by using, as a mask, a photoresist pattern that covers a region where a thick gate-insulating film is to be formed, and, then, the photoresist pattern is removed followed by washing. Then, the semiconductor substrate is heat-oxidized or a film is deposited thereon to form gate-insulating films having different thicknesses.

Abstract: A method of manufacturing a semiconductor integrated circuit device includes steps of forming a silicon oxide film as thin as 5 nm or less on the surfaces of p-type wells and n-type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about 5% of an NO gas to introduce nitrogen into the silicon oxide film to form a silicon oxynitride film, and exposing the substrate to a nitrogen plasma atmosphere to further introduce nitrogen into the silicon oxynitride film to form a silcon oxynitride gate insulating film having a first peak concentration near the interface with the substrate and a second peak concentration near the surface thereof. Thereby, the concentration of nitrogen in the gate insulating film is increased without raising the concentration of nitrogen near the interface between the substrate and the gate insulating film to a higher level than required.

Abstract: In the present invention, a toner image produced through a development process of supplying a liquid toner onto an image bearing body bearing an electrostatic latent image is transferred from the image bearing body onto an intermediate transfer body and then transferred from the intermediate transfer body onto a printing medium by use of a backup roller in a transfer-and-fixation zone. The printing medium is preheated to a temperature required for transfer and fixation before the printing medium reaches the transfer-and-fixation zone. No heating means is provided in the transfer-and-fixation zone, and the intermediate transfer body and the backup roller are pressed against each other at a high pressure ranging from 10 kg/cm2 to 60 kg/cm2.

Abstract: The present invention relates to an adhesive resin composition comprising a heat-generating material (A) which generates heat when subjected to high frequency induction and a thermoplastic resin (B) modified with a monomer having a functional group which reacts with an inorganic, the thermoplastic resin (B) having a melting point ranging from 90° C. to 200° C. The present invention also relates to a method for separating a bonded article into adherends, the method comprising detaching by induction heating the bonded portions of adherends bonded together by the thermoplastic resin composition comprising a heat-generating material (A) which generates heat when subjected to high frequency induction and a thermoplastic resin (B) modified with a monomer having a functional group which reacts with an inorganic substance and has a melting point ranging from 90° C. to 200° C.

Abstract: A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

Abstract: A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

Abstract: A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

Abstract: According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.

Abstract: In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is suppressed. A gate insulating film of MISFETs constituting an internal circuit is comprised of a silicon oxynitride film. Another gate insulating film of MISFETs constituting an I/O circuit is comprised of a laminated silicon oxynitride film and a high dielectric film. A process of forming the two types of gate insulating films on the substrate is continuously carried out in a treatment apparatus of a multi-chamber system. Accordingly, the substrate will not be exposed to air. Therefore, it is possible to suppress the inclusion of undesirable foreign matter and the formation of a natural oxide film at the interface between the substrate and the gate insulating films.

Abstract: A liquid-development electrophotographic apparatus utilizes a nonvolatile, high-viscosity, high-concentration liquid toner as a liquid developer. A developing section is in contact with photosensitive drums 11-14, on which an electrostatic latent image is formed, so that the liquid developer is supplied onto photosensitive drums 11-14. Toner particles contained in the liquid developer adhere to the photosensitive drums 11-14 according to an electric field established between the developing section and the photosensitive drums 11-14 to form toner images. The toner images are transferred from the photosensitive drums 11-14 to an intermediate transfer section. A transfer-and-fixation section includes a heater to melt-transfer the toner images onto the printing medium. A development section is disposed at a lower portion of the apparatus to prevent smudging of the printing medium and the intermediate transfer section even when the liquid toner spills.

Abstract: A protection film is formed on a silicon oxide film 6 formed on the surface of a semiconductor substrate, a silicon oxide film is removed from a region where a thin gate-insulating film is to be formed by using, as a mask, a photoresist pattern that covers a region where a thick gate-insulating film is to be formed, and, then, the photoresist pattern is removed followed by washing. Then, the semiconductor substrate is heat-oxidized or a film is deposited thereon to form gate-insulating films having different thicknesses.

Abstract: A liquid-development electrophotographic apparatus forms on a toner-image-bearing body a plurality of color images developed by a plurality of developing units, one for each color, that use liquid toner. One or more carrier-removing units for removing excessive carrier from a toner layer that forms a toner image are disposed downstream of each developing unit and upstream of the next developing unit disposed upstream of the former developing unit with respect to a process progress direction. Each carrier-removing unit includes two or more conductive collection rollers to which a bias voltage is applied in such a direction as to press toner against the toner-image-bearing body and which is brought into contact with the toner-image-bearing body. The upstream roller is rotated in the same direction as the direction of surface movement of the toner-image-bearing body, whereas the downstream roller is rotated in the opposite direction.

Abstract: A method of manufacturing a semiconductor integrated circuit device comprising forming a silicon oxide film as thin as 5 nm or less on the surfaces of p type wells and n type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about 5% of an NO gas to introduce nitrogen into the silicon oxide film so as to form a silicon oxynitride film, exposing the substrate to a nitrogen plasma atmosphere to further introduce nitrogen into the silicon oxynitride film in order to form a silicon oxynitride gate insulating film having a first peak concentration near the interface with the substrate and a second peak concentration near the surface thereof. Thereby, the concentration of nitrogen in the gate insulating film is increased without raising the concentration of nitrogen near the interface between the substrate and the gate insulating film to a higher level than required.

Abstract: In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is suppressed. A gate insulating film of MISFETs constituting an internal circuit is comprised of a silicon oxynitride film. Another gate insulating film of MISFETs constituting an I/O circuit is comprised of a laminated silicon oxynitride film and a high dielectric film. A process of forming the two types of gate insulating films on the substrate is continuously carried out in a treatment apparatus of a multi-chamber system. Accordingly, the substrate will not be exposed to air. Therefore, it is possible to suppress the inclusion of undesirable foreign matter and the formation of a natural oxide film at the interface between the substrate and the gate insulating films.

Abstract: A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film