Abstract: A process for producing a photovoltaic device that suppresses variations in the photovoltaic conversion efficiency within the plane of a large surface area substrate, suppresses fluctuations in the module power output between production lots, and enables an improvement in the productivity. A process for producing a photovoltaic device that includes forming a silicon-based photovoltaic layer on a substrate using a plasma enhanced CVD method that employs a gas containing a silane-based gas and hydrogen gas as the raw material gas, under conditions in which the flow rate of the hydrogen gas per unit surface area of the substrate is not less than 80 slm/m2.

Abstract: An ultrasonic motor which exhibits stable performances by suppressing irregularities of magnitudes of two standing waves excited by a piezoelectric element is provided.

Abstract: A calculation unit calculates a magnitude of acceleration in at least one of three separate directions and calculates a synthesized value indicating the magnitudes of the accelerations in the three directions based on the calculated magnitude of the acceleration and the acceleration in the direction separate from at least one of the directions.

Abstract: The ultraviolet ray sensor measures the intensity of ultraviolet rays irradiated to the ultraviolet ray receiving surface. The CPU performs control to measure ultraviolet intensity in a case in which the ultraviolet ray receiving surface of the ultraviolet ray sensor faces in a predetermined direction.

Abstract: A thin-film inspection apparatus includes a storage section (14) that stores at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum that are affected by a variation in the film thickness of at least one of a first transparent thin film and a second transparent thin film are each associated with the film thickness of the first transparent thin film and the film thickness of the second transparent thin film; a light irradiation section (11) that irradiates an inspection-target substrate (S) with white light through a transparent glass substrate; a light receiving section (12) that receives reflected light reflected from the inspection-target substrate (S); and an arithmetic section (15) that obtains measurement values of the feature values stored in the storage section (14) from a spectral reflectance spectrum generated based on the received reflected light and that calculates the film thickness of each of the first transpa

Abstract: An object is to reduce the effect of a film thickness variation on the substrate surface of a thin film and improve the measuring accuracy. Provided are a light source that radiates single-wavelength light to an inspection-target substrate (W), which is formed by forming a thin film on a glass substrate from the glass substrate side; a light receiving element that is disposed such that the light receiving axis intersects with the optical axis of illumination light emitted from the light source at a predetermined inclination angle and that receives diffused transmitted light that has been transmitted through the inspection-target substrate W; and a computer (7) that obtains a haze ratio of the thin film on the basis of the intensity of the light received by the light receiving element.

Abstract: An object is to efficiently measure the resistivity of a transparent conductive film with high accuracy in a non-destructive and non-contact manner.

Abstract: A photovoltaic device in which, by optimizing the structures for a substrate-side transparent electrode layer, an intermediate layer, and a back electrode layer, the extracted electrical current can be increased. The photovoltaic device includes at least a transparent electrode layer, a photovoltaic layer and a back electrode layer provided on a substrate, wherein the surface of the transparent electrode layer on which the photovoltaic layer is disposed includes a textured structure composed of ridges and a fine micro-texture provided on the surface of the ridges, the pitch of the textured structure is not less than 1.2 ?m and not more than 1.6 ?m, the height of the ridges is not less than 0.2 ?m and not more than 0.8 ?m, the pitch between peaks in the fine micro-texture is not less than 0.05 ?m and not more than 0.14 ?m, and the height of peaks is not less than 0.02 ?m and not more than 0.1 ?m.

Abstract: Provided is a photoelectric conversion device in which the conductivity after hydrogen-plasma exposure is set within an appropriate range, thereby suppressing the leakage current and improving the conversion efficiency. A photoelectric conversion device includes, on a substrate, a photoelectric conversion layer having at least two power generation cell layers, and an intermediate contact layer provided between the power generation cell layers. The intermediate contact layer mainly contains a compound represented by Zn1-xMgxO (0.096?x?0.183).

Abstract: Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device includes a step of forming a silicon photoelectric conversion layer on a substrate by a plasma CVD method. In the fabrication method for the photoelectric conversion device, the step of forming the photoelectric conversion layer includes a step of forming an i-layer formed of crystalline silicon and a step of forming, on the i-layer, an n-layer under a condition with a hydrogen dilution ratio of 0 to 10, inclusive.

Abstract: A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6.

Abstract: A vehicle light can include a light emitting diode (LED) serving as a light source and an optical system for controlling a light distribution pattern of the light beams from the LED light source utilizing a light guide (such as a lens body having an inner reflecting surface). The vehicle light can project illumination light with a low beam light distribution pattern. The vehicle light can include an LED light source and a lens body serving as a light guide. The lens body can include a light incident surface, a reflecting surface, and a light exiting surface. The LED light source can have a rearmost end light emitting point from which light beams are emitted to form a bright-dark boundary line.

Abstract: A vehicle light can include an optical system for controlling a light distribution pattern, and the optical system is a light guide (being a lens body having an inner reflecting surface). The vehicle light can project illumination light with a low bean light distribution pattern. The vehicle light can include an LED light source and a lens body serving as a light guide. The lens body can include a light incident surface, a reflecting surface, and a light exiting surface. The LED light source can have a rearmost end light emitting point from which light beams are emitted to form a bright-dark boundary line.

Abstract: An object is to improve production efficiency as well as reducing the burden on an operator. Light is radiated on a crystalline silicon film used for a thin-film silicon device, reflection light reflected by the crystalline silicon film is detected, a parameter of the luminance of the detected reflection light is measured, and film quality evaluation of the crystalline silicon film is performed in accordance with whether the parameter of the luminance is within a predetermined proper range or not.

Abstract: An electromagnetic screen (1) comprises a plurality of antennas (4) each of which reflects an electromagnetic wave having a specific frequency. The plurality of antennas (4) are arranged so as to constitute a pattern. Each of the antennas (4) has three segment-shaped first element parts (4a) and three segment-shaped second element parts (4b). The three first element parts (4a) radially extend from the center of the antenna (4) by substantially the same length such that any two of the three first element parts (4a) form an angle of 120° with each other. Each of the second element parts (4b) are connected to an outer edge of a corresponding one of the first element parts (4a).

Abstract: After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

Abstract: In a solid-state image sensor device, the efficiency of light collection to a light-receiving region of a photodiode PD through a microlens is enhanced by arranging a wiring line configuration. Each of the first metal layer and the second metal layer is arranged to have a ring-like portion formed along a profile of the light-receiving region of the photodiode PD in a fashion that an upper position over the photodiode PD is surrounded by the first and second metal layers and a third metal layer.

Abstract: A sheet metal model creation device (1) for creating a sheet metal model while displaying a three-view drawing includes: a three-view drawing reader (13) configured to read three-view drawing information and display the three-view drawing on a screen; a three-view drawing display controller (15); a three-dimensional face creator (17) configured to create a three-dimensional face associated with an element of the three-view drawing selected on the screen in response to an operation of a mouse; and a model display controller (19) configured to combine the three-dimensional face with the sheet metal model and display the model. Here, the operation of the mouse is movement of a mouse (7), and selection of the element of the three-view drawing on the screen is selection of an element within a region that is based on a position of a mouse pointer associated with the movement of the mouse (7).

Abstract: An object is to efficiently measure the resistivity of a transparent conductive film with high accuracy in a non-destructive and non-contact manner.

Abstract: A photovoltaic device that exhibits improved light absorption properties for the electric power generation layer and a process for producing such a photovoltaic device are provided by optimizing the surface shape of the back surface structure. A photovoltaic device 100 comprising a first transparent electrode layer 2, an electric power generation layer 3, a second transparent electrode layer 6 and a back electrode layer 4 provided sequentially on a substrate 1, wherein the back electrode layer 4 comprises a thin film of silver, and the surface of the second transparent electrode layer 6 on the surface of the back electrode layer 4 has a fine uneven texture, for which the surface area magnification ratio relative to the projected surface area is not less than 10% and not more than 32%.