Patents by Inventor Sheng Wei

Sheng Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11923399
    Abstract: A micro light-emitting diode display panel includes a substrate, at least one light-emitting element, a reflective layer and a light-absorbing layer. The at least one light-emitting element is disposed on the substrate to define at least one pixel, and each light-emitting element includes micro light-emitting diodes. The reflective layer is disposed on the substrate and located between the micro light-emitting diodes. The reflective layer has cavities surrounding the micro light-emitting diodes, such that a thickness of a portion of the reflective layer close to any one of the micro light-emitting diodes is greater than a thickness of a portion of the reflective layer away from the corresponding micro light-emitting diode. The light-absorbing layer is at least disposed in the cavities of the reflective layer.
    Type: Grant
    Filed: March 31, 2021
    Date of Patent: March 5, 2024
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Sheng-Yuan Sun, Loganathan Murugan, Po-Wei Chiu, Yun-Li Li
  • Publication number: 20240069299
    Abstract: An optical element driving mechanism includes a movable assembly, a fixed assembly, and a driving assembly. The movable assembly is configured to be connected to an optical element. The movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly in a range of motion. The optical element driving mechanism further includes a positioning assembly configured to position the movable assembly at a predetermined position relative to the fixed assembly when the driving assembly is not operating.
    Type: Application
    Filed: November 9, 2023
    Publication date: February 29, 2024
    Inventors: Chao-Chang HU, Kuen-Wang TSAI, Liang-Ting HO, Chao-Hsi WANG, Chih-Wei WENG, He-Ling CHANG, Che-Wei CHANG, Sheng-Zong CHEN, Ko-Lun CHAO, Min-Hsiu TSAI, Shu-Shan CHEN, Jungsuck RYOO, Mao-Kuo HSU, Guan-Yu SU
  • Publication number: 20240071999
    Abstract: A first polymer layer is formed across a package region and a test region. A first metal pattern is formed in the package region and a first test pattern is simultaneously formed in the test region. The first metal pattern has an upper portion located on the first polymer layer and a lower portion penetrating through the first polymer layer, and the first test pattern is located on the first polymer layer and has a first opening exposing the first polymer layer. A second polymer layer is formed on the first metal pattern in the package region and a second test pattern is simultaneously formed on the first test pattern in the test region. The second polymer layer has a second opening exposing the upper portion of the first metal pattern, and the second test pattern has a third opening greater than the first opening of the first test pattern.
    Type: Application
    Filed: August 24, 2022
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tseng Hsing Lin, Chien-Hsun Lee, Tsung-Ding Wang, Jung-Wei Cheng, Hao-Cheng Hou, Sheng-Chi Lin, Jeng-An Wang, Yao-Cheng Wu
  • Publication number: 20240071954
    Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.
    Type: Application
    Filed: November 9, 2023
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
  • Publication number: 20240071953
    Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
  • Patent number: 11916170
    Abstract: A micro-light-emitting diode chip includes an epitaxial structure, an electrode, a transparent structure, and a reflection layer. The epitaxial structure has a light exit surface, a back surface opposite to the light exit surface, and a sidewall surface. The sidewall surface is connected to the light exit surface and the back surface. The electrode is electrically coupled to the epitaxial structure. The transparent structure has an inner surface and an outer surface opposite to the inner surface. The inner surface is connected to the sidewall surface. A distance between the outer surface and the inner surface on a plane where the back surface is located is less than a distance between the outer surface and the inner surface on a plane where the light exit surface is located. The reflection layer is in direct contact with the outer surface. A micro-light-emitting diode display is also provided.
    Type: Grant
    Filed: September 13, 2021
    Date of Patent: February 27, 2024
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Sheng-Yuan Sun, Loganathan Murugan, Po-Wei Chiu
  • Publication number: 20240062899
    Abstract: An electronic device and a method for diagnosing heart state based on electrocardiogram (ECG) are provided. An ECG file is obtained, and the ECG file is in a first file format and includes a plurality of potential traces of a plurality of leads. The ECG file is converted to a second file format to obtain electrocardiogram data corresponding to multiple leads. Each potential trace relative to time in the ECG file is converted to the ECG data of each lead. Integrated ECG data associated with the leads is generated based on the ECG data of the plurality of leads through the zero-padding operation and the stacking operation. A diagnostic result of heart status is generated based on the integrated ECG data and a deep learning model.
    Type: Application
    Filed: December 22, 2022
    Publication date: February 22, 2024
    Applicants: Acer Incorporated, Acer Medical Inc., National Health Research Institutes, Chang Gung Memorial Hospital, Keelung
    Inventors: Jun-Hong Chen, Sheng-Wei Chu, Pin-Cyuan Lin, Yi-Chun Lin, Chi-Hsiao Yeh, Ting-Fen Tsai
  • Patent number: 11903183
    Abstract: Systems, methods, and apparatus including conductive line contact regions having multiple multi-direction conductive lines and staircase conductive line contact structures for semiconductor devices. One memory device comprises arrays of vertically stacked memory cells, having multiple multi-direction conductive lines arrays of vertically stacked memory cells, including a vertical stack of layers formed from repeating iterations of a group of layers, the group of layers comprising: a first dielectric material layer, a semiconductor material layer, and a second dielectric material layer, the second dielectric material layer having a conductive line formed in a horizontal plane therein, and the vertical stack of layers having multiple multi-direction conductive lines in an interconnection region with a first portion of the interconnection region formed in an array region and a second portion formed in a conductive line contact region that is spaced from the array region.
    Type: Grant
    Filed: October 1, 2020
    Date of Patent: February 13, 2024
    Assignee: Micron Technology, Inc.
    Inventors: Byung Yoon Kim, Sheng Wei Yang, Si-Woo Lee, Mark Zaleski
  • Patent number: 11883536
    Abstract: A method of preparing polylactic acid (PLA) microsphere and polylactic-co-glycolic acid (PLGA) microsphere is provided, including the following steps. A first solution is provided, including polylactic acid or polylactic-co-glycolic acid and an organic solvent. A second solution is provided, including polyvinyl alcohol, sodium carboxymethyl cellulose and an aqueous solution. The first solution is added to the second solution and, at the same time, the second solution is agitated until polylactic acid is solidified to form a plurality of polylactic acid microspheres, or until polylactic-co-glycolic acid is solidified to form a plurality of polylactic-co-glycolic acid microspheres. The polylactic acid microspheres or polylactic-co-glycolic acid microspheres are collected.
    Type: Grant
    Filed: March 31, 2021
    Date of Patent: January 30, 2024
    Assignees: TAIPEI MEDICAL UNIVERSITY, PANION & BF BIOTECH INC.
    Inventors: Ming-Thau Sheu, Yu-Ying Hsu, Yu-De Su, Yu-Hsuan Liu, Pu-Sheng Wei
  • Patent number: 11879934
    Abstract: A test kit for testing a device under test (DUT) includes a socket structure for containing the DUT, and a plunger assembly detachably coupled with the socket structure. The plunger assembly includes a multi-layered structure having at least an interposer substrate sandwiched by a top socket and a nest.
    Type: Grant
    Filed: May 3, 2022
    Date of Patent: January 23, 2024
    Assignee: MEDIATEK INC.
    Inventors: Jing-Hui Zhuang, Ying-Chou Shih, Sheng-Wei Lei, Chang-Lin Wei, Chih-Yang Liu, Che-Hsien Huang, Yi-Chieh Lin
  • Publication number: 20240021475
    Abstract: A semiconductor structure includes a substrate, several gate structures formed in the substrate, dielectric portions formed on the respective gate structures, spacers adjacent to and extending along the sidewalls of the dielectric portions, source regions formed between the substrate and the spacers, and contact plugs formed between adjacent gate structures and contact the respective source regions. The source regions are adjacent to the gate structures. The sidewalls of the spacers are aligned with the sidewalls of the underlying source regions.
    Type: Application
    Filed: July 12, 2022
    Publication date: January 18, 2024
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Po-Hsiang LIAO, Sheng-Wei FU, Chung-Yeh LEE
  • Publication number: 20230420529
    Abstract: A semiconductor device includes a substrate, a body region on the substrate, a source region on the body region, a first trench electrode passing through the source region, the body region and a portion of the substrate, a first dielectric cap layer, a first dielectric liner and a conductive layer. The first dielectric cap layer includes a first dielectric portion directly above the first trench electrode and first dielectric spacers on two opposite sides of the first dielectric portion. The first dielectric liner surrounds the first trench electrode and the first dielectric portion. The conductive layer covers the first dielectric cap layer and includes an electrode contact. The electrode contact includes a first portion in the body region and a second portion adjacent to one of the first dielectric spacers, where the first and second portions have the same width.
    Type: Application
    Filed: June 26, 2022
    Publication date: December 28, 2023
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Po-Hsiang Liao, Sheng-Wei Fu, Chung-Yeh Lee
  • Patent number: 11848282
    Abstract: Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating material—such as a low-? dielectric material—at least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include a barrier member extending vertically from the bond pad toward the semiconductor substrate and configured to inhibit crack propagation through the insulating material.
    Type: Grant
    Filed: August 16, 2022
    Date of Patent: December 19, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Hyunsuk Chun, Sheng Wei Yang, Shams U. Arifeen
  • Publication number: 20230384030
    Abstract: The present disclosure is directed to a wafer drying system and method that detects airborne molecular contaminants in a drying gas as a feedback parameter for a single wafer or multi-wafer drying process. For example, the system comprises a wafer drying station configured to dispense a drying gas over one or more wafers to dry the one or more wafers, a valve configured to divert the drying gas to a first portion and a second portion, and an exhaust line configured to exhaust the first portion of the drying gas. The system further comprises a detector configured to receive the second portion of the drying gas and to determine a real time property of the second portion of the drying gas, and a control unit configured to control a feedback operation of the wafer drying station based on the real time property of the second portion of the drying gas.
    Type: Application
    Filed: August 9, 2023
    Publication date: November 30, 2023
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei-Chun Hsu, Sheng-Wei Wu, Shu-Yen Wang
  • Publication number: 20230384813
    Abstract: A low-dropout regulator circuit includes a reference circuit, an amplifying circuit, a power switch circuit, a feedback circuit, and a control circuit. The reference circuit is configured to generate a reference voltage. The amplifying circuit is configured to generate an amplifying voltage according to the reference voltage and a feedback voltage. The power switch circuit is configured to receive the amplifying voltage and generate an output voltage at an output terminal according to an input voltage. The feedback circuit is configured to generate the feedback voltage according to the output voltage. The control circuit is configured to control the power switch circuit according to the input voltage and a signal from the reference circuit.
    Type: Application
    Filed: May 11, 2023
    Publication date: November 30, 2023
    Inventors: Sheng-Wei LIN, Wei-Cheng TANG
  • Patent number: 11818912
    Abstract: A display may have organic light-emitting diode pixels formed from thin-film circuitry. The thin-film circuitry may be formed in thin-film transistor (TFT) layers and the organic light-emitting diodes may include anodes and cathodes and an organic emissive layer formed over the TFT layers between the anodes and cathodes. The organic emissive layer may be formed via chemical evaporation techniques. The display may include moisture blocking structures such as organic emissive layer disconnecting structures that introduce one or more gaps in the organic emissive layer during evaporation so that any potential moisture permeating path from the display panel edge to the active area of the display is completely terminated.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: November 14, 2023
    Assignee: Apple Inc.
    Inventors: Tsung-Ting Tsai, Abbas Jamshidi Roudbari, Chuan-Sheng Wei, HanChi Ting, Jae Won Choi, Jianhong Lin, Nai-Chih Kao, Shih Chang Chang, Shin-Hung Yeh, Takahide Ishii, Ting-Kuo Chang, Yu Hung Chen, Yu-Wen Liu, Yu-Chuan Pai, Andrew Lin
  • Publication number: 20230348555
    Abstract: Disclosed are compositions and methods for treating disease or condition caused or exacerbated by S100A9 activity, such as myelodysplastic syndromes (MDS) using a composition comprising an effective amount of a CD33/S100A9 inhibitor.
    Type: Application
    Filed: February 20, 2023
    Publication date: November 2, 2023
    Inventors: Alan F. List, Sheng Wei
  • Patent number: 11766703
    Abstract: The present disclosure relates to an apparatus and a method for wafer cleaning. The apparatus can include a wafer holder configured to hold a wafer; a cleaning nozzle configured to dispense a cleaning fluid onto a first surface (e.g., front surface) of the wafer; and a cleaning brush configured to clean a second surface (e.g., back surface) of the wafer. Using the cleaning fluid, the cleaning brush can clean the second surface of the wafer with a scrubbing motion and ultrasonic vibration.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: September 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Bo Chen Chen, Sheng-Wei Wu, Yung-Li Tsai
  • Patent number: 11745110
    Abstract: A teammate recommendation method for a multiplayer online game is proposed. The teammate recommendation method includes the steps of: determining one or more characteristic values for each of a plurality of players based on past game performance information of the players; dividing the players into a plurality of groups based on the characteristic values of the players; determining a Key Performance Indicator (KPI) for each of a plurality of combinations of the groups based on teammate information and team ranking of each game in the past game performance information; selecting one of the combinations, which includes a first group that the first player belongs to, based on the KPIs of the combinations; and recommending one or more second players based on the selected combination.
    Type: Grant
    Filed: May 5, 2021
    Date of Patent: September 5, 2023
    Assignee: ACER INCORPORATED
    Inventors: Chun-Hsien Li, Sheng-Wei Chu, Chia-Shang Yuan, Jun-Hong Chen, Te-Chung Huang, Tsung-Hsien Tsai, Yueh-Yarng Tsai, Pin-Cyuan Lin
  • Patent number: 11745917
    Abstract: Embodiments of the disclosure are directed to a transportation system for carrying servers. The transportation system includes a server rack and a shock-absorbing pallet. The shock-absorbing pallet is secured under the server rack and configured to move relative to the server rack to dampen vibration during transportation of the server rack. The shock-absorbing pallet includes a top cover, a bottom cover, one or more isolation devices, and one or supporting layers. The one or more isolation devices are disposed between the top cover and the bottom cover. Each isolation device includes a shock-absorbing component coupled to the top cover and the bottom cover. The one or more supporting layers are secured between the top cover and the bottom cover around the one or more isolation devices. The one or more supporting layers have a plurality of slots for guiding a pallet lifter therethrough.
    Type: Grant
    Filed: December 14, 2021
    Date of Patent: September 5, 2023
    Assignee: QUANTA COMPUTER INC.
    Inventors: Chao-Jung Chen, Ming-Sheng Chang, Sheng-Wei Tang, Ta-Chih Chen