Abstract: The disclosure provides an interposer substrate and a method for manufacturing the same. The method includes forming an insulating protection layer having a phosphorus compound on a substrate body, thereby providing toughness and strength as required when the thickness of the interposer substrate becomes too thin, and preventing substrate warpage when the substrate has a shrinkage stress or structural asymmetries.

Abstract: A semiconductor package structure includes a substrate, a chip, bumps, an encapsulation layer and a thermal expansion-matching layer. The chip is located on a top surface of the substrate. The bumps electrically connect the chip and the inner connection pads of the substrate. The encapsulation layer covers the bumps, the chip and the top surface of the substrate. The thermal expansion-matching layer covers the whole top surface of the encapsulation layer, and exposes the side surfaces of the encapsulation layer. The thermal expansion coefficient of the thermal expansion-matching layer is different from that of the encapsulation layer. The side surface of the thermal expansion-matching layer is flush with that of the encapsulation layer. The thermal expansion-matching layer balances the inner stresses caused by the difference of the thermal expansion. Thus, the invention reduces the warpage problem of the formed package.

Abstract: A flip-chip package substrate is provided. A strengthening structure is provided on one side of a circuit structure to increase the rigidity of the flip-chip package substrate. When the flip-chip package substrate is used in large-scale packaging, the flip-chip package substrate can have good rigidity, so that the electronic package can be prevented from warping.

Abstract: A semiconductor package structure includes a chip and a substrate having a recess. The substrate includes a base dielectric layer as the bottom of the recess, and numbers of supporting dielectric layers as the side surfaces of the recess. The substrate further includes a base connecting layer in the base dielectric layer, and numbers of supporting connecting layers in the supporting dielectric layers. Portions of the base connecting layer exposed on the bottom of the recess are first connection pads, and portions of the base connecting layer exposed on the bottom of the base dielectric layer are bottom connection pads. The active surface of the chip is turned toward the base dielectric layer, and the chip is located on the bottom of the recess. The active surface of the chip is electrically connected to the first connection pads.

Abstract: This disclosure provides a package structure and its fabrication method. The package structure includes: a conductive pattern layer having a bump region and a wiring region, the bump region comprising a plurality of conductive bumps and a first dielectric material surrounding the plurality of conductive bumps, the wiring region comprising a plurality of first conductive wires and a second dielectric material covering and surrounding the plurality of first conductive wires; a circuit device with a plurality of connecting terminals disposed on the bump region, each of the connecting terminals corresponding with one of the conductive bumps; an insulation sealant formed on the second dielectric material and around sidewalls of the circuit device; and a third dielectric material covering the circuit device and the wiring region.

Abstract: An electronic package and a method for fabricating the same are provided. The method includes bonding a portion of an inactive surface of an electronic component to a thermal conductive layer of a heat dissipating element, encapsulating the electronic component and the thermal conductive layer with an encapsulant, and forming a circuit structure on the encapsulant and electrically connecting the circuit structure to the electronic component. Since the heat dissipating element is bonded to the electronic component through the thermal conductive layer, the heat dissipating effect of the electronic package is improved.

Abstract: This disclosure provides a package substrate and its fabrication method. The package substrate comprises: a first dielectric material layer have an opening; a first conductive unit including a first part in the opening of the first dielectric material layer and a second part on the first dielectric material layer; and a second dielectric material layer covering the first conductive unit and the first dielectric material layer; wherein a height of the first conductive unit is larger than a thickness of the first dielectric material layer; wherein a cross-section of the second part is larger than that of the first part in the first conductive unit.

Abstract: The disclosure provides an electronic package including an encapsulating layer, an electronic component embedded in the encapsulating layer, a plurality of conductors disposed through the encapsulating layer, and a circuit layer disposed on the encapsulating layer and electrically connected to the conductors, thereby reducing manufacturing complexity by disposing the conductors through the encapsulating layer to save costs. The disclosure further provides a method for manufacturing the electronic package as described above.

Abstract: An interposer substrate includes a first insulating layer having opposite first and second surfaces; a first wiring layer formed in the first insulating layer, with a surface of the first wiring layer exposed from the first surface; first conductive pillars formed in the first insulating layer; a second wiring layer formed on the second surface; second conductive pillars formed on the second wiring layer; a second insulating layer formed on the second surface and covering the second conductive pillars and the second wiring layer, with end surfaces of the second conductive pillars exposed from the second insulating layer; and immersion tin layers formed on the first wiring layer and the end surfaces of second conductive pillars. The immersion tin layers are used as surface processing layers to be applied to products having ball pads that need to be exposed extensively. A method for fabricating the interposer substrate is also provided.

Abstract: A sensor package includes a sensor, an encapsulation layer, a redistribution layer, a photo-imageable dielectric (PID) layer and via plugs. The encapsulation layer exposes the active surface of the sensor, and the top surface of the encapsulation layer is coplanar with the active surface of the sensor. The redistribution layer covers the top surface of the encapsulation layer and the active surface of the sensor. The PID layer covers the redistribution layer, the encapsulation layer and the active surface of the sensor. The via plugs are disposed around the sensor and through the encapsulation layer. The via plugs are electrically connected to the redistribution layer and the active surface of the sensor. The cross section of the via plug at the top surface of the encapsulation layer has a first hole diameter, and the cross section of the via plug at the bottom surface of the encapsulation layer has a second hole diameter. The first hole diameter is less than the second hole diameter.

Abstract: A sensor package includes a sensor, an encapsulation layer, a redistribution layer, a photo-imageable dielectric (PID) layer and via plugs. The encapsulation layer exposes the active surface of the sensor, and the top surface of the encapsulation layer is coplanar with the active surface of the sensor. The redistribution layer covers the top surface of the encapsulation layer and the active surface of the sensor. The PID layer covers the redistribution layer, the encapsulation layer and the active surface of the sensor. The via plugs are disposed around the sensor and through the encapsulation layer. The via plugs are electrically connected to the redistribution layer and the active surface of the sensor. The cross section of the via plug at the top surface of the encapsulation layer has a first hole diameter, and the cross section of the via plug at the bottom surface of the encapsulation layer has a second hole diameter. The first hole diameter is less than the second hole diameter.

Abstract: The disclosure provides an interposer substrate and a method for manufacturing the same. The method includes forming an insulating protection layer having a phosphorus compound on a substrate body, thereby providing toughness and strength as required when the thickness of the interposer substrate becomes too thin, and preventing substrate warpage when the substrate has a shrinkage stress or structural asymmetries.

Abstract: A method for fabricating bump structures on chips with a panel type process is provided. First, a panel type substrate is provided. Semiconductor chips are fixed on the panel type substrate. Each semiconductor chip includes metal pads and a passivation layer exposing the metal pads. At least an electroless plating process is performed to form under bump metallurgy structures on the metal pads. The method simplifies the processes of forming electrical connections for semiconductor chips. The panel type process can effectively increase the yield, and reduce the manufacturing cost.

Abstract: An electronic package is provided, which includes: an insulator; an electronic element embedded in the insulator and having a sensing area exposed from the insulator; and a conductive structure disposed on the insulator and electrically connected to the electronic element, thereby reducing the thickness of the overall structure.

Abstract: A semiconductor package structure includes a substrate, a chip, bumps, an encapsulation layer and a thermal expansion-matching layer. The chip is located on a top surface of the substrate. The bumps electrically connect the chip and the inner connection pads of the substrate. The encapsulation layer covers the bumps, the chip and the top surface of the substrate. The thermal expansion-matching layer covers the whole top surface of the encapsulation layer, and exposes the side surfaces of the encapsulation layer. The thermal expansion coefficient of the thermal expansion-matching layer is different from that of the encapsulation layer. The side surface of the thermal expansion-matching layer is flush with that of the encapsulation layer. The thermal expansion-matching layer balances the inner stresses caused by the difference of the thermal expansion. Thus, the invention reduces the warpage problem of the formed package.

Abstract: A method of fabricating a package structure is provided, including forming a plurality of openings by removing a portion of the material on one side of a conductive layer, forming an insulating material as an insulating layer in the openings, removing a portion of the material on the other side of the conductive layer to serve as a wiring layer, disposing an electronic component on the wiring layer, and forming an encapsulating layer to cover the electronic component, thereby allowing the single wiring layer to be connected to the electronic component on one side and connected to solder balls on the other side thereof to shorten the signal transmission path. The present invention further provides a package structure thus fabricated.

Abstract: A manufacturing method of a package substrate includes forming a patterned first dielectric layer on a carrier; forming a first wiring layer on a first surface of the first dielectric layer facing away from the carrier, a wall surface facing one of the openings of the first dielectric layer, and the carrier in one of the openings; forming a first conductive pillar layer on the first wiring layer on the first surface; forming a second dielectric layer on the first surface, the first wiring layer, and the openings, wherein the first conductive pillar layer is exposed from the second dielectric layer; forming a second wiring layer on the exposed first conductive pillar layer and the second dielectric layer; forming an electrical pad layer on the second wiring layer; and forming a third dielectric layer on the second dielectric layer and the second wiring layer.

Abstract: The invention provides an interposer substrate and a method of fabricating the same. The method includes: etching a carrier to form a recessed groove thereon; filling a dielectric material in the recessed groove to form a first dielectric material layer, or forming a patterned first dielectric material layer on the carrier; forming a first wiring layer, a first conductive block and a second dielectric material layer on the carrier and the first dielectric material layer sequentially, with the first wiring layer and the first conductive block embedded in the second dielectric material layer; and forming a second wiring layer and a second conductive block on the second dielectric material layer. A coreless interposer substrate having fine pitches is thus fabricated.

Abstract: A method of fabricating a package structure is provided, including forming a plurality of openings by removing a portion of the material on one side of a conductive layer, forming an insulating material as an insulating layer in the openings, removing a portion of the material on the other side of the conductive layer to serve as a wiring layer, disposing an electronic component on the wiring layer, and forming an encapsulating layer to cover the electronic component, thereby allowing the single wiring layer to be connected to the electronic component on one side and connected to solder balls on the other side thereof to shorten the signal transmission path. The present invention further provides a package structure thus fabricated.

Abstract: This disclosure provides a package substrate and its fabrication method. The package substrate includes: a dielectric body; a first circuit device disposed in the dielectric body, the first circuit device comprising a first terminal and a second terminal at a top of the first circuit device; a second circuit device disposed in the dielectric body, the second circuit device comprising a third terminal at a top of the second circuit device; a first conductive pillar formed in the dielectric body and connected to the first terminal; a first bonding wire connecting the second terminal and the third terminal; and a redistribution layer comprising a first conductive wire formed on the dielectric body, the conductive wire connected to the first conductive pillar.