Abstract: The objective of the present invention is to provide a porous ultra-thin polymer film, and a method for producing said porous ultra-thin polymer film. The present invention provides a porous ultra-thin polymer film with a film thickness of 10 nm-1000 nm. In addition, the present invention provides a method for producing a porous ultra-thin polymer film, comprising the steps of: dissolving two types of mutually-immiscible polymers in a first solvent in an arbitrary proportion to obtain a solution; applying the solution onto a substrate and then removing the first solvent from the solution applied onto the substrate to obtain a phase-separated ultra-thin polymer film that has been phase-separated into a sea-island structure; and immersing the ultra-thin polymer film in a second solvent which is a good solvent for the polymer of the island parts but a poor solvent for a polymer other than the island parts to remove the island parts, thereby obtaining a porous ultra-thin polymer film.

Abstract: The present invention relates to a process for the preparation of films of conductive polymers, by the technique so-called roll-to-roll, which allows to obtain freestanding films having advantageous features such as toughness, flexibility, ability to adhere to different substrates, a submicron thickness and a very high ratio surface area/thickness; the present films are suitable for use in several technological applications, in particular for the development of biosensors, and in the production of flexible electronic components with large surface, suitable for wearable devices and also intended for contacting skin.

Abstract: The present invention provides a pharmaceutical preparation comprising a layer-by-layer thin film that is produced by alternately layering a polycation and a polyanion, and a drug loaded onto the layer-by-layer thin film. As a result, a pharmaceutical preparation with a prolonged duration of drug action with a single dose is provided.

Abstract: A polymer film can be adjusted to movement or a fine uneven surface of a living body and has excellent ability to adhere to a biological tissue. The polymer film includes a block copolymer having a structure in which branched polyalkylene glycol and polyhydroxyalkanoic acid are bound to each other, wherein the polymer film has a film thickness of 10 to 1000 nm. The branched polyalkylene glycol has at least three terminal hydroxyl groups per molecule, the mass percentage of the branched polyalkylene glycol relative to the total mass of the block copolymer is 1% to 30%, and a value obtained by dividing the average molecular weight of polyhydroxyalkanoic acid in the block copolymer by X that is the number of terminal hydroxyl groups present per a single molecule of the branched polyalkylene glycol is 10000 to 30000.

Abstract: A semiconductor device includes: a first field-effect transistor of a first conductivity type formed on a first active region of a semiconductor substrate. The first field-effect transistor includes a first gate insulating film formed on the first active region, and a first gate electrode formed on the first gate insulating film. The first gate electrode includes a first metal electrode formed on the first gate insulating film, a first interface layer formed on the first metal electrode, and a first silicon electrode formed on the first interface layer.

Abstract: The objective of the present invention is to provide a porous ultra-thin polymer film, and a method for producing said porous ultra-thin polymer film. The present invention provides a porous ultra-thin polymer film with a film thickness of 10 nm-1000 nm. In addition, the present invention provides a method for producing a porous ultra-thin polymer film, comprising the steps of: dissolving two types of mutually-immiscible polymers in a first solvent in an arbitrary proportion to obtain a solution; applying the solution onto a substrate and then removing the first solvent from the solution applied onto the substrate to obtain a phase-separated ultra-thin polymer film that has been phase-separated into a sea-island structure; and immersing the ultra-thin polymer film in a second solvent which is a good solvent for the polymer of the island parts but a poor solvent for a polymer other than the island parts to remove the island parts, thereby obtaining a porous ultra-thin polymer film.

Abstract: The present invention pertains to a bone marrow-directing drug delivery material that includes at least one fine particle, wherein the fine particle includes an anionic moiety on a surface of the particle. Also disclosed are uses of the material set forth herein for the prevention, treatment, or diagnosis of a disease of bone, cartilage, bone marrow, or a joint. Also disclosed are methods of preventing, treating, or diagnosing a disease of bone, cartilage, bone marrow, or a joint in a subject, involving administering to the subject a pharmaceutically effective amount of the material of the present invention.

Abstract: The present invention provides pH-responsive liposomes which are capable of holding a desired substance in an acidic pH environment and releasing the desired substance in a basic pH environment. The present invention uses pH-responsive liposomes comprising, as constituent lipids thereof, a cationic amphiphilic molecule and at least one of an anionic amphiphilic molecule and a twitterionic amphiphilic molecule, wherein the liposomes, when dispersed in an aqueous medium, have a positive zeta potential in an acidic environment where the dispersion has a pH of less than 6.5 and have a negative zeta potential in a basic environment where the dispersion has a pH of 8.5 or more.

Abstract: A thin film polymer structure having a functional substance on the face (A surface) and reverse face (B surface) of the film, obtained by the steps of: (a) causing polyfunctional molecules to adsorb to an area of an arbitrary shape in an interface between a substrate body and a liquid phase; (b) polymerizing and/or crosslinking the adsorbing polyfunctional molecules to form a polymer thin film; (c) bonding a functional substance to the A surface of the formed thin film and then (d) forming a soluble support film thereon; exfoliating the thin film and the soluble support film from the substrate body; (e) bonding to the B surface of the thin film a functional substance identical to or different from the abovementioned functional substance and then dissolving the soluble support film with a solvent. A method for preparing a thin film molecular structure having a functional substance on the face (A surface) and reverse face (B surface) of the film is offered through the above process.

Abstract: The present invention provides a thin film having an excellent manageability, moisture-retaining effect, and unevenness correction effect and a thin film cosmetic. The thin film of the present invention is a laminate of (a) a base film supporting hyaluronic acid or a derivative thereof and (b) a carrier, wherein the thickness of film (a) is 10 to 500 nm.

Abstract: The present invention provides a pharmaceutical preparation comprising a layer-by-layer thin film that is produced by alternately layering a polycation and a polyanion, and a drug loaded onto the layer-by-layer thin film. As a result, a pharmaceutical preparation with a prolonged duration of drug action with a single dose is provided.

Abstract: The present invention has an object of providing a drug carrier capable of controlling in vivo pharmacokinetics. The present invention is directed to a drug carrier comprising a molecular assembly having a drug incorporated therein, and the above object can be achieved by a part of the amphiphilic molecules included in the molecular assembly being released from the molecular assembly by an external environmental change. The present invention utilizes a phenomenon that the hydrophilic-hydrophobic balance of the amphiphilic molecules is shifted toward hydrophilicity by an external environmental change and thus the amphiphilic molecules are freed from the molecular assembly.

Abstract: A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.

Abstract: A gate insulating film includes an oxygen-containing insulating film and a high dielectric constant insulating film formed on the oxygen-containing insulating film and containing a first metal. The high dielectric constant insulating film further includes a second metal different from the first metal. Part of the high dielectric constant insulating film having the maximum composition ratio of the second metal is away from an interface between the high dielectric constant insulating film and the oxygen-containing insulating film and an interface between the high dielectric constant insulating film and the gate electrode. The second metal exists also in a portion of the oxygen-containing insulating film near the interface between the high dielectric constant insulating film and the oxygen-containing insulating film.

Abstract: The present invention provides a reagent for introducing a protein or gene into a cell. The reagent of the present invention is, for example, a reagent for introducing a protein or gene into a cell, which comprises a composition comprising a cationic amino acid type lipid represented by the following formula (I)-1: (wherein in formula (I)-1: L is a single bond, —CONH—, or —S—S—; M1 is —(CH2)k— or —(CH2CH2O)k— (wherein k is an integer between 0 and 14); and m1 and m2 are each independently an integer between 11 and 21 (in this regard, when providing a reagent for introducing a gene into a cell, the case where both m1 and m2 are 15 is excluded)).

Abstract: A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.

Abstract: A semiconductor device including a SRAM section and a logic circuit section includes: a first n-type MIS transistor including a first n-type gate electrode formed with a first gate insulating film interposed on a first element formation region of a semiconductor substrate in the SRAM section; and a second n-type MIS transistor including a second n-type gate electrode formed with a second gate insulating film interposed on a second element formation region of the semiconductor substrate in the logic circuit section. A first impurity concentration of a first n-type impurity in the first n-type gate electrode is lower than a second impurity concentration of a second n-type impurity in the second n-type gate electrode.

Abstract: A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.

Abstract: A semiconductor device includes a first MISFET and a second MISFET, wherein the first MISFET includes a semiconductor substrate 100, a first gate insulating film 101a and a first gate electrode 102a formed on the first region of the semiconductor substrate, and first side walls (103a, 120a) formed on the side surface of the first gate electrode 102a, and the second MISFET includes a second gate insulating film 101b and a second gate electrode 102b formed on the second region of the semiconductor substrate 100, and second side walls (103b, 120b) formed on the side surface of the second gate electrode 102b. The width of the first side wall is smaller than the width of the second side wall, and the second side wall includes the second spacer 103b containing a higher concentration of hydrogen than the first spacer 103a.

Abstract: The present invention provides an amphiphilic molecule having a plurality of zwitterionic functional groups in its hydrophilic moiety and a molecular assembly comprising the amphiphilic molecule as a constituent lipid. The molecular assembly of the present invention forms a stable vesicular structure under a physiological pH environment to carry a substance of interest in the vesicular structure, and can release the substance of interest to the outside of the vesicular structure when it is deformed under an acidic pH environment. The molecular assembly of the present invention can be used as a carrier for a drug, a probe, a nucleic acid, a protein or the like.