Abstract: The present invention pertains to a bone marrow-directing drug delivery material that includes at least one fine particle, wherein the fine particle includes an anionic moiety on a surface of the particle. Also disclosed are uses of the material set forth herein for the prevention, treatment, or diagnosis of a disease of bone, cartilage, bone marrow, or a joint. Also disclosed are methods of preventing, treating, or diagnosing a disease of bone, cartilage, bone marrow, or a joint in a subject, involving administering to the subject a pharmaceutically effective amount of the material of the present invention.

Abstract: It is an object of the present invention to provide an enzyme preparation which is excellent in stability in blood (blood residence) and in transfer to a target organ (targeting property), and can be used effectively in enzyme replacement therapy or the like. This problem is solved by a lipid vesicle composition wherein vesicles composed of a lipid bilayer membrane are encapsulating an enzyme, the composition being capable of retaining stably the activity of the enzyme even outside the stable pH range of the enzyme.

Abstract: A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.

Abstract: A semiconductor device including a SRAM section and a logic circuit section includes: a first n-type MIS transistor including a first n-type gate electrode formed with a first gate insulating film interposed on a first element formation region of a semiconductor substrate in the SRAM section; and a second n-type MIS transistor including a second n-type gate electrode formed with a second gate insulating film interposed on a second element formation region of the semiconductor substrate in the logic circuit section. A first impurity concentration of a first n-type impurity in the first n-type gate electrode is lower than a second impurity concentration of a second n-type impurity in the second n-type gate electrode.

Abstract: The present invention provides a drug delivery material, which is a conjugate of 1) a drug-carrying molecular assembly, 2) a linker and 3) a substance that recognizes activated platelet, injury site of blood vessel and/or inflammatory tissue, and capable of efficiently delivering a drug to a desired site, during which the drug under delivery does not affect sites other than a desired site (hence, low possibility of causing side effects), which releases the drug only at the desired site without requiring an external means and allows the drug to exhibit an effect.

Abstract: A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.

Abstract: The present invention has an object of providing a drug carrier capable of controlling in vivo pharmacokinetics. The present invention is directed to a drug carrier comprising a molecular assembly having a drug incorporated therein, and the above object can be achieved by a part of the amphiphilic molecules included in the molecular assembly being released from the molecular assembly by an external environmental change. The present invention utilizes a phenomenon that the hydrophilic-hydrophobic balance of the amphiphilic molecules is shifted toward hydrophilicity by an external environmental change and thus the amphiphilic molecules are freed from the molecular assembly.

Abstract: The present invention provides a novel complex lipid having a cationic functional group derived from an amino acid. Namely, the present invention provides a cationic acid amino acid type lipid represented by the following formula: wherein, R1 is a hydrocarbon group having a cationic functional group derived from an amino acid, R2 and R3 are each independently a chain hydrocarbon group, A1 and A2 are each independently a linkage group selected from the group consisting of —COO—, —OCO—, —CONH— and NHCO—, and n is an integer of 2 to 4.

Abstract: A semiconductor device includes: a semiconductor substrate formed with an active region and an isolation region and having a trench formed in the isolation region; an isolation insulating film embedded in the trench of the semiconductor substrate; and semiconductor nanocrystals buried in the isolation insulating film. The coefficient of linear expansion of the semiconductor nanocrystal is closer to that of the semiconductor substrate rather than that of the isolation insulating film, so that stress applied to the active region after a thermal treatment or the like is reduced.

Abstract: A pharmaceutical composition containing an artificial oxygen carrier, which has high oxygen carrying efficiency; and has a required colloid osmotic pressure, an appropriate crystalloid osmotic pressure, pH, and electrolyte balance. The composition is prepared by appropriately adding at least one substance selected from the group consisting of a compound capable of providing a colloid osmotic pressure, an electrolyte, a saccharide, an amino acid, an antioxidant, a pH adjuster, and an isotonizing agent to a preparation including a liposome-encapsulated hemoglobin in which a hemoglobin is encapsulated in a liposome or to a preparation including a conjugate of a porphyrin-iron complex and albumin.

Abstract: A first MIS transistor includes: a first gate insulating film formed on a first active region; a first gate electrode formed on the first gate insulating film; first sidewall insulating films formed on side surfaces of the first gate electrode; first source/drain regions formed at outer sides of the first sidewall insulating film in the first active region; a silicide region formed as an upper layer of each of the first source/drain regions; a first underlying insulating film formed over the first active region using ALD so as to cover the first gate electrode, the first insulating films and the silicide region; and a first contact liner film formed on the first underlying insulating film using plasma CVD and made of a stress insulating film for applying a tensile or compressive stress in a gate length direction in a channel region.

Abstract: In a semiconductor device, a first p-type MIS transistor includes: a first gate insulating film formed on a first active region; a first gate electrode formed on the first gate insulating film; a first side-wall insulating film; a first p-type source/drain region; a first contact liner film formed over the first active region; a first interlayer insulating film formed on the first contact liner film; and a first contact plug formed to reach the top surface of the first source/drain region. The first contact liner film has a slit extending, around a corner at which the side surface of the first side-wall insulating film intersects the top surface of the first active region, from the top surface of the first contact liner film toward the corner.

Abstract: A first NMIS transistor includes: a first gate dielectric film over the first active region; a first gate electrode on the first gate dielectric film; a first side-wall dielectric film on side surfaces of the first gate dielectric film and the first gate electrode; a first source/drain region in the first active region outside the first side-wall dielectric film; a first silicide layer in a top-layer portion of the first source/drain region; a second side-wall dielectric film on the first silicide layer around a corner at which the side surface of the first side-wall dielectric film meets an upper surface of the first silicide layer; and a first stressor film for exerting a tensile stress on a channel region in a gate length direction, the first stressor film covering the first gate electrode, the first side-wall dielectric film, and the second side-wall dielectric film.

Abstract: An n-channel MOS transistor and a p-channel MOS transistor are formed on a semiconductor substrate 100. The p-channel MOS transistor includes a gate electrode 102a, a first offset sidewall 103a formed on side surfaces of the gate electrode 102a so as to contain fine particles 110 of group IV semiconductor therein. The n-channel MOS transistor includes a gate electrode 102b and a second offset sidewall 103b formed on side surfaces of the gate electrode 102b. After ion implantation of group IV semiconductor, heat treatment is performed to form the fine particles 110, so that a thickness of the first offset sidewall 103a can be made larger than a thickness of the second offset sidewall 103b.

Abstract: The present invention provides a carrier that accumulates on a damaged tissue and that functions as a drug for controlling a platelet function, a drug delivery method using the carrier and a pharmaceutical composition comprising the carrier. The present invention also provides a carrier with a non-cationic surface, a drug transporter and a pharmaceutical composition comprising the carrier.

Abstract: A semiconductor device including a SRAM section and a logic circuit section includes: a first n-type MIS transistor including a first n-type gate electrode formed with a first gate insulating film interposed on a first element formation region of a semiconductor substrate in the SRAM section; and a second n-type MIS transistor including a second n-type gate electrode formed with a second gate insulating film interposed on a second element formation region of the semiconductor substrate in the logic circuit section. A first impurity concentration of a first n-type impurity in the first n-type gate electrode is lower than a second impurity concentration of a second n-type impurity in the second n-type gate electrode.

Abstract: The present invention provides a method of producing a complex of albumin and a deoxy form metal complex having a porphyrin structure, which includes mixing albumin and a metal complex having a porphyrin structure under a gas atmosphere substantially free of carbon monoxide and oxygen, as a method of producing an artificial oxygen carrier containing a complex of albumin and a metal complex having a porphyrin structure, under a deoxidation (nitrogen, other inert gases) atmosphere without using carbon monoxide.

Abstract: A high dielectric constant gate insulating film is formed on an active region of a substrate, and a gate electrode is formed on the high dielectric constant gate insulating film. A high dielectric constant insulating sidewall is formed on a side face of the gate electrode.

Abstract: After a Ni film is deposited on a substrate on which a gate silicon layer is formed, a mask is formed above the gate silicon layer. Then, the Ni film is etched so as to leave a part of the Ni film which is located on the gate silicon layer. This restricts sideways supply of Ni present on the sides of the gate silicon layer. Thereafter, thermal treatment is performed to silicidate the gate silicon layer entirely.

Abstract: The present invention provides a method for purifying hemoglobin from red blood cells, wherein the red blood cells are deep-frozen and preserved, and then purified.