Abstract: A method for preparing a vesicle dispersion wherein a water-soluble substance is encupsulated in the vesicle, which comprises successively performing: a step of dispersing at least one lipid in an aqueous medium to pre-construct a vesicle dispersion, a step of drying the pre-constructed vesicles to obtain dried vesicles, a step of re-dispersing the dried vesicles in an aqueous solution of the water-soluble substance, and a step of passing the resultant vesicle dispersion through a filter. The method enables the efficient and simple preparation of safe vesicles with a useful substance in high concentration encupsulated therein, with a narrow size distribution, in high yield.

Abstract: A semiconductor device includes: a semiconductor substrate formed with an active region and an isolation region and having a trench formed in the isolation region; an isolation insulating film embedded in the trench of the semiconductor substrate; and semiconductor nanocrystals buried in the isolation insulating film. The coefficient of linear expansion of the semiconductor nanocrystal is closer to that of the semiconductor substrate rather than that of the isolation insulating film, so that stress applied to the active region after a thermal treatment or the like is reduced.

Abstract: A MIS transistor includes a gate electrode portion, insulating sidewalls formed on side surfaces of the gate electrode portion, source/drain regions and a stress film formed so as to cover the gate electrode portion and the source/drain regions. A height of an upper surface of the gate electrode portion is smaller than a height of an upper edge of each of the insulating sidewalls. A thickness of first part of the stress film located on the gate electrode portion is larger than a thickness of second part of the stress film located on the source/drain regions.

Abstract: A semiconductor device includes: an isolation region formed in a semiconductor substrate; an active region surrounded by the isolation region in the semiconductor substrate; a gate insulating film formed on the active region; and a gate electrode formed across the boundary between the active region and the isolation region adjacent to the active region. The gate electrode includes a first portion which is located above the active region with the gate insulating film interposed therebetween and is entirely made of a silicide in a thickness direction and a second portion which is located above the isolation region and is made of a silicon region and the silicide region covering the silicon region.

Abstract: A semiconductor device includes: a first element region and a second element region formed on a substrate to be adjacent to each other with an isolation region interposed therebetween; a first gate insulating film formed on the first element region; a second gate insulating film formed on the second element region; and a gate electrode continuously formed on the first gate insulating film, the isolation region and the second gate insulating film. The gate electrode includes a first silicided region formed to come into contact with the first gate insulating film, a second silicided region which is formed to come into contact with the second gate insulating film and is of a different composition from the first silicided region, and a conductive anti-diffusion region composed of a non-silicided region formed in a part of the gate electrode located on the isolation region and between the first element region and the second element region.

Abstract: A platelet substitute which does not induce formation of unnecessary thrombi and intravascular coagulation of blood, by causing aggregation of resting platelets in the blood vessel, and has a specific aggregation action is provided. It was found as a result that a peptide conjugate, in which a synthesized form of a dodecapeptide contained in the GPIIb/IIIa recognizing site of fibrinogen is bound to a micro particle, has a property to bind specifically to only substantially activated GPIIb/IIIa, which is preferable as a platelet substitute, thereby accomplishing the present invention.

Abstract: A Ni film is deposited over the entire surface of a substrate including a silicon gate. Then, the silicon gate is partially removed by, for example, CMP, thereby leaving a Ni layer having a flat upper surface and a uniform thickness directly on the silicon gate. Subsequently, silicidation is performed, thereby forming a gate electrode having a uniform silicide phase.

Abstract: In a Cu interconnect process, an organic-based low-dielectric-constant interlayer film is formed, and then a protective film is deposited on the side and back surfaces of a wafer bevel and the back surface of a wafer edge. Thereafter, a lithography process and an etching process are carried out, a copper film is formed, and then the protective film is removed.

Abstract: A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.

Abstract: The present invention provides an agent containing L-tyrosine that prevents methemoglobin formation, and a vesicle comprising the above agent for preventing methemoglobin formation. More specifically, the present invention provides an oxygen infusion preparation suitable for long-term storage, which prevents an increase in methemoglobin content as a result of oxidation of hemoglobin or the like encapsulated in an vesicle having a lipid bilayer membrane structure.

Abstract: An oxygen carrier system includes an artificial oxygen carrier including hemoglobin vesicles encapsulating hemoglobin and an intermediate electron mediator having a standard electrode potential of 0.05 V to 0.56 V (vs. the standard hydrogen electrode) in the vesicles, and a reducing agent which is added to an external aqueous phase of the hemoglobin vesicle to reduce methemoglobin when the hemoglobin encapsulated in the hemoglobin vesicle is oxidized to the methemoglobin. The reducing agent has, as an active component, at least one compound selected from the group consisting of a thiol compound and a reducing sugar.

Abstract: Provided is a zwitterionic lipid compound represented by formula (I) given below: In formula (I), m and n are independently integers of 1 to 4, p is an integer of 7 to 21, one R is NH3+, and each other R is H.

Abstract: As a negatively charged lipid that can stably add negative charges to the surface of vesicles without side effects, the carboxyl acid-type lipid of the following general formula [1]: [wherein R1, R2 and R3 represent substituents of which one is represented by the following general formula [X]: (wherein M is a hydrogen atom or monovalent cation, and m is an integer of 1 to 5 that represents the methylene chain length), and the other two are chained hydrocarbon groups; A1, A2 and A3 are the same or different substituents selected from the group consisting of C(O)O, CONH or NHCO; and n is an integer of 1 to 3 that represents the methylene chain length) is provided.

Abstract: An amphiphilic compound having a dendritic branch structure represented by general formula (I): In the formula (I), R0 is a hydrophilic group; R1 and R2 are independently a hydrophobic group; and n is an integer of 1 to 4. This amphiphilic compound is capable of stably fixing a water-soluble polymer onto a surface structure by taking advantage of intermolecular interaction, thereby enabling the water-soluble polymer to be carried thereon without giving any damage to the function thereof.

Abstract: A method and an apparatus for regenerating an oxygen-binding ability by reducing the methemoglobin contained in hemoglobin-vesicle by light irradiation. This method includes adding electron donors such as amino acids, saccharides, alcohols, and/or flavin derivatives in appropriate amounts to the inner aqueous phase of the hemoglobin-vesicle, applying light to the vesicle when the content of methemoglobin increases as a result of oxidation of hemoglobin, thereby reducing the metohemoglobin. In this manner, the oxygen-binding ability is recovered, thereby maintaining the function of the hemoglobin-vesicle.

Abstract: The present invention provides a method of producing a complex of albumin and a deoxy form metal complex having a porphyrin structure, which includes mixing albumin and a metal complex having a porphyrin structure under a gas atmosphere substantially free of carbon monoxide and oxygen, as a method of producing an artificial oxygen carrier containing a complex of albumin and a metal complex having a porphyrin structure, under a deoxidation (nitrogen, other inert gases) atmosphere without using carbon monoxide.

Abstract: The present invention provides a method for preserving an oxygen infusion containing an aqueous suspension of molecular assemblies which contain hemoglobin or a heme compound, by: a) modifying the molecular assemblies with polyoxyethylene; and b) converting the hemoglobin or the heme compound into a deoxy-form by removing oxygen from the suspension.

Abstract: An oxygen carrier system includes an artificial oxygen carrier including hemoglobin vesicles encapsulating hemoglobin and an intermediate electron mediator having a standard electrode potential of 0.05 V to 0.56 V (vs. the standard hydrogen electrode) in the vesicles, and a reducing agent which is added to an external aqueous phase of the hemoglobin vesicle to reduce methemoglobin when the hemoglobin encapsulated in the hemoglobin vesicle is oxidized to the methemoglobin. The reducing agent has, as an active component, at least one compound selected from the group consisting of a thiol compound and a reducing sugar.

Abstract: A pharmaceutical composition containing an artificial oxygen carrier, which has high oxygen carrying efficiency; and has a required colloid osmotic pressure, an appropriate crystalloid osmotic pressure, pH, and electrolyte balance. The composition is prepared by appropriately adding at least one substance selected from the group consisting of a compound capable of providing a colloid osmotic pressure, an electrolyte, a saccharide, an amino acid, an antioxidant, a pH adjuster, and an isotonizing agent to a preparation including a hemoglobin-encapsulated liposome in which a hemoglobin is encapsulated in a liposome or to a preparation including a conjugate of a porphyrin-iron complex and albumin.

Abstract: Provided is a zwitterionic lipid compound represented by formula (I) given below: 1