Abstract: There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si.

Abstract: This thin film transistor comprises, on a substrate, at least a gate electrode, a gate insulating film, an oxide semiconductor layer, a source-drain electrode, and two or more protective films. The oxide semiconductor layer comprises Sn, O and one or more elements selected from the group consisting of In, Ga and Zn. In addition, the two or more protective films are composed of at least a first protective film that is in contact with the oxide semiconductor film, and one or more second protective films other than the first protective film. The first protective film is a SiOx film having a hydrogen concentration of 3.5 atomic % or lower.

Abstract: Provided is a thin film transistor having an oxide semiconductor layer that has high mobility, excellent stress resistance, and good wet etching property. The thin film transistor comprises at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate comprising a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IGZO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; In: 25% or less (excluding 0%); Ga: 5% or more; Zn: 30.0 to 60.0%; and Sn: 8 to 30%.

Abstract: An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.

Abstract: The interconnect structure of the present invention includes at least a gate insulator layer and an oxide semiconductor layer on a substrate, wherein the oxide semiconductor layer is a layered product having a first oxide semiconductor layer containing at least one element (Z group element) selected from the group consisting of In, Ga, Zn and Sn; and a second oxide semiconductor layer containing at least one element (X group element) selected from the group consisting of In, Ga, Zn and Sn and at least one element (Y group element) selected from the group consisting of Al, Si, Ti, Hf, Ta, Ge, W and Ni, and wherein the second oxide semiconductor layer is interposed between the first oxide semiconductor layer and the gate insulator layer.

Abstract: Provided is a back-channel etch (BCE) thin-film transistor (TFT) without an etch stopper layer, wherein an oxide semiconductor layer of the TFT has excellent resistance to an acid etchant used when forming a source-drain electrode, and has excellent stress stability. The TFT comprises a gate electrode, a gate insulator film, an oxide semiconductor layer, a source-drain electrode, and a passivation film which protects the source-drain electrode, on a substrate. The oxide semiconductor layer comprises one or more elements selected from a group consisting tin, indium, gallium and zinc; and oxygen; and a value in a cross-section in the lamination direction of the TFT, as determined by [100×(the thickness of the oxide semiconductor layer directly below a source-drain electrode end?the thickness in the center portion of the semiconductor layer)/the thickness of the semiconductor layer directly below the source-drain electrode end], is not more than 5%.

Abstract: This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])??0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])?2.28×[Zn]/([Zn]+[Sn])?2.01 (2) [In]/([In]+[Zn]+[Sn])?1.1×[Zn]/([Zn]+[Sn])?0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

Abstract: Provided is a back-channel etch type thin-film transistor (TFT) without an etch stopper layer, wherein an oxide semiconductor of the TFT has excellent resistance to an acid etchant and stress stability. The oxide semiconductor layer is a laminate having a first layer comprising tin, indium, and gallium or zinc, and oxygen, and a second layer comprising one or more elements selected from a group consisting indium, zinc, tin and gallium; and oxygen. The TFT is formed, in the following order, a gate insulator film, the second semiconductor layer and the first semiconductor layer; and having a value in a cross section in the lamination direction of the TFT, as determined by [100×(the first layer thickness of directly below a source-drain electrode end?a center portion thickness of the first layer)/the first layer thickness of directly below the source-drain electrode end], of not more than 5%.

Abstract: A thin film transistor containing at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate containing a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 8% or more and 30% or less; In: 25% or less, excluding 0%; Zn: 35% or more to 65% or less; and Sn: 5% or more to 30% or less.

Abstract: The sizes required for maintenance are reduced and an occupying floor area is reduced. The substrate processing apparatus contains a load lock chamber 41 and a transfer chamber 24 respectively provided in order from the rear side within a case 11; and a processing chamber 53 provided above the load lock chamber 41 for processing wafers 1. An opening section 27A, and an opening and closing means 28A for opening and closing the opening section 27A are respectively provided in a location at the rear side of the transfer chamber 24 where the load lock chamber 41 is not arranged.

Abstract: Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.

Abstract: Provided is a thin film transistor comprising an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with: a gate electrode; two or more oxide semiconductor layers that are used as a channel layer; an etch stopper layer for protecting the surfaces of the oxide semiconductor layers; a source-drain electrode; and a gate insulator film interposed between the gate electrode and the channel layer. The metal elements constituting an oxide semiconductor layer that is in direct contact with the gate insulator film are In, Zn and Sn. The hydrogen concentration in the gate insulator film, which is in direct contact with the oxide semiconductor layer, is controlled to 4 atomic % or less.

Abstract: A thin film transistor includes a gate electrode, a channel overlapped with the gate electrode, a source electrode contacting the channel, and a drain electrode spaced apart from the source electrode and contacting the channel. The channel includes indium-zinc-tin oxide sourced from a source including a single phase indium-zinc-tin oxide.

Abstract: There is provided an electronic device including a first member formed to include at least a part of a substrate material, a second member formed to include at least a part of the substrate material and configured to be relatively movable with respect to the first member, and a fuse configured to include at least a part of the substrate material and configured to electrically connect the first member to the second member via the substrate material.

Abstract: Provided is a thin film transistor comprising an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with: a gate electrode; an oxide semiconductor layer that is used as a channel layer; and a gate insulator film that is arranged between the gate electrode and the channel layer. The oxide semiconductor layer is configured of at least one metal element that is selected from the group consisting of In, Ga, Zn and Sn (excluding the cases where the oxide semiconductor layer is constituted of metal elements Sn, and at least one of In and Zn). The hydrogen concentration in the gate insulator film, which is in direct contact with the oxide semiconductor layer, is controlled to 4 atomic % or less.

Abstract: A waveguide includes: a waveguide portion including a first surface and a second surface that are opposed to each other; a first transmission line provided on the first surface of the waveguide portion; a second transmission line provided on the second surface of the waveguide portion; and a first conversion structure inputting a signal from the first transmission line to the waveguide portion and converting the signal.

Abstract: A signal transmission cable includes a multi-layer parallel transmission path, a single-layer parallel transmission path, and a single-layer/multi-layer conversion section. The multi-layer parallel transmission path includes two or more dielectric waveguides stacked in upper and lower directions. Each dielectric waveguide includes a dielectric layer formed of a dielectric substance, two conductive layers formed to sandwich the dielectric layer, and two quasi-conductive walls. The two quasi-conductive walls include a plurality of via-holes electrically connected to the two conductive layers. The dielectric waveguides are arranged sharing the conductive layers in contact in the upper and lower directions. The single-layer parallel transmission path includes the two or more dielectric waveguides arranged in left- and right-hand directions on the same dielectric layer and conductive layer.

Abstract: Provided is a thin film transistor having an oxide semiconductor layer that has high mobility, excellent stress resistance, and good wet etching property. The thin film transistor comprises at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate comprising a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 5% or more; In: 25% or less (excluding 0%); Zn: 35 to 65%; and Sn: 8 to 30%.

Abstract: Provided is an oxide-semiconductor-based thin film transistor having satisfactory switching characteristics and stress resistance. Change in threshold voltage through stress application is suppressed in the thin film transistor. The thin film transistor of excellent stability comprises a substrate and, formed thereon, at least a gate electrode, a gate insulating film, oxide semiconductor layers, a source-drain electrode, and a passivation film for protecting the gate insulating film, and oxide semiconductor layers, wherein the oxide semiconductor layers are laminated layers comprising a second oxide semiconductor layer consisting of In, Zn, Sn, and O and a first oxide semiconductor layer consisting of In, Ga, Zn, and O. The second oxide semiconductor layer is formed on the gate insulating film. The first oxide semiconductor layer is interposed between the second oxide semiconductor layer and the passivation film.