Abstract: A semiconductor package includes a semiconductor substrate and an electrode pad formed on the semiconductor substrate. The electrode pad includes a central portion and a peripheral portion, and a first pattern is located on the peripheral portion. A passivation layer is formed on the semiconductor substrate and the electrode pad. The passivation layer has an opening exposing the central portion of the electrode pad and a second pattern located on the first pattern. A seed layer is formed on the electrode pad and the passivation layer. The seed layer has a third pattern formed on the second pattern. A bump is formed on the seed layer and electrically connected to the electrode pad. An undercut is formed around the third pattern located under an edge of a lower portion of the bump.

Abstract: Disclosed is a method of driving a display device that includes, for example, generating a gate control signal, a data control signal and an image data using an image signal; generating a data voltage using the data control signal and the image data; generating a gate voltage using the gate control signal; and sequentially applying the gate voltage of a high level to q groups of the plurality of gate lines during q frames, respectively, where q is an integer greater than 1.

Abstract: Disclosed herein are structure and method for connecting a fabric sensor and a digital yarn. The structure includes a sheet-type member which is configured to be worn on a body of a wearer, a first fabric sensor which is provided on the sheet-type member and senses a biological signal, a digital yarn which is provided on the first fabric sensor and has a peeled portion that is electrically connected to the first fabric sensor, a sewing yarn which couples a portion of the digital yarn to the first fabric sensor by sewing, and a second fabric sensor which is coupled to the first fabric sensor and covers an upper portion of the peeled portion.

Abstract: A semiconductor chip including through silicon vias (TSVs), wherein the TSVs may be prevented from bending and the method of fabricating the semiconductor chip may be simplified, and a method of fabricating the semiconductor chip. The semiconductor chip includes a silicon substrate having a first surface and a second surface; a plurality of TSVs which penetrate the silicon substrate and protrude above the second surface of the silicon substrate; a polymer pattern layer which is formed on the second surface of the silicon substrate, surrounds side surfaces of the protruding portion of each of the TSVs, and comprises a flat first portion and a second portion protruding above the first portion; and a plated pad which is formed on the polymer pattern layer and covers a portion of each of the TSVs exposed from the polymer pattern layer.

Abstract: A liquid crystal display (LCD) device are disclosed, which reduce power consumption and improve an image quality. The LCD device includes a liquid crystal panel in which a plurality of sub-pixels is defined by intersection of a plurality of gate lines and a plurality of data lines, and sub-pixels adjacent to each other in a column direction are connected by sharing the plurality of gate lines. A gate driver may sequentially transfer a scan pulse to even-numbered gate lines and then sequentially transferring a scan pulse to odd-numbered gate lines. A data driver may be synchronized with the applied scan pulse in providing data voltage to columns of sub-pixels. The data driver provides the data voltage having different polarities to a neighbor data line during one frame interval such that sub-pixels are driven by a horizontal 2-dot inversion scheme.

Abstract: Provided is a method of manufacturing a porous protective layer for a gas sensor. The porous protective layer according to one Example of the present invention is manufactured by a method of manufacturing a porous protective layer for a gas sensor including (1) a step of introducing a composition for forming a porous protective layer including a pore former and a ceramic powder, which includes particles having a degree of deformation of 1.5 or more expressed by the following Relational Formula 1 according to the present invention, onto a sensing electrode for a gas sensor, and (2) a step of sintering the introduced composition for forming a porous protective layer.

Abstract: Provided is a flat plate-type oxygen sensor element. The flat plate-type oxygen sensor element according to an exemplary embodiment of the present invention includes: a first electrolyte layer having a sensing electrode exposed to a target gas; a second electrolyte layer on which a reference electrode is disposed; and a heating unit having a heating resistor surrounded by an insulating layer and disposed between the sensing electrode and the reference electrode, wherein the heating unit is disposed so that the heating resistor is located at a position ranging from 40 to 60% of a total height from an upper surface of the first electrolyte layer to a lower surface of the second electrolyte layer.

Abstract: An electronic device is provided. The electronic device includes a case member that includes an opening, an electric component provided on the case member, and a circuit board connected to the electric component via the opening, wherein a portion of the circuit board contacts the case member to seal the opening.

Abstract: A semiconductor chip including through silicon vias (TSVs), wherein the TSVs may be prevented from bending and the method of fabricating the semiconductor chip may be simplified, and a method of fabricating the semiconductor chip. The semiconductor chip includes a silicon substrate having a first surface and a second surface; a plurality of TSVs which penetrate the silicon substrate and protrude above the second surface of the silicon substrate; a polymer pattern layer which is formed on the second surface of the silicon substrate, surrounds side surfaces of the protruding portion of each of the TSVs, and comprises a flat first portion and a second portion protruding above the first portion; and a plated pad which is formed on the polymer pattern layer and covers a portion of each of the TSVs exposed from the polymer pattern layer.

Abstract: In touch panel display device, a first touch electrode group has a first plurality of touch electrodes and a second touch electrode group has a second plurality of touch electrodes. A first current supplier circuit supplies a first current during a first current supply period to the first touch electrode group, and the second current supplier circuit supplies a second current during a second current supply period to the second touch electrode group. The sensing signal receiver circuit holds a first touch voltage for the first touch electrode group following the first current supply period, and holds the second touch voltage for the second touch electrode group following the second current supply period. The sensing signal receiver determines based on the first held touch voltage and the second held touch voltage, whether a touch occurred in each of the first touch electrode group and the second touch electrode group.

Abstract: A method of operating a data storage device includes generating at least one pseudo noise (PN) sequence using logical information and physical information for the data storage device. The method also includes converting first data into second data using the at least one PN sequence. The logical information may be a logical address for the data storage device, and the physical information may be a physical address for the data storage device.

Abstract: A method may include providing a first semiconductor chip and a first insulating layer surrounding lateral sides of the first semiconductor chip; providing a second semiconductor chip and a second insulating layer surrounding lateral sides of the second semiconductor chip; providing a third insulating layer below the first semiconductor chip and first insulating layer, so that the first semiconductor chip is between the third insulating layer and the second semiconductor chip, the third insulating layer forming a package substrate; providing a plurality of external connection terminals on the third insulating layer, such that the third insulating layer has a first surface facing the first semiconductor chip and a second surface facing the external connection terminals; providing a first redistribution line on the first surface of the third insulating layer and extending horizontally along the first surface of the third insulating layer, the first redistribution line contacting a first conductive pad of the fi

Abstract: The present invention provides content providing apparatus and method and a content providing system which maintains a compatibility with an IP network and deliver a content with a complete distributed architecture excluding the content synchronizing process and the request routing process which delivers the content.

Abstract: A semiconductor package includes a semiconductor substrate and an electrode pad formed on the semiconductor substrate. The electrode pad includes a central portion and a peripheral portion, and a first pattern is located on the peripheral portion. A passivation layer is formed on the semiconductor substrate and the electrode pad. The passivation layer has an opening exposing the central portion of the electrode pad and a second pattern located on the first pattern. A seed layer is formed on the electrode pad and the passivation layer. The seed layer has a third pattern formed on the second pattern. A bump is formed on the seed layer and electrically connected to the electrode pad. An undercut is formed around the third pattern located under an edge of a lower portion of the bump.

Abstract: The present invention relates to the anticancer composition containing an effective amount of herbal extract, and more particularly to the anticancer composition containing an effective amount of extract of Salviae Miltiorrhizae Radix, Chrysanthemum indicum, Acanthopanax senticosus, Cinnamomum cassia Blume, Eucommia ulmoides Oliv., Glycyrrhiza uralensis Fisch, Pueraria thunbergiana Benth, Crataegus pinnatifida Bunge, Cassia tora, Carthamus tinctorius L., Paeonia lactiflora Pall, and Angelica gigas Nakai. The anticancer composition containing an effective amount of herbal extract has advantage of minimal or few side effects and cytotoxicity as compared to many existing anticancer drugs having cytotoxicity and side effects.

Abstract: Provided are a semiconductor chip and a semiconductor package capable of obtaining stability and reliability through a connection structure using a through-silicon-via (TSV). The semiconductor chip includes a semiconductor substrate and a through-silicon-via (TSV) structure penetrating through the semiconductor substrate. A connection pad includes a foundation base disposed on a lower surface of the semiconductor substrate and connected to the TSV structure. A protruding portion protrudes from the foundation base and extend to an inside of a first groove formed in a lower surface of the semiconductor substrate.