Abstract: Transistors, electronic devices including a transistor and methods of manufacturing the same are provided, the transistor includes an oxide semiconductor layer (as a channel layer) having compositions that vary in one direction. The channel layer may be an oxide layer including a first element, a second element, and Zn, which are metal elements. The amount of at least one of the first element, the second element, and Zn may change in a deposition direction of the channel layer. The first element may be any one of hafnium (Hf), yttrium (Y), tantalum (Ta), zirconium (Zr), gallium (Ga), aluminum (Al) or combinations thereof. The second element may be indium (In). The channel layer may have a multi-layered structure including at least two layers with different compositions.

Abstract: A method of multi-stage substrate etching, includes forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface.

Abstract: Provided are an inverter, a method of manufacturing the inverter, and a logic circuit including the inverter. The inverter may include a first transistor and a second transistor having different channel layer structures. A channel layer of the first transistor may include a lower layer and an upper layer, and a channel layer of the second transistor may be the same as one of the lower layer and the upper layer. At least one of the lower layer and the upper layer may be an oxide layer. The inverter may be an enhancement/depletion (E/D) mode inverter or a complementary inverter.

Abstract: Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device may be a complementary device including a p-type oxide TFT and an n-type oxide TFT. The semiconductor device may be a logic device such as an inverter, a NAND device, or a NOR device.

Abstract: Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a gate insulator of which at least one surface is treated with plasma. The surface of the gate insulator may be an interface that contacts a channel layer. The interface may be treated with plasma by using a fluorine (F)-containing gas, and thus may include fluorine (F). The interface treated with plasma may suppress the characteristic variations of the transistor due to light.

Abstract: Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer.

Abstract: A server connection method for a device provides that if a connection of a client device to a preset file server is not normally performed, requesting connection information of the preset file server by the client device from another client device in the same network, and if the connection information is received by the client device from the other client device, performing the connection to the file server by the client device using the received connection information.

Abstract: An integral imaging system may include a lens unit. The lens unit may include a first substrate; a second substrate; a first electrode on the first substrate; a second electrode on the second substrate; a liquid crystal layer between the first and second substrates; and an array of nanostructures protruding from the first substrate into the liquid crystal layer. The first and second electrodes may be configured to apply one or more voltages to the array of nanostructures. When the one or more voltages are applied to the array of nanostructures, one or more electric fields may be formed between the array of nanostructures and the second electrode, varying an arrangement of molecules in the liquid crystal layer and forming a refractive index distribution in the liquid crystal layer.

Abstract: An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.

Abstract: An electron beam focusing electrode and an electron gun using the same may include a plate having a polygonal through-hole; at least a projecting portion formed on at least one side of the through-hole. By using the electron beam focusing electrode, a spreading phenomenon of an electron beam having a rectangular cross section may be reduced. Further, the output of the electron gun may be increased, and electron beams may be easily focused.

Abstract: A method of multi-stage substrate etching is provided.

Abstract: An active optical device and a display apparatus are provided. The active optical device includes a graphene layer; a plurality of carbon nanotubes (CNTs) disposed on the graphene layer; a transparent electrode layer spaced apart from the plurality of CNTs; and a liquid crystal layer disposed between the graphene layer and the transparent electrode layer. The display apparatus includes a display unit for displaying at least one of two-dimensional (2D) and three-dimensional (3D) images; and the active optical device disposed on the display unit.

Abstract: An X-ray detector including a plurality of chips on a printed circuit board, each of the plurality of chips including a plurality of pixel pads on a center portion of the printed circuit board and a plurality of pin pads surrounding the plurality of pixel pads, a plurality of pixel electrodes on and corresponding to the plurality of chips, a redistribution layer electrically connecting the plurality of pixel electrodes and the plurality of pixel pads, a plurality of first electrode pads on a surface opposite to a surface of the plurality of chips including the plurality of pin pads, a wire electrically connecting the plurality of first electrode pads and the plurality of pin pads, a photoconductor on the plurality of pixel electrodes, and a common electrode on the photoconductor.

Abstract: A thin-film transistor (TFT) substrate includes a semiconductor pattern, a conductive pattern, a first wiring pattern, an insulation pattern and a second wiring pattern. The semiconductor pattern is formed on a substrate. The conductive pattern is formed as a layer identical to the semiconductor pattern on the substrate. The first wiring pattern is formed on the semiconductor pattern. The first wiring pattern includes a source electrode and a drain electrode spaced apart from the source electrode. The insulation pattern is formed on the substrate having the first wiring pattern to cover the first wiring pattern. The second wiring pattern is formed on the insulation pattern. The second wiring pattern includes a gate electrode formed on the source and drain electrodes. Therefore, a TFT substrate is manufactured using two or three masks, so that manufacturing costs may be decreased.

Abstract: An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.

Abstract: An X-ray detector includes a photoconductor, a first diffusion barrier film on a first surface of the photoconductor, at least one pixel electrode on the first diffusion barrier film, a signal transmitting unit to process an electrical signal output from the at least one pixel electrode, and a common electrode on a second surface of the photoconductor opposite to the first surface of the photoconductor.

Abstract: Channel layers and semiconductor devices including the channel layers are disclosed. A channel layer may include a multi-layered structure. Layers forming the channel layer may have different carrier mobilities and/or carrier densities. The channel layer may have a double layered structure including a first layer and a second layer which may be formed of different oxides. Characteristics of the transistor may vary according to materials used to form the channel layers and/or thicknesses thereof.

Abstract: A paste for a photoelectric conversion layer used in an X-ray detector includes photoconductive particles, an organic polymer binder, a first organic solvent to dissolve the organic polymer binder, and a second organic solvent. The second organic solvent has a boiling point in a range of between about 150° C. and about 210° C., inclusive.

Abstract: Provided are an oxide semiconductor and a thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of indium (In) oxide and hafnium (Hf) and may be a channel material of the thin film transistor.

Abstract: An active optical device includes a substrate; a plurality of refractive index variable regions formed on the substrate; and a voltage applier which applies an electric field to the plurality of refractive index variable regions.