Abstract: A plasma processing apparatus having an improved yield includes a metal base member having a disk shape or a cylindrical shape arranged inside a sample table; a refrigerant flow path arranged multiple times in a concentrical shape around a center of the base member; at least one temperature sensor; and a controller configured to detect a temperature of the base member or the wafer using the temperature sensor. The controller is configured to detect the temperature of the base member or the wafer based on one of a plurality of linear functions indicating a relation between an error and a set temperature of the refrigerant, and the linear functions are different corresponding to regions of a plurality of continuous temperature ranges within an adjustable temperature range of the refrigerant, and the plurality of linear functions include the same coefficient and have a point where the error is 0.

Abstract: A plasma processing apparatus includes a sample stage including a placement surface on which a semiconductor wafer is placed, a ring-shaped thin film electrode surrounding the sample stage, and a susceptor ring made of a dielectric covering the thin film electrode, in which the thin film electrode includes a first portion located lower than the rear surface of the semiconductor wafer, a second portion located higher than the main surface of the semiconductor wafer, and a third portion connecting the first portion and the second portion, and the first portion of the thin film electrode has an overlap region that overlaps the semiconductor wafer in a plan view.

Abstract: A plasma processing apparatus includes a processing chamber in which a wafer 1 is processed by using plasma, a radio-frequency power supply that supplies radio-frequency power for generating the plasma, a sample table 2 which is arranged in the processing chamber and in which the wafer 1 is mounted, and a DC power supply 106 which is electrically connected to the sample table 2 and which causes the sample table 2 to generate a suction force. The sample table 2 includes a protruded portion 201a that sucks the wafer 1 by the suction force and a level different portion 201b protruding from a lower portion of the protruded portion 201a. A ring 5 that can be in contact with a lower surface of the wafer 1 is provided outside the protruded portion 201a. A space portion 7 formed by the wafer 1, the protruded portion 201a, and the ring 5 is sealed in a state in which the wafer 1 is sucked to an upper surface of the protruded portion 201a of the sample table 2.

Abstract: A plasma processing apparatus or method that improves the yield of wafer processing, including a sample stand on which the wafer is mounted; plural heaters which are arranged in three or more regions in the radial direction including a circular region concentrically arranged around the center and ring-like regions surrounding the outer periphery on plural radii in the radial direction from the center toward the outer peripheral side, and which include one arranged in each of plural arc-like regions divided in the circumferential direction around the center of at least one of the ring-like regions; plural temperature sensors arranged in the radial direction and the number of which is smaller than that of heaters; and a control unit which adjusts the output of each of the plural heaters according to the output from the temperature sensor so that the temperature of the sample stand becomes closer to a target value.

Abstract: The features of the present invention are that a plasma processing apparatus includes: a process chamber in which a sample is plasma-processed; a dielectric window which airtightly seals an upper part of the process chamber; an inductive antenna which is disposed at an upper part of the dielectric window and forms an induction magnetic field; a radio frequency power source which supplies radio frequency power to the inductive antenna; and a Faraday shield to which radio frequency power is supplied from the radio frequency power source and which is disposed between the dielectric window and the inductive antenna, and the plasma processing apparatus further includes a monitoring unit which monitors a current flowing in the Faraday shield and a control unit which controls the monitored current.

Abstract: A plasma processing apparatus includes a processing chamber in which a wafer 1 is processed by using plasma, a radio-frequency power supply that supplies radio-frequency power for generating the plasma, a sample table 2 which is arranged in the processing chamber and in which the wafer 1 is mounted, and a DC power supply 106 which is electrically connected to the sample table 2 and which causes the sample table 2 to generate a suction force. The sample table 2 includes a protruded portion 201a that sucks the wafer 1 by the suction force and a level different portion 201b protruding from a lower portion of the protruded portion 201a. A ring 5 that can be in contact with a lower surface of the wafer 1 is provided outside the protruded portion 201a. A space portion 7 formed by the wafer 1, the protruded portion 201a, and the ring 5 is sealed in a state in which the wafer 1 is sucked to an upper surface of the protruded portion 201a of the sample table 2.

Abstract: Provided is a vacuum processing apparatus that improves an operation rate or efficiency of processing.

Abstract: A plasma processing apparatus including: a processing chamber; a sample stage; a vacuum exhaust unit; and a plasma generation unit, the sample stage includes: a first metallic base material having a refrigerant flow path formed therein; a second metallic base material disposed above the first metallic base material and has a lower thermal conductivity than the first metallic base material; and a plurality of lift pins vertically moving the object to be processed with respect to the sample stage. A plurality of through-holes through which the plurality of the lift pins passes is formed in the first and the second metallic base material, and a boss, which electrically insulates the lift pin from the first and the second metallic base material and is formed using an insulating member having a higher thermal conductivity than the second metallic base material, is inserted into each of the plurality of through-holes.

Abstract: A sample stage which is disposed inside a vacuum processing chamber and on which a wafer to be processed is placed on an upper surface thereof includes a metallic base material, a metallic substrate insulated from the base material below the base material with an insulating member interposed therebetween, and a base which is disposed below the substrate, has a space set to an atmospheric pressure therein, and is connected to the substrate by an opening above the space being covered, the insulating member has a ring-shaped member made of ceramic with a seal member airtightly sealing a part between a space of an inner peripheral side communicating with an outside of the vacuum vessel and set to the atmospheric pressure and an inside of the processing chamber interposed between the base material and an outer peripheral side portion of the substrate, a plurality of temperature sensors installed to penetrate the substrate and inserted into the base material is included, and the base material, the insulating member

Abstract: A plasma processing device in which plasma processing uniformity is improved up to an outer peripheral portion of a wafer and the number of non-defective devices that can be manufactured from one wafer is increased. The plasma processing device includes a vacuum container; a mounting table, a susceptor ring that covers an outer peripheral portion of an electrode base material, and an insulation ring covered by the susceptor ring and surrounding the electrode base material, and thin film electrode formed on an upper surface and a part of a surface facing the outer periphery of the electrode base material; a first high frequency power applied to the electrode base material a second high frequency power applied to the thin film electrode; a plasma generating unit that generates plasma on an upper portion of the mounting table inside the vacuum container; and a control unit.

Abstract: Provided is a vacuum processing apparatus that improves an operation rate or efficiency of processing.

Abstract: A plasma processing apparatus including: a processing chamber; a sample stage; a vacuum exhaust unit; and a plasma generation unit, the sample stage includes: a first metallic base material having a refrigerant flow path formed therein; a second metallic base material disposed above the first metallic base material and has a lower thermal conductivity than the first metallic base material; and a plurality of lift pins vertically moving the object to be processed with respect to the sample stage. A plurality of through-holes through which the plurality of the lift pins passes is formed in the first and the second metallic base material, and a boss, which electrically insulates the lift pin from the first and the second metallic base material and is formed using an insulating member having a higher thermal conductivity than the second metallic base material, is inserted into each of the plurality of through-holes.

Abstract: A sample stage which is disposed inside a vacuum processing chamber and on which a wafer to be processed is placed on an upper surface thereof includes a metallic base material, a metallic substrate insulated from the base material below the base material with an insulating member interposed therebetween, and a base which is disposed below the substrate, has a space set to an atmospheric pressure therein, and is connected to the substrate by an opening above the space being covered, the insulating member has a ring-shaped member made of ceramic with a seal member airtightly sealing a part between a space of an inner peripheral side communicating with an outside of the vacuum vessel and set to the atmospheric pressure and an inside of the processing chamber interposed between the base material and an outer peripheral side portion of the substrate, a plurality of temperature sensors installed to penetrate the substrate and inserted into the base material is included, and the base material, the insulating member

Abstract: The features of the present invention are that a plasma processing apparatus includes: a process chamber in which a sample is plasma-processed; a dielectric window which airtightly seals an upper part of the process chamber; an inductive antenna which is disposed at an upper part of the dielectric window and forms an induction magnetic field; a radio frequency power source which supplies radio frequency power to the inductive antenna; and a Faraday shield to which radio frequency power is supplied from the radio frequency power source and which is disposed between the dielectric window and the inductive antenna, and the plasma processing apparatus further includes a monitoring unit which monitors a current flowing in the Faraday shield and a control unit which controls the monitored current.

Abstract: To control temperature of a sample in plasma processing with high accuracy while securing an electrostatic chucking force 5 without breakdown of an electrostatic chucking film. When radio-frequency power is time modulated, a high-voltage side Vpp detector detects a first voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to a sample stage in a first period of the time modulation having a 10 first amplitude. A low-voltage side Vpp detector detects a second voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to the sample stage in a second period having a second amplitude smaller than the first amplitude. Then, an ESC power supply control unit controls output voltages from 15 ESC power supplies based on the first voltage value, the second voltage value and a duty ratio of the time modulation.