Patents by Inventor Takeshi Fukunaga

Takeshi Fukunaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7548023
    Abstract: To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue.
    Type: Grant
    Filed: July 30, 2004
    Date of Patent: June 16, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunitaka Yamamoto, Masaaki Hiroki, Takeshi Fukunaga
  • Patent number: 7532208
    Abstract: There is disclosed an electrooptical device capable of achieving a large area display by making full use of the size of the substrate. An active matrix substrate acts as a driver portion for the reflection-type electrooptical device. A pixel matrix circuit and logic circuitry are formed on the active matrix substrate. At this time, the logic circuitry is disposed, by making use of a dead space in the pixel matrix circuit. The area occupied by the pixel matrix circuit, or image display region, can be enlarged without being limited by the area occupied by the logic circuitry.
    Type: Grant
    Filed: November 2, 2004
    Date of Patent: May 12, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Takeshi Fukunaga
  • Publication number: 20090109143
    Abstract: To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue.
    Type: Application
    Filed: October 1, 2008
    Publication date: April 30, 2009
    Inventors: Shunpei Yamazaki, Kunitaka Yamamoto, Masaaki Hiroki, Takeshi Fukunaga
  • Patent number: 7525165
    Abstract: The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided.
    Type: Grant
    Filed: April 12, 2001
    Date of Patent: April 28, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga, Jun Koyama, Kazutaka Inukai
  • Patent number: 7521722
    Abstract: To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue.
    Type: Grant
    Filed: October 6, 2006
    Date of Patent: April 21, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunitaka Yamamoto, Masaaki Hiroki, Takeshi Fukunaga
  • Patent number: 7514864
    Abstract: A light-emitting device having the quality of an image high in homogeneity is provided. A printed wiring board (second substrate) (107) is provided facing a substrate (first substrate) (101) that has a luminous element (102) formed thereon. A PWB side wiring (second group of wirings) (110) on the printed wiring board (107) is electrically connected to element side wirings (first group of wirings) (103, 104) by anisotropic conductive films (105a, 105b). At this point, because a low resistant copper foil is used to form the PWB side wiring (110), a voltage-drop of the element side wirings (103, 104) and a delay of a signal can be reduced. Accordingly, the homogeneity of the quality of an image is improved, and the operating speed of a driver circuit portion is enhanced.
    Type: Grant
    Filed: July 11, 2006
    Date of Patent: April 7, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga
  • Publication number: 20090075460
    Abstract: A process for fabricating a semiconductor device comprising the steps of introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.
    Type: Application
    Filed: November 12, 2008
    Publication date: March 19, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hisashi OHTANI, Takeshi FUKUNAGA, Akiharu MIYANAGA
  • Patent number: 7505091
    Abstract: In a liquid crystal display device which performs image display by controlling a liquid crystal layer by a lateral electric field that is parallel with a substrate, the lateral electric field is formed by a black matrix and a pixel electrode. That is, a common electrode and a black matrix are commonized which are separately provided conventionally. Further, a storage capacitor is formed in an area where the black matrix and a pixel line coextend with a third interlayer insulating film interposed in between. Since the storage capacitor is formed by using all the area where a thin-film transistor is covered with the black matrix, sufficient capacitance can be secured even if the widths of electrodes and wiring lines are reduced in the future.
    Type: Grant
    Filed: December 12, 2007
    Date of Patent: March 17, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiharu Hirakata, Takeshi Nishi, Shunpei Yamazaki, Takeshi Fukunaga
  • Publication number: 20090057670
    Abstract: Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area.
    Type: Application
    Filed: August 19, 2008
    Publication date: March 5, 2009
    Inventors: Shunpei Yamazaki, Jun Koyama, Hiroshi Shibata, Takeshi Fukunaga
  • Patent number: 7494837
    Abstract: There is provided a thin film forming apparatus for precisely forming a film of an organic EL material made of a polymer without a positional deviation and at a high throughput. A pixel portion is divided into a plurality of pixel lines by banks, and a head portion of the thin film forming apparatus is moved along the pixel lines, so that a coating liquid (R), a coating liquid (G), and a coating liquid (B) can be applied respectively in a stripe shape at the same time. Then, luminescent layers emitting lights of respective colors of red, green and blue can be formed by heating these coating liquids.
    Type: Grant
    Filed: August 18, 2006
    Date of Patent: February 24, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunitaka Yamamoto, Masaaki Hiroki, Takeshi Fukunaga
  • Patent number: 7489291
    Abstract: There is disclosed an electrooptical device capable of achieving a large area display by making full use of the size of the substrate. An active matrix substrate acts as a driver portion for the reflection-type electrooptical device. A pixel matrix circuit and logic circuitry are formed on the active matrix substrate. At this time, the logic circuitry is disposed, by making use of a dead space in the pixel matrix circuit. The area occupied by the pixel matrix circuit, or image display region, can be enlarged without being limited by the area occupied by the logic circuitry.
    Type: Grant
    Filed: November 29, 2004
    Date of Patent: February 10, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Takeshi Fukunaga
  • Publication number: 20090035923
    Abstract: A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
    Type: Application
    Filed: July 15, 2008
    Publication date: February 5, 2009
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang
  • Patent number: 7473928
    Abstract: To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue.
    Type: Grant
    Filed: October 10, 2000
    Date of Patent: January 6, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunitaka Yamamoto, Masaaki Hiroki, Takeshi Fukunaga
  • Patent number: 7473968
    Abstract: A semiconductor device having high reliability, in which TFTs with appropriate structures for the circuit functions are arranged, is provided. Gate insulating films (115) and (116) of a driver TFT are designed thinner than a gate insulating film (117) of a pixel TFT in a semiconductor device having a driver circuit and a pixel section on the same substrate. In addition, the gate insulating films (115) and (116) of the driver TFT and a dielectric (118) of a storage capacitor are formed at the same time, so that the dielectric (118) may be extremely thin, and a large capacity can be secured.
    Type: Grant
    Filed: May 2, 2005
    Date of Patent: January 6, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Hiroshi Shibata, Takeshi Fukunaga
  • Patent number: 7470575
    Abstract: A process for fabricating a semiconductor device including the steps of: introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.
    Type: Grant
    Filed: June 24, 2005
    Date of Patent: December 30, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hisashi Ohtani, Takeshi Fukunaga, Akiharu Miyanaga
  • Patent number: 7468285
    Abstract: To reduce the number of layers of an EL layer so that it can be manufactured at a reduced cost. An electrode (a) (102) and an EL layer (103) are formed on an insulator (101), and the EL layer (103) is subjected to plasma processing. A carrier injection region (104) is formed as a result in a superficial portion of the EL layer (103). An electrode (b) (105) is formed thereon to complete an EL element. The EL layer (103) is high in carrier injection efficiency despite being substantially a single layer.
    Type: Grant
    Filed: August 24, 2005
    Date of Patent: December 23, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga
  • Patent number: 7466293
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Grant
    Filed: November 4, 2004
    Date of Patent: December 16, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Publication number: 20080286940
    Abstract: A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate to form a hydrogen-added layer, adhering the single-crystal semiconductor substrate to a supporting substrate, separating the single-crystal semiconductor substrate at the hydrogen-added layer by thermal annealing, performing thermal annealing again to stabilize the adhering interface, and selectively removing the porous silicon layer to give single-crystal silicon layer divided into islands.
    Type: Application
    Filed: July 10, 2008
    Publication date: November 20, 2008
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Takeshi FUKUNAGA
  • Publication number: 20080253355
    Abstract: A radio base-station apparatus with improved frame transmission efficiency by avoiding interference of preambles and frame control information between sectors of a cell or between cells with a frequency reuse factor. In the apparatus OFDMA multiple-access processing is performed for each of a plurality of sectors of a cell, and frames made of logical subchannel numbers and OFDMA symbol numbers are configured in synchronization respectively for the plurality of sectors, and offsets are added to the beginnings of given frames such that the preambles and frame control information arranged sequentially from the beginnings of the frames do not overlap on the OFDMA symbol numbers.
    Type: Application
    Filed: September 30, 2005
    Publication date: October 16, 2008
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Tsuyoshi Tominaga, Kunio Satou, Yasuhiro Ohnaka, Takeshi Fukunaga
  • Publication number: 20080224215
    Abstract: A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer.
    Type: Application
    Filed: May 16, 2008
    Publication date: September 18, 2008
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Akiharu Miyanaga, Jun Koyama, Takeshi Fukunaga