Patents by Inventor Takeshi Fukunaga

Takeshi Fukunaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7727836
    Abstract: Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area.
    Type: Grant
    Filed: August 19, 2008
    Date of Patent: June 1, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Hiroshi Shibata, Takeshi Fukunaga
  • Publication number: 20100099227
    Abstract: A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type semiconductor device is added before forming the gate insulating film. Then, by applying thermal oxidation treatment to the active layer, the impurity element is subjected to redistribution, and the concentration of the impurity element in the principal surface of the active layer is minimized. The precise control of threshold voltage is enabled by the impurity element that is present in a trace quantity.
    Type: Application
    Filed: December 21, 2009
    Publication date: April 22, 2010
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hisashi Ohtani, Takeshi Fukunaga
  • Publication number: 20100081247
    Abstract: A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film an a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
    Type: Application
    Filed: October 15, 2009
    Publication date: April 1, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hongyong ZHANG, Hideki UOCHI, Toru TAKAYAMA, Takeshi FUKUNAGA, Yasuhiko TAKEMURA
  • Patent number: 7683535
    Abstract: To provide a bright and highly reliable light-emitting device. An anode (102), an EL layer (103), a cathode (104), and an auxiliary electrode (105) are formed sequentially in lamination on a reflecting electrode (101). Further, the anode (102), the cathode (104), and the auxiliary electrode (105) are either transparent or semi-transparent with respect to visible radiation. In such a structure, lights generated in the EL layer (103) are almost all irradiated to the side of the cathode (104), whereby an effect light emitting area of a pixel is drastically enhanced.
    Type: Grant
    Filed: August 18, 2005
    Date of Patent: March 23, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeshi Fukunaga, Junya Maruyama
  • Patent number: 7678624
    Abstract: Disclosed is a semiconductor device having a driver circuit operable at high speed and a method for manufacturing same. An active matrix liquid crystal display device uses a polysilicon film for its TFT active layer constituting a pixel matrix circuit because of low off current characteristics. On the other hand, a TFT active layer constituting driver circuits and a signal processing circuit uses a poly silicon germanium film because of high speed operation characteristics.
    Type: Grant
    Filed: September 12, 2006
    Date of Patent: March 16, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga
  • Patent number: 7674497
    Abstract: A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.
    Type: Grant
    Filed: March 17, 2006
    Date of Patent: March 9, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Takeshi Fukunaga
  • Patent number: 7667393
    Abstract: The present invention provides a luminescent apparatus having a bright, high-quality image. A reflecting surface-including electrode, and an EL element formed of an organic EL layer and a transparent electrode are provided on an insulator. As shown in FIG. 1, an auxiliary electrode 107 formed of a transparent conductive film is connected to the transparent electrode via a conductor. This structure enables a resistance value of the transparent electrode 104 to be substantially lowered, and a uniform voltage to be applied to the organic EL layer.
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: February 23, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Takeshi Fukunaga
  • Publication number: 20100037197
    Abstract: An integrated circuit design method includes: obtaining layout data of an integrated circuit; and updating the layout data to modify the layout of the integrated circuit. In updating the layout data, a first via placed on an interconnection is replaced with a plurality of second vias having a size smaller than that of the first via. The positions of the via origin points of the second vias on the interconnection is different from the position of the via origin point of the first via on the interconnection.
    Type: Application
    Filed: July 7, 2009
    Publication date: February 11, 2010
    Applicant: NEC ELECTRONICS CORPORATION
    Inventor: Takeshi Fukunaga
  • Publication number: 20100021624
    Abstract: An apparatus for forming a film having high uniformity in its film thickness distribution is provided. An evaporation source is used in which an evaporation cell, or a plurality of evaporation cells, having a longitudinal direction is formed, and by moving the evaporation source in a direction perpendicular to the longitudinal direction of the evaporation source, a thin film is deposited on a substrate. By making the evaporation source longer, the uniformity of the film thickness distribution in the longitudinal direction is increased. The evaporation source is moved, film formation is performed over the entire substrate, and therefore the uniformity of the film thickness distribution over the entire substrate can be increased.
    Type: Application
    Filed: May 18, 2009
    Publication date: January 28, 2010
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga
  • Publication number: 20090315111
    Abstract: An active region, a source region, and a drain region are formed on a single crystal semiconductor substrate or a single crystal semiconductor thin film. Impurity regions called pinning regions are formed in striped form in the active region so as to reach both of the source region and the drain region. Regions interposed between the pinning regions serve as channel forming regions. A tunnel oxide film, a floating gate, a control gate, etc. are formed on the above structure. The impurity regions prevent a depletion layer from expanding from the source region toward the drain region.
    Type: Application
    Filed: April 21, 2009
    Publication date: December 24, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: SHUNPEI YAMAZAKI, Hisashi Ohtani, Jun Koyama, Takeshi Fukunaga
  • Patent number: 7636136
    Abstract: To provide a technology for fabricating a high image quality liquid crystal display device, a set range of a cell gap for holding a liquid crystal layer is limited in accordance with a distance of a pixel pitch in which specifically, the cell gap is set to be a distance of one tenth of the pixel pitch, whereby the high image quality liquid crystal display device with no occurrence of image display failure caused by disturbances of an electric field such as disclination, can be realized.
    Type: Grant
    Filed: March 23, 2007
    Date of Patent: December 22, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Takeshi Fukunaga
  • Patent number: 7635861
    Abstract: A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type semiconductor device is added before forming the gate insulating film. Then, by applying thermal oxidation treatment to the active layer, the impurity element is subjected to redistribution, and the concentration of the impurity element in the principal surface of the active layer is minimized. The precise control of threshold voltage is enabled by the impurity element that is present in a trace quantity.
    Type: Grant
    Filed: January 31, 2006
    Date of Patent: December 22, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hisashi Ohtani, Takeshi Fukunaga
  • Publication number: 20090298210
    Abstract: An inexpensive light emitting device and inexpensive electric equipment are provided. A substrate on which a semiconductor element or a light emitting element is formed and a color filter are manufactured by separate manufacturing processes, and they are bonded to each other to complete the light emitting device. Thus, the yield of the light emitting device is improved and the manufacture period is shortened.
    Type: Application
    Filed: August 13, 2009
    Publication date: December 3, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga, Jun Koyama, Kazutaka Inukai
  • Patent number: 7622335
    Abstract: A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
    Type: Grant
    Filed: August 26, 2004
    Date of Patent: November 24, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Hideki Uochi, Toru Takayama, Takeshi Fukunaga, Yasuhiko Takemura
  • Publication number: 20090269871
    Abstract: To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue.
    Type: Application
    Filed: July 10, 2009
    Publication date: October 29, 2009
    Inventors: Shunpei YAMAZAKI, Kunitaka YAMAMOTO, Masaaki HIROKI, Takeshi FUKUNAGA
  • Publication number: 20090233390
    Abstract: The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided.
    Type: Application
    Filed: March 20, 2009
    Publication date: September 17, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Takeshi FUKUNAGA, Jun KOYAMA, Kazutaka INUKAI
  • Patent number: 7579203
    Abstract: An inexpensive light emitting device and inexpensive electric equipment are provided. A substrate on which a semiconductor element or a light emitting element is formed and a color filter are manufactured by separate manufacturing processes, and they are bonded to each other to complete the light emitting device. Thus, the yield of the light emitting device is improved and the manufacture period is shortened.
    Type: Grant
    Filed: April 25, 2001
    Date of Patent: August 25, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga, Jun Koyama, Kazutaka Inukai
  • Publication number: 20090195523
    Abstract: There is disclosed an electrooptical device capable of achieving a large area display by making full use of the size of the substrate. An active matrix substrate acts as a driver portion for the reflection-type electrooptical device. A pixel matrix circuit and logic circuitry are formed on the active matrix substrate. At this time, the logic circuitry is disposed, by making use of a dead space in the pixel matrix circuit. The area occupied by the pixel matrix circuit, or image display region, can be enlarged without being limited by the area occupied by the logic circuitry.
    Type: Application
    Filed: April 9, 2009
    Publication date: August 6, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Jun Koyama, Takeshi Fukunaga
  • Publication number: 20090189511
    Abstract: A light-emitting device having the quality of an image high in homogeneity is provided. A printed wiring board (second substrate) (107) is provided facing a substrate (first substrate) (101) that has a luminous element (102) formed thereon. A PWB side wiring (second group of wirings) (110) on the printed wiring board (107) is electrically connected to element side wirings (first group of wirings) (103, 104) by anisotropic conductive films (105a, 105b). At this point, because a low resistant copper foil is used to form the PWB side wiring (110), a voltage drop of the element side wirings (103, 104) and a delay of a signal can be reduced. Accordingly, the homogeneity of the quality of an image is improved, and the operating speed of a driver circuit portion is enhanced.
    Type: Application
    Filed: April 1, 2009
    Publication date: July 30, 2009
    Inventors: Shunpei Yamazaki, Takeshi Fukunaga
  • Publication number: 20090186439
    Abstract: There is provided a thin film forming apparatus for precisely forming a film of an organic EL material made of a polymer without a positional deviation and at a high throughput. A pixel portion is divided into a plurality of pixel lines by banks, and a head portion of the thin film forming apparatus is moved along the pixel lines, so that a coating liquid (R), a coating liquid (G), and a coating liquid (B) can be applied respectively in a stripe shape at the same time. Then, luminescent layers emitting lights of respective colors of red, green and blue can be formed by heating these coating liquids.
    Type: Application
    Filed: February 19, 2009
    Publication date: July 23, 2009
    Inventors: Shunpei Yamazaki, Kunitaka Yamamoto, Masaaki Hiroki, Takeshi Fukunaga