Publication number: 20190296146
Abstract: A semiconductor device of an embodiment includes a silicon carbide layer; a gate electrode; a gate insulating layer disposed between the silicon carbide layer and the gate electrode; a first region disposed in the silicon carbide layer and containing nitrogen (N); and a second region disposed between the first region and the gate insulating layer, and containing at least one element selected from the group consisting of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), scandium (Sc), yttrium (Y), lanthanum (La), lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu), hydrogen (H), deuterium (D), and fluorine (F).
Type:
Application
Filed:
August 27, 2018
Publication date:
September 26, 2019
Applicant:
Kabushiki Kaisha Toshiba
Inventors:
Tatsuo SHIMIZU, Ryosuke IIJIMA, Toshihide ITO, Shunsuke ASABA, Yukio NAKABAYASHI, Shigeto FUKATSU