Abstract: A semiconductor device according to an embodiment includes a nitride semiconductor layer, an insulating layer provided on the nitride semiconductor layer, a first region provided in the nitride semiconductor layer, and a second region which is provided between the first region in the nitride semiconductor layer and the insulating layer, has a higher electric resistivity than the first region, and includes carbon (C).

Abstract: A method for manufacturing a semiconductor device according to an embodiment includes: forming an insulating layer having a first plane in contact with a nitride semiconductor layer and a second plane opposite to the first plane and containing at least one of an oxide and an oxynitride; and performing first heat treatment at 600° C. or more and 1100° C. or less in a state where a voltage making a first plane side positive relative to a second plane side is applied to the insulating layer.

Abstract: A semiconductor device according to an embodiment includes a nitride semiconductor layer, an insulating layer provided on the nitride semiconductor layer, a first region provided in the nitride semiconductor layer, and a second region which is provided between the first region in the nitride semiconductor layer and the insulating layer, has a higher electric resistivity than the first region, and includes carbon (C).

Abstract: A semiconductor device according to an embodiment includes a first electrode; a second electrode; a silicon carbide layer disposed between the first electrode and the second electrode; an n-type silicon carbide region disposed in the silicon carbide layer and having a first nitrogen concentration; a first p-type silicon carbide region disposed in the silicon carbide layer between the n-type silicon carbide region and the first electrode and having a second nitrogen concentration higher than the first nitrogen concentration; and a second p-type silicon carbide region disposed in the silicon carbide layer between the first p-type silicon carbide region and the first electrode, having a third nitrogen concentration higher than the second nitrogen concentration, and having a p-type impurity concentration higher than that of the first p-type silicon carbide region.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor region including a first compound including silicon and carbon, and a second semiconductor region including a second compound including silicon and carbon. The first semiconductor region includes first to third regions contacting the second semiconductor region. The third region is positioned between the first region and the second region. The first region and the second region include germanium. The third region does not include germanium, or a concentration of germanium in the third region is lower than a concentration of germanium in the first region and lower than a concentration of germanium in the second region.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor region including first and second compounds including silicon and carbon. The first semiconductor region includes first to third regions contacting the second semiconductor region. The third region is positioned between the first and second regions. The first and second regions include a first element. The first element includes at least one selected from the group consisting of second and third elements. The second element includes at least one selected from the group consisting of Ar, Kr, Xe, and Rn. The third element includes at least one selected from the group consisting of Cl, Br, I, and At. The third region does not include the first element, or a concentration of the first element in the third region is lower than concentrations of the first element in the first and second regions.

Abstract: A semiconductor device includes a nitride semiconductor layer, a first electrode and second electrode on the nitride semiconductor layer, a gate electrode, and a gate insulating layer between the nitride semiconductor layer and the gate electrode. The gate insulating layer has a first oxide region containing at least any one element of aluminum and boron, gallium, and silicon. When a distance between the first end portion and the second end portion of the first oxide region is defined as d1, and a position separated by d1/10 from the first end portion toward the second end portion is defined as a first position, an atomic concentration of gallium at the first position is 80% or more and 120% or less of that of the at least any one element.

Abstract: A semiconductor device includes a semiconductor region, a gate electrode, and a first gate insulating film provided between the semiconductor region and the gate electrode and containing a material having a chemical composition expressed by (SiO2)n (Si3N4)m (wherein n and m are positive integers), in the material, at least one silicon atom being bonded with at least one oxygen atom and at least one nitrogen atom.

Abstract: A semiconductor device according to an embodiment includes a first nitride semiconductor layer; a second nitride semiconductor layer on the first nitride semiconductor layer; a first electrode and a second electrode disposed on or above the first nitride semiconductor layer; a gate electrode above the first nitride semiconductor layer; and a gate insulating layer, the gate insulating layer including a silicon oxide film and an aluminum oxynitride film, the aluminum oxynitride film disposed between the first nitride semiconductor layer and the silicon oxide film, a first atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a first position in the aluminum oxynitride film being higher than a second atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a second position in the aluminum oxynitride film, and the second position being closer to the silicon oxide film than the first position.

Abstract: A semiconductor device according to an embodiment includes a SiC semiconductor layer, a gate electrode, a gate insulating film provided between the SiC semiconductor layer and the gate electrode, and a region that is provided between the SiC semiconductor layer and the gate insulating film and includes at least one element selected from the group consisting of antimony (Sb), scandium (Sc), yttrium (Y), lanthanum (La), and lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu). The concentration of the at least one element is equal to or greater than 1×1019 cm?3 and equal to or less than 2.4×1022 cm?3.

Abstract: A semiconductor device according to an embodiment includes a semiconductor region, a gate electrode, and a first gate insulating film provided between the semiconductor region and the gate electrode and containing a material having a chemical composition expressed by (SiO2)n(Si3N4)m (where n and m are positive integers), in the material, at least one silicon atom being bonded with at least one oxygen atom and at least one nitrogen atom.

Abstract: Provided is microparticle extraction technology capable of stably extracting only a target microparticle at high speed from a sheath flow flowing through a flow path. A particle extraction apparatus includes: a first extraction unit for extracting, from a whole sample containing a target particle, an extraction sample containing the target particle without performing abort processing; and a second extraction unit for subjecting the extraction sample to abort processing and extracting only the target particle.

Abstract: A semiconductor device of an embodiment includes a nitride semiconductor layer, a first electrode provided on the nitride semiconductor layer, a second electrode provided on the nitride semiconductor layer, a third electrode provided above the nitride semiconductor layer, the third electrode provided between the first electrode and the second electrode, the third electrode containing a polycrystalline nitride semiconductor containing a p-type impurity, and a first insulating layer provided between the nitride semiconductor layer and the third electrode.

Abstract: In one embodiment, a semiconductor device is provided with a semiconductor layer made of a nitride semiconductor, a first gate electrode, a first structure body between the first gate electrode and the semiconductor layer, and a first insulating layer between the semiconductor layer and the first structure body. The first structure body has a first intermediate layer made of a conductor to suppress generation of charges at respective interfaces with adjacent layers, a first layer having dielectric property between the first gate electrode and the first intermediate layer, and a second layer having dielectric property between the first gate electrode and the first layer, and has dipoles at an interface between the first layer and the second layer.

Abstract: A semiconductor device according to an embodiment includes a first nitride semiconductor layer; a second nitride semiconductor layer on the first nitride semiconductor layer; a first electrode and a second electrode disposed on or above the first nitride semiconductor layer; a gate electrode above the first nitride semiconductor layer; and a gate insulating layer, the gate insulating layer including a silicon oxide film and an aluminum oxynitride film, the aluminum oxynitride film disposed between the first nitride semiconductor layer and the silicon oxide film, a first atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a first position in the aluminum oxynitride film being higher than a second atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a second position in the aluminum oxynitride film, and the second position being closer to the silicon oxide film than the first position.

Abstract: A semiconductor device according to an embodiment includes a metal layer; an n-type first silicon carbide region; and a second silicon carbide region of metal containing at least one element selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt) and positioned between the metal layer and the first silicon carbide region.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer including a nitride semiconductor, a first electrode separated from the first semiconductor layer in a first direction, and a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode. The first insulating film has a first thickness in the first direction. The first insulating film includes a first position, and a distance between the first position and the first semiconductor layer is ½ of the first thickness. A first hydrogen concentration of hydrogen at the first position is 2.5×1019 atoms/cm3 or less.

Abstract: A nitride semiconductor device includes a first semiconductor layer including a nitride semiconductor, a second semiconductor layer contacting the first semiconductor layer and including a nitride semiconductor, a source electrode, a drain electrode, a first gate electrode, a second gate electrode provided on an opposite side, a first insulating layer and a second insulating layer. The gate electrode has a protrusion portion inside the semiconductor layer. A distance between the first gate electrode and the protrusion portion of the second gate electrode is shorter than a distance between the source electrode and the second insulating layer, and shorter than a distance between the drain electrode and the second insulating layer.

Abstract: According to one embodiment, a semiconductor device includes first to fourth semiconductor regions, first and second electrodes, and a first insulating film. The first semiconductor region includes first and second partial regions, and an intermediate partial region. The first electrode is separated from the first partial region. The second electrode includes first and second conductive regions. The second semiconductor region is provided between the first conductive region and the first electrode. The third semiconductor region is provided between the first conductive region and at least a portion of the second semiconductor region. The fourth semiconductor region includes third and fourth partial regions. The fourth partial region is positioned between the first conductive region and the first electrode. The first insulating film is provided, between the fourth partial region and the first electrode, and between the second semiconductor region and the first electrode.

Abstract: A semiconductor device of an embodiment includes a first nitride semiconductor layer, a second nitride semiconductor layer located on the first nitride semiconductor layer and having a larger bandgap than the first nitride semiconductor layer, a first electrode on the second nitride semiconductor layer, a second electrode on the second nitride semiconductor layer, a gate electrode located between the first electrode and the second electrode, and a first insulating layer located at least between the gate electrode and the second electrode on the second nitride semiconductor layer, the first insulating layer being an oxide of at least one first element selected from the group consisting of Hf, Zr, and Ti, and containing 5×1019 cm?3 or more of at least one second element selected from the group consisting of F, H, D, V, Nb, and Ta, and 5×1019 cm?3 or more of at least one third element selected from the group consisting of N, P, As, Sb, Bi, Be, Mg, Ca, Sr, Ba, Sc, Y, and lanthanoids.