Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified, and the filtering device has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series and extends from the inlet portion to the outlet portion, in which the filter A has a porous base material made of polyfluorocarbon and a coating layer which is disposed to cover the porous base material and contains a resin having an adsorptive group.

Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified and has an inlet portion, an outlet portion, a filter A, a filter B different from the filter A, and a flow path extending from the inlet portion to the outlet portion, in which the filter A and the filter B are arranged in series between the inlet portion and the outlet portion and have, and the filter A is selected from the group consisting of predetermined filters A1, A2, and A3.

Abstract: A memory device includes a first memory cell array, a second memory cell array disposed in a first direction with respect to the first memory cell array, a first contact plug extending in the first direction through the first memory cell array, and a second contact plug extending in the first direction through the second memory cell array. The first memory cell array includes first electrode layers stacked in a first direction, and a first semiconductor pillar extending through the first electrode layers in the first direction. The second memory cell array including second electrode layers stacked in the first direction, and a second semiconductor pillar extending in the first direction through the second electrode layers. The first contact plug is electrically connected to the first semiconductor pillar, and the second contact plug is electrically connected to the second semiconductor pillar and the first contact plug.

Abstract: A memory device includes a first memory cell array, a second memory cell array disposed in a first direction with respect to the first memory cell array, a first contact plug extending in the first direction through the first memory cell array, and a second contact plug extending in the first direction through the second memory cell array. The first memory cell array includes first electrode layers stacked in a first direction, and a first semiconductor pillar extending through the first electrode layers in the first direction. The second memory cell array including second electrode layers stacked in the first direction, and a second semiconductor pillar extending in the first direction through the second electrode layers. The first contact plug is electrically connected to the first semiconductor pillar, and the second contact plug is electrically connected to the second semiconductor pillar and the first contact plug.

Abstract: An object of the present invention is to provide a filtering device which makes it possible to obtain a chemical liquid having excellent performance and enables filter media to have sufficiently long pot life. Another object of the present invention is to provide a purification device, a chemical liquid manufacturing device, a filtered substance to be purified, a chemical liquid, and an actinic ray-sensitive or radiation-sensitive resin composition. A filtering device according to an embodiment of the present invention has a first filter unit including a first filter, which satisfies at least one condition selected from the group consisting of following conditions 1 to 3, and a housing accommodating the first filter and a second filter unit including a second filter different from the first filter and a housing accommodating the second filter, in which the first filter unit and the second filter unit are independently disposed in a pipe line through which a substance to be purified is supplied.

Abstract: A container has a base material and a coating layer which is disposed on at least a portion of the base material, contains a composition containing at least one kind of metal component selected from the group consisting of Ti, Al, Mg, Zr, Hf, Fe, Ni, Sn, Zn, Cr, and Mo, and has a thickness equal to or greater than 50 ?m. In a case where the composition contains one kind of metal component, a ratio RCAs calculated by CA1s/CA2s is less than 1.0. Alternatively, in a case where the composition contains two or more kinds of metal components, in at least a portion of the coating layer, an average of RCAs determined for each of two or more kinds of the metal components is less than 1.0.

Abstract: A relief valve that includes a tube; a valve configured to slide along an inner wall of the tube in an axial direction, and a spring that urges the valve, wherein the valve has a hydraulic pressure receiving surface on a first axial side that is one side in the axial direction, and a spring abutment against which the spring abuts, on a second axial side opposite to the first axial side, and the tube has a discharge oil passage having an opening in the inner wall and extending through the inner wall in a radial direction.

Abstract: An oil supply device that includes a first pump configured to discharge oil by being driven by power transferred along the power transfer path; a second pump configured to discharge the oil by being driven by a power source independent of the power transfer path; a first supply oil passage through which the oil discharged from the first pump is supplied to the transmission; and a second supply oil passage through which the oil discharged from the second pump is supplied to the friction engagement device.

Abstract: A memory device includes a first memory cell array, a second memory cell array disposed in a first direction with respect to the first memory cell array, a first contact plug extending in the first direction through the first memory cell array, and a second contact plug extending in the first direction through the second memory cell array. The first memory cell array includes first electrode layers stacked in a first direction, and a first semiconductor pillar extending through the first electrode layers in the first direction. The second memory cell array including second electrode layers stacked in the first direction, and a second semiconductor pillar extending in the first direction through the second electrode layers. The first contact plug is electrically connected to the first semiconductor pillar, and the second contact plug is electrically connected to the second semiconductor pillar and the first contact plug.

Abstract: A linear motor system that includes a field system in which magnets are arrayed such that polarities are alternately different, armatures, a magnetic detector which includes first, second and third hall elements, and in which an electrical angle phase of the third hall element is shifted from that of the first hall element by 90° and an electrical angle phase of the second hall element is shifted from that of the first hall element by 180°, and a calculator which calculates a first electrical angle from outputs of the first and the third hall elements, calculates a second electrical angle from outputs of the second and the third hall elements, and calculates an estimated value of an electrical angle by weighting is provided. An electrical angle with a larger amplitude between the first and the second electrical angles is multiplied by a relatively larger coefficient value.

Abstract: A memory device includes a first memory cell array, a second memory cell array disposed in a first direction with respect to the first memory cell array, a first contact plug extending in the first direction through the first memory cell array, and a second contact plug extending in the first direction through the second memory cell array. The first memory cell array includes first electrode layers stacked in a first direction, and a first semiconductor pillar extending through the first electrode layers in the first direction. The second memory cell array including second electrode layers stacked in the first direction, and a second semiconductor pillar extending in the first direction through the second electrode layers. The first contact plug is electrically connected to the first semiconductor pillar, and the second contact plug is electrically connected to the second semiconductor pillar and the first contact plug.

Abstract: The storage container according to the embodiment of the present invention includes a storage portion storing a liquid composition containing an organic solvent having a moisture concentration of 400 ppm by mass or less and a surface treatment agent. At least a portion, which is in contact with the liquid composition, of an inner wall of the storage portion has a contact angle ? with respect to water of 10 degrees or more and 150 degrees or less.

Abstract: An object of the present invention is to provide a purification device which makes it possible to obtain a solvent with a reduced impurity content and a raw material of the solvent. Another object of the present invention is to provide a purification method, a manufacturing device, and a manufacturing method of a chemical liquid. Still another object of the present invention is to provide a container which makes it difficult for an impurity content in a chemical liquid to increase even in a case where the chemical liquid is filled into the container and stored for a predetermined period of time. Yet another object of the present invention is to provide a chemical liquid storage container.

Abstract: An object of the present invention is to provide a treatment liquid which is capable of suppressing the generation of defects of a semiconductor device and has excellent corrosion resistance and wettability. The treatment liquid of the present invention is a treatment liquid for a semiconductor device, containing at least one organic solvent selected from the group consisting of ethers, ketones, and lactones, water, and a metal component including at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, in which the content of water in the treatment liquid is 100 ppb by mass to 100 ppm by mass and the content of the metal component in the treatment liquid is 10 ppq by mass to 10 ppb by mass.

Abstract: An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor and a pattern forming method, in which the formation of particles including metal atoms can be reduced and an excellent pattern can be formed. A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: a quaternary ammonium compound represented by Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn, and a total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.

Abstract: An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor with which the occurrence of defects such as particles is suppressed such that a fine resist pattern or a fine semiconductor element can be manufactured, and a storage container storing the treatment liquid for manufacturing a semiconductor. In addition, another object of the present invention is to provide a pattern forming method using the treatment liquid for manufacturing a semiconductor and a method of manufacturing an electronic device. A storage container according to an embodiment of the present invention includes a storage portion that stores a treatment liquid for manufacturing a semiconductor.

Abstract: In a method of manufacturing a chemical fluid for manufacturing an electronic material, a method of reducing particulate metal in the chemical fluid is selected according to a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by SP ICP-MS in the chemical fluid, and at least one of the concentration of particulate metal including an iron atom, the concentration of particulate metal including a copper atom, or the concentration of particulate metal including a zinc atom is reduced by using the selected reducing method.

Abstract: A memory device includes a first memory cell array, a second memory cell array disposed in a first direction with respect to the first memory cell array, a first contact plug extending in the first direction through the first memory cell array, and a second contact plug extending in the first direction through the second memory cell array. The first memory cell array includes first electrode layers stacked in a first direction, and a first semiconductor pillar extending through the first electrode layers in the first direction. The second memory cell array including second electrode layers stacked in the first direction, and a second semiconductor pillar extending in the first direction through the second electrode layers. The first contact plug is electrically connected to the first semiconductor pillar, and the second contact plug is electrically connected to the second semiconductor pillar and the first contact plug.

Abstract: The present invention enables to obtain an approximate position of a zero crossing point in a shorter time period. A magnetic position sensor detects, with an array in which multiple magnetic detection elements are arranged in a straight line, the zero crossing point at which the magnetic flux density from a pair of magnetic poles is zero in a plane perpendicular to the longitudinal direction of the array. The magnetic detection elements are elements whose output changes in polarity when the direction of the magnetic flux density is inverted, and detect an approximate position of the zero crossing point by reading an output of every k-th magnetic detection element of the array (where k is an integer of 2 or greater). Then, the position of the zero crossing point is detected according to outputs of at least two magnetic detection elements on both sides of the zero crossing point.

Abstract: A linear motor system that includes a field system in which magnets are arrayed such that polarities are alternately different, armatures, a magnetic detector which includes first, second and third hall elements, and in which an electrical angle phase of the third hall element is shifted from that of the first hall element by 90° and an electrical angle phase of the second hall element is shifted from that of the first hall element by 180°, and a calculator which calculates a first electrical angle from outputs of the first and the third hall elements, calculates a second electrical angle from outputs of the second and the third hall elements, and calculates an estimated value of an electrical angle by weighting is provided. An electrical angle with a larger amplitude between the first and the second electrical angles is multiplied by a relatively larger coefficient value.