Abstract: A semiconductor device including alternating stepped semiconductor die stacks to allow for large numbers of semiconductor die to be provided within a semiconductor device using short wire bonds.

Abstract: A rigid wave pattern formed on a first side of a substrate in a semiconductor die package. The rigid wave pattern aligns with and overlies the contact fingers formed on the second side of the substrate. The rigid wave pattern includes a first pattern with an etched portion and an unetched portion around the etched portion. When the substrate and dice are encased during the molding process, the rigid wave pattern effectively reduces deformation of and stresses on the dice, therefore substantially alleviating die cracking.

Abstract: A photoelectric conversion material is disclosed in the present invention and comprises at least a cone material. The cone material is composed of an isomer and comprises a plurality of grains. The sizes of the grains are arranged from smaller ones to larger ones along a direction. In the meantime, a method for fabricating the above photoelectric conversion material is also disclosed here. The method comprises the following steps. First, a precursor is provided. The precursor comprises at least a cone material and the cone material is a multilayer structured material, such as sodium titanate and potassium titanate, formed by stacking first materials and second materials. And then, the precursor is annealed to let the second materials leave from the cone material, and the cone material becomes the above photoelectric conversion material with a plurality of grains.

Abstract: A strengthened semiconductor die substrate and package are disclosed. The substrate may include contact fingers formed with nonlinear edges. Providing a nonlinear contour to the contact finger edges reduces the mechanical stress exerted on the semiconductor die which would otherwise occur with straight edges to the contact fingers. The substrate may additionally or alternatively include plating traces extending at an angle from the contact fingers. Extending at an angle, at least the ends of the plating traces at the edge of the substrate are covered beneath a lid in which the semiconductor package is encased. Thus, when in use with a host device, contact between the ends of the plating traces beneath the lid and contact pins of the host device is avoided.

Abstract: An article of manufacture having a nominal airfoil profile substantially in accordance with Cartesian coordinate values of X, Y and Z set forth in a scalable table, the scalable table selected from the group of tables consisting of TABLES 1-11, wherein the Cartesian coordinate values of X, Y and Z are non-dimensional values convertible to dimensional distances by multiplying the Cartesian coordinate values of X, Y and Z by a number, and wherein X and Y are coordinates which, when connected by continuing arcs, define airfoil profile sections at each Z height, the airfoil profile sections at each Z height being joined with one another to form a complete airfoil shape.

Abstract: An article of manufacture has a first component configured for use with a turbomachine. The first component is configured for attachment to a second component, and reduces the possibility of attachment with an undesired third component by modification of a characteristic of the first component. This modification is matched by a complementary characteristic of the second component. The first component has a nominal airfoil profile substantially in accordance with Cartesian coordinate values of X, Y and Z set forth in a scalable table selected from the group consisting of TABLES 1-11. Cartesian coordinate values of X, Y and Z are non-dimensional values convertible to dimensional distances by multiplying by a number. X and Y are coordinates which, when connected by continuing arcs, define airfoil profile sections at each Z height. The airfoil profile sections at each Z height being joined with one another to form a complete airfoil shape.

Abstract: A semiconductor device including alternating stepped semiconductor die stacks to allow for large numbers of semiconductor die to be provided within a semiconductor device using short wire bonds.

Abstract: A semiconductor package including a plurality of stacked semiconductor die, and methods of forming the semiconductor package, are disclosed. In order to ease wirebonding requirements on the controller die, the controller die may be mounted directly to the substrate in a flip chip arrangement requiring no wire bonds or footprint outside of the controller die. Thereafter, a spacer layer may be affixed to the substrate around the controller die to provide a level surface on which to mount one or more flash memory die. The spacer layer may be provided in a variety of different configurations.

Abstract: A printed circuit board is disclosed having coextensive electrical connectors and contact pad areas. Areas of the contact pads where the traces and/or vias are located may be etched away to ensure electrical isolation between the traces, vias and contact pads.

Abstract: A semiconductor device includes a substrate (102) with a cavity (112) formed therein for receiving a semiconductor die. In examples, the semiconductor die is a controller die (114). The controller die (114) may be electrically connected to the substrate (102) with electrical traces (120) which may be formed for example by printing. After the controller die (114) is electrically connected to the substrate (102), one or more memory die (150) may be affixed to the substrate (102), over the cavity (112) and controller die (114).

Abstract: A system and method are disclosed for applying a die attach epoxy to substrates on a panel of substrates. The system includes a window clamp having one or more windows through which the epoxy may be applied onto the substrate panel. The size and shape of the one or more windows correspond to the size and shape of the area on the substrate to receive the die attach epoxy. Once the die attach epoxy is sprayed onto the substrate through the windows of the window clamp, the die may be affixed to the substrate and the epoxy cured in one or more curing steps. The system may further include a clean-up follower for cleaning epoxy off of the window clamp, and a window cleaning mechanism for cleaning epoxy off of the sidewalls of the windows of the window clamp.

Abstract: A semiconductor device, and a method of its manufacture, are disclosed. The semiconductor device includes a semiconductor die, such as a controller die, mounted on a surface of a substrate. Pillars, for example of solder, may also formed on the substrate, around the semiconductor die. The pillars are formed to a height above the substrate that is greater than the height of the substrate-mounted semiconductor die, including any wire bonds, above the substrate. A second group of one or more semiconductor die, such as flash memory die, may be affixed to the substrate, on top of the solder pillars without contacting the substrate-mounted semiconductor die.

Abstract: A semiconductor wafer, die and semiconductor package formed therefrom are disclosed, where the inactive surface of the wafer has an extrinsic gettering pattern formed from a texturing process. In examples, the texturing process follows a polishing process that removes stress concentration point from the inactive surface of the wafer.

Abstract: A laminating device (230) and method are disclosed for laminating semiconductor die (220) on substrates on a panel (200) of substrates. The laminating device (230) includes lamination units (234,236,238,240) that operate independently of each other so that a row or column of semiconductor die (220) may be independently laminated onto a row or column of substrates simultaneously.

Abstract: An article of manufacture having a nominal airfoil profile substantially in accordance with Cartesian coordinate values of X, Y and Z set forth in a scalable table, the scalable table selected from the group of tables consisting of TABLES 1-11, wherein the Cartesian coordinate values of X, Y and Z are non-dimensional values convertible to dimensional distances by multiplying the Cartesian coordinate values of X, Y and Z by a number, and wherein X and Y are coordinates which, when connected by continuing arcs, define airfoil profile sections at each Z height, the airfoil profile sections at each Z height being joined with one another to form a complete airfoil shape.

Abstract: A printed circuit board is disclosed having coextensive electrical connectors and contact pad areas. Areas of the contact pads where the traces and/or vias are located may be etched away to ensure electrical isolation between the traces, vias and contact pads.

Abstract: A faucet with built-in filter units includes a plurality of filter units arranged inside a main body of the faucet and also includes a dirt discharge valve so that the present invention requires no addition of external filters attached to the main body and enables automatic washing of hollow fiber membrane type filter units arranged therein so as to improve drinking water hygiene and extend lifespan of the filters.

Abstract: A rigid wave pattern formed on a first side of a substrate in a semiconductor die package. The rigid wave pattern aligns with and overlies the contact fingers formed on the second side of the substrate. The rigid wave pattern includes a first pattern with an etched portion and an unetched portion around the etched portion. When the substrate and dice are encased during the molding process, the rigid wave pattern effectively reduces deformation of and stresses on the dice, therefore substantially alleviating die cracking.

Abstract: The present invention relates to a method for tuning shape, exposed crystal face and size of titanium dioxide by using inorganic salts and changing pH value of the reaction environment. The present invention changes the shape of titanium dioxide crystal and the exposed face thereof by adding different inorganic salts during the reaction to utilize different alkali metal ions of the inorganic salts and also can change the size of titanium dioxide crystal by tuning different pH value in the reaction. By this synthesis method, the shape and size of titanium dioxide can be tuned for different applications, such as photocatalysis, dye-sensitized solar cells, photolysis of water and other optoelectronic components or materials, to achieve their optimal efficiencies.