Abstract: A memory device, and a method of making the memory device, are disclosed. The memory device is fabricated by mounting one or more semiconductor die on a substrate, and wire bonding the die to the substrate. The die and wire bonds are encapsuated, and the encapsulated device is singulated. The wire bonds are severed during the singulation step, and thereafter the severed wire bonds are connected to the substrate by external connectors on one or more surfaces of the molding compound.

Abstract: A memory device including graphical content and a method of making the memory device with graphical content are disclosed. The graphical content is formed on a release media. The release media and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the graphical content is transferred from the release media to the encapsulated memory device.

Abstract: An integrated circuit, and a semiconductor die package formed therefrom, are disclosed including solder columns for adding structural support to the package during the fabrication process.

Abstract: A rigid wave pattern formed on a first side of a substrate in a semiconductor die package. The rigid wave pattern aligns with and overlies the contact fingers formed on the second side of the substrate. The rigid wave pattern includes a first pattern with an etched portion and an unetched portion around the etched portion. When the substrate and dice are encased during the molding process, the rigid wave pattern effectively reduces deformation of and stresses on the dice, therefore substantially alleviating die cracking.

Abstract: A semiconductor device is disclosed including material for absorbing EMI and/or RFI The device includes a substrate (202), one or more semiconductor die (224,225), and molding compound around the one or more semiconductor die (224,225). The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer (210) on the substrate (202). The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

Abstract: The present invention provides a filtering apparatus with a hollow membrane module for draining off debris, comprising: an outer shell having a filtering chamber, a water outlet and a first passage; a filter unit inside the filtering chamber of the outer shell and comprising a hollow membrane module and a sleeve mounted on the hollow member module; wherein the sleeve comprises a plurality of through-holes and two end caps attached onto two lateral sides thereof respectively; and a cover on the outer shell and comprising a second passage. Therefore, when the cover is fastened onto the outer shell, the outer shell is clamped onto the two end caps on the filter unit and the perforations of the two end caps arranged corresponding to the first and second passages such that the draining off debris and dirt off the filtering apparatus via either the first or second passage thereof is achieved.

Abstract: A one-dimensional titanium nanostructure and a method for fabricating the same are provided. A titanium metal reacts with titanium tetrachloride to form the one-dimensional titanium nanostructure on a heat-resistant substrate in a CVD method and under a reaction condition of a reaction temperature of 300-900° C., a deposition temperature of 200-850° C., a flow rate of the carrier gas of 0.1-50 sccm and a reaction time of 5-60 hours. The titanium nanostructure includes titanium nanowires, titanium nanobelts, flower-shaped titanium nanowires, titanium nanorods, titanium nanotubes, and titanium-titanium dioxide core-shell structures. The titanium nanostructure can be densely and uniformly grown on the heat-resistant substrate. The present invention neither uses a template nor uses the complicated photolithographic process, solution preparation process, and mixing-coating process. Therefore, the process scale-up, cost down, and the simplified production process are achieved.

Abstract: A wire bonded structure for a semiconductor device is disclosed. The wire bonded structure comprises a bonding pad; and a continuous length of wire mutually diffused with the bonding pad, the wire electrically coupling the bonding pad with a first electrical contact and a second electrical contact different from the first electrical contact.

Abstract: A compressor section of a gas turbine generally includes a stage of inlet guide vanes positioned adjacent to an inlet of the compressor section and a stage of rotor blades disposed downstream from the inlet guide vanes. A stage of stator vanes is positioned downstream from the stage of rotor blades. The stage of stator blades includes a row of leading guide vanes having a trailing edge. A row of trailing guide vanes coupled to an actuator is disposed between two corresponding adjacent leading guide vanes. Each of the trailing guide vanes includes a trailing edge. The leading edge of each trailing guide vane is disposed upstream of the trailing edge of a corresponding leading guide vane when the trailing guide vane is in an open position and downstream from the trailing edge of the corresponding leading guide vane when the trailing guide vane is in a closed position.

Abstract: A method for fabricating one-dimensional metallic nanostructures comprises steps: sputtering a conductive film on a flexible substrate to form a conductive substrate; placing the conductive substrate in an electrolytic solution, and undertaking electrochemical deposition to form one-dimensional metallic nanostructures corresponding to the conductive film on the conductive substrate. The method fabricates high-surface-area one-dimensional metallic nanostructures on a flexible substrate, exempted from the high price of the photolithographic method, the complicated process of the hard template method, the varied characteristic and non-uniform coating of the seed-mediated growth method.

Abstract: An article of manufacture has a first component configured for use with a turbomachine. The first component is configured for attachment to a second component, and reduces the possibility of attachment with an undesired third component by modification of a. characteristic of the first component. This modification is matched by a complementary characteristic of the second component. The first component has a nominal airfoil profile substantially in accordance with Cartesian coordinate values of X, Y and Z set forth in a scalable table selected from the group consisting of TABLES 1-11. Cartesian coordinate values of X, Y and Z are non-dimensional values convertible to dimensional distances by multiplying by a number. X and Y are coordinates which, when connected by continuing arcs, define airfoil profile sections at each Z height. The airfoil profile sections at each Z height being joined with one another to form a complete airfoil shape.

Abstract: A memory device including a metallic layer shielding electromagnetic radiation and/or dissipating heat, and a method of making the memory device, are disclosed. The metallic layer is formed on a metallic layer transfer assembly. The metallic layer transfer assembly and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the metallic layer is transferred from the shield to the encapsulated memory device.

Abstract: A compressor of a turbine engine, the compressor including stator blades with shrouds, the shrouds being surrounded, at least in part, by rotating structure and forming a shroud cavity therebetween, the compressor including: a plurality of tangential flow inducers disposed within the shroud cavity; wherein each tangential flow inducer comprises a surface disposed on the rotating structure that is configured such that, when rotated, induces a tangential directional component to and/or increases the velocity of a flow of leakage exiting the shroud cavity.

Abstract: An apparatus for processing an audio input signal is provided and includes an audio processing circuit and an audio compressing circuit. The audio processing circuit receives the audio input signal, and enhances a first frequency part of the audio input signal to output a bass-enhancement signal. The audio compressing circuit is coupled to the audio processing circuit, and reduces a gain of a second frequency part of the bass-enhancement signal to output an audio output signal.

Abstract: An article of manufacture having a nominal airfoil profile substantially in accordance with Cartesian coordinate values of X, Y and Z set forth in a scalable table, the scalable table selected from the group of tables consisting of TABLES 1-11, wherein the Cartesian coordinate values of X, Y and Z are non-dimensional values convertible to dimensional distances by multiplying the Cartesian coordinate values of X, Y and Z by a number, and wherein X and Y are coordinates which, when connected by continuing arcs, define airfoil profile sections at each Z height, the airfoil profile sections at each Z height being joined with one another to form a complete airfoil shape.

Abstract: An article of manufacture having a nominal airfoil profile substantially in accordance with Cartesian coordinate values of X, Y and Z set forth in a scalable table, the scalable table selected from the group of tables consisting of TABLES 1-11, wherein the Cartesian coordinate values of X, Y and Z are non-dimensional values convertible to dimensional distances by multiplying the Cartesian coordinate values of X, Y and Z by a number, and wherein X and Y are coordinates which, when connected by continuing arcs, define airfoil profile sections at each Z height, the airfoil profile sections at each Z height being joined with one another to form a complete airfoil shape.

Abstract: A rigid wave pattern formed on a first side of a substrate in a semiconductor die package. The rigid wave pattern aligns with and overlies the contact fingers formed on the second side of the substrate. The rigid wave pattern includes a first pattern with an etched portion and an unetched portion around the etched portion. When the substrate and dice are encased during the molding process, the rigid wave pattern effectively reduces deformation of and stresses on the dice, therefore substantially alleviating die cracking.

Abstract: A method is described for controlling load variations in a gas turbine. The method comprises reducing the flow of gaseous fuel entering the combustor to a predefined minimum value, if an increase is observed in the rotation regime of said turbine above a predefined maximum value and a total reduction in the load, activating a selective feeding sequence of the burners if the turbine is operating in normal functioning or premixed flame mode, modifying the angulation of the adjustable stator vanes, in order to reduce the speed rate of the compressor, and opening one or more anti-surge valves and one or more overboard bleeds, in order to reduce the air flow at the inlet of the combustor.

Abstract: A rigid wave pattern formed on a first side of a substrate in a semiconductor die package. The rigid wave pattern aligns with and overlies the contact fingers formed on the second side of the substrate. The rigid wave pattern includes a first pattern with an etched portion and an unetched portion around the etched portion. When the substrate and dice are encased during the molding process, the rigid wave pattern effectively reduces deformation of and stresses on the dice, therefore substantially alleviating die cracking.

Abstract: A flash memory card and methods of manufacturing same are disclosed. The card includes a semiconductor package fabricated to receive a single-sided or double-sided lid. A surface of the semiconductor package may be formed with holes, trenches and/or pockmarks. After the holes, trenches and/or pockmarks are formed, a lid may be attached to the package surface in an injection molding process. During the injection molding process, the molten plastic flows into the holes, trenches and/or pockmarks to interconnect with the surface of the semiconductor package. Thus, when the molten plastic hardens, the holes, trenches and/or pockmarks ensure that the lid remains firmly attached to semiconductor package.