Abstract: An optical photographing lens assembly includes three lens elements which are, in order from an object side to an image side: a first lens element, a second lens element and a third lens element. Each of the three lens elements of the optical photographing lens assembly has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The object-side surface of the first lens element is concave in a paraxial region thereof, the object-side surface of the first lens element is aspheric and has at least one inflection point, and the object-side surface of the first lens element has at least one critical point in an off-axis region thereof. The optical photographing lens assembly has a total of three lens elements.

Abstract: The disclosure provides a method for manufacturing a separator, comprising the steps of: providing a nonporous precursor substrate; coating a heat-resistant slurry on a surface of the nonporous precursor substrate to form a heat-resistant coating layer, wherein the heat-resistant slurry comprises a binder and a plurality of inorganic particles; and stretching the nonporous precursor substrate with the heat-resistant coating layer formed thereon to generate a separator comprising a porous substrate and a heat-resistant layer; wherein the heat-resistant layer is disposed on the surface of the porous substrate in the range of 10% to 90% of the total surface area of the porous substrate.

Abstract: A photographing optical system includes eight lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element and an eighth lens element. The eight lens elements each have an object-side surface facing toward the object side and an image-side surface facing toward the image side. The first lens element has positive refractive power. The fifth lens element has positive refractive power. The object-side surface of the seventh lens element is convex in a paraxial region thereof. The image-side surface of the eighth lens element is concave in a paraxial region thereof. At least one lens surface of at least one lens element of the photographing optical system has at least one critical point in an off-axis region thereof.

Abstract: A transient voltage suppression device includes at least one diode string, a power clamp device, at least one first bypass diode, and at least two second bypass diodes. The diode string is coupled between a power terminal and a common bus and coupled to an input output (I/O) port. The power clamp device is coupled between the power terminal and the common bus. The first bypass diode is coupled between the common bus and a ground terminal The second bypass diodes are coupled in series, coupled between the common bus and the ground terminal, and coupled to the first bypass diode in reverse parallel. Alternatively, the first bypass diode and the second bypass diodes are replaced with at least one bi-directional electrostatic discharge (ESD) device.

Abstract: An optical image lens assembly includes five lens elements which are, in order from an object side to an image side along an optical path: a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. Each of the five lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The object-side surface of the first lens element is convex in a paraxial region thereof. The image-side surface of the third lens element is concave in a paraxial region thereof. The object-side surface of the fourth lens element is concave in a paraxial region thereof, and the image-side surface of the fourth lens element is convex in a paraxial region thereof.

Abstract: A semiconductor device includes first and second semiconductor fins extending from a substrate and a source/drain region epitaxially grown in recesses of the first and second semiconductor fins. A top surface of the source/drain region is higher than a surface level with top surfaces of the first and second semiconductor fins. The source/drain region includes a plurality of buffer layers. Respective layers of the plurality of buffer layers are embedded between respective layers of the source/drain region.

Abstract: An image lens assembly includes, in order from an object side to an image side along an optical path, a first lens group, a second lens group, a third lens group and a fourth lens group. A total number of lens elements in the image lens assembly is seven. The first lens group includes a first lens element with positive refractive power and a second lens element with negative refractive power. Each of the second lens group and the third lens group includes at least one lens element. The fourth lens group includes a seventh lens element. When the image lens assembly is focusing or zooming, a relative position between the first lens group and an image surface is fixed, a relative position between the fourth lens group and the image surface is fixed, and the second lens group and the third lens group move along the optical axis.

Abstract: A power supplying device comprising a battery, a charging circuit and a DC-AC conversion circuit is provided. The charging circuit is electrically coupled to an AC power source and configured to charge the battery. The DC-AC conversion circuit is electrically coupled to the battery and configured to supply an AC output. When the power supplying device is powered on, both of the charging circuit and the DC-AC conversion circuit are enabled.

Abstract: A cooling device includes a partitioning board abutting inner faces of two boards, respectively. A chamber is defined between the partitioning board and one of the two boards. Another chamber is defined between the partitioning board and another of the two boards and intercommunicates with the chamber via an intercommunication port and a backflow port of the partitioning board. A pump drives a working fluid to circulate in the two chambers. Two welding channels are formed on outer faces of the two boards and surround the two chambers, respectively. The smallest distance between a channel bottom face of each annular welding channel and the inner face of a respective board having the annular welding channel is smaller than that between the inner and outer faces of the respective board. The two boards are coupled to the partitioning board along the annular welding channels by laser welding.

Abstract: Examples of an alloy injection molded liquid metal substrate are described. In an example, an alloy injection molded liquid metal substrate includes a liquid metal substrate and an alloy injection molded on a first surface of the liquid metal substrate.

Abstract: An imaging lens system includes five lens elements, which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. At least one of an object-side surface and an image-side surface of the fifth lens element has at least one inflection point. The object-side surface and the image-side surface of the fifth lens element are both aspheric.

Abstract: A photographing lens assembly includes, in order from an object side to an image side: a first, a second, a third, a fourth, a fifth and a sixth lens elements. The first lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof, wherein the object-side surface has at least one convex critical point in an off-axis region thereof. The third lens element has an image-side surface being convex in a paraxial region thereof. The fourth lens element has positive refractive power. The fifth lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof, and an image-side surface being convex in a paraxial region thereof. The sixth lens element has an image-side surface being concave in a paraxial region thereof, wherein the image-side surface has at least one convex critical point in an off-axis region thereof.

Abstract: An all-MOSFET voltage reference circuit includes a first cascaded branch configured to generate a bias current and composed of a first current source and a diode-connected first N-type transistor connected at a first interconnected node; a second cascaded branch composed of a second current source, a diode-connected second N-type transistor and a third N-type transistor connected with the second N-type transistor disposed in between, wherein the second N-type transistor and the third N-type transistor are connected at a second interconnected node; a third cascaded branch composed of a third current source and a diode-connected fourth N-type transistor connected at an output node that provides a reference voltage; and an amplifier with a non-inverting node coupled to the first interconnected node and an inverting node coupled to the second interconnected node. A threshold voltage of the third N-type transistor is larger than a threshold voltage of the second N-type transistor.

Abstract: A photographing optical system includes eight lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element and an eighth lens element. The eight lens elements each have an object-side surface facing toward the object side and an image-side surface facing toward the image side. The first lens element has positive refractive power. The fifth lens element has positive refractive power. The object-side surface of the seventh lens element is convex in a paraxial region thereof. The image-side surface of the eighth lens element is concave in a paraxial region thereof. At least one lens surface of at least one lens element of the photographing optical system has at least one critical point in an off-axis region thereof.

Abstract: A semiconductor structure includes a semiconductor fin disposed over a substrate, a metal gate stack disposed over the semiconductor fin, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin and adjacent to the metal gate stack, and a dielectric feature embedded in the semiconductor fin, where a bottom surface of the epitaxial S/D feature is disposed on a top surface of the dielectric feature, and where sidewalls of the epitaxial S/D feature extend to define sidewalls of the dielectric feature.

Abstract: An electronic device includes at least two image capturing units which face the same side. The at least two image capturing units include a first image capturing unit and a second image capturing unit. The first image capturing unit includes an optical image system and a first image sensor. The optical image system includes a first lens element and an image surface. The first image sensor is disposed on the image surface of the optical image system thereof and has a first resolution of at least 60 megapixels. The second image capturing unit includes an optical image system and a second image sensor. The optical image system includes a first lens element and an image surface. The second image sensor is disposed on the image surface of the optical image system thereof and has a second resolution of at least 40 megapixels.

Abstract: A vertical bipolar transistor device is disclosed. The vertical bipolar transistor device includes a heavily-doped semiconductor substrate, a first semiconductor epitaxial layer, at least one first doped well, and an external conductor. The heavily-doped semiconductor substrate and the first doped well have a first conductivity type. The first semiconductor epitaxial layer has a second conductivity type. The first semiconductor epitaxial layer is formed on the heavily-doped semiconductor substrate. The first doped well is formed in the first semiconductor epitaxial layer. The external conductor is arranged outside the heavily-doped semiconductor substrate and the first semiconductor epitaxial layer and electrically connected to the heavily-doped semiconductor substrate and the first semiconductor epitaxial layer.

Abstract: The present disclosure is drawn to covers for electronic devices. In one example, a cover for an electronic device can include an aluminum or aluminum alloy cover frame having an opening. A magnesium or magnesium alloy cover panel supported by the aluminum or aluminum alloy cover frame within or over the opening. A protective coating can be over a surface of the aluminum or aluminum alloy cover frame and a surface of the magnesium or magnesium alloy cover panel. A chamfered edge can include a chamfer at an edge of the aluminum or aluminum alloy cover frame. The chamfer can expose the aluminum or aluminum alloy cover frame beneath the protective coating, and the chamfer at the same time does not expose the magnesium or magnesium alloy cover panel.

Abstract: An electronic device and a manufacturing method for the electronic device are provided. The electronic device includes a display structure layer and a light sensing panel. The light sensing panel includes a first substrate; a second substrate, wherein the second substrate is disposed between the first substrate and the display structure layer; a plurality of sensing units, disposed on the first substrate and between the first substrate and the second substrate; and an optical structure layer, disposed on the second substrate and between the second substrate and the display structure layer.

Abstract: A semiconductor device includes first and second semiconductor fins extending from a substrate and a source/drain region epitaxially grown in recesses of the first and second semiconductor fins. A top surface of the source/drain region is higher than a surface level with top surfaces of the first and second semiconductor fins. The source/drain region includes a plurality of buffer layers. Respective layers of the plurality of buffer layers are embedded between respective layers of the source/drain region. Each of the plurality of buffer layers may have an average thickness in a range of about 2 ? to about 30 ?.