Abstract: A flexible sealing structure is provided. The flexible sealing structure includes a flexible sealing member and a membrane electrode assembly. The flexible sealing member includes a first flexible sealing film and a second flexible sealing film, and a hollow region is formed in a center of the flexible sealing member. The membrane electrode assembly is located between the first flexible sealing film and the second flexible sealing film. A side surface of the membrane electrode assembly is even. The membrane electrode assembly has a first surface and a second surface. The hollow region of the flexible sealing member exposes a portion of the first surface and a portion of the second surface of the membrane electrode assembly.

Abstract: A semiconductor device includes first and second semiconductor fins extending from a substrate and a source/drain region epitaxially grown in recesses of the first and second semiconductor fins. A top surface of the source/drain region is higher than a surface level with top surfaces of the first and second semiconductor fins. The source/drain region includes a plurality of buffer layers. Respective layers of the plurality of buffer layers are embedded between respective layers of the source/drain region. Each of the plurality of buffer layers may have an average thickness in a range of about 2 ? to about 30 ?.

Abstract: An imaging lens system includes five lens elements, which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. At least one of an object-side surface and an image-side surface of the fifth lens element has at least one inflection point. The object-side surface and the image-side surface of the fifth lens element are both aspheric.

Abstract: A photographing lens assembly includes, in order from an object side to an image side: a first, a second, a third, a fourth, a fifth and a sixth lens elements. The first lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof, wherein the object-side surface has at least one convex critical point in an off-axis region thereof. The third lens element has an image-side surface being convex in a paraxial region thereof. The fourth lens element has positive refractive power. The fifth lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof, and an image-side surface being convex in a paraxial region thereof. The sixth lens element has an image-side surface being concave in a paraxial region thereof, wherein the image-side surface has at least one convex critical point in an off-axis region thereof.

Abstract: Examples of a cover for a device are described herein. The cover includes a substrate to be placed in proximity of a heat source of a device. In an example, a heat resistant layer is applied over a surface of the substrate to insulate heat generated by the heat source. Further, a top layer is applied over one of the heat resistant layer and another surface of the substrate, which is opposite to the surface having the heat resistant layer. The top layer provides at least one of chemical resistant properties and aesthetic properties.

Abstract: A semiconductor structure includes a first region. The first region includes at least three first gate structures separate one from another and adjacent to each other and at least three second gate structures separate one from another and adjacent to each other. The first gate structures are further away from each other than the second gate structures. The first region further includes first epitaxial semiconductor features proximate the first gate structures and second epitaxial semiconductor features proximate the second gate structures. A first distance from the first epitaxial semiconductor features to the respective first gate structures is smaller than a second distance from the second epitaxial semiconductor features to the respective second gate structures.

Abstract: A high voltage MOS device includes: a well, a body region, a gate, a source, plural body contact regions and a drain. The plural body contact regions are formed in the body region, wherein each of the body contact region is located beneath the top surface and contacts the top surface in the vertical direction, and is in contact or not in contact with the gate in the lateral direction. The plural body contact regions are arranged substantially in parallel in the width direction and any two neighboring body contact regions are not in contact with each other in the width direction. The gate includes a poly-silicon layer which serves as the only electrical contact of the gate, and every part of the poly-silicon layer is the first conductivity type.

Abstract: An error-handling method, an associated data storage device and the controller thereof are provided. The error-handling method may include: uploading an error-handling program to a buffer memory equipped with error correction code (ECC) protection capability; in response to at least one error, interrupting execution of a current procedure and activating an interruption service; executing the error-handling program on the buffer memory; disabling a transmission interface circuit; resetting at least one hardware engine and at least one NV memory element; performing cache rearrangement regarding a data cache within the data storage device, and programming rearranged cache data into the NV memory element, to perform data recovery; and through activating a watchdog module and the transmission interface circuit and relinking with a host device, completing soft reset to make the data storage device operate normally again.

Abstract: Electronic devices comprising a substrate at least partially enclosed by an energy absorbing material are disclosed herein. The energy absorbing material can integrally or removably attach to the substrate. The substrate can be carbon fiber, glass, ceramic, metal, composite, or mixtures thereof. The energy absorbing material can comprise at least one thermoplastic polymer.

Abstract: The invention provides enrichment platform devices for size-based capture of particles in solution. The enrichment platform device is useful for label-free capture of any particle. The invention relates to enrichment platform devices using nanowires and vertically aligned carbon nanotubes. The invention provides methods for making the enrichment platform devices. The invention provides methods for using the enrichment platform devices for filtering particles, capturing particles, concentrating particles, and releasing viable particles.

Abstract: An imaging lens system includes five lens elements, which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. At least one of an object-side surface and an image-side surface of the fifth lens element has at least one inflection point. The object-side surface and the image-side surface of the fifth lens element are both aspheric.

Abstract: A floating base silicon controlled rectifier is provided, which at least comprises a first conductivity type layer; a second conductivity type well formed in the first conductivity type layer; a first conductivity type heavily doped region coupled to a first node and formed in the second conductivity type well; and a second conductivity type heavily doped region coupled to a second node and formed in the first conductivity type layer. The first conductivity type and the second conductivity type are opposite. When the first conductivity type is N type, the second conductivity type is P type. Alternatively, when the first conductivity type is P type, the second conductivity type is N type. By employing the proposed present invention, the floating base silicon controlled rectifier acts as a forward diode, and an input capacitance can be greatly reduced.

Abstract: A lateral transient voltage suppressor device is provided, comprising a doped substrate, a lateral clamping structure disposed on the doped substrate, a buried doped layer disposed between the doped substrate and the lateral clamping structure for isolation, at least one diode module, and at least one trench arranged in the doped substrate, having a depth not less than that of the buried doped layer, and being disposed between the lateral clamping structure and the at least one diode module for electrical isolation. The doped substrate and the buried doped layer have opposite conductivity types such that the doped substrate is electrically floating. The buried doped layer can be further disposed to separate the diode module from the doped substrate. By employing the proposed invention, the lateral transient voltage suppressor device is advantageous of maintaining both a lower clamping voltage as well as a reduced dynamic resistance.

Abstract: A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure and a dielectric layer disposed on an upper surface of the isolation insulating layer. Both the first fin structure and the second fin structure are disposed over the substrate, and extend in a first direction in plan view. The gate structure is disposed over parts of the first and second fin structures, and extends in a second direction crossing the first direction. The first and second fin structures not covered by the gate structure are recessed below the upper surface of the isolation insulating layer. The source/drain structure is formed over the recessed first and second fin structures. A void is formed between the source/drain structure and the dielectric layer.

Abstract: An imaging lens system includes, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element and a sixth lens element. The first lens element with negative refractive power has an image-side surface being concave in a paraxial region thereof. The second lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof. The third lens element with positive refractive power has an image-side surface being convex in a paraxial region thereof. The fourth lens element has positive refractive power. The fifth lens element with negative refractive power has an image-side surface being concave in a paraxial region thereof. The sixth lens element with positive refractive power has an object-side surface being convex in a paraxial region thereof.

Abstract: A photographing optical lens assembly includes seven lens elements, the seven lens elements are, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element, wherein the first lens element has positive refractive power, the fifth lens element with negative refractive power has image-side surface being concave in a paraxial region thereof, the sixth lens element has an image-side surface being convex in a paraxial region thereof, and the seventh lens element has an image-side surface being concave in a paraxial region thereof, wherein the image-side surface of the seventh lens element includes at least one convex critical point in an off-axis region thereof.

Abstract: A photographing optical lens assembly includes seven lens elements, the seven lens elements being, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element. Each of the seven lens elements includes an object-side surface facing towards the object side and an image-side surface facing towards the image side. The image-side surface of the seventh lens element is concave in a paraxial region thereof and includes at least one inflection point in an off-axis region thereof.

Abstract: An integrated circuitry includes a first circuit, a second circuit, and a voltage conversion circuit. A first power supply positive terminal of the first circuit is electrically coupled to a power source. The second circuit is electrically coupled in series with the first circuit and the power source. A second power supply positive terminal of the second circuit is electrically coupled to a first power supply negative terminal of the first circuit. The voltage conversion circuit is electrically coupled between the first circuit and the second circuit so as to receive a signal from the first circuit or the second circuit. The voltage conversion circuit converts a voltage value of the signal according to a first low potential signal of the first power supply negative terminal and a second low potential signal of a second power supply negative terminal.

Abstract: An optical imaging lens assembly includes five lens elements, which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element with positive refractive power has an object-side surface being convex in a paraxial region thereof. The third lens element has negative refractive power. The fifth lens element has negative refractive power.

Abstract: Various examples provide a method of making a hydrophobic surface for an object. According to the method, a hydrophobic coating may be applied to an original surface of the object. A microstructure may be formed on the original surface of the object. The hydrophobic surface of the object may be obtained with the microstructure submerged by the hydrophobic coating. The microstructure may be a rough structure including micro-sired portions, and may have greater hardness than the hydrophobic coating.