Abstract: A photographing optical lens assembly includes seven lens elements, the seven lens elements are, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element, wherein the first lens element has positive refractive power, the fifth lens element with negative refractive power has image-side surface being concave in a paraxial region thereof, the sixth lens element has an image-side surface being convex in a paraxial region thereof, and the seventh lens element has an image-side surface being concave in a paraxial region thereof, wherein the image-side surface of the seventh lens element includes at least one convex critical point in an off-axis region thereof.

Abstract: An image lens assembly includes four lens groups: a first lens group, a second lens group, a third lens group and a fourth lens group along an optical path. The four lens groups include nine lens elements: a first lens element with positive refractive power, a second lens element with negative refractive power, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element, an eighth lens element and a ninth lens element along the optical path. At least one lens element of the image lens assembly has at least one inflection point. At least five lens elements of the image lens assembly are made of plastic material. When focusing or zooming, the first lens group and the fourth lens group stay stationary, while the second lens group and the third lens group move along an optical axis.

Abstract: A vertical bipolar transistor device includes a heavily-doped semiconductor substrate, a first semiconductor epitaxial layer, at least one doped well, an isolation structure, and an external conductor. The heavily-doped semiconductor substrate and the doped well have a first conductivity type, and the first semiconductor epitaxial layer has a second conductivity type. The first semiconductor epitaxial layer is formed on the heavily-doped semiconductor substrate. The doped well is formed in the first semiconductor epitaxial layer. The isolation structure, formed in the heavily-doped semiconductor substrate and the first semiconductor epitaxial layer, surrounds the first semiconductor epitaxial layer and the at least one doped well. The external conductor is arranged outside the first semiconductor epitaxial layer and the doped well and electrically connected to the first semiconductor epitaxial layer and the doped well.

Abstract: A vertical bipolar transistor device is disclosed. The vertical bipolar transistor device includes a heavily-doped semiconductor substrate, a first semiconductor epitaxial layer, at least one first doped well, and an external conductor. The heavily-doped semiconductor substrate and the first doped well have a first conductivity type. The first semiconductor epitaxial layer has a second conductivity type. The first semiconductor epitaxial layer is formed on the heavily-doped semiconductor substrate. The first doped well is formed in the first semiconductor epitaxial layer. The external conductor is arranged outside the heavily-doped semiconductor substrate and the first semiconductor epitaxial layer and electrically connected to the heavily-doped semiconductor substrate and the first semiconductor epitaxial layer.

Abstract: A proton-conductive membrane includes a hydrophobic organic polymer and a hydrophilic proton-conductive component. The hydrophilic proton-conductive component includes one of an urea-containing material and a complex formed from an acidic substance and a basic substance, and a combination thereof. The hydrophilic proton-conductive component is present in an amount ranging from 23 parts by weight to 70 parts by weight based on 100 parts by weight of the proton-conductive membrane.

Abstract: An optical imaging module includes six lens elements, the six lens elements being, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element and a sixth lens element. The first lens element has negative refractive power. The second lens element has an image-side surface being concave. The third lens element has an image-side surface being convex. The fourth lens element has positive refractive power. The fifth lens element with negative refractive power has an object-side surface being concave and an image-side surface being convex. The sixth lens element has an image-side surface being concave, wherein an object-side surface and the image-side surface of the sixth lens element are both aspheric, and the image-side surface of the sixth lens element includes at least one inflection point.

Abstract: An imaging lens system includes four lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element and a fourth lens element, and each of the four lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The first lens element has negative refractive power. The fourth lens element has positive refractive power, and the image-side surface of the fourth lens element is convex in a paraxial region thereof. At least one lens element of the imaging lens system has at least one lens surface having at least one inflection point.

Abstract: The present disclosure is drawn to covers for electronic devices. In one example, a cover for an electronic device can include an enclosure with a light metal substrate joined with an insert molding plastic part, and a protective treatment layer on the light metal substrate and the insert molding plastic part. A transparent primer coating on the protective treatment layer, and a paint coating on the transparent primer coating. A milled edge along the insert molding plastic part, wherein the milled edge cuts through the paint coating to expose the transparent primer coating.

Abstract: A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.

Abstract: A system for sorting moving objects is disclosed. The system comprises a light source, an image capturing device, a controlling and processing device, and an object sorting device. Particularly, the controlling and processing device is configured to decide a first setting parameter so as to apply a parameter adjustment to the light source, and is also configured to decide a second setting parameter so as to apply an parameter adjustment to the image capturing device. After deciding an object classifier based on the first setting parameter, the second setting parameter, and object images received from the image capturing device, the object sorting device is controlled to apply an object sorting process to the of objects that are delivered by the belt conveyor, thereby sorting the objects into at least two object group consisting of a normal object group and a defective object group.

Abstract: An aromatic liquid crystal polyester, having repeating units represented by formulae (1) and (2), respectively: where R?, Ar1, Ar2, Ar3, X, Y1, Y2 and Z are those as defined in the specification. Also, a liquid crystal polyester composition including the aromatic liquid crystal polyester and a solvent. The composition has an improved viscosity stability. Also, a liquid crystal polyester film prepared from the liquid crystal polyester composition and a method for manufacturing the same. The liquid crystal polyester film according to the present disclosure has excellent properties such as a low hygroscopicity and a low dissipation factor (Df).

Abstract: The present subject matter relates to Nickel-free (Ni-free) sealing of anodized metal substrates. In an example mentation of the present subject matter, an anodized metal substrate is disposed with a first layer of a Ni-free sealing material over a surface of the anodized metal substrate. Further, a second layer of a second sealing material is disposed atop the first layer to sandwich the first layer of Ni-free sealing material between the surface of the anodized metal substrate and the second layer, to form a sealed metal substrate.

Abstract: The application discloses examples of a device housing of an electronic device comprising a magnesium-alloy substrate. The device housing further comprising a treatment layer applied over the magnesium-alloy substrate and a metallic coating layer applied over the treatment layer to provide a metallic luster. Further, a paint coating layer is disposed over a first portion of the metallic coating layer. Further, a top coating layer is applied over the paint coating layer and a visible second portion of the metallic coating layer.

Abstract: An optimized near-field communication (NFC) antenna structure for reduced coupling with a wireless charging (WLC) coil of a computing device includes the WLC coil and an NFC coil that at least partially overlaps the WLC coil. The NFC coil of the optimized structure may include two sections that partially overlap the WLC coil and meet, over the WLC coil, at an angle to reduce coupling between the WLC coil and the NFC coil. The angled shape of the NFC coil may be implemented in various shapes resulting in one or more angles such that the first and second sections of the NFC coil are angled with respect to one another over the WLC coil. The combination or shape of the angles of the NFC coil, as well as NFC coil position relative to the WLC coil, may be optimized to reduce coupling between the NFC coil and the WLC coil.

Abstract: An image capturing optical lens assembly includes three lens elements, the three lens elements being, in order from an object side to an image side along an optical path, a first lens element, a second lens element and a third lens element. Each of the three lens elements has an object-side surface towards the object side and an image-side surface towards the image side. The second lens element has negative refractive power. The object-side surface of the third lens element is concave in a paraxial region thereof, and the image-side surface of the third lens element is convex in a paraxial region thereof. The image capturing optical lens assembly has a total of three lens elements.

Abstract: A structure of semiconductor device is provided. The structure includes a first bonding pattern, formed on a first substrate. A first grating pattern is disposed on the first substrate, having a plurality of first bars extending along a first direction. A second bonding pattern is formed on a second substrate. A second grating pattern, disposed on the second substrate, having a plurality of second bars extending along the first direction. The first bonding pattern is bonded to the second bonding pattern. One of the first grating pattern and the second grating pattern is stacked over and overlapping at the first direction with another one of the first grating pattern and the second grating pattern. A first gap between adjacent two of the first bars is different from a second gap between adjacent two of the second bars.

Abstract: An imaging lens system includes four lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element and a fourth lens element, and each of the four lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The first lens element has negative refractive power. The fourth lens element has positive refractive power, and the image-side surface of the fourth lens element is convex in a paraxial region thereof. At least one lens element of the imaging lens system has at least one lens surface having at least one inflection point.

Abstract: Examples of shutter assembly are described herein. In an example, the shutter assembly includes an opening having a magnetic rubber-based shutter disposed in the opening. The magnetic rubber-based shutter is slidable along a length of the opening to selectively cover and expose the camera.

Abstract: The invention provides enrichment platform devices for size-based capture of particles in solution. The enrichment platform device is useful for label-free capture of any particle. The invention relates to enrichment platform devices using nanowires and vertically aligned carbon nanotubes. The invention provides methods for making the enrichment platform devices. The invention provides methods for using the enrichment platform devices for filtering particles, capturing particles, concentrating particles, and releasing viable particles.