Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract: Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract: A lithium ion secondary battery includes a binder that binds an active material to a current collector in the positive electrode or negative electrodes or both. The binder contains a base material including a resin having a benzene ring, and a polyacene additive selected from the group consisting of naphthalene, anthracene, tetracene, and derivatives thereof. The active material is a carbonaceous material or a lithium-containing composite oxide having a crystal structure in which a distance between nearest oxygen atoms is 0.19 to 0.29 nm. Adhesion of the binder to the active material during the manufacturing of the lithium ion secondary battery is led to a closest-packed crystal plane in the crystal structure of the active material, so that inhibition of moving of lithium ions in and out of the active material due to the binder may be reduced.

Abstract: Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract: A lithium ion secondary battery includes a positive electrode capable of occluding and discharging lithium ions, a negative electrode capable of occluding and discharging the lithium ions, and a nonaqueous electrolyte including a lithium salt, and being reversively charged/discharged. The positive electrode includes a metal plate, a metal film formed on a surface of the metal plate, and a positive electrode active material layer, the metal film includes one or more metals selected from the group consisting of ruthenium, osmium, palladium, and platinum having a orientation, the positive electrode active material layer is a compound expressed by the following expression: LiCoxNi1-xO2, (where 0?x?1) and is epitaxially grown and formed on a surface of the metal film, and the positive electrode active material is formed such that a c axis of a crystal structure of the positive electrode active material is perpendicular to the metal film.

Abstract: Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.

Abstract: Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract: A semiconductor device in which an adhesion between a lead and a sealing body (mold sealing body) is improved to prevent the peering is provided. In a semiconductor device having a semiconductor chip, a plurality of leads electrically connected to the semiconductor chip and mainly made of metal and a sealing body for sealing the semiconductor chip, in order to improve the adhesion between the lead and the sealing body (mold sealing body), a material combination with good lattice matching is used as a combination of a surface material of the lead and a material of the sealing body, and the sealing body mainly made of acene is used.

Abstract: A magnetic reproduction head includes a lower magnetic shield layer, an upper magnetic shield layer, a magnetoresistive film formed between the lower and the upper magnetic shield layers, a refill film in an element height direction disposed in contact with a surface opposite a floating surface of the magnetoresistive film, and a refill film in a track width direction disposed on a side wall surface of the magnetoresistive film. The magnetoresistive film is a tunneling magnetoresistive film including a free layer, an insulating barrier layer, and a fixed layer. The insulating barrier layer is one of a magnesium oxide film, an aluminum oxide film, and a titanium oxide film which contains at least one of nitrogen and silicon.

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract: Provided is a lithium ion battery having a long service life by improving an adhesion strength between a binder resin and a metal foil. A binder resin, which is a compound having a chemical structure that contains a polyvinylidene fluoride molecular chain, a six-membered ring such as a cyclohexane ring, and an end group selected from the group consisting of SiX3, S, N, GeX3, and TiX3 (wherein X is a functional group that undergoes a condensation reaction), wherein the six-membered ring is disposed in a region between the polyvinylidene fluoride molecular chain and the end group, is mixed with an active material and applied to a metal foil, and the binder resin is chemically bonded to metal atoms such as copper atoms on the surface of the metal foil.

Abstract: Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.

Abstract: There is provided a semiconductor device which has been improved in adhesion between leads and a sealing resin (molding resin), and thus does not undergo peeling therebetween, and has high reliability.

Abstract: A magnetoresistive head is provided with high reliability and produced at a high yield rate. The magnetoresistive head includes a lower magnetic shield layer, an upper magnetic shield layer, a magnetoresistive effect film, and means for causing a current to flow in the direction of the thickness of the magnetoresistive effect film. The magnetoresistive effect film is provided between the lower magnetic shield layer and the upper magnetic shield layer. The magnetoresistive effect film is composed of a fixed layer, a non-magnetic layer, an insulating barrier layer and a free layer. The four layers of the magnetoresistive effect film are formed in this order. The insulating barrier layer is an oxide layer containing at least one of titanium and nickel.

Abstract: Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.

Abstract: Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.