Abstract: The invention describes a process for producing P1,P4-di(uridine-5′-)tetraphosphate (U2P4) or a salt thereof from uridine 5′-monophosphate (UMP); wherein the process comprises at least one of the steps (a) and (b): (a) adding UMP diphenylphosphate (UMP-DPP) in divided portions during a step of reacting UMP-DPP with an organic alkali salt of pyrophosphate (PP1) to produce a reaction mixture; wherein at least one equivalent of a first base is present during one portion of the reaction; (b) reacting UMP-DPP with a PPi-organic alkali salt in the presence of at least one equivalent of a second base to produce a reaction mixture, wherein the first base and the second base may be the same or different; (c) subsequently adding water to the reaction mixture to produce an aqueous reaction mixture; and optionally (d) adding an alkali to the aqueous reaction mixture.

Abstract: A honeycomb filter comprises a honeycomb structure having a large number of through channels formed in the axial direction and partitioned by porous partition walls, wherein specified through channels are plugged only on one end face at the same side out of two end faces. This honeycomb filter shows less pressure loss, and is hardly clogged with solids that cannot be extinguished by combustion such as ash, iron oxide, and the like. Furthermore, an unwanted discharge of particulates deposited in through channels of the filter in a larger amount due to pulsation even under conditions that the exhaust gas from an engine greatly pulsates can be effectively suppressed. This filter is also usable as an element for exhaust gas purification system, or a part of composite filter in addition to the use for an exhaust gas purification filter for gasoline engines. The production method therefor is also disclosed.

Abstract: Wirings connected to a gate electrode of a slave switch circuit cell for substrate bias circuits are respectively electrically connected to a wiring for a power supply potential and a wiring for a reference potential. Thus, the switch operation of the slave switch circuit cell is made invalid. Wirings connected to n wells of respective circuit cells are electrically connected to a wiring for the power supply potential, and wirings connected to p wells of the respective circuit cells are electrically connected to the wiring. Thus, the n wells are fixed to the power supply potential, and the p wells are fixed to the reference potential.

Abstract: Power wastefully consumed in a memory in standby state is reduced without lowering the speed of operation of reading data out of the memory. A semiconductor integrated circuit has a memory which can enter active state or standby state, and the memory has voltage generation circuits for bit lines and source lines with which memory cells are connected. The voltage generation circuits make the potential of the bit lines and the potential of the source lines equal to each other in response to an instruction to transition from active state to standby state. The voltage generation circuits produce a potential difference between the bit lines and the source lines in response to an instruction to transition from standby state to active state. In standby state, the potential of the bit lines and that of the source lines are equal to each other. Therefore, sub-threshold leakage does not occur between the source and drain of each memory cell. In active state, the source line potential is not varied.

Abstract: A semiconductor integrated circuit makes use of nonvolatile memory cells of a fuse circuit connected to a dedicated signal line without using a nonvolatile memory intended for general purpose use, which is connected to a common bus, in order to store control information for defect relief and the like of circuit modules. The reliability of storage of the control information is not limited to the performance of storage of information in the nonvolatile memory intended for general purpose use, and the reliability of storage of the control information can be easily enhanced. Since a second wiring used in the transfer of the control information is of a wiring dedicated for its transfer, it needs not perform switching between connections to circuit portions used for actual operations in the circuit modules and their control. A circuit configuration for delivering the control information can be simplified.

Abstract: There are disclosed a method for plugging a cell of a honeycomb structure and a method for manufacturing a honeycomb plugged structure. By the methods, plug portion having arbitrary depth and/or shape can exactly and relatively easily be formed. There is disclosed the method for plugging cell 3 of a honeycomb structure 1 having a plurality of cells surrounded by partition walls and extending through an axial direction. In the method for plugging the cells of the honeycomb structure, plugging member 6 molded in predetermined shape is inserted into the cell 3, and the plugging member 6 is bonded to the peripheral partition walls 3 to form plug portions. There is also provided the method for manufacturing the honeycomb plugged structure, including the steps of: plugging at least a certain cells of the honeycomb structure by this plugging method.

Abstract: There is disclosed a honeycomb structural body (1) comprising: a plurality of through channels (3) formed by a plurality of partition walls (2) in an axial direction. The honeycomb structural body (1) is constituted of a plurality of honeycomb sections (10, 11) formed of materials having different characteristics, and the plurality of honeycomb sections (10, 11) are directly bonded to and integrated with one another. According to the structure of this honeycomb structural body, different high performances can be fulfilled in accordance with requests for each honeycomb section. Additionally, there is not any local stress concentration by shape mismatch of each honeycomb section or presence of a bond material, and reliability at the time of use, and the like can be enhanced.

Abstract: There is provided a honeycomb structure usable in a filter for trapping/collecting particulates included in exhaust gas and in which ashes deposited inside can be removed without requiring any special mechanism or apparatus or without detaching the filter from an exhaust system. The honeycomb structure includes: a plurality of through channels 9 separated by porous partition walls 7 and extending in the axial direction of the honeycomb structure; and plugging portions 11 for plugging one end of each of predetermined through channels 9a and an opposite end of each of the rest of through channels 9b in a checkered flag pattern, alternately. In the honeycomb structure, at least one slit 15 per through channel is formed in the vicinity of the plugging portions 11 of the partition walls 7 surrounding the respective through channels 9b.

Abstract: There is disclosed a honeycomb structure usable as a filter for trapping/collecting particulates included in an exhaust gas; and the structure can remove ashes deposited inside without requiring any special mechanism or apparatus or without being detached from the exhaust system. The structure includes: a plurality of through channels 9 extending to the axial direction of the honeycomb structure, porous partition walls 7 separating through channels one another, and plugging portions 11 plugging predetermined through channels 9a at one end and the rest of through channels 9b at other end opposite to the plugged end of the predetermined through channels, wherein a through-hole is formed in at least a part of the plugging portion, and its diameter is 0.2 mm or more, but not more than a value which is smaller between 1 mm and 75% of a diameter of an inscribed circle of the through channel.

Abstract: There is disclosed a honeycomb structure which can be used as a filter for trapping/collecting particulates included in an exhaust gas and in which it is possible to remove ashes deposited inside without requiring any special mechanism or apparatus or without being detached from the exhaust system. The structure comprises a plurality of through channels 9 extending to an axial direction of a honeycomb structure, porous partition walls 7 separating through channels one another, and plugging portions 11; said plugging portion plugging predetermined through channels 9a at one end and the rest of through channels 9b at other end opposite to the plugged end of the predetermined through channels, wherein at least a part of predetermined crossing portions of the porous partition walls is discontinued to form a void portion 17 in each of the predetermined crossing portions.

Abstract: There are provided a plurality of bridge circuits which convert the test data information from a common test bus connected to a plurality of memories of different access data widths and address decode logics to the inherent access data widths of each memory and also convert the test address information from the common test bus to the inherent bit format of each memory to supply the result to the corresponding memory. The test address information is supplied in parallel from the common test bus to a plurality of memories to realize the parallel tests. Accordingly, the test data information can be supplied in parallel to a plurality of memories of different data widths and the address scan direction in the respective memories for the test address information can be uniformed to the particular direction depending on the inherent bit format. Thereby, the memory test efficiency by the match pattern for a plurality of on-chip memories can be improved.

Abstract: A semiconductor integrated circuit makes use of nonvolatile memory cells of a fuse circuit connected to a dedicated signal line without using a nonvolatile memory intended for general purpose use, which is connected to a common bus, in order to store control information for defect relief and the like of circuit modules. The reliability of storage of the control information is not limited to the performance of storage of information in the nonvolatile memory intended for general purpose use, and the reliability of storage of the control information can be easily enhanced. Since a second wiring used in the transfer of the control information is of a wiring dedicated for its transfer, it needs not perform switching between connections to circuit portions used for actual operations in the circuit modules and their control. A circuit configuration for delivering the control information can be simplified.

Abstract: A honeycomb structure includes multiple honeycomb segments joined by means of a bonding material. Each of the honeycomb segments has a plurality of passages which are defined by partition walls and extend in an axial direction, Flatness of outer walls to be joining planes of the honeycomb segments is 0.2 mm or more. The honeycomb structure is superior in durability, by which a honeycomb segment does not shift due to vibration or exhaust back pressure in use.

Abstract: A process of producing a high toughness iron-based amorphous alloy strip, using a single roll liquid quenching method, the strip having a thickness of more than 55 &mgr;m up to 100 &mgr;m and a width of 20 mm or more and having a fracture strain &egr;f satisfying the relationship &egr;f>0.1 where &egr;f=t/(D−t), t=thickness of the strip, and D=bent diameter upon fracture, &egr;f being determined by bending the strip with a free cooling surface thereof facing outward, the process comprising the steps of: ejecting a molten metal alloy through a nozzle; applying the ejected molten metal alloy to a surface of a rotating roll; allowing the applied molten metal alloy to be quenched by the roll surface to form an amorphous strip of the metal alloy, the strip being quenched at a cooling rate, determined at a free surface thereof, of 103° C./sec or more in a temperature range of from 500° C. to 200° C.

Abstract: A process of producing a high toughness iron-based amorphous alloy strip, using a single roll liquid quenching method, the strip having a thickness of more than 55 &mgr;m up to 100 &mgr;m and a width of 20 mm or more and having a fracture strain &egr;f satisfying the relationship &egr;f>0.1 where &egr;f=t/(D-t), t=thickness of the strip, and D=bent diameter upon fracture, &egr;f being determined by bending the strip with a free cooling surface thereof facing outward, the process comprising the steps of: ejecting a molten metal alloy through a nozzle; applying the ejected molten metal alloy to a surface of a rotating roll; allowing the applied molten metal alloy to be quenched by the roll surface to form an amorphous strip of the metal alloy, the strip being quenched at a cooling rate, determined at a free surface thereof, of 103° C./sec or more in a temperature range of from 500° C. to 200° C.; and continuously coiling the quenched strip at a temperature of 200° C.

Abstract: A working apparatus for band blade provided with a bender for bending a band blade into a predetermined configuration, and a cutter cutting the band blade. The cutter is positioned successively after the bender. And, a working method for band blade having a bending process in which a band blade is bent into a predetermined configuration, and a cutting process in which the band blade is cut. The cutting process is successively conducted after the bending process is previously conducted.

Abstract: The invention provides crystals of P1,P4-di(uridine 5′-)tetraphosphate or a salt thereof; a process for producing the crystals; and a process for producing P1,P4-di(uridine 5′-)tetraphosphate (U2P4) or a salt thereof from UMP serving as a starting material and by use of DPC and PPi, which process comprises at least one of the following treatment steps: (a) adding UMP diphenylphosphate (UMP-DPP) in divided portions during a step of reaction of UMP-DPP with a PPi-organic alkali salt; (b) carrying out reaction of UMP-DPP with a PPi-organic alkali salt in the presence of a base; and (c) further treating the synthesized U2P4 with an alkali. The crystals of U2P4 or a salt thereof obtained through the process according to the invention have high purity and stability and a less hygroscopicity as compared with a lyophilized product, to thereby serve as a useful raw material for preparing a pharmaceutical.

Abstract: The invention provides crystals of p1,P4-di(uridine 5′-) tetraphosphate or a salt thereof; a process for producing the crystals; and a process for producing P1,P4-di(uridine 5′-) tetraphosphate (U2P4) or a salt thereof from UMP serving as a starting material and by use of DPC and PPi, which process comprises at least one of the following treatment steps: (a) adding UMP diphenylphosphate (UMP-DPP) in divided portions during a step of reaction of UMP-DPP with a PPi-organic alkali salt; (b) carrying out reaction of UMP-DPP with a PPi-organic alkali salt in the presence of a base; and (c) further treating the synthesized U2P4 with an alkali. The crystals of U2P4 or a salt thereof obtained through the process according to the invention have high purity and stability and a less hygroscopicity as compared with a lyophilized product, to thereby serve as a useful raw material for preparing a pharmaceutical.

Abstract: The present invention provides a low iron-loss Fe-based amorphous alloy thin strip having an ultrathin oxide layer with a controlled thickness and/or a segregated layer containing either or both P and S at the lower section of an ultrathin oxide layer, as well as an Fe-based amorphous alloy thin strip fabricated with an ultrathin oxide layer with a controlled structure on the thin strip surface, wherein the ultrathin oxide layer is formed with a two-layer structure on the thin strip surface to reduce iron loss. Specifically, there is provided an Fe-based amorphous alloy thin strip characterized by being a quenched metal thin strip obtained by ejecting a molten metal onto a moving substrate through a casting nozzle with a slot-shaped opening and quenching it to solidity, and by having ultrathin oxide layer with a thickness of from 5 nm to 20 nm on at least one surface of the thin strip.

Abstract: Outside-cell wiring that extends the upper part of a macro cell to the direction of X axis is composed of the wiring layer of the upper layer than a terminal for a signal of the macro cell and this terminal is formed to extend in the direction of Y axis (direction that intersects the direction of X axis) so that the outside-cell wiring can be secured for a plurality of wiring channels. The macro cell and the outside-cell wiring are connected via this signal terminal.