Abstract: Provided is a charging method capable of offering a user an incentive to use a particle generation factor determining system. In the particle generation factor determining system including a user interface device 11 through which a user inputs a particle map and a server 13, the server 13 calculates accuracy of each of multiple particle generation factors based on the particle map; the user interface device 11 displays the calculated accuracy or a title of generation-factor-relevant information 27 on each particle generation factor corresponding to this accuracy; the server 13 provides the generation-factor-relevant information 27 to the user interface device 11; a charged fee for providing particle generation-factor-relevant information 27 is determined based on accuracy of a particle generation factor corresponding to the provided generation-factor-relevant information 27.

Abstract: Etching is performed through the following process. A substrate is loaded into a processing chamber and mounted on a mounting table therein. Then, in the state where a ring member at least a surface of which is made of a same material as a main component of an etching target film is provided to surround the substrate, a processing gas is injected in a shower-like manner from a gas supply unit oppositely facing the substrate and the etching target film is etched by using a plasma of the processing gas; and evacuating the inside of the processing chamber through an exhaust path. Through this process, unbalanced distribution of plasma active species in the vicinity of a circumferential edge portion of the substrate can be suppressed.

Abstract: A substrate cleaning method for cleaning and removing foreign materials adhered to a surface of a substrate includes heating the substrate to peel off the foreign materials from the surface of the substrate by a thermal stress, removing the foreign materials from the surface of the substrate by a temperature gradient created in a proximity of the surface of the substrate, and collecting the foreign materials removed from the surface of the substrate by a collecting unit facing the substrate.

Abstract: A gas purification apparatus capable of removing fine particles of substantially any size without lowering the efficiency of gas supply. A loader module of a substrate processing apparatus includes a fan filter unit for producing a downward flow of atmospheric air in the internal space of a transfer chamber. The fan filter unit includes a fan for generating an atmospheric air flow, a filter of mesh structure for trapping and removing particles mixed in the atmospheric air flow, an irradiation heater disposed between the fan and the filter, and a high temperature part disposed in the atmospheric air flow and higher in temperature than the filter.

Abstract: An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.

Abstract: A defect distribution in the vicinity of a surface of a glass substrate is inspected by a positron annihilation gamma ray measurement. A buffer layer including a brittle layer and/or a coating layer is created on the surface of the glass substrate. The brittle layer is formed by irradiating a gas cluster ion on the surface to deteriorate the glass. The coating layer is formed by coating the surface with a soft substance. Next, a thickness of the created buffer layer is measured by a positron annihilation gamma ray measurement. The surface of the glass substrate is then cleaned. To create a slurry, abrasive particles for the slurry are uniformly scattered on a polishing implement for polishing the glass substrate and a liquid component for the slurry is added thereto. The glass substrate is then chemically mechanically polished from the buffer layer with the slurry.

Abstract: There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.

Abstract: A substrate cleaning method includes removing a foreign material attached to a substrate while preventing deterioration of the substrate and any film formed on or above the substrate. A cleaning gas at a pressure between 0.3 MPa and 2.0 MPa is sprayed towards a wafer W with attached foreign material 22 placed in a near-vacuum, producing clusters 21 made up of a multitude of gas molecules 20, and the clusters 21 collide with the wafer W without undergoing ionization.

Abstract: A method of cleaning a powdery source supply system prevents outflow of particles from a chamber or an introduction line in a film forming process. A substrate processing system includes a powdery source supply system and a film forming processing unit. The powdery source supply system includes an ampoule for accommodating a powdery source, a carrier gas supply unit for supplying a carrier gas into the ampoule, an introduction line for connecting the ampoule and the film forming processing unit, a purge line branched from the introduction line, and a valve for opening or closing the introduction line. When the valve is opened and the interior of the purge line is evacuated prior to the film forming process, the carrier gas supply unit supplies a carrier gas so that the viscous force acting on particles by the carrier gas is greater than the viscous force in the film forming process.

Abstract: A gate valve cleaning method that can clean a gate valve that brings an atmospheric transfer chamber and an internal pressure variable transfer chamber that transfer a substrate into communication with each other or shuts them off from each other without bringing about a decrease in the throughput of a substrate processing system. Before the gate valve brings the atmospheric transfer chamber and the internal pressure variable transfer chamber into communication with each other, the pressure in the internal pressure variable transfer chamber is increased so that the pressure in the internal pressure variable transfer chamber can become higher than the pressure in the atmospheric transfer chamber.

Abstract: A gas flow cell for an optical gas-analysis system, including a cylindrical cell body; and a single sample-gas introduction port configured to introduce sample-gas. The single sample-gas introduction port is provided at a location at a substantial center of the cell body with respect to a long axis direction of the cell body, and the single sample-gas introduction port is aligned along a direction orthogonal to the long axis direction so that the cylindrical cell body and the single sample-gas introduction port together form a shape of a character T.

Abstract: An exhaust pump that prevents particles from entering a processing chamber of a substrate processing apparatus. The exhaust pump connected to the processing chamber has rotary blades and an air intake portion disposed on the processing chamber side of the rotary blades. A shielding unit is disposed inside the air intake portion and shields the rotary blades when the air intake portion is viewed from the processing chamber side.

Abstract: A substrate accommodation device can effectively prevent a foreign substance from adhering to a substrate accommodated therein depending on an environment where the substrate accommodation device is used. The substrate accommodation device 100 includes an air supply unit 110 configured to introduce exterior air into the substrate accommodation device 100; an exhaust unit 120 disposed to face the air supply unit 110; a substrate mounting plate 140 provided between the air supply unit 110 and the exhaust unit 120 and provided with holes 142 through which the air supply unit 110 and the exhaust unit 120 communicate with each other; an air supply filter 112 provided at the air supply unit 110; and a fan 122 provided at the air supply unit 110 or the exhaust unit 120. Further, one of a state sensor configured to detect a state within the substrate accommodation device 100, a particle charging device, and a temperature controller or a combination of two or more thereof is detachably provided in a mounting hole 150.

Abstract: To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.

Abstract: A particle removal apparatus for removing particles from a chamber of a plasma processing apparatus, wherein the chamber is connected to a gas exhaust port and a plasma of a processing gas is generated in the chamber to plasma process a substrate to be processed, includes a particle charging control member for positively charging particles generated within the chamber by positive ions of an ion sheath region formed in a region other than the vicinity of the substrate to be processed, wherein positively charged particles are discharged from the chamber via the gas exhaust port. Therefore, there is no plasma disturbance or metal contamination, and thus can be applied to a practical use.

Abstract: There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.

Abstract: Provided are a cleaning device and a cleaning method of a semiconductor manufacturing apparatus, capable of performing a cleaning process more effectively as compared to conventional cases and obtaining a high cleaning effect. A semiconductor manufacturing apparatus cleaning device 100 includes a pure water steam generating vessel 2 for generating pure water steam from pure water; a supply port 5 for supplying the pure water steam to a cleaning target portion; a supply line 4 for connecting the pure water steam generating vessel with the supply port; a collection port 6 for collecting steam used in cleaning from the cleaning target portion; a collection vessel 8 for condensing and collecting the used steam; and a collection line 7 for connecting the collection port 6 with the collection vessel 8.

Abstract: To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.

Abstract: A particle capture unit adopted to be exposed to a space in which particles fly includes at least a first layer formed of a plurality of first fiber-like materials and a second layer formed of a plurality of second fiber-like materials. The first fiber-like materials are thinner than the second fiber-like materials and arrangement density of the first fiber-like materials in the first layer is higher than that of the second fiber-like materials in the second layer, the second layer is interposed between the first layer and the space, and the first and second layers are hardened and bonded together by sintering.

Abstract: A system for determining occurrence factors of particles includes a user interface device, and an apparatus for detecting the occurrence factors of particles. The apparatus for detecting the occurrence factors of particles includes a storage unit that stores a program for executing a calculation method for calculating a likelihood of each of the occurrence factors of particles in the form of a score; and a calculation unit for calculating the score for each of the occurrence factors of particles based on particle distributions at least on a surface of a substrate using the stored program. The user interface device displays the calculated score for each of the occurrence factors of particles.