Patents by Inventor Tsuyoshi Moriya

Tsuyoshi Moriya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8253930
    Abstract: This absorption spectrometric apparatus for semiconductor production process includes a flow passageway switching mechanism connected to a discharging flow passageway of a processing chamber for a semiconductor production process and a multiple reflection type moisture concentration measuring absorption spectrometric analyzer that allows a laser beam from a laser light source to undergo multiple reflection within a cell, detects a light absorbancy change by a gas within the cell, and measures a moisture concentration within the gas. The flow passageway switching mechanism connects the discharging flow passageway by switching between a measuring flow passageway through which the gas is discharged by passing through the cell and a bypass flow passageway through which the gas is discharged without passing through the cell.
    Type: Grant
    Filed: February 17, 2010
    Date of Patent: August 28, 2012
    Assignees: Shimadzu Corporation, Tokyo Electron Limited
    Inventors: Osamu Akiyama, Masashi Akimoto, Tsuyoshi Moriya, Jun Yamawaku
  • Patent number: 8243265
    Abstract: A foreign material detecting method for detecting a foreign material attached to a substrate surface includes a spraying step of spraying an organic solvent or an oil-phase material containing a halogen element to the substrate surface, a condensing step of emphasizing the foreign material by condensing the sprayed organic solvent or oil-phase material around the foreign material attached to the substrate surface by controlling a temperature of the substrate surface, and a surface inspecting step of detecting the foreign material emphasized by the condensation of the organic solvent or the oil-phase material by a surface inspecting device.
    Type: Grant
    Filed: November 12, 2009
    Date of Patent: August 14, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Moriya, Hiroshi Nagaike, Hideaki Yakushiji
  • Patent number: 8236109
    Abstract: A method for cleaning a component in a substrate processing apparatus including a processing chamber, foreign materials being attached to the component, at least a part of the component being exposed inside the processing chamber, and the substrate processing apparatus being adapted to load and unload a foreign material adsorbing member into and from the processing chamber. The method includes loading the foreign material adsorbing member into the processing chamber; generating a plasma nearer the component than the foreign material adsorbing member; extinguishing the plasma; and unloading the foreign material adsorbing member from the processing chamber, wherein the generation and the extinguishment of the plasma are repeated alternately and the foreign material adsorbing member has a positive potential at least during the extinguishment of the plasma.
    Type: Grant
    Filed: December 16, 2009
    Date of Patent: August 7, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Moriya, Akitaka Shimizu
  • Patent number: 8231800
    Abstract: There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.
    Type: Grant
    Filed: January 26, 2009
    Date of Patent: July 31, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Moriya, Hiroyuki Nakayama
  • Publication number: 20120174773
    Abstract: A gas purification apparatus capable of removing fine particles of substantially any size without lowering the efficiency of gas supply. A loader module of a substrate processing apparatus includes a fan filter unit for producing a downward flow of atmospheric air in the internal space of a transfer chamber. The fan filter unit includes a fan for generating an atmospheric air flow, a filter of mesh structure for trapping and removing particles mixed in the atmospheric air flow, an irradiation heater disposed between the fan and the filter, and a high temperature part disposed in the atmospheric air flow and higher in temperature than the filter.
    Type: Application
    Filed: March 16, 2012
    Publication date: July 12, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Tsuyoshi MORIYA
  • Patent number: 8218145
    Abstract: A particle monitor system that can detect fine particles in a substrate processing apparatus. The substrate processing apparatus has a chamber in which a substrate is housed and subjected to processing, a dry pump that exhausts gas out of the chamber, and a bypass line that communicates the chamber and the dry pump together. The particle monitor system has a laser light oscillator that irradiates laser light toward a space in which the particles may be present, and a laser power measurement device that is disposed on an optical path of the laser light having passed through the space and measures the energy of the laser light.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: July 10, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Moriya, Takashi Enomoto
  • Patent number: 8210742
    Abstract: A foreign matter detecting method of detecting foreign matter attached to a peripheral edge of a substrate, which makes it possible to accurately detect foreign matter attached to the peripheral edge of the substrate even if the foreign matter is of a minute size below the detection limit of an existing measuring instrument, and which is highly versatile and suitable for mass production of substrates. The substrate is cooled to condense moisture around the foreign matter attached to the peripheral edge of the substrate, and then the condensed moisture is iced to grow an ice crystal. Then, the foreign matter attached to the peripheral edge of the substrate, which is emphasized by the ice crystal, is detected.
    Type: Grant
    Filed: July 21, 2009
    Date of Patent: July 3, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Moriya, Eiichi Nishimura
  • Patent number: 8206513
    Abstract: To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.
    Type: Grant
    Filed: June 2, 2008
    Date of Patent: June 26, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Moriya, Hiroshi Nagaike, Hiroyuki Nakayama
  • Patent number: 8208802
    Abstract: Provided are a focusing position determining apparatus, an imaging apparatus, and a focusing position determining method, the method including setting an aperture to a first aperture value; driving a focus lens through a first range of positions as a first drive; during the first drive, obtaining images periodically, and calculating a first sampling of contrast values from the obtained images; calculating a first focus position from the first sampling of contrast values; setting the aperture to a second aperture value; driving a focus lens through a second range of positions as a second drive, the second range of positions being based on the first focus position; during the second drive, obtaining images periodically, and calculating a second sampling of contrast values from the obtained images; calculating a focusing position from the second sampling of contrast values; and driving the focus lens to the calculated focusing position.
    Type: Grant
    Filed: August 27, 2009
    Date of Patent: June 26, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yuki Endo, Toshiyuki Tanaka, Toshihiro Hamamura, Tsuyoshi Moriya, Naoki Takafuji
  • Publication number: 20120154625
    Abstract: An image processing apparatus, an image processing method, and a program recording medium are provided. The image processing apparatus includes a color reproduction correction unit for correcting an image signal formed by an imaging element according to a color reproduction matrix; a color reproduction matrix storage unit for storing a registered color reproduction matrix or an inverse matrix of the registered color reproduction matrix for each light source coordinates in a color space; and a color reproduction matrix calculation unit for interpolating inverse matrices of registered color reproduction matrices corresponding to at least two light source coordinates stored in the color reproduction matrix storage unit according to estimated light source coordinates in the color space, which are obtained from the image signal, and calculating an inverse matrix of a result of the interpolation as the color reproduction matrix.
    Type: Application
    Filed: December 13, 2011
    Publication date: June 21, 2012
    Applicant: Samsung Electronics Co., Ltd.
    Inventor: Tsuyoshi MORIYA
  • Patent number: 8202394
    Abstract: In a method of manufacturing a semiconductor device with plasma generated in a process chamber by impressing radio-frequency power, a level of a radio-frequency power for each step is switched over in response to processing in each step upon applying a plurality of processing steps to a semiconductor substrate while holding the semiconductor substrate, and thereby the plurality of steps are carried out successively.
    Type: Grant
    Filed: June 11, 2002
    Date of Patent: June 19, 2012
    Assignee: Renesas Electronics Corporation
    Inventors: Tsuyoshi Moriya, Natsuko Ito, Fumihiko Uesugi
  • Patent number: 8172949
    Abstract: A computer readable storage medium storing a program for performing an operation method of a substrate processing apparatus is provided. The operation method includes the steps of introducing a nonreactive gas into the vacuum preparation chamber before the gate valve is opened while the substrate is transferred between the vacuum preparation chamber of the vacuum processing unit and the transfer unit, stopping introducing the nonreactive gas when an inner pressure of the vacuum preparation chamber becomes same as an atmospheric pressure, starting an evacuation process of the corrosive gas in the vacuum preparation chamber and then opening to atmosphere performed by letting the vacuum preparation chamber communicate with an atmosphere, and opening the gate valve after the step of opening to atmosphere.
    Type: Grant
    Filed: March 5, 2010
    Date of Patent: May 8, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Tomoyuki Kudo, Jun Ozawa, Hiroshi Nakamura, Kazunori Kazama, Tsuyoshi Moriya, Hiroyuki Nakayama, Hiroshi Nagaike
  • Publication number: 20120109582
    Abstract: Disclosed is an abnormality detection system that accurately detects abnormalities that arise in a device.
    Type: Application
    Filed: June 28, 2010
    Publication date: May 3, 2012
    Applicant: Tokyo Electron Limited
    Inventors: Tsuyoshi Moriya, Yasutoshi Umehara, Yuki Kataoka, Michiko Nakaya
  • Patent number: 8152907
    Abstract: A gas purification apparatus capable of removing fine particles of substantially any size without lowering the efficiency of gas supply. A loader module of a substrate processing apparatus includes a fan filter unit for producing a downward flow of atmospheric air in the internal space of a transfer chamber. The fan filter unit includes a fan for generating an atmospheric air flow, a filter of mesh structure for trapping and removing particles mixed in the atmospheric air flow, an irradiation heater disposed between the fan and the filter, and a high temperature part disposed in the atmospheric air flow and higher in temperature than the filter.
    Type: Grant
    Filed: July 16, 2008
    Date of Patent: April 10, 2012
    Assignee: Tokyo Electron Limited
    Inventor: Tsuyoshi Moriya
  • Patent number: 8137473
    Abstract: To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.
    Type: Grant
    Filed: August 20, 2004
    Date of Patent: March 20, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Moriya, Hiroshi Nagaike, Hiroyuki Nakayama
  • Patent number: 8132580
    Abstract: A substrate processing system that enables foreign matter adhered to a rear surface or a periphery of a substrate to be completely removed. A substrate processing apparatus performs predetermined processing on the substrate. A substrate cleaning apparatus cleans the substrate at least one of before and after the predetermined processing. A jetting apparatus jets a cleaning substance in two phases of a gas phase and a liquid phase and a high-temperature gas towards the rear surface or the periphery of the substrate.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: March 13, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Moriya, Tadashi Onishi, Ryo Nonaka, Eiichi Nishimura
  • Publication number: 20120055506
    Abstract: In a substrate cleaning method for cleaning a substrate with fine patterns having grooves or holes whose representative length is 0.1 mm or less, the substrate is arranged in a space which contains water, such that the substrate faces an acute-angled leading end of a discharge electrode which can be cooled, with a predetermined interval therebetween, with a counter electrode being interposed at a predetermined position between the substrate and the discharge electrode. Then, a predetermined voltage is applied between the discharge electrode and the counter electrode while generating dew condensation in the discharge electrode by cooling the discharge electrode. The substrate is cleaned by generating an aerosol containing water particles having sizes of equal to less than 10 nm in the leading end of the discharge electrode and spraying the aerosol on the substrate.
    Type: Application
    Filed: March 10, 2010
    Publication date: March 8, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tsuyoshi Moriya, Shin Yokoyama, Kikuo Okuyama
  • Publication number: 20120037182
    Abstract: A particle removal apparatus for removing particles from a chamber of a plasma processing apparatus, wherein the chamber is connected to a gas exhaust port and a plasma of a processing gas is generated in the chamber to plasma process a substrate to be processed, includes a particle charging control member for positively charging particles generated within the chamber by positive ions of an ion sheath region formed in a region other than the vicinity of the substrate to be processed, wherein positively charged particles are discharged from the chamber via the gas exhaust port. Therefore, there is no plasma disturbance or metal contamination, and thus can be applied to a practical use.
    Type: Application
    Filed: October 19, 2011
    Publication date: February 16, 2012
    Applicant: TOKYO ELECTON LIMITED
    Inventors: Tsuyoshi MORIYA, Hiroshi Nagaike
  • Publication number: 20120037314
    Abstract: A substrate processing apparatus that enables abnormal electrical discharges and metal contamination to be prevented from occurring. A processing chamber is configured to house and carry out predetermined plasma processing on a substrate. A lower electrode is disposed on a bottom portion of the processing chamber and has the substrate mounted thereon. An upper electrode is disposed in a ceiling portion of the processing chamber. A side wall component covering a side wall of the processing chamber faces onto a processing space between the upper electrode and the lower electrode. The side wall component has at least one electrode layer to which a DC voltage is applied. An insulating portion made of an insulating material is present at least between the electrode layer and the processing space and covers the electrode layer. The insulating portion is formed by thermally spraying the insulating material.
    Type: Application
    Filed: October 21, 2011
    Publication date: February 16, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Shosuke ENDOH, Tsuyoshi MORIYA, Akitaka SHIMIZU
  • Patent number: 8113757
    Abstract: An intermediate transfer chamber that can prevent formation of defects in substrates. The intermediate transfer chamber is provided between a loader module being in a first environment where the interior thereof is at a first pressure and contains moisture, and a chamber of a process module being in a second environment where the interior thereof is at a second pressure lower than the first pressure. The intermediate transfer chamber comprises a transfer arm comprising a pick that bidirectionally transfers a substrate between the loader module and the chamber and supports the substrate, a load-lock module exhaust system that exhausts the interior of the intermediate transfer chamber so as to reduce pressure in the intermediate transfer chamber from the first pressure to the second pressure, and a plate-like member that controls the conductance of exhaust on at least a principal surface of the substrate opposite to the pick when the interior of the intermediate transfer chamber is exhausted.
    Type: Grant
    Filed: July 31, 2007
    Date of Patent: February 14, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Tsuyoshi Moriya, Hiroyuki Nakayama, Keisuke Kondoh, Hiroki Oka