Abstract: Systems and methods for generating access entitlements to networked computing resources. Systems may be configured to: receive an input data set representing an entitlement request associated with a user identifier; generate an entitlement prediction associated with the user identifier based on an entitlement model and at least one hierarchical level, the entitlement model defining a cluster representation of entitlement similarity, and wherein the entitlement prediction is based on one or more similarity relationships corresponding to the at least one hierarchical level; and transmit a signal representing the entitlement prediction for granting downstream access to a networked computing resource.

Abstract: A method for generating an image with uniform brightness, the method includes: providing a first sub-image having a first overlapping portion and a first non-overlapping portion; providing a second sub-image having a second overlapping portion and a second non-overlapping portion; and superimposing the first sub-image with the second sub-image through the first overlapping portion and the second overlapping portion. The brightness of the first overlapping portion of the first sub-image is complementary to the brightness of the second overlapping portion of the second sub-image.

Abstract: Various embodiments described herein provide for a digital In-Memory Computing (IMC) macro circuit that utilizes approximate arithmetic hardware to reduce the number of transistors and devices in the circuit relative to a convention digital IMC, thereby improving the area-efficiency of the digital IMC, but while retaining the benefits of reduced variability relative to an analog-mixed-signal (AMS) circuit. The proposed digital IMC macro circuit also includes custom full adder (FA) circuits with pass gate logic in a ripple carry adder (RCA) tree. The disclosed digital IMC macro circuit can also perform a vector-matrix dot product in one cycle while achieving high energy and area efficiency.

Abstract: An exhaust system includes an exhaust line configured to receive an exhaust mixture. The exhaust system further includes an oscillating assembly connected to the exhaust line. The exhaust system further includes a feedback path extending from an external gas source to the oscillating assembly, wherein the feedback path is separate from the exhaust line.

Abstract: An implant shredder includes a base and a cutting member. The base includes a first chamber and a second chamber intercommunicating with the first chamber. The first chamber includes an inlet. The second chamber includes an outlet. The cutting member is received in the second chamber. The cutting member is driven by a driving member to rotate. The cutting member includes a plurality of cutting edges located on a circumference of a same radius. The plurality of cutting edges is rotatably disposed adjacent to a location intercommunicating with the first chamber. An implant forming method includes creating data of an outline of an implant; producing a shaping mold based on the data; and cutting a to-be-processed object with the implant shredder, then mixing the to-be-proceed object with a biological tissue glue to obtain a raw material, and filling the raw material into the shaping mold to form the implant.

Abstract: An optical structure is provided. The optical structure includes a substrate, a light shielding layer, a light filter layer, and a first spacer. The light shielding layer is disposed on the substrate. The light shielding layer includes a first opening. The light filter layer includes a first portion and a second portion. The first portion and the second portion are arranged in a first direction. The first portion is disposed in the first opening. The second portion is connected to the first portion. The second portion is disposed on the light shielding layer. The second portion does not overlap the first opening. The first spacer is disposed on the second portion.

Abstract: An implant shredder includes a base and a cutting member. The base includes a first chamber and a second chamber intercommunicating with the first chamber. The first chamber includes an inlet. The second chamber includes an outlet. The cutting member is received in the second chamber. The cutting member is driven by a driving member to rotate. The cutting member includes a plurality of cutting edges located on a circumference of a same radius. The plurality of cutting edges is rotatably disposed adjacent to a location intercommunicating with the first chamber. An implant forming method includes creating data of an outline of an implant; producing a shaping mold based on the data; and cutting a to-be-processed object with the implant shredder, mixing the cut to-be-proceed object with a biological tissue glue to obtain a raw material, and filling the raw material into the shaping mold to form the implant.

Abstract: A tool for a bone implant includes a rod and an adaptor. The rod includes a coupling portion having a through-hole. The rod further includes a measuring arm connected to the coupling portion and a force applying arm connected to the coupling portion. The measuring arm includes a first extension section having a first indicator portion, and the force applying arm includes a second extension section having a second indicator portion. The force applying arm is elastically deformable away from the measuring arm to displace the second extension section relative to the first extension section. The adaptor is coupled in the through-hole and includes an outer ring and an inner ring. The outer ring is rotatable relative to the inner ring in a single direction.

Abstract: An electronic device is provided. The electronic device includes a first inorganic insulating layer, a first substrate, a second inorganic insulating layer, and a plurality of electronic elements. The first substrate is disposed on the first inorganic insulating layer. The second inorganic insulating layer is disposed on the first substrate. The electronic elements are disposed on the second inorganic insulating layer. A thickness of the second inorganic insulating layer is less than a thickness of the first inorganic insulating layer.

Abstract: The present disclosure provides a control module and a control method thereof for an SDRAM. The control module includes a register and a controller. The controller is configured to: select a first command, wherein the first command includes at least two first memory commands; execute one of the at least two first memory commands; store an un-executed memory command of the at least two first memory commands in a register and back the un-executed memory command up as at least one first back-up memory command; select a second command, wherein the first command and the second command are stored in different memory bank groups; and execute the second command.

Abstract: A pixel structure includes a data line, a scan line, a common signal line, a first switching element, a second switching element, a first pixel electrode, and a second pixel electrode. The first switching element is electrically connected to the scan line and the data line. The second switching element is electrically connected to the scan line and the common signal line. The first pixel electrode is electrically connected to the first switching element. The second pixel electrode is electrically connected to the second switching element. The second pixel electrode surrounds the first pixel electrode.

Abstract: A 3D bounding box reconstruction method includes obtaining masks corresponding to a target object in images, obtaining a trajectory direction of the target object according to the masks, generating a target contour according to one of the masks, transforming the target contour into a transformed contour using a transformation matrix, obtaining a first bounding box according to the transformed contour and the trajectory direction, transforming the first bounding box into a second bounding box corresponding to the target contour using the transformation matrix, obtaining first reference points according to the target contour and the second bounding box, transforming the first reference points into second reference points using the transformation matrix, obtaining a third bounding box using the second reference points, transforming the third bounding box into a fourth bounding box using the transformation matrix, and obtaining a 3D bounding box using the second bounding box and the fourth bounding box.

Abstract: A method for calibrating a transmitter-to-receiver (T2R) relative phase in millimeter wave (mmWave) beamforming system includes: transmitting a first calibrated signal to a second antenna of the mmWave beamforming system through a first antenna of the mmWave beamforming system according to a first transmitter (TX) input signal; receiving the first calibrated signal through the second antenna, and obtaining a first loopback receiver (RX) signal according to the first calibrated signal received by the second antenna; transmitting a second calibrated signal to the first antenna through the second antenna according to a second TX input signal; receiving the second calibrated signal through the first antenna, and obtaining a second loopback RX signal according to the second calibrated signal received by the first antenna; and calibrating the T2R relative phase according to a phase difference between the first and second loopback RX signals.

Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer.

Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.

Abstract: An exhaust system includes an exhaust line configured to receive an exhaust mixture. The exhaust system further includes an oscillating assembly connected to the exhaust line. The exhaust system further includes a feedback path extending from an external gas source to the oscillating assembly, wherein the feedback path is separate from the exhaust line.

Abstract: A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.

Abstract: A tool for a bone implant includes a sleeve and a transmission rod including a transmission member disposed on an end of a shaft. Another end of the shaft is located outside of the sleeve. The transmission member is received in the sleeve and includes a first compartment and a plurality of first teeth surrounding the first compartment. A drilling rod includes a second compartment and a plurality of second teeth surrounding the second compartment. A coupling portion is disposed between the second compartment and a bit. The coupling portion is coupled with the sleeve. The bit is located outside of the sleeve. Two magnets are disposed in the first and second compartments, respectively. Two same poles respectively of the two magnets face each other.

Abstract: Systems and methods for application identification in accordance with embodiments of the invention are disclosed. In one embodiment, a user device includes a processor and memory configured to store an application, a session manager, an application identifier, and at least one shared library, and the processor is configured by the session manager to communicate the application identifier and the application identifier data to an authentication server and permit the execution of the application in response to authentication of the application by the authentication server.

Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.