Abstract: Systems and methods for saving encoded media streamed using adaptive bitrate streaming in accordance with embodiments of the invention are disclosed. In one embodiment of the invention, a playback device configured to perform adaptive bitrate streaming of media includes a video decoder application and a processor, where the video decoder application configures the processor to select a download stream from a set of alternative streams of video data, measure streaming conditions and request a stream of video data from the alternative streams of video data, receive portions of video data from the requested stream of video data, decode the received video data, save the received video data to memory, when the received video data is from the download stream and separately download and save the corresponding portion of video data from the download stream to memory, when the received video data is not from the download stream.

Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer.

Abstract: A method of using an exhaust system includes activating an oscillating assembly connected to an exhaust line, wherein the oscillating assembly is configured to vibrate the exhaust line. The method further includes measuring a value indicating a flow of particles through the exhaust line. The method further includes comparing the value with a predetermined threshold value. The method further includes increasing a rate of vibration of the exhaust line in response to the value being below the predetermined threshold value.

Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.

Abstract: A liquid-crystal antenna apparatus is provided. The liquid-crystal antenna apparatus includes: a liquid-crystal antenna unit and a control unit. The liquid-crystal antenna unit is configured to receive a wireless signal. The liquid-crystal antenna unit includes a plurality of microwave elements, and each of the microwave elements includes a first electrode, a second electrode opposite to the first electrode, and a liquid-crystal cell disposed between the first electrode and the second electrode. The control unit is electrically connected to the liquid-crystal antenna unit, and is configured to control the liquid-crystal antenna unit to form a first beam having a first direction. The control unit determines a source orientation of the wireless signal according to the wireless signal received by the liquid-crystal antenna unit, and controls the first direction of the first beam to direct toward the source orientation.

Abstract: An electronic apparatus and a detection method using the same are provided. The electronic apparatus includes a processor, a platform controller, and an auxiliary controller. The processor includes a first bus compatible with a first standard. The platform controller is coupled to the processor, and the processor is connected to peripheral devices of the electronic apparatus through the platform controller or the first bus according to the first standard. The auxiliary controller is coupled to the processor through the first bus, and the processor controls the auxiliary controller through a second bus and the platform controller. The auxiliary controller receives a detection signal to detect the processor, the platform controller, or at least one of the peripheral devices in the electronic apparatus through the first bus compatible with the first standard according to the detection signal.

Abstract: A light emitting diode and manufacturing method thereof are provided. The light emitting diode includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first current conducting layer is connected to the first-type semiconductor layer by the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapped with the first metal layer.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: An exhaust system includes an inlet configured to receive an exhaust mixture. The exhaust system further includes an exhaust line connected to the inlet. The exhaust system further includes an oscillating assembly connected to the exhaust line. The exhaust system further includes a by-pass line connected to the exhaust line. The exhaust system further includes a feedback path extending from an external gas source to the oscillating assembly, wherein the feedback path is separate from the exhaust line.

Abstract: Systems and methods for identifying consumer electronic products using a playback device with a product identifier in accordance with embodiments of the invention are disclosed. In one embodiment, a playback device includes a processor and memory configured to store a product identifier, where the product identifier is associated with a specific product and is associated with cryptographic information, wherein the processor is configured by a client application to request content from a server, communicate the product identifier to a server, and receive encrypted content accessible using cryptographic information including the cryptographic information associated with the product identifier.

Abstract: A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ?10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.

Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.

Abstract: A cathode material for a solid oxide fuel cell comprises a perovskite type complex oxide which is represented by Formula 1: Gd1-xMxCoO3-?.In Formula 1, M represents an alkali metal, x is larger than 0 and not more than 0.75, and ? ranges from 0 to 2.

Abstract: Systems and methods for saving encoded media streamed using adaptive bitrate streaming in accordance with embodiments of the invention are disclosed. In one embodiment of the invention, a playback device configured to perform adaptive bitrate streaming of media includes a video decoder application and a processor, where the video decoder application configures the processor to select a download stream from a set of alternative streams of video data, measure streaming conditions and request a stream of video data from the alternative streams of video data, receive portions of video data from the requested stream of video data, decode the received video data, save the received video data to memory, when the received video data is from the download stream and separately download and save the corresponding portion of video data from the download stream to memory, when the received video data is not from the download stream.

Abstract: An examination method comprises: generating a received audio signal according to sound generated from rotation of the fan by an audio receiving device; performing Fourier transform on the received audio signal to obtain a reference frequency domain signal; recognizing a plurality of characteristic bands according to the reference frequency domain signal; adjusting the received audio signal according to the characteristic bands respectively to form a plurality of casting audio signals corresponding to frequency components in the characteristic bands respectively; playing the casting signals sequentially by an audio casting device; and recognizing at least one key band among the characteristic bands according to the transmission rate of the hard drive upon playing the casting signals.

Abstract: A fibrocartilage suturing device is provided to solve the problem where the conventional procedure of the surgery is inconvenient. The fibrocartilage suturing device includes a tube assembly, a tubular member, and an anchor. The tube assembly extends through the tube assembly and includes an insertion section. The movement member is coupled with the tube assembly and includes a thrust rod extending through the tubular member. The anchor is located at one end of the thrust rod and includes a body and at least two wings connected to the body is able to be folded and unfolded relative to the body. The body of the anchor is connected to an end of a thread. Another end of the thread is connected to the tubular member.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dielectric layer over a semiconductor substrate and forming an opening in the dielectric layer to expose a conductive element. The method also includes forming a conductive layer over the conductive element and modifying an upper portion of the conductive layer using a plasma operation to form a modified region. The method further includes forming a conductive plug over the modified region.

Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.

Abstract: A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.

Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.