Abstract: A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.

Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: Systems and methods for application identification in accordance with embodiments of the invention are disclosed. In one embodiment, a user device includes a processor and memory configured to store an application, a session manager, an application identifier, and at least one shared library, and the processor is configured by the session manager to communicate the application identifier and the application identifier data to an authentication server and permit the execution of the application in response to authentication of the application by the authentication server.

Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.

Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.

Abstract: A semiconductor device includes a first vertical device having a first threshold and second vertical device having a second threshold. The first vertical device includes a first source; a first channel over the first source; a first drain over the first channel; a first conductive layer adjacent to the first channel; and a first gate adjacent to the first conductive layer. The second vertical device includes a second source; a second channel over the second source; a second drain over the second channel; a second conductive layer adjacent to the second channel; and a second gate adjacent to the second conductive layer.

Abstract: A nanowire field effect transistor (FET) device and method for forming a nanowire FET device are provided. A nanowire FET including a source region and a drain region is formed. The nanowire FET further includes a nanowire that connects the source region and the drain region. A source silicide is formed on the source region, and a drain silicide is formed on the drain region. The source silicide is comprised of a first material that is different from a second material comprising the drain silicide.

Abstract: A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.

Abstract: Systems and methods for application identification in accordance with embodiments of the invention are disclosed. In one embodiment, a user device includes a processor and memory configured to store an application, a session manager, an application identifier, and at least one shared library, and the processor is configured by the session manager to communicate the application identifier and the application identifier data to an authentication server and permit the execution of the application in response to authentication of the application by the authentication server.

Abstract: A 3D printing method of a metal object includes stacking molten metal powders along an outlined path to form a metal object. An inert gas is introduced into a chamber with the metal object inside, and the metal object is hot isostatic pressed in the chamber at 80-120 MPa and 900-1000° C. for 1-4 hours.

Abstract: According to an exemplary embodiment, a method of forming a vertical structure with at least two barrier layers is provided. The method includes the following operations: providing a substrate; providing a vertical structure over the substrate; providing a first barrier layer over a source, a channel, and a drain of the vertical structure; and providing a second barrier layer over a gate and the drain of the vertical structure.

Abstract: A cathode material for a solid oxide fuel cell comprises a perovskite type complex oxide which is represented by Formula 1: Gd1-xMxCoO3-???Formula 1. In Formula 1, M represents an alkali metal, x is larger than 0 and not more than 0.75, and 6 ranges from 0 to 2.

Abstract: An examination method comprises: generating a received audio signal according to sound generated from rotation of the fan by an audio receiving device; performing Fourier transform on the received audio signal to obtain a reference frequency domain signal; recognizing a plurality of characteristic bands according to the reference frequency domain signal; adjusting the received audio signal according to the characteristic bands respectively to form a plurality of casting audio signals corresponding to frequency components in the characteristic bands respectively; playing the casting signals sequentially by an audio casting device; and recognizing at least one key band among the characteristic bands according to the transmission rate of the hard drive upon playing the casting signals.

Abstract: A minimally invasive bone fracture positioning device includes a sleeve, a movable unit, and a support. The sleeve includes an alignment portion located on a longitudinal axis of the sleeve. The movable unit includes a positioning portion. The positioning portion is located on the longitudinal axis and is spaced from the alignment portion. The movable unit is mounted in a radial direction of the sleeve. The movable unit is slideable relative to the sleeve along the longitudinal axis. A support is coupled to the sleeve and the movable unit. The movable unit is spaced from the sleeve by the support.

Abstract: Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.

Abstract: According to an exemplary embodiment, a chip is provided. The chip includes a first vertical device having a first threshold and second vertical device having a second threshold. The first vertical device includes a first source; a first channel over the first source; a first drain over the first channel; a first conductive layer adjacent to the first channel; and a first gate adjacent to the first conductive layer. The second vertical device includes a second source; a second channel over the second source; a second drain over the second channel; a second conductive layer adjacent to the second channel; and a second gate adjacent to the second conductive layer.

Abstract: A mandibular fixation device overcomes the low operability of the conventional mandibular fixation device. The mandibular fixation device includes a sleeve, a first screw rod, a second screw rod and two positioning members. The sleeve includes two ends respectively provided with first and second screw holes. The first and second screw holes have opposite spiral directions. The first screw rod has a first threaded portion and a first assembly portion. The first threaded portion is threadedly engaged with the first screw hole, and the first assembly portion is located outside of the sleeve. The second screw rod has a second threaded portion and a second assembly portion. The second threaded portion is threadedly engaged with the second screw hole, and the second assembly portion is located outside of the sleeve. The two positioning members are coupled with the first and second assembly portions, respectively.

Abstract: A femur supporting device includes a femoral stem having a plurality of inclined passages. The femoral stem includes an inner side and an outer side. Each inclined passage includes an outlet in the inner side and an inlet in the outer side. Each inclined passage inclines upward from the inlet to the outlet. A plurality of supporting rods extends through the inclined passages. A first engaging end of each supporting rod extends out of the outlet of one of the inclined passages. A second engaging end of each supporting rod extends out of the inlet of one of the inclined passages. The first engaging end of each supporting rod is engaged with one of a plurality of first engaging portions in a trochanter head. The second engaging end of each supporting rod is engaged with one of a plurality of second engaging portions of a fixing unit.

Abstract: A linking rod clamping mechanism for connecting a coaxial connector with a printed circuit board includes a fine adjustment assembly that includes a cam and a screw to link with each other, an elastic assembly, and a connecting rod assembly consisting of at least two rectangular bodies. The positioning is achieved in a push manner by pushing the rotating handle down or lifting the rotating handle up, providing a stable structure, reliable operation, simple and quick operation. The linking rod clamping mechanism not only exerts an even force but also can determine the yield and decrease the adjustment time greatly. Furthermore, after the fine adjustment assembly is adjusted, the printed circuit board is clamped for performing a test. The same printed circuit boards in thickness can be quickly replaced and reused, thereby improving the yield and increasing the error tolerance.