Abstract: A liquid-crystal antenna apparatus is provided. The liquid-crystal antenna apparatus includes: a liquid-crystal antenna unit and a control unit. The liquid-crystal antenna unit is configured to receive a wireless signal. The liquid-crystal antenna unit includes a plurality of microwave elements, and each of the microwave elements includes a first electrode, a second electrode opposite to the first electrode, and a liquid-crystal cell disposed between the first electrode and the second electrode. The control unit is electrically connected to the liquid-crystal antenna unit, and is configured to control the liquid-crystal antenna unit to form a first beam having a first direction. The control unit determines a source orientation of the wireless signal according to the wireless signal received by the liquid-crystal antenna unit, and controls the first direction of the first beam to direct toward the source orientation.

Abstract: A power connector includes housing, partition plate, first and second pins, first and second wires and filler. The housing has an interior space, first and second slots. The partition plate divides the interior space into first and second wire channels. Each first and second pin has an inserting portion and a wire connecting portion. The wire connecting portions of the first and second pins are respectively located in the first and second wire channels. The first and the second wires are respectively located in the first and second wire channels. The first and second wires are electrically connected to the wire connecting portions of the first and the second pins respectively. A material of the filler is different from the housing. The filler is filled in the interior space to enclose and separate the first wires and the second wires.

Abstract: A method includes forming a gate stack over a semiconductor region, depositing an impurity layer over the semiconductor region, and depositing a metal layer over the impurity layer. An annealing is then performed, wherein the elements in the impurity layer are diffused into a portion of the semiconductor region by the annealing to form a source/drain region, and wherein the metal layer reacts with a surface layer of the portion of the semiconductor region to form a source/drain silicide region over the source/drain region.

Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.

Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.

Abstract: According to an exemplary embodiment, a method of forming a vertical structure with at least two barrier layers is provided. The method includes the following operations: providing a substrate; providing a vertical structure over the substrate; providing a first barrier layer over a source, a channel, and a drain of the vertical structure; and providing a second barrier layer over a gate and the drain of the vertical structure.

Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

Abstract: Systems and methods are provided for fabricating nanowire devices on a substrate. A first nanowire and a second nanowire are formed on a substrate, the first nanowire and the second nanowire extending substantially vertically relative to the substrate. A first source region and a first drain region are formed with n-type dopants, the first nanowire being disposed between the first source region and the first drain region. A second source region and a second drain region are formed with p-type dopants, the second nanowire being disposed between the second source region and the second drain region.

Abstract: A mandibular fixation device is provided to overcome the low operability of the conventional mandibular fixation device. The mandibular fixation device includes a sleeve, a first screw rod, a second screw rod and two positioning members. The sleeve includes two ends respectively provided with first and second screw holes. The first and second screw holes have opposite spiral directions. The first screw rod has a first threaded portion and a first assembly portion. The first threaded portion is threadedly engaged with the first screw hole, and the first assembly portion is located outside of the sleeve. The second screw rod has a second threaded portion and a second assembly portion. The second threaded portion is threadedly engaged with the second screw hole, and the second assembly portion is located outside of the sleeve. The two positioning members are coupled with the first and second assembly portions, respectively.

Abstract: An electronic device and a method for detecting a malicious file are provided. The method includes the following steps: An executable file is searched, and an import table is extracted from the executable file. The import table includes at least a name of a first DDL and a name of a second DDL. A distance between the first DLL and the second DLL is calculated. Whether the distance exceeds a threshold is determined. If the distance exceeds the threshold, then whether a duplicate content of the import table exists in the executable file is checked. The executable file is regarded as a malicious file if the duplicate content of the import table exists in the executable file.

Abstract: An exhaust system includes an inlet configured to receive an exhaust mixture. The exhaust system further includes an exhaust line connected to the inlet. The exhaust system further includes an oscillating assembly connected to the exhaust line. The exhaust system further includes a by-pass line connected to the exhaust line. The exhaust system further includes a feedback path extending from an external gas source to the oscillating assembly, wherein the feedback path is separate from the exhaust line.

Abstract: An orthodontic remodeling device includes a sleeve having first and second screw holes in two ends thereof. The first and second screw holes have opposite thread directions. A first screw rod includes a first threaded portion threadedly engaged with the first screw hole and a first assembling portion exposed outside of the sleeve. A second screw hole includes a second threaded portion threadedly engaged with the second screw hole and a second assembling portion exposed outside of the sleeve. Two tooth pushing members are respectively engaged with the first and second assembling portions. Each tooth pushing member includes at least one tooth coupling ring mounted on at least one tooth of a patient for pushing the at least one tooth outward. The sleeve is rotatable to move the first and second screw rods toward or away from each other to change a relative position between the two tooth pushing members.

Abstract: An LED includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer, and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on the first-type semiconductor layer and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first bonding layer is electrically connected to the first-type semiconductor layer via the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapping with the first metal layer.

Abstract: According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure with a source and a channel over the substrate; forming a spacer over the vertical structure; etching a portion of the spacer to expose the source; forming a first metal layer over the vertical structure; and thermal annealing the first metal layer to form a bottom silicide penetrating the source; and substantially removing the spacer.

Abstract: A semiconductor device includes a source/drain region, a barrier layer, and an interlayer dielectric. The barrier layer surrounds the source/drain region. The interlayer dielectric surrounds the barrier layer. As such, the source/drain region can be protected by the barrier layer from oxidation during manufacturing of the semiconductor device, e.g., the formation of the interlayer dielectric.

Abstract: The tunnel field-effect transistor includes a drain layer, a source layer, a channel layer, a metal gate layer, and a high-k dielectric layer. The drain and source layers are of opposite conductive types. The channel layer is disposed between the drain layer and the source layer. At least one of the drain layer, the channel layer, and the source layer has a substantially constant doping concentration. The metal gate layer is disposed around the channel layer. The high-k dielectric layer is disposed between the metal gate layer and the channel layer.

Abstract: A femur supporting device includes a femoral stem having a plurality of inclined passages. The femoral stem includes an inner side and an outer side. Each inclined passage includes an outlet in the inner side and an inlet in the outer side. Each inclined passage inclines upward from the inlet to the outlet. A plurality of supporting rods extends through the inclined passages. A first engaging end of each supporting rod extends out of the outlet of one of the inclined passages. A second engaging end of each supporting rod extends out of the inlet of one of the inclined passages. The first engaging end of each supporting rod is engaged with one of a plurality of first engaging portions in a trochanter head. The second engaging end of each supporting rod is engaged with one of a plurality of second engaging portions of a fixing unit.

Abstract: Overhang reduction methods are disclosed. In some embodiments, a method includes forming a recess in a dielectric layer, the recess defining first sidewalls of the dielectric layer. The method also includes depositing a first conductive layer over an upper surface of the dielectric layer and the sidewalls of the dielectric layer, the first conductive layer having a first overhang, removing the first overhang of the first conductive layer using an etchant selected from the group consisting of a halide of the first conductive layer, Cl2, BCl3, SPM, SC1, SC2, and combinations thereof, and filling the recess with a second conductive layer.