Patents by Inventor Van H. Le

Van H. Le has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200312973
    Abstract: This disclosure illustrates a transistor with dual gate workfunctions. The transistor with dual gate workfunctions may comprise a source region, a drain region, a channel between the source region and the drain region, and a gate to control a conductivity of the channel. The gate may comprise a first portion with a first workfunction and a second portion with a second workfunction. One of the portions is nearer the source region than the other portion. The workfunction of the portion nearer the source provides a lower thermionic barrier than the workfunction of the portion further away from the source.
    Type: Application
    Filed: December 21, 2017
    Publication date: October 1, 2020
    Inventors: Sean T. MA, Abhishek SHARMA, Gilbert DEWEY, Van H. LE, Jack T. KAVALIEROS, Tahir GHANI, Benjamin CHU-KUNG, Shriram SHIVARAMAN
  • Patent number: 10784352
    Abstract: Related fields of the present disclosure are in the field of transistor devices, and in particular, FinFET device structures formed using aspect ratio trapping trench (ART) process techniques. For example, a FinFET device consistent with the present disclosure comprises a first fin structure including a first upper fin portion atop a first lower fin portion and a second fin structure including a second upper fin portion atop a second lower fin portion. The first and second upper fin structures include a Group IV material and the first and second lower fin structures include a Group III-V material.
    Type: Grant
    Filed: December 26, 2015
    Date of Patent: September 22, 2020
    Assignee: Intel Corporation
    Inventors: Sanaz K. Gardner, Willy Rachmady, Van H. Le, Matthew V. Metz, Seiyon Kim, Ashish Agrawal, Jack T. Kavalieros
  • Publication number: 20200287053
    Abstract: Described herein are apparatuses, systems, and methods associated with metal-assisted transistors. A single crystal semiconductor material may be seeded from a metal. The single crystal semiconductor material may form a channel region, a source, region, and/or a drain region of the transistor. The metal may form the source contact or drain contact, and the source region, channel region, and drain region may be stacked vertically on the source contact or drain contact. Alternatively, a metal-assisted semiconductor growth process may be used to form a single crystal semiconductor material on a dielectric material adjacent to the metal. The portion of the semiconductor material on the dielectric material may be used to form the transistor. Other embodiments may be described and claimed.
    Type: Application
    Filed: December 29, 2017
    Publication date: September 10, 2020
    Inventors: Van H. LE, Ashish AGRAWAL, Seung Hoon SUNG, Abhishek A. SHARMA, Ravi PILLARISETTY
  • Publication number: 20200287006
    Abstract: Embodiments herein describe techniques for a thin-film transistor (TFT), which may include a gate electrode above a substrate and a channel layer above the gate electrode. A source electrode may be above the channel layer and adjacent to a source area of the channel layer, and a drain electrode may be above the channel layer and adjacent to a drain area of the channel layer. A passivation layer may be above the channel layer and between the source electrode and the drain electrode, and a top dielectric layer may be above the gate electrode, the channel layer, the source electrode, the drain electrode, and the passivation layer. In addition, an air gap may be above the passivation layer and below the top dielectric layer, and between the source electrode and the drain electrode. Other embodiments may be described and/or claimed.
    Type: Application
    Filed: December 27, 2017
    Publication date: September 10, 2020
    Inventors: Abhishek A. SHARMA, Van H. LE, Li Huey TAN, Tristan TRONIC, Benjamin CHU-KUNG
  • Publication number: 20200287022
    Abstract: Methods of selectively nitriding surfaces of semiconductor devices are disclosed. For example, a hardmask is formed on the top portion of the fins to create SOI structure. The hardmask may be formed by nitriding the top portion of the fin. In other embodiments, silicon nitride is grown on the top portion of the fin to form the hard masks. In another example, internal spacers are formed between adjacent nanowires in a gate-all-around structure. The internal spacers may be formed by nitriding the remaining interlayer material between the channel region and source and drain regions.
    Type: Application
    Filed: May 22, 2020
    Publication date: September 10, 2020
    Inventors: Van H. LE, Scott B. CLENDENNING, Martin M. MITAN, Szuya S. LIAO
  • Publication number: 20200279953
    Abstract: A thin-film transistor includes a gate electrode, a gate dielectric on the gate electrode, a first layer including a source region, a drain region, and a semiconductor region above and in direct contact with the gate dielectric and physically connecting the source and drain regions, and a second layer including an insulator material on the semiconductor region. The semiconductor region has less vertical thickness than the source and drain regions. In an embodiment, the thickness of the semiconductor region is no more than half that of the source and drain regions. In another embodiment, the second layer physically connects and electrically separates the source and drain regions. In yet another embodiment, a memory cell includes this transistor and a capacitor electrically connected to the drain region, the gate electrode being electrically connected to a wordline and the source region being electrically connected to a bitline.
    Type: Application
    Filed: October 12, 2017
    Publication date: September 3, 2020
    Applicant: Intel Corporation
    Inventors: Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Tahir Ghani, Yih Wang
  • Publication number: 20200279850
    Abstract: Examples herein relate to a memory device comprising an eDRAM memory cell, the eDRAM memory cell can include a write circuit formed at least partially over a storage cell and a read circuit formed at least partially under the storage cell; a compute near memory device bonded to the memory device; a processor; and an interface from the memory device to the processor. In some examples, circuitry is included to provide an output of the memory device to emulate output read rate of an SRAM memory device comprises one or more of: a controller, a multiplexer, or a register. Bonding of a surface of the memory device can be made to a compute near memory device or other circuitry. In some examples, a layer with read circuitry can be bonded to a layer with storage cells. Any layers can be bonded together using techniques described herein.
    Type: Application
    Filed: March 23, 2020
    Publication date: September 3, 2020
    Inventors: Abhishek SHARMA, Noriyuki SATO, Sarah ATANASOV, Huseyin Ekin SUMBUL, Gregory K. CHEN, Phil KNAG, Ram KRISHNAMURTHY, Hui Jae YOO, Van H. LE
  • Patent number: 10763349
    Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, a doped layer, and a barrier layer disposed between the doped layer and the quantum well layer; and gates disposed above the quantum well stack. The doped layer may include a first material and a dopant, the first material may have a first diffusivity of the dopant, the barrier layer may include a second material having a second diffusivity of the dopant, and the second diffusivity may be less than the first diffusivity.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: September 1, 2020
    Assignee: Intel Corporation
    Inventors: Ravi Pillarisetty, Van H. Le, Jeanette M. Roberts, James S. Clarke, Zachary R. Yoscovits, David J. Michalak
  • Patent number: 10763347
    Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum processing device may include: a quantum well stack having alternatingly arranged relaxed and strained layers; and a plurality of gates disposed above the quantum well stack to control quantum dot formation in the quantum well stack.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: September 1, 2020
    Assignee: Intel Corporation
    Inventors: Payam Amin, Nicole K. Thomas, James S. Clarke, Jessica M. Torres, Ravi Pillarisetty, Hubert C. George, Kanwaljit Singh, Van H. Le, Jeanette M. Roberts, Roman Caudillo, Zachary R. Yoscovits, David J. Michalak
  • Patent number: 10748993
    Abstract: Transistor structures having channel regions comprising alternating layers of compressively and tensilely strained epitaxial materials are provided. The alternating epitaxial layers can form channel regions in single and multigate transistor structures. In alternate embodiments, one of the two alternating layers is selectively etched away to form nanoribbons or nanowires of the remaining material. The resulting strained nanoribbons or nanowires form the channel regions of transistor structures. Also provided are computing devices comprising transistors comprising channel regions comprised of alternating compressively and tensilely strained epitaxial layers and computing devices comprising transistors comprising channel regions comprised of strained nanoribbons or nanowires.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: August 18, 2020
    Assignee: Intel Corporation
    Inventors: Van H. Le, Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros
  • Publication number: 20200258884
    Abstract: Techniques and mechanisms for providing a complementary metal-oxide-semiconductor (CMOS) circuit which includes a group III-nitride (III-N) material. In an embodiment, an n-type transistor of the CMOS circuit comprises structures which are variously disposed on a group III-N semiconductor material. The n-type transistor is coupled to a p-type transistor of the CMOS circuit, wherein a channel region of the p-type transistor comprises a group III-V semiconductor material. The channel region is configured to conduct current along a first direction, where a surface portion of the group III-N semiconductor material extends along a second direction perpendicular to the second direction. In another embodiment, the group III-N semiconductor material includes a gallium-nitride (GaN) compound, and the group III-V semiconductor material includes a nanopillar of an indium antimonide (InSb) compound.
    Type: Application
    Filed: September 29, 2017
    Publication date: August 13, 2020
    Applicant: INTEL CORPORATION
    Inventors: Willy Rachmady, Ravi Pillarisetty, Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Van H. Le
  • Patent number: 10734488
    Abstract: Embodiments related to transistors and integrated circuits having aluminum indium phosphide subfins and germanium channels, systems incorporating such transistors, and methods for forming them are discussed.
    Type: Grant
    Filed: September 11, 2015
    Date of Patent: August 4, 2020
    Assignee: Intel Corporation
    Inventors: Matthew V. Metz, Willy Rachmady, Harold W. Kennel, Van H. Le, Benjamin Chu-Kung, Jack T. Kavalieros, Gilbert Dewey
  • Patent number: 10727339
    Abstract: Vertical semiconductor devices having selectively regrown top contacts and method of fabricating vertical semiconductor devices having selectively regrown top contacts are described. For example, a semiconductor device includes a substrate having a surface. A first source/drain region is disposed on the surface of the substrate. A vertical channel region is disposed on the first source/drain region and has a first width parallel with the surface of the substrate. A second source/drain region is disposed on the vertical channel region and has a second width parallel with and substantially greater than the first width. A gate stack is disposed on and completely surrounds a portion of the vertical channel region.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: July 28, 2020
    Assignee: Intel Corporation
    Inventors: Benjamin Chu-Kung, Gilbert Dewey, Van H. Le, Jack T. Kavalieros, Marko Radosavljevic, Ravi Pillarisetty, Han Wui Then, Niloy Mukherjee, Sansaptak Dasgupta
  • Patent number: 10727138
    Abstract: A monocrystalline semiconductor layer is formed on a conductive layer on an insulating layer on a substrate. The conductive layer is a part of an interconnect layer. The monocrystalline semiconductor layer extends laterally on the insulating layer. Other embodiments may be described and/or claimed.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: July 28, 2020
    Assignee: Intel Corporation
    Inventors: Van H. Le, Marko Radosavljevic, Benjamin Chu-Kung, Rafael Rios, Gilbert Dewey
  • Publication number: 20200235246
    Abstract: Techniques are disclosed for forming thin-film transistors (TFTs) with low contact resistance. As disclosed in the present application, the low contact resistance can be achieved by intentionally thinning one or both of the source/drain (S/D) regions of the thin-film layer of the TFT device. As the TFT layer may have an initial thickness in the range of 20-65 nm, the techniques for thinning the S/D regions of the TFT layer described herein may reduce the thickness in one or both of those S/D regions to a resulting thickness of 3-10 nm, for example. Intentionally thinning one or both of the S/D regions of the TFT layer induces more electrostatic charges inside the thinned S/D region, thereby increasing the effective dopant in that S/D region. The increase in effective dopant in the thinned S/D region helps lower the related contact resistance, thereby leading to enhanced overall device performance.
    Type: Application
    Filed: January 10, 2018
    Publication date: July 23, 2020
    Applicant: INTEL CORPORATION
    Inventors: Abhishek A. Sharma, Van H. Le, Li Huey Tan, Tristan A. Tronic, Benjamin Chu-Kung, Jack T. Kavalieros, Tahir Ghani
  • Patent number: 10720508
    Abstract: Methods of selectively nitriding surfaces of semiconductor devices are disclosed. For example, a hardmask is formed on the top portion of the fins to create SOI structure. The hardmask may be formed by nitriding the top portion of the fin. In other embodiments, silicon nitride is grown on the top portion of the fin to form the hard masks. In another example, internal spacers are formed between adjacent nanowires in a gate-all-around structure. The internal spacers may be formed by nitriding the remaining interlayer material between the channel region and source and drain regions.
    Type: Grant
    Filed: September 25, 2015
    Date of Patent: July 21, 2020
    Assignee: Intel Corporation
    Inventors: Van H. Le, Scott B. Clendenning, Martin M. Mitan, Szuya S. Liao
  • Publication number: 20200227535
    Abstract: Thin film transistor structures and processes are disclosed that include stacked nanowire bodies to mitigate undesirable short channel effects, which can occur as gate lengths scale down to sub-100 nanometer (nm) dimensions, and to reduce external contact resistance. In an example embodiment, the disclosed structures employ a gate-all-around architecture, in which the gate stack (including a high-k dielectric layer) wraps around each of the stacked channel region nanowires (or nanoribbons) to provide improved electrostatic control. The resulting increased gate surface contact area also provides improved conduction. Additionally, these thin film structures can be stacked with relatively small spacing (e.g., 1 to 20 nm) between nanowire bodies to increase integrated circuit transistor density. In some embodiments, the nanowire body may have a thickness in the range of 1 to 20 nm and a length in the range of 5 to 100 nm.
    Type: Application
    Filed: January 12, 2018
    Publication date: July 16, 2020
    Applicant: INTEL CORPORATION
    Inventors: Seung Hoon Sung, Abhishek A. Sharma, Van H. Le, Gilbert Dewey, Jack T. Kavalieros, Tahir Ghani
  • Publication number: 20200227568
    Abstract: Embodiments herein describe techniques for a semiconductor device, which may include a substrate, and a U-shaped channel above the substrate. The U-shaped channel may include a channel bottom, a first channel wall and a second channel wall parallel to each other, a source area, and a drain area. A gate dielectric layer may be above the substrate and in contact with the channel bottom. A gate electrode may be above the substrate and in contact with the gate dielectric layer. A source electrode may be coupled to the source area, and a drain electrode may be coupled to the drain area. Other embodiments may be described and/or claimed.
    Type: Application
    Filed: September 29, 2017
    Publication date: July 16, 2020
    Inventors: Van H. LE, Abhishek A. SHARMA, Benjamin CHU-KUNG, Gilbert DEWEY, Ravi PILLARISETTY, Miriam R. RESHOTKO, Shriram SHIVARAMAN, Li Huey TAN, Tristan A. TRONIC, Jack T. KAVALIEROS
  • Publication number: 20200220024
    Abstract: A back-gated thin-film transistor (TFT) includes a gate electrode, a gate dielectric on the gate electrode, an active layer on the gate dielectric and having source and drain regions and a semiconductor region physically connecting the source and drain regions, a capping layer on the semiconductor region, and a charge trap layer on the capping layer. In an embodiment, a memory cell includes this back-gated TFT and a capacitor, the gate electrode being electrically connected to a wordline and the source region being electrically connected to a bitline, the capacitor having a first terminal electrically connected to the drain region, a second terminal, and a dielectric medium electrically separating the first and second terminals. In another embodiment, an embedded memory includes wordlines extending in a first direction, bitlines extending in a second direction crossing the first direction, and several such memory cells at crossing regions of the wordlines and bitlines.
    Type: Application
    Filed: September 29, 2017
    Publication date: July 9, 2020
    Applicant: Intel Corporation
    Inventors: Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Cory E. Weber, Sean T. Ma, Tahir Ghani, Shriram Shivaraman, Gilbert Dewey
  • Publication number: 20200211911
    Abstract: A semiconductor device may include a first gate electrode and a second gate electrode. A first channel area and a second channel area may be above the first gate electrode, where the first channel area may include a first type channel material, and the second channel area may include a second type channel material. A third channel area and a fourth channel area may be above the second gate electrode, where the third channel area may include the first type channel material, and the fourth channel area may include the second type channel material. The third channel area may be separated from the first channel area by a spacer. An inverter may include the first gate electrode, the first channel area, and the second channel area, while another inverter may include the second gate electrode, the third channel area, and the fourth channel area. Other embodiments may be described/claimed.
    Type: Application
    Filed: September 29, 2017
    Publication date: July 2, 2020
    Inventors: Abhishek A. SHARMA, Van H. LE, Gilbert DEWEY, Willy RACHMADY