Abstract: A cache log module stores an ordered log of cache storage operations sequentially within the physical address space of a non-volatile storage device. The log may be divided into segments, each comprising a set of log entries. Data admitted into the cache may be associated with respective log segments. Cache data may be associated with the log segment that corresponds to the cache storage operation in which the cache data was written into the cache. The backing store of the data may be synchronized to a particular log segment by identifying the cache data pertaining to the segment (using the associations), and writing the identified data to the backing store. Data lost from the cache may be recovered from the log by, inter alia, committing entries in the log after the last synchronization time of the backing store.

Abstract: Certain embodiments of the present application describe a carbon-based electrode with graphene platelets. The addition of graphene platelets is intended to improve properties of the electrode. These properties include, but are not limited to, physical, electrical, and biochemical properties of the electrode. Enhanced reproducibility of these properties can also result from the addition of the graphene platelets.

Abstract: A storage module may be configured to service I/O requests according to different persistence levels. The persistence level of an I/O request may relate to the storage resource(s) used to service the I/O request, the configuration of the storage resource(s), the storage mode of the resources, and so on. In some embodiments, a persistence level may relate to a cache mode of an I/O request. I/O requests pertaining to temporary or disposable data may be serviced using an ephemeral cache mode. An ephemeral cache mode may comprise storing I/O request data in cache storage without writing the data through (or back) to primary storage. Ephemeral cache data may be transferred between hosts in response to virtual machine migration.

Abstract: An I/O manager may be configured to service I/O requests pertaining to ephemeral data of a virtual machine using a storage device that is separate from and/or independent of a primary storage resource to which the I/O request is directed. Ephemeral data may be removed from ephemeral storage in response to a removal condition and/or trigger, such as a virtual machine reboot. The I/O manager may manage transfers of ephemeral virtual machine data in response to virtual machines migrating between host computing devices. The I/O manager may be further configured to cache virtual machine data, and/or manage shared file data that is common to two or more virtual machines operating on a host computing device.

Abstract: A method and apparatus for maintaining an item-to-node mapping among nodes in a distributed cluster is provided. Each node maintains locally-stored system-state information indicating that node's understanding of which master nodes are alive and dead. Instead of employing a global item-to-node mapping, each node acts upon a locally determined mapping based on its locally-stored system-state information. For any two nodes with the same locally-stored system-state information, the locally determined mapping is the same. A node updates its locally-stored system-state information upon detecting a node failure or receiving a message from another node indicating different locally-stored system-state information. The new locally-stored system-state information is transmitted on a need-to-know basis, and consequently nodes with different item-to-node mappings may operate concurrently.

Abstract: A storage module may be configured to service I/O requests according to different persistence levels. The persistence level of an I/O request may relate to the storage resource(s) used to service the I/O request, the configuration of the storage resource(s), the storage mode of the resources, and so on. In some embodiments, a persistence level may relate to a cache mode of an I/O request. I/O requests pertaining to temporary or disposable data may be serviced using an ephemeral cache mode. An ephemeral cache mode may comprise storing I/O request data in cache storage without writing the data through (or back) to primary storage. Ephemeral cache data may be transferred between hosts in response to virtual machine migration.

Abstract: A storage module may be configured to service I/O requests according to different persistence levels. The persistence level of an I/O request may relate to the storage resource(s) used to service the I/O request, the configuration of the storage resource(s), the storage mode of the resources, and so on. In some embodiments, a persistence level may relate to a cache mode of an I/O request. I/O requests pertaining to temporary or disposable data may be serviced using an ephemeral cache mode. An ephemeral cache mode may comprise storing I/O request data in cache storage without writing the data through (or back) to primary storage. Ephemeral cache data may be transferred between hosts in response to virtual machine migration.

Abstract: A virtual machine cache provides for maintaining a working set of the cache during a transfer between virtual machine hosts. In response to a virtual machine transfer, the previous host of the virtual machine is configured to retain cache data of the virtual machine, which may include both cache metadata and data that has been admitted into the cache. The cache data may be transferred to the destination host via a network (or other communication mechanism). The destination host populates a virtual machine cache with the transferred cache data to thereby reconstruct the working state of the cache.

Abstract: A virtual machine cache provides for maintaining a working set of the cache during a transfer between virtual machine hosts. In response to the transfer, a previous host retains cache data of the virtual machine, which is provided to the new host of the virtual machine. The cache data may be transferred via a network transfer.

Abstract: The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the number of movements of a switching element in the MEMS device. Rather than returning to a ground state between cycles, the switching element can remain in the same state if both cycles necessitate the same capacitance. For example, if in both a first and second cycle, the switching element of the MEMS device is in a state of high capacitance the switching element can remain in place between the first and second cycle rather than move to the ground state. Even if the polarity of the capacitance is different in successive cycles, the switching element can remain in place and the polarity can be switched. Because the switching element remains in place between cycles, the switching element, while having the same finite number of movements, should have a longer lifetime.

Abstract: The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

Abstract: The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

Abstract: Systems and methods for managing data input/output operations are described that include virtual machines operating with a shared storage within a host. In such a system, a computer-implemented method is provided for dynamically provisioning cache storage while operating system applications continue to operate, including stalling the virtual machine's local cache storage operations, changing the provision of cache storage size; and resuming the operations of the virtual machine.

Abstract: Certain embodiments of the present application describe a carbon-based electrode with graphene platelets. The addition of graphene platelets is intended to improve properties of the electrode. These properties include, but are not limited to, physical, electrical, and biochemical properties of the electrode. Enhanced reproducibility of these properties can also result from the addition of the graphene platelets.

Abstract: A multi-level cache comprises a plurality of cache levels, each configured to cache I/O request data pertaining to I/O requests of a different respective type and/or granularity. The multi-level cache may comprise a file-level cache that is configured to cache I/O request data at a file-level of granularity. A file-level cache policy may comprise file selection criteria to distinguish cacheable files from non-cacheable files. The file-level cache may monitor I/O requests within a storage stage, and may service I/O requests from a cache device.

Abstract: A multi-level cache comprises a plurality of cache levels, each configured to cache I/O request data pertaining to I/O requests of a different respective type and/or granularity. A cache device manager may allocate cache storage space to each of the cache levels. Each cache level maintains respective cache metadata that associates I/O request data with respective cache address. The cache levels monitor I/O requests within a storage stack, apply selection criteria to identify cacheable I/O requests, and service cacheable I/O requests using the cache storage device.

Abstract: Systems and methods for managing data input/output operations are described. In one aspect, a device driver identifies a data read operation generated by a virtual machine in a virtual environment. The device driver is located in the virtual machine and the data read operation identifies a physical cache address associated with the data requested in the data read operation. A determination is made regarding whether data associated with the data read operation is available in a cache associated with the virtual machine.

Abstract: The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

Abstract: The present invention generally relates to the formation of a micro-electromechanical system (MEMS) cantilever switch in a complementary metal oxide semiconductor (CMOS) back end of the line (BEOL) process. The cantilever switch is formed in electrical communication with a lower electrode in the structure. The lower electrode may be either blanket deposited and patterned or simply deposited in vias or trenches of the underlying structure. The excess material used for the lower electrode is then planarized by chemical mechanical polishing or planarization (CMP). The cantilever switch is then formed over the planarized lower electrode.

Abstract: The present invention generally relates to the formation of a micro-electromechanical system (MEMS) cantilever switch in a complementary metal oxide semiconductor (CMOS) back end of the line (BEOL) process. The cantilever switch is formed in electrical communication with a lower electrode in the structure. The lower electrode may be either blanket deposited and patterned or simply deposited in vias or trenches of the underlying structure. The excess material used for the lower electrode is then planarized by chemical mechanical polishing or planarization (CMP). The cantilever switch is then formed over the planarized lower electrode.