Abstract: The present disclosure provides systems and methods for generating and transmitting, or applying, a noise profile based on a determined environment a host device is operating in. The host device may receive data from one or more sensors, location information, and/or device information. The sensors may include a pressure, temperature, light, location, or humidity sensor. The location information may include data from a global positioning system and/or connectivity signals, such as multicast DNS and/or Bluetooth broadcast. Device information may include schedule data and/or device state information. The data from one or more sensors, the location information, and/or the device information may be aggregated to determine the environment in which the host device is operating in. Based on the determined environment, a noise profile generator may generate a noise profile. The noise profile may define gains to be applied to audio signals being output to the user.

Abstract: A semiconductor device and a manufacturing method thereof, a memory and a memory system are disclosed. The method includes: providing a substrate and stacked layers on the substrate, the stacked layers comprising interlayer sacrificial layers and interlayer insulating layers which are alternately stacked; removing part of the interlayer sacrificial layer to form a gate gap; sequentially forming a protection layer and a gate structure in the gate gap; forming a contact hole extending from a side of the stacked layers facing away from the substrate into a remaining interlayer sacrificial layer and exposing the protection layer; removing the protection layer exposed in the contact hole to expose the gate structure; forming a contact structure in the contact hole in such a way that the contact structure is connected with the gate structure.

Abstract: In certain aspects, provided herein are methods and systems for methylation quantification based on a Cellular Het-crogeneity-Adjusted cLonal Methylation (CHALM) quantification methodology described herein. Disclosed herein, in some aspects, are methods for identifying the methylation status of a biomarker in a single cell. In certain aspects, provided herein are methods for generating a methylation profile of a biomarker associated with a tumor species.

Abstract: A method for end-to-end speech enhancement based on a neural network, including: obtaining a time-domain smoothing feature of an original speech signal by performing feature extraction on the original speech signal using a time-domain convolution kernel; and, obtaining an enhanced speech signal by performing combined feature extraction on the original speech signal and the time-domain smoothing feature of the original speech signal.

Abstract: A power converter includes a power factor correction (PFC) circuit and a controller. The controller acquires a switching frequency based on an instantaneous value of the input voltage, and acquires an upper limit frequency and a lower limit frequency based on an effective value of an input current. When the controller determines that the effective value is greater than a medium load threshold, an operation mode of the PFC circuit is switched from a critical conduction mode or a triangular current mode to a continuous conduction mode based on the switching frequency being less than the lower limit frequency, and to limit the switching frequency to the lower limit frequency. Furthermore, the controller adjusts the lower limit frequency between a first lower limit frequency and a second lower limit frequency based on the increase or decrease of the effective value.

Abstract: A method for forming a 3D memory device includes forming an array wafer having a memory array layer and a CMOS layer stacked together, including: forming the CMOS layer having HV circuitry of a plurality of peripheral devices, and forming a plurality of memory cells and a string structure in the memory array layer. The memory array layer includes at least one cell region for forming the memory cells and at least one string structure region for forming the string structure, and the CMOS layer includes at least one string driver region. The method also includes forming a CMOS wafer having LV circuitry and LLV circuitry of the plurality of peripheral devices, the CMOS wafer including at least one page buffer region; bonding the array wafer and the CMOS wafer at a bonding interface; and forming the 3D memory device based on the bonded array wafer and CMOS wafer.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes an interconnect dielectric layer over a substrate. An interconnect via is within the interconnect dielectric layer, and an interconnect wire is over the interconnect via and within the interconnect dielectric layer. A protective layer surrounds the interconnect via. The interconnect via vertically extends through the protective layer to below a bottom of the protective layer. The protective layer continuously extends from along an outer sidewall of the interconnect via to along an outer sidewall of the interconnect wire in a first cross-sectional view.

Abstract: A medical document analysis method includes following steps: performing recursive search based on keywords extracted from first medical documents to obtain second medical documents; analyzing feature labels of the second medical documents; projecting the second medical documents onto a multi-dimensional map according to the feature labels; estimating second symptoms from a first symptom; selecting third medical documents based on the first symptom and the second symptom from the multi-dimensional map; analyzing correlation between the third medical documents and their respective feature labels in the multi-dimensional map to form a label topology map; and selecting a target branch path from branch paths in the label topology map, and displaying information about the target branch path.

Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method includes depositing an amorphous interlayer atop a first layer on a substrate, wherein the first layer is a metal-containing layer, and depositing a metal layer atop the amorphous interlayer.

Abstract: A method includes depositing an epitaxial stack over a substrate, the epitaxial stack comprising alternating first semiconductor layers and second semiconductor layers, wherein the first semiconductor layers comprise a different semiconductor composition from that of the second semiconductor layers; forming a dielectric wall in the epitaxial stack; removing a first subset of the first semiconductor layers on a first side of the dielectric wall, while leaving a first subset of the second semiconductor layers on the first side of the dielectric wall; removing a second subset of the second semiconductor layers on a second side of the dielectric wall, while leaving a second subset of the first semiconductor layers on the second side of the dielectric wall; forming a first gate structure around the first subset of the second semiconductor layers; and forming a second gate structure around the second subset of the first semiconductor layers.

Abstract: A semiconductor device includes a substrate having a first region and a second region of opposite conductivity types, an isolation feature over the substrate, a first fin protruding from the substrate in the first region, a first epitaxial feature over the first fin, a second fin protruding from the substrate in the second region, and a second epitaxial feature over the second fin. The isolation feature includes a first portion disposed on sidewalls of the first fin, a second portion disposed on sidewalls of the second fin, and a third portion located between the first fin and the second fin. The third portion has a thickness larger than the first portion and the second portion.

Abstract: In some implementations, an emitter assembly includes a vertical cavity surface emitting laser (VCSEL) chip including a plurality of VCSELs. The emitter assembly may include a plurality of conductive pillars electrically connected to the VCSEL chip. The emitter assembly may include a dummy pillar, electrically isolated from the VCSEL chip, mating with a slot. The VCSEL chip may include one of the dummy pillar or the slot.

Abstract: Technology for a memory device having memory dies flip-chip bonded to one or more interposers that are mounted to a system board is disclosed. The memory device may be an SSD and the system board may be an M.2 board. A memory controller die may be bonded to one of the interposer boards. In one aspect, the memory controller die is flip-chip bonded to the interposer board. In one aspect, a heat sink is attached to a top surface of the flip-chip bonded controller die and to top surfaces of a group of the memory dies. Neither the memory dies nor the interposers are covered with a mold compound. Performance of the memory device is improved by, for example, lower inductance and improved heat dissipation.

Abstract: In some implementations, an emitter assembly includes a vertical cavity surface emitting laser (VCSEL) chip including a plurality of VCSELs. The emitter assembly may include a plurality of conductive pillars electrically connected to the VCSEL chip, and a conductive pillar, of the plurality of conductive pillars, may have a solder cap at an end of the conductive pillar. The emitter assembly may include a pin extending into the solder cap.

Abstract: In some implementations, an emitter assembly includes a vertical cavity surface emitting laser (VCSEL) chip including a plurality of VCSELs respectively associated with a plurality of first electrical contacts. A first spacing of the plurality of first electrical contacts may define a first pitch. The emitter assembly may include a redistribution layer, disposed on the VCSEL chip, to increase the first pitch of the plurality of first electrical contacts. The emitter assembly may include a carrier having a plurality of second electrical contacts. A second spacing of the plurality of second electrical contacts may define a second pitch greater than the first pitch. The emitter assembly may include a plurality of conductive pillars that electrically connect the plurality of first electrical contacts and the plurality of second electrical contacts via the redistribution layer. The plurality of conductive pillars may be arranged according to the second spacing.

Abstract: The present invention provides a high electron mobility transistor, which includes a substrate, a buffer layer, a channel layer, a first semiconductor epitaxial structure, a second semiconductor epitaxial structure, a drain, a source and a gate. The first semiconductor epitaxial structure is located on the channel layer and sequentially includes a first aluminum gallium nitride layer, a supply layer and a second aluminum gallium nitride layer, and the first semiconductor epitaxial structure is formed with a hollow part extending from a top surface of the second aluminum gallium nitride layer toward the channel layer. The second semiconductor epitaxial structure is located in the hollow part and sequentially includes an aluminum gallium nitride layer and a P-type gallium nitride layer. The drain and the source are respectively arranged on the second aluminum gallium nitride layer, and the gate is arranged on the P-type gallium nitride layer.

Abstract: In some implementations, an emitter assembly includes a vertical cavity surface emitting laser (VCSEL) chip including a plurality of VCSELs in a bottom-emitting configuration, and multiple VCSELs, of the plurality of VCSELs, may be grouped in a cluster. The emitter assembly may include a carrier, and the VCSEL chip may be in a flip chip configuration with the carrier. The emitter assembly may include a conductive pillar electrically connected to the multiple VCSELs grouped in the cluster.

Abstract: Disclosed are a display panel and a display device, wherein the display panel includes an opposing substrate, a liquid crystal layer, and an array substrate, the liquid crystal layer is disposed between the opposing substrate and the array substrate; the array substrate includes a base, a first inorganic film layer and a conductive layer, the first inorganic film layer is disposed on the base and has a refractive index greater than or equal to 1.4 and less than or equal to 1.6, the conductive layer is disposed on the base, and the conductive layer is adjacent to the first inorganic film layer.

Abstract: A logical-to-physical (L2P) data structure comprising a plurality of L2P table entries is maintained on the volatile memory device. Each L2P table entry comprises a block number and a page table index corresponding to the non-volatile memory device. A plurality of physical-to-logical (P2L) data structures each comprising a plurality of P2L table entries is maintained on the volatile memory device. Each of the plurality of P2L data structures corresponds to a portion of the L2P data structure.

Abstract: Some embodiments relate to an integrated chip including a semiconductor substrate and a pixel array comprising a plurality of photodetectors in the semiconductor substrate. The pixel array further comprises a plurality of transistors on a frontside of the semiconductor substrate. A backside ground (BSGD) structure extends into a backside of the semiconductor substrate, opposite the frontside, and further surrounding the pixel array along a periphery of the pixel array. The BSGD structure has a first sloped sidewall extending from a bottom surface of the BSGD structure that is recessed into the semiconductor substrate.