Abstract: A semiconductor includes a substrate, a semiconductor fin, an STI structure, a fin sidewall spacer, and a doped silicon layer. The semiconductor fin extends from the substrate. The STI structure laterally surrounds a lower portion of the semiconductor fin. The fin sidewall spacer extends along a middle portion of the semiconductor fin that is above the lower portion of the semiconductor fin. The doped silicon layer wraps around three sides of an upper portion of the semiconductor fin that is above the middle portion of the semiconductor fin.

Abstract: Systems and methods for conducting critical dimension metrology are disclosed. According to certain embodiments, a charged particle beam apparatus generates a beam for imaging a first area and a second area. Measurements are acquired corresponding to a first feature in the first area, and measurements are acquired corresponding to a second feature in the second area. The first area and the second area are at separate locations on a sample. A combined measurement is calculated based on the measurements of the first feature and the measurements of the second feature.

Abstract: Systems and methods for detecting defects are disclosed. According to certain embodiments, a method of performing image processing includes acquiring one or more images of a sample, performing first image analysis on the one or more images, identifying a plurality of first features in the one or more images, determining pattern data corresponding to the plurality of first features, selecting at least one of the plurality of first features based on the pattern data, and performing second image analysis of the at least one of the plurality of first features. Methods may also include determining defect probability of the plurality of first features based on the pattern data. Selecting the at least one of the plurality of first features may be based on the defect probability.

Abstract: A method for determining corrections to features of a mask. The method includes obtaining (i) a pattern group for a design layout, and (ii) defect inspection data of a substrate imaged using the mask used in the patterning process for the design layout; determining, based on the defect inspection data, a defect map associated with the pattern group, wherein the defect map comprises locations of assist features having a relatively higher probability of being printed on the substrate compared to other patterns of the design layout; and determining, via simulating an optical proximity correction process using data associated with the defect map, corrections to the features of the mask.

Abstract: A semiconductor device includes a semiconductor substrate, first gate structure, a first metal layer, a first protective layer, and a first contact plug. The first gate structure includes a plurality of first U-shaped layers stacked one another between the first gate spacers in a cross-sectional view and first gate spacers on opposite sides of the first U-shaped layers. The first metal layer is over the first U-shaped layers and has a different shape than the first U-shaped layers in the cross-sectional view. The first protective layer is over the first metal layer and between the first gate spacers. The first contact plug extends through the first protective layer and the first metal layer, and is in contact with the first gate structure.

Abstract: The present application provides an apparatus and a method for measuring apparent permeability of a tight rock core, the apparatus comprises: a rock core holder, a first high-pressure injection pump, a second high-pressure injection pump, a micro-differential pressure meter, a micro-flow meter, a first pressure control unit, a second pressure control unit, a first valve, a second valve, a third valve, and a fourth valve; the first pressure control unit comprises: a first pressure-resistant piston container and a second pressure-resistant piston container, both of which are divided into an upper cavity and a lower cavity by a piston, the upper cavities of the first pressure-resistant piston container and the second pressure-resistant piston container are filled with gases and communicate with each other, and the lower cavity of the first pressure-resistant piston container is filled with pump pressure-transmission liquids, and the lower cavity of the second pressure-resistant piston container is filled with ex

Abstract: Embodiments regard client-side memory management in component-driven console applications. An embodiment of one or more storage mediums include instructions for performing processing of a console application on an apparatus, including downloading records from a server for a set of one or more of multiple workspaces and opening the set of workspaces in response to request by a user, and switching an active workspace from a first workspace to a second workspace of the plurality of workspaces in response to a request from the user; monitoring memory usage for the plurality of workspaces and monitoring a state of the console application; and managing the memory allocation for the console application based at least in part on the monitored memory usage and console application state.

Abstract: Disclosed is a high quality pattern mining model and method based on an improved Multi-Objective Evolutionary Algorithm (MOEA), which belongs to the technical field of data mining. By applying a three-objective pattern mining model to item management, and in combination with a comprehensive consideration on support, occupancy, and utility, an itemset easily purchased together by clients and having a high utility value may be mined, which is convenient for a supermarket manager to make a reasonable marketing strategy.

Abstract: An inspection method includes the following steps: identifying a plurality of patterns within an image; and comparing the plurality of patterns with each other for measurement values thereof. The above-mentioned inspection method uses the pattern within the image as a basis for comparison; therefore, measurement values of the plurality of pixels constructing the pattern can be processed with statistical methods and then compared, and the false rate caused by variation of a few pixels is decreased significantly. An inspection system implementing the above-mentioned method is also disclosed.

Abstract: A semiconductor structure includes a semiconductor substrate, a gate structure, an etch stop layer, a dielectric structure, and a conductive material. The gate structure is on the semiconductor substrate. The etch stop layer is over the gate structure. The dielectric structure is over the etch stop layer, in which the dielectric structure has a ratio of silicon to nitrogen varying from a middle layer of the dielectric structure to a bottom layer of the dielectric structure. The conductive material extends through the dielectric structure.

Abstract: Disclosed is a real-time object detection method deployed on a platform with limited computing resources, which belongs to the field of deep learning and image processing. In the present invention, YOLO-v3-tiny neural network is improved, Tinier-YOLO reserves the front five convolutional layers and pooling layers of YOLO-v3-tiny and makes prediction at two different scales. Fire modules in SqueezeNet, 1×1 bottleneck layers, and dense connection are introduced, so that the structure is used to achieve smaller, faster, and more lightweight network that can be run in real time on an embedded AI platform. The model size of Tinier-YOLO in the present invention is only 7.9 MB, which is only ¼ of 34.9 MB of YOLO-v3-tiny, and ? of YOLO-v2-tiny. The reduction in the model size of Tinier-YOLO does not affect real-time performance and accuracy of Tinier-YOLO. Real-time performance of Tinier-YOLO in the present invention is 21.8% higher than that of YOLO-v3-tiny and 70.8% higher than that of YOLO-v2-tiny.

Abstract: In one embodiment, an apparatus comprises a first memory array comprising a plurality of phase change memory (PCM) cells; and a controller to track a first cycle count metric based at least in part on a number of writes performed to at least a portion of the first memory array; and adjust, based on the first cycle count metric, a demarcation voltage to be applied during read operations performed on PCM cells of the first memory array.

Abstract: Disclosed herein is a method comprising: determining parameters of a recipe of charged particle beam inspection of a region on a sample, based on a second set of characteristics of the sample; inspecting the region using the recipe.

Abstract: A semiconductor device includes a semiconductor substrate, a pair of source/drain regions, and a gate stack. The pair of source/drain regions is on the semiconductor substrate. The gate stack is laterally between the source/drain regions and includes a gate dielectric layer over the semiconductor fin, a metal element-containing layer over the gate dielectric layer, and a fill metal layer over the metal element-containing layer. The metal element-containing layer has a dopant, and a concentration of the dopant in an upper portion of the metal element-containing layer is higher than a concentration of the dopant in a bottom portion of the metal element-containing layer.

Abstract: A method and system for image processing are provided in the present disclosure. The method may include obtaining a plurality of source images generated by a plurality of imaging sensors. The method may also include processing each of the plurality of source images by: retrieving a plurality of source image blocks from the source image according to block position information associated with the corresponding imaging sensor; generating, for each of the plurality of source image blocks, a target image block based on the source image block; and forming a target image based on the generated target image blocks. The method may further include generating a combined image based on the target images.

Abstract: A semiconductor device includes a source region, a drain region, a SiGe channel region, an interfacial layer, a high-k dielectric layer and a gate electrode. The source region and the drain region are over a substrate. The SiGe channel region is laterally between the source region and the drain region. The interfacial layer forms a nitrogen-containing interface with the SiGe channel region. The high-k dielectric layer is over the interfacial layer. The gate electrode is over the high-k dielectric layer.

Abstract: The present disclosure relates to systems and methods for signal transmission. The systems and methods may receive a composite multimedia signal, wherein the composite multimedia signal may be encoded in a frame format including an active zone and a blanking zone. The composite multimedia signal may be associated with a plurality of multimedia signals acquired by a plurality of acquisition devices. The systems and methods may insert one or more control signals in a predetermined section of the blanking zone. The systems and method may further transmit the one or more control signals to one or more target acquisition devices of the plurality of acquisition devices via a transmission medium.

Abstract: A method for processing and transmitting multimedia signals received from a plurality of channels are provided. The method may include receiving at least two multimedia signals from a plurality of channels, and generating a composite multimedia digital signal by coding the multimedia signals in a frame format. At least one of the multimedia signals may include a video signal. The frame format may include an active zone and a blanking zone, the active zone may be configured to encode at least part of the multimedia signals, and the blanking zone may be configured to encode format information. The method may further include converting at least part of the encoded multimedia signals in the active zone into analog signals to generate a composite multimedia signal. The method may further include transmitting the composite multimedia signal to a receiving device via a transmission medium.

Abstract: A method and system for operating a signal filter device are provided in the present disclosure. The signal filter device may include M adaptive filters, M first analysis filters, M second analysis filters, and a controller. M may be an integer above two. The method may include generating, by the M first analysis filters, M first sub-band signals based on an input signal. The method may also include generating, by the M second analysis filters, M second sub-band signals based on a reference signal. The method may further include adjusting, by the controller, the working states of the M adaptive filters based on correlations between the M first sub-band signals and the M second sub-band signals.