Abstract: An electronic device is provided. The electronic device includes a board, a first latch mechanism, and an expansion card. A controller is disposed on the board. The first latch mechanism is disposed on the board. The first latch mechanism is electrically connected to the controller. The expansion card is plugged in the first latch mechanism and disposed over the board. The expansion card is electrically connected to the controller through the first latch mechanism. The controller determines a connecting condition of the first latch mechanism according to a connecting signal provided by the expansion card.

Abstract: The present disclosure relates to surveillance systems and methods. The surveillance methods may include converting first digital multimedia data from a first initial format into a first target format and a second target format; obtaining first intelligent data based on the first digital multimedia data of the first target format; generating first analog multimedia data by performing mixing, encoding and digital-analog conversion on the first digital multimedia data of the second target format and the first intelligent data; and transmitting the first analog multimedia data via a coaxial cable.

Abstract: Disclosed are semiconductor devices including a substrate, a first transistor formed over a first portion of the substrate, wherein the first transistor comprises a first nanosheet stack including N nanosheets and a second transistor over a second portion of the substrate, wherein the second transistor comprises a second nanosheet stack including M nanosheets, wherein N is different from M in which the first and second nanosheet stacks are formed on first and second substrate regions that are vertically offset from one another.

Abstract: A probe station includes a base, a adaptor, a probe holder and a probe. The adaptor has a first portion and a second portion away from the first portion towards a first direction by a first length. The first portion connects to the base. A probe holder connects to the second portion and extends towards a second direction opposite to the first direction by a second length. The probe connects to an end of the probe holder away from the second portion and extends towards the second direction by a third length. A product of a thermal coefficient of the adaptor and the first length is equal to a sum of a product of a thermal coefficient of the probe holder and the second length and a product of a thermal coefficient of the probe and the third length.

Abstract: An image is obtained by using a charged particle beam, and a design layout information is generated to select patterns of interest. Grey levels among patterns can be compared with each other to identify abnormal, or grey levels within one pattern can be compared to a determined threshold grey level to identify abnormal.

Abstract: A heat dissipation assembly includes a condenser, an evaporator, a vapor conduit, and a liquid conduit. The condenser has a condensing chamber therein. Two ends of the vapor conduit are respectively connected to the condenser and the evaporator. Two ends of the liquid conduit are respectively connected to the condenser and the evaporator. A geometric center of the liquid conduit in the condensing chamber is lower than or equal to a geometric center of the condensing chamber.

Abstract: A defect inspection system is disclosed. According to certain embodiments, the system includes a memory storing instructions implemented as a plurality of modules. Each of the plurality of modules is configured to detect defects having a different property. The system also includes a controller configured to cause the computer system to: receive inspection data representing an image of a wafer; input the inspection data to a first module of the plurality of modules, the first module outputs a first set of points of interests (POIs) having a first property; input the first set of POIs to a second module of the plurality of modules, the second module output a second set of POIs having the second property; and report that the second set of POIs as defects having both the first property and the second property.

Abstract: An integrated circuit is disclosed, including a first conductive pattern and a second conductive pattern that are disposed in a first layer and extend in a first direction, at least one first conductive segment disposed in a second layer different from the first layer, and at least one via disposed between the first layer and the second layer. The at least one via is coupled between the at least one first conductive segment and one or both of the first conductive pattern and the second conductive pattern, at an output node of the integrated circuit. The at least one via comprises a tapered shape with a width that decreases from a first width to a second width narrower than the first width. The first width of the at least one via is greater than widths of the first conductive pattern and the second conductive pattern.

Abstract: A method for aligning a wafer image with a reference image, comprising: searching for a targeted reference position on the wafer image for aligning the wafer image with the reference image; and in response to a determination that the targeted reference position does not exist: defining a current lock position and an area that encloses the current lock position on the wafer image; computing an alignment score of the current lock position; comparing the alignment score of the current lock position with stored alignment scores of positions previously selected in relation to aligning the wafer image with the reference image; and aligning the wafer image with the reference image based on the comparison.

Abstract: Systems and methods for conducting critical dimension metrology are disclosed. According to certain embodiments, a charged particle beam apparatus generates a beam for imaging a first area and a second area. Measurements are acquired corresponding to a first feature in the first area, and measurements are acquired corresponding to a second feature in the second area. The first area and the second area are at separate locations on a sample. A combined measurement is calculated based on the measurements of the first feature and the measurements of the second feature.

Abstract: Disclosed herein is a cleaning device for orthokeratology lens, comprising a housing, a cap, a gear module, two cleaning shaft, two cleaning head, and a rotating shaft. The housing comprises two orthokeratology lens bases and an opening. The cap is disposed on the opening. The cleaning shaft comprises a first end connecting to the gear module and a second end. The cleaning head is disposed on the second end of the cleaning shaft. The rotating shaft connects to the gear module.

Abstract: A distributed system, such as a distributed storage system in a virtualized computing environment and having storage nodes arranged in a cluster, is provided by management server with a transition period between non-encryption and encryption modes of operation. The transition period enables all of the nodes to complete a transition from the non-encryption mode of operation to the encryption mode of operation, without loss of data-in-transit (DIT). An auto-remediation feature is provided by the management server to the cluster, so as to fix inconsistent state(s) of one or more nodes in the cluster.

Abstract: The present disclosure relates to systems and methods for automatic exposure control. The methods may include obtaining a first frame and a second frame of a current scene from a camera, wherein a ratio of a first exposure time of the first frame to a second exposure time of the second frame is a first exposure ratio; obtaining a first average luminance of a brightest region in the second frame; obtaining a second average luminance of a darkest region in the first frame; and determining a dynamic range of the current scene based on the first exposure ratio, the first average luminance, and the second average luminance.

Abstract: The present disclosure relates to systems and methods for coding. The methods may include receiving at least two contexts, for each of the at least two contexts, obtaining at least one coding parameter corresponding to the context from at least one lookup table, determining a probability interval value corresponding to the context based on a previous probability interval value and the at least one coding parameter, determining a normalized probability interval value corresponding to the context by performing a normalization operation on the probability interval value, determining a probability interval lower limit corresponding to the context based on a previous probability interval lower limit and the at least one coding parameter, determining a normalized probability interval lower limit corresponding to the context by performing the normalization operation on the probability interval lower limit, and outputting at least one byte based on the normalized probability interval lower limit.

Abstract: Distributed storage system and method for transmitting storage-related messages between host computers in a distributed storage system uses a handshake operation of a first-type communication connection between a source data transport daemon of a source host computer and a target data transport daemon of a target host computer to derive a symmetric key at each of the source and target data transport daemons. The two symmetric keys are sent to a source data transport manager of the source host computer and to a target data transport manager of the target host computer. The source and target data transport managers then use the same symmetric keys to encrypt and decrypt storage-related messages that are transmitted from the source data transport manager to the target data transport manager through multiple second-type communication connections between the source and target data transport managers.

Abstract: A semiconductor device includes a semiconductor substrate having a channel region. A gate dielectric layer is over the channel region of the semiconductor substrate. A work function metal layer is over the gate dielectric layer. The work function metal layer has a bottom portion, an upper portion, and a work function material. The bottom portion is between the gate dielectric layer and the upper portion. The bottom portion has a first concentration of the work function material, the upper portion has a second concentration of the work function material, and the first concentration is higher than the second concentration. A gate electrode is over the upper portion of the work function metal layer.

Abstract: A probe station includes a base, a adaptor, a probe holder and a probe. The adaptor has a first portion and a second portion away from the first portion towards a first direction by a first length. The first portion connects to the base. A probe holder connects to the second portion and extends towards a second direction opposite to the first direction by a second length. The probe connects to an end of the probe holder away from the second portion and extends towards the second direction by a third length. A product of a thermal coefficient of the adaptor and the first length is equal to a sum of a product of a thermal coefficient of the probe holder and the second length and a product of a thermal coefficient of the probe and the third length.

Abstract: Systems and methods for irradiating a sample with a charged-particle beam are disclosed. The charged-particle beam system may comprise a stage configured to hold a sample and is movable in at least one of X-Y-Z axes. The charged-particle beam system may further comprise a position sensing system to determine a lateral and vertical displacement of the stage, and a beam deflection controller configured to apply a first signal to deflect a primary charged-particle beam incident on the sample to at least partly compensate for the lateral displacement, and to apply a second signal to adjust a focus of the deflected charged-particle beam incident on the sample to at least partly compensate for the vertical displacement of the stage. The first and second signals may comprise an electrical signal having a high bandwidth in a range of 10 kHz to 50 kHz, and 50 kHz to 200 kHz, respectively.

Abstract: A wafer inspection system includes a controller in communication with an electron-beam inspection tool. The controller includes circuitry to: acquire, via an optical imaging tool, coordinates of defects on a sample; set a Field of View (FoV) of the electron-beam inspection tool to a first size to locate a subset of the defects; determine a position of each defect of the subset of the defects based on inspection data generated by the electron-beam inspection tool during a scanning of the sample; adjust the coordinates of the defects based on the determined positions of the subset of the defects; and set the FoV of the electron-beam inspection tool to a second size to locate additional defects based on the adjusted coordinates.

Abstract: A power sourcing equipment is provided. The power sourcing equipment may include an input terminal, an output terminal, a switch, and a device detection circuit. The input terminal may receive a power signal. The output terminal may be electrically coupled to a powered device via a coaxial cable, which transmits the power signal from the power sourcing equipment to the powered device or a data signal from the powered device to the power sourcing equipment. The switch may control an electrical connection between the input and output terminal(s). The device detection circuit may detect whether the data signal is being transmitted from the powered device to the power sourcing equipment. If the data signal is not being transmitted from the powered device to the power sourcing equipment, the device detection circuit may control an operation of the switch based on an electrical parameter associated with the powered device.