Abstract: Provided are compounds of Formula Ir(LA)x(LC)y wherein: ligand LA has Formula I? ?and ligand LC has Formula II?

Abstract: A personalized scene image processing method is provided for a terminal device. The method includes acquiring, according to a touch event triggered in a screen region of the terminal device, a trajectory of the touch event in the screen region; generating a virtual model, according to a projection of the trajectory of the touch event in a space coordinate system; reconstructing a model view of the virtual model mapped within a field of view of the terminal device, according to a position and posture of the terminal device in the space coordinate system; and overlaying a scene image acquired by the terminal device in the position and posture with the model view to obtain a personalized scene image.

Abstract: An embodiment is a package including a package substrate and a package component bonded to the package substrate, the package component including an interposer, an optical die bonded to the interposer, the optical die including an optical coupler, an integrated circuit die bonded to the interposer adjacent the optical die, a lens adapter adhered to the optical die with a first optical glue, a mirror adhered to the lens adapter with a second optical glue, the mirror being aligned with the optical coupler of the optical die, and an optical fiber on the lens adapter, a first end of the optical fiber facing the mirror, the optical fiber being configured such that an optical data path extends from the first end of the optical fiber through the mirror, the second optical glue, the lens adapter, and the first optical glue to the optical coupler of the optical die.

Abstract: A display device is disclosed. The display device includes a display area and a wiring area. The display area is disposed with a first thin film transistor which is an oxide thin film transistor and a second thin film transistor which is a low temperature poly-silicon thin film transistor. A distance between a first active layer of the first thin film transistor and a substrate is different from a distance between a second active layer of the second thin film transistor and the substrate. The first thin film transistor includes first vias that receive a first source/drain. The second thin film transistor includes second vias that receives a second source/drain. The wiring area is provided with a groove. The groove includes a first sub-groove and a second sub-groove that are stacked, and depths of the second vias are substantially equal to a depth of the second sub-groove.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer arranged over a substrate. An interconnect wire extends through the first interconnect dielectric layer, and a barrier structure is arranged directly over the interconnect wire. The integrated chip further includes an etch stop layer arranged over the barrier structure and surrounds outer sidewalls of the barrier structure. A second interconnect dielectric layer is arranged over the etch stop layer, and an interconnect via extends through the second interconnect dielectric layer, the etch stop layer, and the barrier structure to contact the interconnect wire.

Abstract: This application relates to the battery field, and specifically, to a positive electrode plate, an electrochemical apparatus, and an apparatus. The positive electrode plate in this application includes a current collector and an electrode active material layer disposed on at least one surface of the current collector, where the current collector includes a support layer and a conductive layer disposed on at least one surface of the support layer. A single-sided thickness D2 of the conductive layer satisfies 30 nm?D2?3 ?m. A thickness D1 of the support layer satisfies 1 ?m?D1?30 ?m. The support layer is made of a polymer material or a polymer composite material. The electrode active material layer includes electrode active materials, a binder, and a conductive agent.

Abstract: Disclosed is a system and a method for information distribution. The system comprises: a server for generating a group key and its corresponding key deriving parameter, wherein the server encrypts sensitive contents by using the group key to obtain encrypted information; and terminals configured to receive the encrypted information through an open channel, extract the group key, then decrypt the encrypted information by using the group key to obtain the original content. In the group forming process, each terminal encrypts its private identifier using the public key and submits the ciphertext to the server. In information distribution process, the server transmits the ciphertext of sensitive contents and the key deriving parameter to the terminals via open channel Because private information available only to respective group members is required for calculating the group key, this mechanism ensures that the sensitive content can be transmitted securely on the open channel.

Abstract: Embodiments of this application provide for a video super-resolution processing method. The method includes obtaining encoded information of a coding block in a video stream. The method further includes determining an inter-frame prediction mode of the coding block based on an inter-frame prediction marker included in the encoded information. The method further includes determining a super-resolution pixel block of the coding block based on the inter-frame prediction mode of the coding block and pixel information of a matched coding block identified by a matched coding block index included in the encoded information. The method further includes stitching super-resolution pixel blocks of all coding blocks that belong to a same image frame in the video stream to obtain a super-resolution image. Power consumption can be reduced while an effect of super-resolution processing performed on a single frame of image in a video is ensured.

Abstract: A package structure includes a package substrate, a first semiconductor package and a second semiconductor package, an underfill material, a gap filling structure and a heat dissipation structure. The first semiconductor package and the second semiconductor package are electrically bonded to the package substrate. The underfill material is disposed to fill a first space between the first semiconductor package and the package substrate and a second space between the second semiconductor package and the package substrate. The gap filling structure is disposed over the package substrate and in a first gap laterally between the first semiconductor package and the second semiconductor package. The heat dissipation structure is disposed on the package substrate and attached to the first semiconductor package and the second semiconductor package through a thermal conductive layer.

Abstract: A projection apparatus including a light source module, an eccentric-collimating lens, a prism lens group, a light valve and a projection lens is provided. The light source module is configured to provide an illumination light beam. The eccentric-collimating lens is disposed between the light sources and the light valve on a transmission path of the illumination light beam. The light valve is configured to convert the illumination light beam into an image light beam. The projection lens is configured to project the image light beam out of the projection apparatus. A first included angle between a first transmission direction of the illumination light beam incident on the eccentric-collimating lens and a central axis of the eccentric-collimating lens is greater than 0. The first transmission direction and a second transmission direction of the image beam exiting from the light valve are perpendicular to each other.

Abstract: A semiconductor package including one or more dam structures and the method of forming are provided. A semiconductor package may include an interposer, a semiconductor die bonded to a first side of the interposer, an encapsulant on the first side of the interposer encircling the semiconductor die, a substrate bonded to the a second side of the interposer, an underfill between the interposer and the substrate, and one or more of dam structures on the substrate. The one or more dam structures may be disposed adjacent respective corners of the interposer and may be in direct contact with the underfill. The coefficient of thermal expansion of the one or more of dam structures may be smaller than the coefficient of thermal expansion of the underfill.

Abstract: In an embodiment, a device bonding apparatus is provided. The device bonding apparatus includes a first process station configured to receive a wafer; a first bond head configured to carry a die to the wafer, wherein the first bonding head includes a first rigid body and a vacuum channel in the first rigid body for providing an attaching force for carrying the die to the wafer; and a second bond head configured to press the die against the wafer, the second bond head including a second rigid body and an elastic head disposed over the second rigid body for pressing the die, the elastic head having a center portion and an edge portion surrounding the center portion, the center portion of the elastic head having a first thickness, the edge portion of the elastic head having a second thickness, the second thickness being greater than the second thickness.

Abstract: An illumination system including two light source modules, two light guiding modules, a first reflector, and a light homogenization element is provided. The two light guiding modules are respectively disposed on transmission paths of light beams generated by the two light source modules to generate two guiding light beams. One of the guiding light beams is reflected to the light homogenization element by the first reflector. The other of the guiding light beams is directly transmitted to the light homogenization element. The guiding light beams are emitted from the light homogenization element and form an illumination light beam. A projection apparatus is also provided.

Abstract: This disclosure relates to systems for wellbore drilling and methods for preparing wellbore drilling fluid. The system can include a drilling fluid tank that holds wellbore drilling fluid for introduction into a wellbore, an additive distribution component fluidly coupled to the drilling fluid tank that holds a first additive, and a computing device communicatively coupled to the additive distribution component. The methods can include a computing device performing at least the following: receiving drilling parameters that identify wellbore drilling conditions of a wellbore drilling system, calculating a thermochemical sulfate reduction (TSR) proxy value of the wellbore. In response to determining that a predicted hydrogen sulfide concentration meets a predetermined threshold, the computing device can determine a first quantity of a first additive to be added to the wellbore drilling fluid and combine the first quantity of the first additive with the wellbore drilling fluid.

Abstract: Methods and systems for gesture-based control of a device are described. A virtual gesture-space is determined in a received input frame. The virtual gesture-space is associated with a primary user from a ranked user list of users. The received input frame is processed in only the virtual gesture-space, to detect and track a hand. Using a hand bounding box generated by detecting and tracking the hand, gesture classification is performed to determine a gesture input associated with the hand. A command input associated with the determined gesture input is processed. The device may be a smart television, a smart phone, a tablet, etc.

Abstract: Provided are a boron-silicon heterocyclic compound having a structure represented by formula 1, a display device and a display apparatus. In formula 1, L1 and L2 are each a single bond, C6-C30 arylene, C6-C30 fused arylene, C4-C30 heteroarylene, or C4-C30 fused heteroarylene; D1 and D2 are each a substituted or unsubstituted C6-C60 aryl, a substituted or unsubstituted C4-C60 heteroaryl, a substituted or unsubstituted C10-C60 fused aryl, a substituted or unsubstituted C8-C30 fused heteroaryl, or a substituted or unsubstituted diphenylamino. The compound has a strong inductive effect and can reduce the driving voltage of the device. The silacyclopentadiene having a silicon atom as spiro-atom can effectively improve the solubility of the material, which is beneficial to the cleaning of the vapor deposition mask. In addition, the compound has a higher triplet energy level to effectively transfer energy to the luminous body, and improves the efficiency of the device.

Abstract: An electronic expansion valve and a thermal management assembly. The electronic expansion valve has a valve port and a valve core. A valve body includes a first flow portion, a second flow portion, a first cavity and a second cavity. The first flow portion comprises a first connection section and a first subsection, and the first subsection is directly in communication with the first cavity. The second flow portion comprises a second connection section and a second subsection, and the second subsection is directly in communication with the second cavity. In a clockwise direction, an angle formed between at least one of the center line of the first subsection and the center line of the second subsection and the center line of the valve core is an acute angle.

Abstract: The present disclosure discloses a stable and high-capacity neutral aqueous redox flow lithium battery based on redox-targeting reaction and belongs to the technical field of flow lithium batteries. The present disclosure solves the technical problem that an existing flow battery can only work at low current density. The flow lithium battery of the present disclosure includes a positive electrode storage tank and a negative electrode storage tank; the positive electrode storage tank is filled with a positive electrolyte; and the negative electrode storage tank is filled with a negative electrolyte. The flow lithium battery is characterized in that the positive electrolyte includes a salt containing [Fe(CN)6]4? and/or [Fe(CN)6]3?, and the positive electrode storage tank is further filled with LFP particles and/or FP particles. The flow lithium battery of the present disclosure has wide application prospects in the field of large-scale energy storage.

Abstract: Disclosed is use of 5?-androst-3?,5,6?-triol or an analogue, a deuterated compound or a pharmaceutically acceptable salt thereof in the manufacture of a medicament for the treatment of cerebral small vessel disease in a patient. The cerebral small vessel disease is preferably cerebral microbleed. The cerebral microbleed is spontaneous cerebral microbleed, drug-related cerebral microbleed, or traumatic cerebral microbleed. The present invention demonstrates that these compounds significantly enhance the clearance of extravascular hemoglobin, and thus can be used to treat cerebral small vessel disease.

Abstract: The present disclosure relates to an integrated chip including a substrate. A first conductive wire is within a first dielectric layer that is over the substrate. A first etch-stop layer is over the first dielectric layer. A second etch-stop layer is over the first etch-stop layer. A conductive via is within a second dielectric layer that is over the second etch-stop layer. The conductive via extends through the second etch-stop layer and along the first etch-stop layer to the first conductive wire. A first lower surface of the second etch-stop layer is on a top surface of the first etch-stop layer. A second lower surface of the second etch-stop layer is on a top surface of the first conductive wire.