Abstract: A biaxially stretched polyester film and a method for producing the same are provided. The biaxially stretched polyester film includes a polyester resin base layer and a matte layer formed on the polyester resin base layer. The matte layer has a total weight of 100 wt %, and the matte layer includes: (1) 50 to 95 wt % of a polyester resin matrix, an intrinsic viscosity of the polyester resin matrix being between 0.5 and 0.8 dL/g; (2) 0.01 to 5 wt % of a high viscosity polyester resin, an intrinsic viscosity of the high viscosity polyester resin being between 0.9 and 1.1 dL/g; (3) 0.3 to 40 wt % of a plurality of filler particles, the filler particles having an average particle size of between 0.15 and 10 ?m.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

Abstract: The catalyst carrier structure of the present invention includes a central axis, and a plurality of fibers. The surface of each fiber is coated with a catalyst. The fibers are centered on the central axis, and are arranged around the central axis radially outward along the axial direction of the central axis. Each fiber is an independent and separate fiber set on the central axis.

Abstract: There is provided a photographing device having two output interfaces that respectively used to output a first image frame and a second image frame. The first image frame is provided to a processor of the photographing device to perform the feature extraction and tag the second image frame accordingly. The tagged second image frame is for the image recording of an external back end.

Abstract: A 3D display system and a 3D display method are provided. The 3D display system includes a 3D display, a memory and one or more processors. The memory records a plurality of modules, and the processor accesses and executes the modules recorded by the memory. The modules include a bridge interface module and a 3D display service module. When an application is executed by the processor, the bridge interface module creates a virtual extend screen, and moves the application to the virtual extend screen. The bridge interface module obtains a 2D content frame of the application from the virtual extend screen by a screenshot function. The 3D display service module converts the 2D content frame into a 3D format frame by communicating with a third-party software development kit, and provides the 3D format frame to the 3D display for displaying.

Abstract: A quick release and reconnectable structure to allow additional movement beyond the limit of a powered arm providing assistance in the opening of a cover of an enclosure includes a support base, a connector, and a lock. The connector is slidably arranged on the support base and can be separated from the support base. The lock comprises a locking body and a clamping shaft. The locking body is positioned on the support base. The clamping shaft is slidably positioned on the locking body. A holding hole is defined in the connector. The sliding direction of the clamping shaft intersects with the sliding direction of the connector along the support base, and the clamping shaft can be inserted into or withdrawn from the holding hole.

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of semiconductor fins, a gate stack and an epitaxy structure. The semiconductor fins are present on the semiconductor substrate. The semiconductor fins respectively include recesses therein. The gate stack is present on portions of the semiconductor fins that are adjacent to the recesses. The epitaxy structure is present across the recesses of the semiconductor fins. The epitaxy structure includes a plurality of corners and at least one groove present between the corners, and the groove has a curvature radius greater than that of at least one of the corners.

Abstract: In some embodiments, a field effect transistor (FET) structure comprises a body structure, dielectric structures, a gate structure and a source or drain region. The gate structure is formed over the body structure. The source or drain region is embedded in the body structure beside the gate structure, and abuts and is extended beyond the dielectric structure. The source or drain region contains stressor material with a lattice constant different from that of the body structure. The source or drain region comprises a first region formed above a first level at a top of the dielectric structures and a second region that comprises downward tapered side walls formed under the first level and abutting the corresponding dielectric structures.

Abstract: A medical care system for assisting multi-diseases decision-making and real-time information feedback with artificial intelligence technology provided by the invention is capable of obtaining N training models respectively by mathematically operating M different diseases correspondingly based on a batch of collected medical information, obtaining inference results related to at least two diseases by inputting a single patient's data into all or part of the training models to perform mathematical calculation, at the same time, receiving feedback from professionals on the inference results to effectively integrate objective medical data of the patient with subjective medical data of the professionals, and constructing a multi-diseases data model based on the integrated data to be used as a tool for assisting multi-diseases decision-making.

Abstract: A rotary wire-receiving rack includes a winding structure, a shaft, a first handle, a lid, a locking slider, and a second handle. The winding structure includes two bars arranged longitudinally in parallel and two rods arranged horizontally in parallel for winding cables. Both ends of the two rods are linked to the bars respectively. The shaft is arranged parallel to and located between the rods. The shaft is pivoted on the bars. The first handle and the lid are respectively fixed at the two ends of the shaft. The lid has a locking hole, and the locking slider is slidably installed on the shaft near the locking hole. The locking slider is formed with a locking pin that cooperates with the locking hole. The second handle is pivoted at the end of the bar which closing to the locking hole and having a recess for clamping a cable.

Abstract: A fitting for an upper brush in a double brush scrubbing chamber of a wafer cleaning system is disclosed. The fitting includes a base plate, a flanged pipe, and a threaded connector. The base plate includes a threaded hole with a stop surface therein and a channel extending from the stop surface through a lower surface of the base plate. The flanged pipe is inserted into the base plate such that the flange at the top end of a hollow tube rests on the stop surface and the hollow tube passes through the channel of the base plate. The threaded connector has a passage therethrough, and engages the threaded hole of the base plate to fix the flanged pipe in place. This structure is able to provide fluid while minimizing particle generation.

Abstract: A method for forming a MEMS device includes following operations. A first semiconductor layer is formed over a substrate. A plurality of first pillars are formed over the first layer. A second layer is formed over the first pillars and the first layer. A plurality of second pillars are formed over the second layer. A third layer is formed over the second pillars and the second layer.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a first piezoelectric layer, and a first dummy layer. The first piezoelectric layer is over the substrate, and the first piezoelectric layer has a first top surface. The first dummy layer is over the first piezoelectric layer, and the first dummy layer has a second top surface. And an average roughness of the first top surface is greater than an average roughness of the second top surface. A method for manufacturing the semiconductor structure is also provided.

Abstract: A manufacturing method is provided. The method includes steps below. Forming bottom electrodes. Blanketly forming a resistance switching layer on the bottom electrodes. Forming a first insulating material layer on the resistance switching layer. Patterning the first insulating material layer to form insulating patterns. Conformally forming a channel layer having a plurality of channel regions on the resistance switching layer and the insulating patterns, wherein the plurality of channel regions are located on the resistance switching layer and cover opposite sides of the insulating patterns. Forming a second electrode material layer on the channel layer. Patterning the second electrode material layer to form top electrodes, each of the top electrodes is located in corresponding to one of the insulating patterns and covers at least two of the plurality of channel regions.

Abstract: A polyester film and a method for manufacturing the same are provided. The polyester film includes a physically recycled polyester resin and a chemically recycled polyester resin. The physically recycled polyester resin is formed by a plurality of physically recycled polyester chips. The chemically recycled polyester resin is formed by a plurality of chemically recycled polyester chips and mixed with the physically recycled polyester resin. The plurality of chemically recycled polyester chips further includes chemically recycled electrostatic pinning polyester chips. The chemically recycled electrostatic pinning polyester chips contain electrostatic pinning additives, and the electrostatic pinning additives are metal salts. Expressed in percent by weight based on a total weight of the polyester film, a content of the electrostatic pinning additives in the polyester film is between 0.005% and 0.1% by weight.

Abstract: The disclosure provides an augmented reality (AR) system and an operation method thereof. The AR system includes a target device, an AR server, and an AR device. The target device displays a marker. The AR server provides a digital content corresponding to the marker. The AR device captures the target device and the marker to generate a picture. The AR device obtains the digital content from the AR server through a communication network. The AR device tracks the target device in the picture according to the marker for an AR application. During the AR application, the AR device overlays the digital content on the target device in the picture.

Abstract: In an example, a card retainer may include a latch to removably engage with a free end of an expansion card. Further, a card retainer may include a pivot mount to attach the latch to a system board of a computing device. In some examples, the latch is movable about the pivot mount between an open position and a closed position. The latch may exert a bias force on the free end of the expansion card in order to retain the expansion card to the system board in a secure manner when the latch is disposed in the closed position.

Abstract: Structures and functions of power supplies are disclosed. In an example, a power supply includes a power factor correction circuit and a bypass circuit. The bypass circuit bypasses the power factor correction circuit when the switch of the bypass circuit is on in response to a predetermined range of input power of the power supply. The bypass circuit also includes a delay circuit to delay the activation of the bypass circuits in response to the predetermined range of input power of the power supply for a predetermined time period.

Abstract: An infrared shielding film and a method for manufacturing the same are provided. The infrared shielding film includes an infrared absorbing layer and a first infrared reflecting layer disposed on a surface of the infrared absorbing layer. The infrared absorbing layer contains a uniform distribution of composite tungsten oxide particles that are present in an amount of 0.1% to 10% by weight based on the total weight of the infrared absorbing layer. The first infrared reflecting layer contains a uniform distribution of titanium oxide particles that are present in an amount of 0.1% to 10% by weight based on the total weight of the first infrared reflecting layer.