Abstract: A MEMS microphone includes a substrate having an opening, a first diaphragm, a first backplate, a second diaphragm, and a backplate. The first diaphragm faces the opening in the substrate. The first backplate includes multiple accommodating-openings and it is spaced apart from the first diaphragm. The second diaphragm joints the first diaphragm together at multiple locations by pillars passing through the accommodating-openings in the first backplate. The first backplate is located between the first diaphragm and the second diaphragm. The second backplate includes at least one vent hole and it is spaced apart from the second diaphragm. The second diaphragm is located between the first backplate and the second backplate.

Abstract: The present invention provides a method of providing configuration of cell search information for a network device of a non-terrestrial network (NTN). The network device has a serving cell on which a mobile device is allowed to camp. The method includes a step of transmitting at least one location information of reference points for the configuration of cell search information for at least one mobile device, to configure the mobile device to determine whether to perform cell search for cell reselection according to the configuration of cell search information.

Abstract: The present invention relates to a coating process and a process system for a cable, and a cable manufactured thereby. The process includes: (1) providing the cable; (2) transporting the cable into immersion device, the cable immerged in first solution to form first coating layer thereon; (3) transporting the cable out of the immersion; (4) transporting the cable into coating device through third wire die, the cable immerged in second solution to form second coating layer thereon, the second layer is attached to the cable through the first layer; (5) transporting the cable out of the coating device through fourth wire die, fourth aperture diameter of the fourth wire die is larger than third aperture diameter of the third wire die; and (6) heating the cable to cure the second coating layer. The system includes: a cable providing device; an immersion device; a coating device; and a heating device.

Abstract: A harness system is provided and includes an upper buckle, an upper strap and a restraining assembly. The upper strap includes shoulder portion and a waist portion divided by the upper buckle. A through slot is formed on the upper buckle. The restraining assembly includes an anti-sliding structure, a beam structure disposed on the upper buckle and a stopping component. The through slot includes a first portion and a second portion divided by the beam structure and respectively adjacent to the shoulder portion and the waist portion. The upper strap passes through the first portion of the through slot from bottom to top and passes through the second portion of the through slot from top to bottom. The stopping component is detachably disposed on the shoulder portion and configured to abut against the upper buckle for restraining a sliding movement of the upper buckle relative to the upper strap.

Abstract: A stacked semiconductor structure includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth D in the second substrate. A movable structure is disposed over the front surface of the second substrate and suspending over the cavity. The movable structure includes a dielectric membrane, metal units over the dielectric membrane and a cap dielectric layer over the metal units. Second bonding features are over the cap dielectric layer and bonded to the first bonding features. The second bonding features extend through the cap dielectric layer and electrically coupled to the metal units.

Abstract: A screwdriver includes a shank, a ratchet assembly, and a handle. The shank includes a shank extender that in an extended position lengthens the shank and in a retracted position is stored within the handle of the screwdriver. The ratchet assembly includes a knob and is configured to drive in the same direction the knob is turned. The screwdriver includes a locking mechanism to prevent unwanted movement of the shank between the extended and retracted positions. The handle of the screwdriver includes a storage space to hold alternative screwdriver bits and a stabilizing component to decrease movement of the handle when the storage portion is in an extended or open position. In a closed position the handle surrounds the alternate bits and in an open position the alternate bits are exposed.

Abstract: A cabinet for electronic components, which is resistant to shocks resulting in deformation of a housing and unsteady leaning of a cabinet casing, includes a cabinet body, a plurality of supporting units, and a plurality of shock-proof units. The plurality of supporting units is disposed on a bottom portion of the cabinet body, and each of the plurality of shock-proof units includes a shock-proof member and a carrier. An end of the shock-proof member rests on the floor or ground, and the other end is connected to the cabinet body. The carrier is connected to the cabinet body and supports the cabinet body, inclination of the cabinet body following heavy jarring and impacts is prevented.

Abstract: In an embodiment, a system includes: a base; and a rod set comprising multiple rods connected to the base, wherein each rod of the rod set comprises multiple fingers disposed in a vertically-stacked relationship to each other and separated respectively from each other by respective slots, wherein each slot is configured to receive a bevel of a wafer, and wherein each of the multiple fingers comprises a rounded end at a furthest extension.

Abstract: The photoelectric signal conversion and transmission device includes a photoelectric signal module and a fiber joint, matched and coupled together. A circuit board of the photoelectric signal module includes one or more connection bases. Light emission elements, light reception elements, and amplifiers are configured on a first coupling face of the connection based, and electrically connected by first and second wires. The fiber joint includes a number of fibers axially aligned with the light emission and reception elements. By having the light emission and reception elements and amplifiers configured on a same coupling face, their physical connection distance is reduced, thereby decreasing signal attenuation, enhancing signal transmission performance, and facilitating structural miniaturization.

Abstract: An electronic device is provided. The electronic device includes a frame, a backlight module, a working panel, and a spacer. The backlight module is disposed in the frame. The working panel is disposed on the frame. The spacer is disposed between the frame and the working panel. At least a portion of the working panel and at least a portion of the spacer are in direct contact with an adhesive.

Abstract: The present invention relates to a method for removing water from a compound solution and performing conjugate acid conversion. The method uses a nanometer film to perform reverse osmosis for the compound solution to remove water, and provides a conjugate acid to replace the acidic substances in the compound solution in order to obtain compound conjugate acid salts. The method of the present invention can effectively reduce the water content of the compound solution and replace the conjugate acid of the compound to form the desired compound conjugate acid salt.

Abstract: In a method for manufacturing a semiconductor device, a fin structure is formed over a substrate, an isolation insulating layer is formed over the substrate such that an upper portion of the fin structure protrudes from the isolation insulating layer, a first dielectric layer is formed on the upper portion of the fin structure, a cover layer is formed on the first dielectric layer, the cover layer is partially removed from an upper part of the upper portion of the fin structure with the first dielectric layer, the first dielectric layer is removed from the upper part of the upper portion of the fin structure, a second dielectric layer is formed on the upper part of the upper portion of the fin structure, and a gate electrode is formed on the second dielectric layer and the first dielectric layer disposed on an lower part of the upper portion of the fin structure.

Abstract: Disclosed is a vacuum chuck and a method for securing a warped semiconductor substrate during a semiconductor manufacturing process so as to improve its flatness during a semiconductor manufacturing process. For example, a semiconductor manufacturing system includes: a vacuum chuck configured to hold a substrate, wherein the vacuum chuck comprises, a plurality of vacuum grooves located on a top surface of the vacuum chuck, wherein the top surface is configured to face the substrate; and a plurality of flexible seal rings disposed on the vacuum chuck and extending outwardly from the top surface, wherein the plurality of flexible seal rings are configured to directly contact a bottom surface of the substrate and in adjacent to the plurality of vacuum grooves so as to form a vacuum seal between the substrate and the vacuum chuck, and wherein each of the plurality of flexible seal rings has a zigzag cross section.

Abstract: A method for manufacturing a MEMS structure is provided. The method includes providing a MEMS substrate having a first surface, forming a first buffer layer on the first surface of the MEMS substrate, and forming a first roughening layer on the first buffer layer. Also, a MEMS structure is provided. The MEMS structure includes a MEMS substrate, a first buffer layer, a first roughening layer, and a CMOS substrate. The MEMS substrate has a first surface and a pillar is on the first surface. The first buffer layer is on the first surface. The first roughening layer is on the first buffer layer. The CMOS substrate has a second surface and is bonded to the MEMS substrate via the pillar. Moreover, an air gap is between the first roughening layer and the second surface of the CMOS substrate.

Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.

Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate; and a membrane over the substrate and configured to generate charges in response to an acoustic wave, the membrane being in a polygonal shape including vertices. The membrane includes a via pattern having first lines that partition the membrane into slices and extend to the vertices of the membrane such that the slices are separated from each other near an anchored region of the membrane and connected to each other around a central region. The via pattern further includes second lines extending from the anchored region of the membrane toward the central region of the membrane. Each of the second lines includes a length less than a length of each of the first lines.

Abstract: A resistive random access memory (RRAM) device and a manufacturing method are provided. The RRAM device includes bottom electrodes, a resistance switching layer, insulating patterns, a channel layer and top electrodes. The resistance switching layer blanketly covers the bottom electrodes. The insulating patterns are disposed on the resistance layer and located in corresponding to locations of the bottom electrodes. The channel layer conformally covers the resistance switching layer and the insulating patterns. The channel layer has a plurality of channel regions. The channel regions are located on the resistance switching layer, and cover sidewalls of the insulating patterns. The top electrodes respectively cover at least two of the channel regions, and respectively located in corresponding to one of the insulating patterns, such that the at least two of the channel regions are located between one of the bottom electrodes and one of the top electrodes.

Abstract: An electronic apparatus and a data transmission method thereof are provided. The data transmission method is adapted to the electronic apparatus including a touch screen, and the data transmission method includes the following steps. An image frame is displayed through the touch screen. A connection with another electronic apparatus placed on the touch screen is established. Position information of said another electronic apparatus on the touch screen is detected through the touch screen, to capture a partial frame from the image frame according to the position information of said another electronic apparatus. Feature information of data to be transmitted is obtained from the partial frame. The data to be transmitted is sent to said another electronic apparatus via the connection according to the feature information.

Abstract: A stacked semiconductor structure includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth D in the second substrate. A movable structure is disposed over the front surface of the second substrate and suspending over the cavity. The movable structure includes a dielectric membrane, metal units over the dielectric membrane and a cap dielectric layer over the metal units. Second bonding features are over the cap dielectric layer and bonded to the first bonding features. The second bonding features extend through the cap dielectric layer and electrically coupled to the metal units.

Abstract: An apparatus and method for physical vapor deposition includes a magnetron having a plurality of electromagnets disposed between a base and a magnetic conductive plate. The magnetron includes a plurality of individually controlled electromagnets between a base and an electromagnetic plate. The magnetron controls the polarity and strength of current supplied to the respective electromagnets to generate magnetic fields that confine electrons to areas near a target material within the deposition chamber.