Abstract: A biaxially stretched polyester film and a method for producing the same are provided. The biaxially stretched polyester film includes a polyester resin base layer and a matte layer formed on the polyester resin base layer. The matte layer has a total weight of 100 wt %, and the matte layer includes: (1) 50 to 95 wt % of a polyester resin matrix, an intrinsic viscosity of the polyester resin matrix being between 0.5 and 0.8 dL/g; (2) 0.01 to 5 wt % of a high viscosity polyester resin, an intrinsic viscosity of the high viscosity polyester resin being between 0.9 and 1.1 dL/g; (3) 0.3 to 40 wt % of a plurality of filler particles, the filler particles having an average particle size of between 0.15 and 10 ?m.

Abstract: Various embodiments of the present application are directed towards a semiconductor packaging device including a shield structure configured to block magnetic and/or electric fields from a first electronic component and a second electronic component. The first and second electronic components may, for example, be inductors or some other suitable electronic components. In some embodiments, a first IC chip overlies a second IC chip. The first IC chip includes a first substrate and a first interconnect structure overlying the first substrate. The second IC chip includes a second substrate and a second interconnect structure overlying the second substrate. The first and second electronic components are respectively in the first and second interconnect structures. The shield structure is directly between the first and second electronic components.

Abstract: An electronic apparatus and a method for recognizing view angle of displayed screen thereof. The method is adapted to the electronic apparatus and includes the following steps. A first person view screen displayed by a display is captured. A specific object in the first person view screen is removed to generate a preprocessed image. The preprocessed image is inputted into a neural network model to recognize a view angle of the first person view screen. A function is performed according to the view angle of the first person view screen.

Abstract: A polyester film and a method for manufacturing the polyester film are provided. The method for manufacturing a polyester film by using a recycled plastic material includes the following steps. A part of the recycled plastic material is physically reproduced to obtain a physically regenerated polyester resin. Another part of the recycled plastic material is chemically reproduced to obtain a chemically regenerated polyester resin. A polyester composition including the physically regenerated polyester resin and the chemically regenerated polyester resin is prepared. Based on a total weight of the polyester composition being 100 wt %, a weight of the chemically regenerated polyester resin is larger than or equal to 5 wt %. The polyester film is manufactured by using the polyester composition. Based on a total weight of the polyester film being 100 wt %, a total amount of the physically regenerated polyester resin and the chemically regenerated polyester resin is from 10 wt % to 100 wt %.

Abstract: Various embodiments of the present disclosure are directed towards a microphone including a particle filter disposed between a microelectromechanical systems (MEMS) substrate and a carrier substrate. A MEMS device structure overlies the MEMS substrate. The MEMS device structure includes a diaphragm having opposing sidewalls that define a diaphragm opening. The carrier substrate underlies the MEMS substrate. The carrier substrate has opposing sidewalls that define a carrier substrate opening underlying the diaphragm opening. A filter stack is sandwiched between the carrier substrate and the MEMS substrate. The filter stack includes an upper dielectric layer, a lower dielectric layer, and a particle filter layer disposed between the upper and lower dielectric layers. The particle filter layer includes the particle filter spaced laterally between the opposing sidewalls of the carrier substrate.

Abstract: Various embodiments of the present disclosure are directed towards a microphone including a support structure layer disposed between a particle filter and a microelectromechanical systems (MEMS) structure. A carrier substrate is disposed below the particle filter and has opposing sidewalls that define a carrier substrate opening. The MEMS structure overlies the carrier substrate and includes a diaphragm having opposing sidewalls that define a diaphragm opening overlying the carrier substrate opening. The particle filter is disposed between the carrier substrate and the MEMS structure. A plurality of filter openings extend through the particle filter. The support structure layer includes a support structure having one or more segments spaced laterally between the opposing sidewalls of the carrier substrate. The one or more segments of the support structure are spaced laterally between the plurality of filter openings.

Abstract: A method for forming a fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a substrate and a first fin structure and a second fin structure extending above the substrate. The FinFET device structure also includes a first transistor formed on the first fin structure and a second transistor formed on the second fin structure. The FinFET device structure further includes an inter-layer dielectric (ILD) structure formed in an end-to-end gap between the first transistor and the second transistor, and the end-to-end gap has a width in a range from about 20 nm to about 40 nm.

Abstract: In one example, a device housing is described, which may include a base substrate and ion-exchanged glass beads disposed on an outer surface of the base substrate.

Abstract: A semiconductor structure and a method of fabricating the semiconductor structure are provided. The semiconductor structure includes a substrate; a metal gate structure on the substrate; and a spacer next to the metal gate structure having a skirting part extending into the metal gate structure and contacting the substrate. The metal gate structure includes a high-k dielectric layer and a metal gate electrode on the high-k dielectric layer.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate electrode over the semiconductor substrate. The semiconductor device structure also includes a source/drain structure adjacent to the gate electrode. The semiconductor device structure further includes a spacer element over a sidewall of the gate electrode, and the spacer element has an upper portion having a first exterior surface and a lower portion having a second exterior surface. Lateral distances between the first exterior surface and the sidewall of the gate electrode are substantially the same. Lateral distances between the second exterior surface and the sidewall of the gate electrode increase along a direction from a top of the lower portion towards the semiconductor substrate.

Abstract: In some embodiments, a field effect transistor (FET) structure comprises a body structure, dielectric structures, a gate structure and a source or drain region. The gate structure is formed over the body structure. The source or drain region is embedded in the body structure beside the gate structure, and abuts and is extended beyond the dielectric structure. The source or drain region contains stressor material with a lattice constant different from that of the body structure. The source or drain region comprises a first region formed above a first level at a top of the dielectric structures and a second region that comprises downward tapered side walls formed under the first level and abutting the corresponding dielectric structures.

Abstract: A multi-shield plate includes a plate having a substantially flat upper surface and a substantially flat lower surface, a plurality of first windows formed in the plate and extending through the plate from the upper surface to the lower surface, and a plurality of vapor shields mounted to the plate, each vapor shield of the plurality of vapor shields configured to prevent passage of a vapor through a corresponding window of the plurality of windows. The multi-shield plate includes an aperture formed in the plate, the aperture aligned with a first window of the plurality of windows along an axis corresponding to the upper surface.

Abstract: A semiconductor device includes a fin-like structure extending along a first axis; a first source/drain feature disposed at a first end portion of the fin-like structure; and a constraint layer disposed at a first side of the first end portion of the fin-like structure, wherein the first source/drain feature comprises a first portion, disposed at the first side, the first portion comprising a shorter extended width along a second axis, and a second portion, disposed at a second side that is opposite to the first side, the second portion comprising a longer extended width along the second axis.

Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.

Abstract: The present invention provides a method for synthesizing etelcalcetide or salts thereof, comprising the steps of: (a) synthesizing the D-amino acids in the formula (I) sequentially by Fmoc solid-phase synthesis, using a solid support as a starting material in solid phase peptide synthesis and sequentially synthesizing a D-form amino acid of formula (I) by Fmoc chemistry; deprotecting Fmoc group and acetylating the amino group to obtain a sequence A comprising protecting groups (PG) in the side chain of D-Cys and D-Arg; (b) removing the protecting group in the side-chain of D-Cys of the sequence A to form a sequence B; (c) disulfide formation at D-Cys of the sequence B by (PG)-L-Cys-OH to obtain a sequence C; (d) using a cleavage solution to remove the protecting groups of the sequence C to give etelcalcetide as formula (I). The present invention can shorten the steps and time for preparing Etelcalcetide.

Abstract: An example electronic device includes a first housing including, a first display, a first antenna, a second antenna, and a first rotational motion sensor. The electronic device also includes a hinge including a bend sensor. The electronic device further includes a second housing rotatable coupled to the first housing via the hinge. The second housing includes a second display, a third antenna, a fourth antenna, and a second rotational motion sensor. The electronic device further includes a communication device to select two of the first antenna, the second antenna, the third antenna, and the fourth antenna based on the first rotational motion sensor, the second rotational motion sensor, and the bend sensor. The communication device is also to transmit and receive data via each of the two selected antennas.

Abstract: An angle of view calibration method, a virtual reality display system and a computing apparatus are provided. Whether a Head-Mounted-Display (HMD) is worn on the head of a user is detected by a wearing sensor. A current video frame displayed by the HMD is captured in response to the HMD being worn on the head of the user, wherein the current video frame is generated based on an orientation position parameter of the HMD. A frame elevation angle of the current video frame is determined. The orientation position parameter of the HMD is calibrated according to the frame elevation angle, such that the HMD displays a next video frame generated based on the calibrated orientation position parameter.

Abstract: An electronic device is provided. The electronic device includes a first metal mesh layer, a second metal mesh layer and an insulator. The first metal mesh layer is made up of a plurality of first electrode pattern units. The second metal mesh layer is disposed on one side of the first metal mesh layer, and is made up of a plurality of second electrode pattern units and a plurality of third electrode pattern units. The pattern of the second electrode pattern units and the pattern of the first electrode pattern units are at least partially identical in shape. The insulator is at least partially disposed between the first metal mesh layer and the second metal mesh layer. On a virtual projection surface parallel to the first metal mesh layer, a first vertical projection range projected from the shape of a first electrode pattern units distribution area and a second vertical projection range projected from the shape of a second electrode pattern units distribution area are staggered.

Abstract: In example implementations, an antenna for a mobile device is provided. The antenna includes a printed circuit board and a plurality of metal members coupled to the printed circuit board. The printed circuit board is devoid of metal traces. The plurality of metal members is positioned along a length of the printed circuit board to operate at a desired frequency band when inserted into an opening along an outer edge perimeter of a metallic housing of the mobile device.

Abstract: Examples of an integrated slot antenna are described. The integrated slot antenna comprises a first slot, a second slot and a separating member. The first slot is an open-ended slot and is coupled to a first antenna member to form a first slot antenna. The first slot antenna operates in a first predetermined range of frequencies. The second slot is a close-ended slot and is separated from the first slot by the separating member.