Patents by Inventor Wen Cheng

Wen Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RESISTIVE RANDOM ACCESS MEMORIES AND METHOD FOR FABRICATING THE SAME
    Publication number: 20210013408
    Abstract: A resistive random access memory is provided. The resistive random access memory includes a bottom electrode, a metal oxide layer including a plurality of conductive filament regions formed on the bottom electrode, and a plurality of top electrodes formed on the metal oxide layer, corresponding to the respective conductive filament regions. Each of the conductive filament regions has a bottom portion and a top portion. The width of the bottom portion is greater than that of the top portion. The conductive filament regions include oxygen vacancies, and regions other than the conductive filament regions in the metal oxide layer are nitrogen-containing regions.
    Type: Application
    Filed: July 7, 2020
    Publication date: January 14, 2021
    Inventors: Chang-Tsung PAI, Ming-Che LIN, Chi-Ching LIU, He-Hsuan CHAO, Chia-Wen CHENG
  • Structure and Method for Integrated Microphone
    Publication number: 20200413210
    Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.
    Type: Application
    Filed: September 14, 2020
    Publication date: December 31, 2020
    Inventors: Jung-Huei Peng, Chia-Hua Chu, Chun-Wen Cheng, Chin-Yi Cho, Li-Min Hung, Yao-Te Huang
  • Detection and treatment of LRP4-associated neurotransmission disorders
    Patent number: 10877047
    Abstract: The present invention includes methods for the detection of neurotransmission or developmental disorders, including, but not limited to, myasthenia gravis that is seronegative for autoantibodies to the acetylcholine receptor (AChR) and/or muscle specific tyrosine kinase (MuSK), the method including detecting autoantibodies that bind to LRP4, or an epitope thereof. Also included are methods for the treatment of an individual suffering from a neurotransmission disorder, the method including detecting in a bodily fluid of the individual autoantibodies that bind to LRP4, or an epitope thereof, and administering to the patient an effective amount an immunosuppressant and/or another appropriate therapeutic modality. Also included are antibodies that bind to autoantibodies to LRP4 and kits for the detection of neurotransmission or developmental disorders.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: December 29, 2020
    Assignee: AUGUSTA UNIVERSITY RESEARCH INSTITUTE, INC.
    Inventors: Lin Mei, Wen-Cheng Xiong, Bin Zhang, Chengyong Shen
  • Method of manufacturing semiconductor device comprising doped gate spacer
    Patent number: 10879399
    Abstract: A semiconductor device includes a substrate, at least one source drain feature, a gate structure, and at least one gate spacer. The source/drain feature is present at least partially in the substrate. The gate structure is present on the substrate. The gate spacer is present on at least one sidewall of the gate structure. At least a bottom portion of the gate spacer has a plurality of dopants therein.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Wei-Yang Lo, Tung-Wen Cheng, Chia-Ling Chan, Mu-Tsang Lin
  • Display device
    Patent number: 10871687
    Abstract: The present invention provides a display device, including a first display panel, a second display panel, and a plurality of first lenses. The first display panel has a light emitting surface and includes a plurality of first sub-pixels. Each of the first sub-pixels has a first sub-pixel width. The second display panel is located at one side of the light emitting surface of the first display panel and includes a plurality of second sub-pixels. Each of the second sub-pixels has a second sub-pixel width. The first lenses are disposed between the first display panel and the second display panel. Each of the first lenses has a first diameter, and the first diameter is smaller than the second sub-pixel width.
    Type: Grant
    Filed: August 1, 2019
    Date of Patent: December 22, 2020
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Hui Chu-Ke, Sheng-Wen Cheng
  • Radio frequency matching device of tire pressure sensor
    Patent number: 10873131
    Abstract: The invention discloses a radio frequency (RF) matching device for a tire pressure sensor, which includes a system control unit, a RF control unit, a RF matching unit, and a multi-frequency antenna in order, wherein the RF matching unit includes a resonance portion, a filtering portion, and a matching portion in order, wherein the resonance unit is connected to the RF control unit to be adjusted to the required initial frequency and cut-off frequency of various frequency bands; the filter unit is connected between the resonance unit and the matching unit to suppress and eliminate noise and unwanted frequency-doubling signals; the matching unit allows the maximum power of the multi-frequency RF signal to be transferred to the multi-frequency antenna, so that the multi-frequency antenna can transmit multiple RF signals of different frequencies.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: December 22, 2020
    Assignee: SYSGRATION LTD.
    Inventor: Chia-Wen Cheng
  • ULTRASONIC SENSING DEVICE AND THE MANUFACTURING METHOD THEREOF
    Publication number: 20200395529
    Abstract: An ultrasonic sensing device includes a housing, a piezoelectric assembly, a board and a plurality of fixing members. The housing includes a bottom wall, a top wall and a surrounding side wall connected between the top wall and the bottom wall. The piezoelectric assembly includes an encapsulating body and a piezoelectric sheet, wherein at least a portion of the piezoelectric sheet is enclosed by the encapsulating body and has a sensing surface exposed to the encapsulating body and facing the bottom wall. The board is disposed on the top wall of the housing and has a pressing surface facing the encapsulating body and the top wall. The plurality of fixing members is configured to fix the board to the top wall of the housing to press the board to the encapsulating body of the piezoelectric assembly, thereby pressing the sensing surface of the piezoelectric sheet to the bottom wall.
    Type: Application
    Filed: February 20, 2020
    Publication date: December 17, 2020
    Inventors: Chi-Shen Lee, Yu-Yen Fu, Po-Chun Yeh, Dong-Fu Chen, Chih-Wen Cheng, Chi-Lin Huang, Yu-Ping Yen
  • Method of radio bearer transmission in dual connectivity
    Patent number: 10869344
    Abstract: A method of radio bearer transmission in dual connectivity for a network in a long term evolution (LTE) system is disclosed. The method comprises generating at least a packet data convergence protocol protocol data unit (PDCP PDU) by a PDCP entity of the network corresponding to a radio bearer (RB), and assigning each PDCP PDU with an identity, wherein the identity indicates which PDCP entity the PDCP PDU belongs to.
    Type: Grant
    Filed: March 17, 2016
    Date of Patent: December 15, 2020
    Assignee: ACER INCORPORATED
    Inventors: Hung-Chen Chen, Ching-Wen Cheng
  • MEMS device and method for forming the same
    Patent number: 10865099
    Abstract: A MEMS device includes a first layer and a second layer including a same material, a third layer disposed between the first layer and the second layer, a first air gap separating the first layer and the third layer, a second air gap separating the second layer and the third layer, a plurality of first pillars exposed to the first air gap and arranged in contact with the first layer and the third layer, a plurality of second pillars exposed to the second air gap and arranged in contact with the second layer and the third layer.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chen Hsiung Yang, Chun-Wen Cheng, Chia-Hua Chu, En-Chan Chen
  • Ion through-substrate via
    Patent number: 10867891
    Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a first through substrate via (TSV) within a first semiconductor substrate. The first semiconductor substrate has a front-side surface and a back-side surface respectively on opposite sides of the first semiconductor substrate. The first semiconductor substrate includes a first doped channel region extending from the front-side surface to the back-side surface. The first through substrate via (TSV) is defined at least by the first doped channel region. A first interconnect structure on the front-side surface of the first semiconductor substrate. The first interconnect structure includes a plurality of first conductive wires and a plurality of first conductive vias, and the first conductive wires and the first conductive vias define a conductive path to the first TSV.
    Type: Grant
    Filed: April 23, 2019
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Yang Shen, Chien-Hsien Tseng, Dun-Nian Yaung, Nai-Wen Cheng, Pao-Tung Chen
  • FinFETs and methods of forming finFETs
    Patent number: 10868005
    Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a first portion of the isolation region being between the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a gate seal spacer on sidewalls of the gate structure, a first portion of the gate seal spacer being on the first portion of the isolation region between the first fin and the second fin, and a source/drain region on the first fin and the second fin adjacent the gate structure.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tung-Wen Cheng, Chih-Shan Chen, Wei-Yang Lo
  • PHOTOGRAPHING DEVICE OUTPUTTING TAGGED IMAGE FRAMES
    Publication number: 20200389619
    Abstract: There is provided a photographing device having two output interfaces that respectively used to output a first image frame and a second image frame. The first image frame is provided to a processor of the photographing device to perform the feature extraction and tag the second image frame accordingly. The tagged second image frame is for the image recording of an external back end.
    Type: Application
    Filed: July 9, 2020
    Publication date: December 10, 2020
    Inventors: CHIH-HUAN WU, WEN-CHENG YEN
  • Semiconductor Device and Method
    Publication number: 20200373154
    Abstract: A four-layer photoresist and method of forming the same are disclosed. In an embodiment, a method includes forming a semiconductor fin; depositing a target layer on the semiconductor fin; depositing a BARC layer on the target layer; depositing a first mask layer over the BARC layer, the first mask layer being deposited using a plasma process with an RF power of less than 50 W; depositing a second mask layer over the first mask layer using a plasma process with an RF power of less than 500 W; depositing a photoresist layer over the second mask layer; patterning the photoresist layer, the second mask layer, the first mask layer, and the BARC layer to form a first mask; and selectively removing the target layer from a first portion of the semiconductor fin using the first mask, the target layer remaining on a second portion of the semiconductor fin.
    Type: Application
    Filed: August 3, 2020
    Publication date: November 26, 2020
    Inventors: Dong-Sheng Li, Chia-Hui Lin, Kai Hung Cheng, Yao-Hsu Sun, Wen-Cheng Wu, Bo-Cyuan Lu, Sung-En Lin, Tai-Chun Huang
  • Biosensor calibration system and related method
    Patent number: 10845450
    Abstract: A device includes a first biosensor of a biosensor array; a second biosensor of a biosensor array; a readout circuit electrically connected to the biosensor array; a decoder electrically connected to the biosensor array; a voltage generator electrically connected to the biosensor array; and a decision system electrically connected to the voltage generator and the readout circuit.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: November 24, 2020
    Inventors: Chin-Hua Wen, Jui-Cheng Huang, Yi-Shao Liu, Chun-Wen Cheng, Tung-Tsun Chen
  • SEMICONDUCTOR STRUCTURE FOR MEMS DEVICE
    Publication number: 20200361767
    Abstract: The present disclosure relates to a method of forming an integrated chip structure. The method includes forming a plurality of interconnect layers within a dielectric structure over a substrate. A dielectric layer arranged along a top of the dielectric structure is patterned to define a via hole exposing an uppermost one of the plurality of interconnect layers. An extension via is formed within the via hole and one or more conductive materials are formed over the dielectric layer and the extension via. The one or more conductive materials are patterned to define a sensing electrode over and electrically coupled to the extension via. A microelectromechanical systems (MEMS) substrate is bonded to the substrate. The MEMs substrate is vertically separated from the sensing electrode.
    Type: Application
    Filed: July 31, 2020
    Publication date: November 19, 2020
    Inventors: Yu-Chia Liu, Chia-Hua Chu, Chun-Wen Cheng, Jung-Huei Peng
  • ELECTRIC DEVICE AND HOUSING STRUCTURE THEREOF
    Publication number: 20200367371
    Abstract: The application discloses an electronic device including a motherboard and a housing structure. The motherboard has a first surface and a second surface. The housing structure includes a first casing, a first cushion, a second casing, and a second cushion. The first casing has at least one first fixing member. The first cushion covers the first surface, is accommodated in the first casing and has at least one first through hole. The second casing has at least one second fixing member. The second cushion covers the second surface, is accommodated in the second casing and has at least one second through hole. A peripheral edge of the first cushion is attached to a peripheral edge of the second cushion, and the first fixing member may be fixed to the second fixing member through the first through hole and the second through hole.
    Type: Application
    Filed: April 6, 2020
    Publication date: November 19, 2020
    Inventors: Kuan-Ting LIN, Wen-Cheng TSAI, Jr-Hung HUANG, Danny SUN, Ho-Ching HUANG, Nien-Yu CHANG, Ming-Ke CHOU
  • Repeater
    Patent number: 10840997
    Abstract: A repeater includes a donor device, a service device, a control board circuit and a processing circuit. The repeater provides beam selection mechanisms applicable to several scenarios for base stations and CPE, in which an adaptive gain control mechanism can be utilized to reduce oscillations in a down-link circuit and an up-link circuit of the control board circuit.
    Type: Grant
    Filed: August 2, 2019
    Date of Patent: November 17, 2020
    Assignee: WISTRON NEWEB CORPORATION
    Inventors: Chieh-Wen Cheng, Horen Chen, Tsun-Che Huang, Shoou-Hann Huang
  • Fin field effect transistor (FinFET) device and method for forming the same
    Patent number: 10840378
    Abstract: A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure are provided. The FinFET structure includes a substrate and an isolation structure formed on the substrate. The FinFET structure also includes a fin structure extending above the substrate, and the fin structure is embedded in the isolation structure. The FinFET structure further includes an epitaxial structure formed on the fin structure, the epitaxial structure has a pentagon-like shape, and an interface between the epitaxial structure and the fin structure is lower than a top surface of the isolation structure.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: November 17, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Zhe-Hao Zhang, Tung-Wen Cheng, Chang-Yin Chen, Che-Cheng Chang, Yung-Jung Chang
  • ELECTRONIC DEVICE
    Publication number: 20200356141
    Abstract: An electronic device including a first body, a supporting member, a second body, and an input assembly is provided. The first body is provided with a front end and a rear end opposite to each other. One terminal end of the supporting member is pivotally connected to the rear end of the first body. The second body is pivotally connected to the other terminal end of the supporting member. The input assembly is rotatably connected to the second body and is suitable for being carried by the first body. When a lower edge of the second body is located at the front end of the first body, the input assembly protrudes out from the front end of the first body.
    Type: Application
    Filed: May 7, 2020
    Publication date: November 12, 2020
    Applicant: COMPAL ELECTRONICS, INC.
    Inventors: Yan-Yu Chen, Wang-Hung Yeh, Yu-Wen Cheng, Chun-Wen Wang
  • MANUFACTURING METHOD FOR A CHILD CARRYING DEVICE
    Publication number: 20200353851
    Abstract: A manufacturing method for a child carrying device includes the following steps: providing a mold and disposing a main body of the child carrying device into the mold, and injecting a foam material into a cavity of the mold and foaming the foam material so as to form a flexible layer integrated with the main body. The manufacturing method disposes the main body into the mold and directly forms a flexible layer on the main body, so that the flexible layer ensures safety and comfort of the child carrying device while saves the necessity to dispose a seat pad or a cushion and fixing structures on the main body, and thereby reduces the cost and the work-hour of assembly, and the overall weight of the child carrying device can be reduced by omitting the fixing structures.
    Type: Application
    Filed: July 29, 2020
    Publication date: November 12, 2020
    Inventors: Fengxiang Yan, Kai-Wen Cheng