Abstract: A structure and a process for a microelectromechanical system (MEMS)-based sensor are provided. The structure for a MEMS-based sensor includes a substrate chip. A first insulating layer covers a top surface of the substrate chip. A device layer is disposed on a top surface of the first insulating layer. The device layer includes a periphery region and a sensor component region. The periphery region and a sensor component region have an air trench therebetween. The component region includes an anchor component and a moveable component. A second insulating layer is disposed on a top surface of the device layer, bridging the periphery region and a portion of the anchor component. A conductive pattern is disposed on the second insulating layer, electrically connecting to the anchor component.

Abstract: An ultrasound imaging breast tumor detection and diagnostic system and method is disclosed. The method uses the system to acquire a plurality of 3D breast ultrasound images, and then to cut out multiple regions from the 3D breast ultrasound images using a 3D means shift algorithm, and then to acquire the mean grayscale value (MGV) of each region, and then to classify the regions to groups subject to the mean grayscale value (MGV), and to merge each of the regions of the darkest group with adjacent regions of the similar grayscale into a respective suspicious tumor tissue full region, and then to recognize each suspicious tumor tissue full region to be a tumor tissue region or non-tumor tissue region. Thus, using region as the basic computing unit, tumor tissues are quickly recognized from the 3D breast ultrasound images.

Abstract: A display device includes a base seat unit and at least one first display unit. The first display unit includes a first casing module, a first display panel connected to the first casing module, a pair of first support rods, and a pair of second support rods. The first support rods are connectible to the base seat unit in an upright direction and in a horizontally spaced apart manner, and are used to support therebetween the first casing module in a horizontal state. The second support rods are longer than the first support rods, are connectible to the base seat unit in an upright direction and in a horizontally spaced apart manner, and are used to support therebetween the first casing module in a vertical state.

Abstract: The present invention discloses a circuit sharing time delay integrator structure. The major composing elements of this circuit sharing time delay integrator structure are: a sharing circuit, a first control block, a plurality of second control blocks and a timing set generated by a timing generator circuit. The sharing circuit can be an OP-AMP, an active load, or any of a variety of combinations used in signal accumulation applications. With the implementation of the present invention to applications of signal accumulations, the necessity of an adder circuitry is eliminated, the overall circuitry and hence the total amount of transistors required when producing the integrated circuit is massively reduced, and thus a great cost reduction and better timing and power efficiency can all be thereof achieved.

Abstract: In one embodiment, an organic-inorganic metal oxide hybrid resin having the following formula: wherein each R1 is independently a substituted or non-substituted C1 to C10 alkyl group; each R2 is independently a substituted or non-substituted C1 to C10 alkyl group or benzyl group; n is a positive integer from 3 to 30; and each Y is independently (MO4/2)l[(MO)(4-a)/2M(OH)a/2]m[MO(4-b)/2M(OZ)b/2]p, wherein M is a metal; l is a positive integer from 10 to 90; m is a positive integer from 2 to 20; p is a positive integer from 4 to 15; a is a positive integer from 1 to 2; b is a positive integer from 1 to 2; and Z is an organosilane group.

Abstract: The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a substrate having a front surface and a back surface; a plurality of sensor elements disposed at the front surface of the substrate, each of the plurality of sensor elements being operable to sense radiation projected towards the back surface of the substrate; a radiation-shielding feature disposed over the back surface of the substrate and horizontally disposed between each of the plurality of sensor elements; a dielectric feature disposed between the back surface of the substrate and the radiation-shielding feature; and a metal layer disposed along sidewalls of the dielectric feature.

Abstract: A method of manufacturing a trench power semiconductor structure is provided. The method comprising the steps of: providing a base, forming a dielectric pattern layer on the base to define an active region and a terminal region, wherein a portion of the base in the active region and the terminal region is covered by the dielectric pattern layer; selectively forming a first epitaxial layer on the base without being covered by the dielectric pattern layer; removing the dielectric pattern layer in the active region to form a gate trench on the base, and forming a gate dielectric layer on the first epitaxial layer and on the inner surface of the gate trench; forming the gate structure in the gate trench; utilizing the dielectric pattern layer to forming a body on or in the first epitaxial layer; and forming a source on the upper portion of the body.

Abstract: An image capturing optical lens assembly includes, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element has positive refractive power. The second lens element has positive refractive power. The third lens element has negative refractive power. The fourth lens element has positive refractive power. The fifth lens element with negative refractive power is made of plastic material, and has an image-side surface being concave at a paraxial region and being convex at a peripheral region, wherein at least one of an object-side surface and the image-side surface of the fifth lens element is aspheric.

Abstract: An image lens system includes, in order from an object side to an image side, a first lens element with negative refractive power including a concave image-side surface; a second lens element with positive refractive power including a convex object-side surface; a third lens element with negative refractive power including an object-side surface and a concave image-side surface, the object-side surface and the image-side surface being aspheric; a fourth lens element with positive refractive power including a convex object-side surface and a convex image-side surface; and a fifth lens element with negative refractive power including a convex object-side surface and a concave image-side surface, the object-side surface and the image-side surface being aspheric, the fifth lens element having at least one inflection point.

Abstract: An exemplary embodiment of the present disclosure illustrates a transmission cable including a first port, a second port, a third port and a plurality of conduction wires. Through each respective one of the plurality of conduction wires, a power pin of the third port is connected to power pins of the first port and the second port, a ground pin of the third port is connected to a ground pin of the first port, and a specific pin of the third port is connected to a metal shielding case or the ground pin of the second port. The second port is floating when the specific pin of the third port is connected to the metal shielding case. Therefore, the stability of a transmission system established through the transmission cable can be guaranteed.

Abstract: A fabrication method of a trench power semiconductor structure is provided. First, a substrate with a first epitaxial layer is provided. Then, a dielectric layer is formed on the first epitaxial layer. A shielding layer is formed on the dielectric layer. Next, a portion of the shielding and the dielectric layers are removed to form a shielding structure and a dielectric structure on the first epitaxial layer, wherein the shielding structure is stacked on the dielectric structure. A selective epitaxial growth technique is utilized to form a second epitaxial layer surrounding the dielectric and the shielding structures on the exposed surface of the first epitaxial layer and the second epitaxial layer. Afterward, the shielding structure is removed to form a trench on the dielectric structure. A gate oxide layer is further formed on the inner surface of the trench. Lastly, a conducting structure is formed in the trench.

Abstract: This invention provides an image capturing lens assembly in order from an object side to an image side comprising five lens elements with refractive power: a first lens element with negative refractive power having a convex object-side surface and a concave image-side surface, a second lens element with positive refractive power having a convex image-side surface, a third lens element with positive refractive power having a convex object-side surface, a fourth lens element with negative refractive power having a convex object-side surface and a concave image-side surface; and a fifth lens element with positive refractive power. By such arrangement, sufficient field of view is provided, and the aberration of the lens assembly is corrected for obtaining higher image resolution.

Abstract: A closed cell trench MOSFET structure having a drain region of a first conductivity type, a body of a second conductivity type, a trenched gate, and a plurality of source regions of the first conductivity type is provided. The body is located on the drain region. The trenched gate is located in the body and has at least two stripe portions and a cross portion. A bottom of the stripe portions is located in the drain region and a bottom of the cross portion is in the body. The source regions are located in the body and at least adjacent to the stripe region of the trenched gate.

Abstract: A light source structure of a projector includes at least a solid state lighting element, at least an optical collimator lens, and at least a micro-lens. The solid state lighting element generates a plurality of radial beams, which are incident to the optical collimator lens. The optical collimator lens converts the radial beams into a plurality of parallel beams which successively strike the micro-lens. The parallel beams are concentrated and focused by the micro-lens into a projecting beam.

Abstract: A light source structure of a projector includes at least a solid state lighting element, at least an optical collimator lens, a condenser lens, and a light dispersing apparatus. The solid state lighting element generates a plurality of radial beams, which are incident, to the optical collimator lens. The optical collimator lens converts the radial beams into a plurality of parallel beams which strike the condenser lens. The parallel beams are concentrated and focused by the condenser lens into a projecting beam. The light dispersing apparatus is positioned on at a focal point of the condenser lens and receives the projecting beam to scatter the projecting beam uniformly.

Abstract: An electric pencil sharpener includes a cutter carrier, and first and second cutter members mounted on the cutter carrier and having long and short blade portions. The rear end of the short blade portion is disposed forwardly of the rear end of the long blade portion. A shaving space includes a rear region disposed between the rear ends of the long and short blade portions. The rear region allows extension of a tip portion of a pencil thereinto for pushing a switch actuation unit so as to deactivate a motor when the tip portion of the pencil has been sharpened to extend a predetermined length into the rear region.

Abstract: A fabrication method of a power semiconductor device is provided. Firstly, a plurality of trenched gate structures is formed in the base. Then, a body mask is used for forming a pattern layer on the base. The pattern layer has at least a first open and a second open for forming at least a body region and a heavily doped region in the base respectively. Then, a shielding structure is formed on the base to fill the second open and line at least a sidewall of the first open. Next, a plurality of source doped regions is formed in the body region by using the pattern layer and the shielding structure as the mask. Then, an interlayer dielectric layer is formed on the base and a plurality of source contact windows is formed therein to expose the source doped regions.